Patents by Inventor Hiroho Kitada
Hiroho Kitada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11955360Abstract: A Johnsen-Rahbek force type electrostatic chuck including: a metal substrate; an electrode for electrostatic attraction provided on the metal substrate with an insulating layer interposed between the metal substrate and the electrode for electrostatic attraction; and a dielectric layer constituting an electrostatic attraction surface in contact with a workpiece. The dielectric layer includes a ceramic spray coating and a sealing component with which pores of the ceramic spray coating are filled, and the sealing component contains a metal organic salt containing a rare earth element.Type: GrantFiled: December 24, 2020Date of Patent: April 9, 2024Assignees: TOCALO CO., Ltd., HITACHI HIGH-TECH CORPORATIONInventors: Takeshi Takabatake, Tomohiro Nakasuji, Akira Itoh, Kentaro Seto, Yutaka Omoto, Hiroho Kitada, Kazuumi Tanaka
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Publication number: 20230154780Abstract: A Johnsen-Rahbek force type electrostatic chuck including: a metal substrate; an electrode for electrostatic attraction provided on the metal substrate with an insulating layer interposed between the metal substrate and the electrode for electrostatic attraction; and a dielectric layer constituting an electrostatic attraction surface in contact with a workpiece. The dielectric layer includes a ceramic spray coating and a sealing component with which pores of the ceramic spray coating are filled, and the sealing component contains a metal organic salt containing a rare earth element.Type: ApplicationFiled: December 24, 2020Publication date: May 18, 2023Applicants: TOCALO Co., Ltd., HITACHI HIGH-TECH CORPORATIONInventors: Takeshi TAKABATAKE, Tomohiro NAKASUJI, Akira ITOH, Kentaro SETO, Yutaka OMOTO, Hiroho KITADA, Kazuumi TANAKA
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Patent number: 11482435Abstract: In a plasma processing apparatus, an additional viewing window is disposed between an infrared temperature sensor and a view window, and the additional viewing window is cooled to be retained at room temperature (20° C. to 25° C.), to reduce and to stabilize electromagnetic waves emitted from the viewing window. By correcting the value of the electromagnetic waves, the measurement precision of the temperature monitor is increased and it is possible to measure and to control the dielectric window temperature in a stable state.Type: GrantFiled: September 6, 2019Date of Patent: October 25, 2022Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Masatoshi Kawakami, Tsutomu Nakamura, Hideki Kihara, Hiroho Kitada, Hidenobu Tanimura, Hironori Kusumoto
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Publication number: 20190393058Abstract: In a plasma processing apparatus, an additional viewing window is disposed between an infrared temperature sensor and a view window, and the additional viewing window is cooled to be retained at room temperature (20° C. to 25° C.), to reduce and to stabilize electromagnetic waves emitted from the viewing window. By correcting the value of the electromagnetic waves, the measurement precision of the temperature monitor is increased and it is possible to measure and to control the dielectric window temperature in a stable state.Type: ApplicationFiled: September 6, 2019Publication date: December 26, 2019Inventors: Masatoshi KAWAKAMI, Tsutomu NAKAMURA, Hideki KIHARA, Hiroho KITADA, Hidenobu TANIMURA, Hironori KUSUMOTO
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Publication number: 20160027618Abstract: A plasma processing apparatus includes a sample stage in a processing chamber in a vacuum container having a placement surface on which a wafer to be processed by using the plasma is placed, a discharge pump connected to a discharge port disposed below the sample stage, and an adjuster that adjusts the amount of discharged gas, in which a first process step of supplying a first processing gas from above the placement surface into the processing chamber and supplying a second processing gas from below the placement surface into the processing chamber to process the wafer by using the first processing gas and a second process step where the first processing gas and the second processing gas are reversed are repeatedly switched over therebetween, and the adjuster adjusts a pressure in the processing chamber to a predetermined value during the processing.Type: ApplicationFiled: February 20, 2015Publication date: January 28, 2016Inventors: Masatoshi Kawakami, Hiroho Kitada, Hideki Kihara, Hironori Kusumoto, Masahiro Sumiya, Motohiro Tanaka, Yutaka Kozuma
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Publication number: 20150214083Abstract: In a plasma processing apparatus, an additional viewing window is disposed between an infrared temperature sensor and a view window, and the additional viewing window is cooled to be retained at room temperature (20° C. to 25° C.), to reduce and to stabilize electromagnetic waves emitted from the viewing window. By correcting the value of the electromagnetic waves, the measurement precision of the temperature monitor is increased and it is possible to measure and to control the dielectric window temperature in a stable state.Type: ApplicationFiled: August 20, 2014Publication date: July 30, 2015Inventors: Masatoshi Kawakami, Tsutomu Nakamura, Hideki Kihara, Hiroho Kitada, Hidenobu Tanimura, Hironori Kusumoto
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Patent number: 8897906Abstract: A vacuum processing apparatus includes a robot connected to a vacuum container to carry a wafer on one of its two arms to or from a processing chamber; a unit to detect an amount of deviation of the wafer from a predetermined wafer mounting position on the arm that may occur when the robot carries the wafer into or out of the processing chamber; and an adjusting device to adjust the operation of the robot based on the detected amount of deviation. The adjusting device adjusts the robot operation based on the result of a teaching operation performed in advance. After being subjected to the initial teaching operation, the robot again undergoes a second teaching operation according to the information on the amount of wafer position deviation that is detected by moving the wafer in a predetermined transfer pattern, before the wafer processing is performed.Type: GrantFiled: September 20, 2011Date of Patent: November 25, 2014Assignee: Hitachi High-Technologies CorporationInventors: Tomohiro Ohashi, Akitaka Makino, Hiroho Kitada, Hideki Kihara
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Patent number: 8828257Abstract: In a plasma processing apparatus including a processing chamber in a vacuum container to form plasma in the processing chamber in which pressure is reduced, a sample stage in lower part of inside of the processing chamber and having an upper surface on which a wafer to be processed by plasma is put, a plurality of pins in the sample stage to be moved in vertical direction so that the pins abut against rear side of the wafer to move the wafer up and down over the upper surface of the sample stage, and a plurality of openings formed in the upper surface of the sample stage so that the pins are moved in the openings, gas is fed from supply ports communicating with the openings into the processing chamber through the openings when the wafer is not put on the upper surface of the sample stage.Type: GrantFiled: February 26, 2009Date of Patent: September 9, 2014Assignee: Hitachi High-Technologies CorporationInventors: Hiroho Kitada, Kazunori Nakamoto, Yosuke Sakai
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Patent number: 8569177Abstract: A plasma processing apparatus is provided which includes an inert gas supply route connected to a process gas supply piping which supplies a process gas into a processing chamber in a vacuum vessel, a valve which opens or closes the inert gas supply route, and an adjuster which adjusts a flow rate of the inert gas. When processing of a sample is complete, an inert gas is supplied into the process gas supply piping so that a pressure in the process gas supply piping is maintained at a pressure higher than a pressure at which a compound of the process gas and a material of an inner wall of the process gas supply piping vaporizes.Type: GrantFiled: August 9, 2012Date of Patent: October 29, 2013Assignee: Hitachi High-Technologies CorporationInventors: Tomohiro Ohashi, Akitaka Makino, Hiroho Kitada, Muneo Furuse, Tomoyuki Tamura
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Publication number: 20130189800Abstract: A plasma processing apparatus is provided which includes an inert gas supply route connected to a process gas supply piping which supplies a process gas into a processing chamber in a vacuum vessel, a valve which opens or closes the inert gas supply route, and an adjuster which adjusts a flow rate of the inert gas. When processing of a sample is complete, an inert gas is supplied into the process gas supply piping so that a pressure in the process gas supply piping is maintained at a pressure higher than a pressure at which a compound of the process gas and a material of an inner wall of the process gas supply piping vaporizes.Type: ApplicationFiled: August 9, 2012Publication date: July 25, 2013Inventors: Tomohiro OHASHI, Akitaka Makino, Hiroho Kitada, Muneo Furuse, Tomoyuki Tamura
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Publication number: 20130053997Abstract: A vacuum processing apparatus includes a robot connected to a vacuum container to carry a wafer on one of its two arms to or from a processing chamber; a unit to detect an amount of deviation of the wafer from a predetermined wafer mounting position on the arm that may occur when the robot carries the wafer into or out of the processing chamber; and an adjusting device to adjust the operation of the robot based on the detected amount of deviation. The adjusting device adjusts the robot operation based on the result of a teaching operation performed in advance. After being subjected to the initial teaching operation, the robot again undergoes a second teaching operation according to the information on the amount of wafer position deviation that is detected by moving the wafer in a predetermined transfer pattern, before the wafer processing is performed.Type: ApplicationFiled: September 20, 2011Publication date: February 28, 2013Inventors: Tomohiro Ohashi, Akitaka Makino, Hiroho Kitada, Hideki Kihara
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Publication number: 20100163403Abstract: In a plasma processing apparatus including a processing chamber in a vacuum container to form plasma in the processing chamber in which pressure is reduced, a sample stage in lower part of inside of the processing chamber and having an upper surface on which a wafer to be processed by plasma is put, a plurality of pins in the sample stage to be moved in vertical direction so that the pins abut against rear side of the wafer to move the wafer up and down over the upper surface of the sample stage, and a plurality of openings formed in the upper surface of the sample stage so that the pins are moved in the openings, gas is fed from supply ports communicating with the openings into the processing chamber through the openings when the wafer is not put on the upper surface of the sample stage.Type: ApplicationFiled: February 26, 2009Publication date: July 1, 2010Inventors: Hiroho Kitada, Kazunori Nakamoto, Yosuke Sakai
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Publication number: 20090321017Abstract: There is disclosed a plasma processing apparatus wherein a sample placed on the top surface of the sample table located within the processing chamber contained in a vacuum vessel is processed with plasma formed in the processing chamber, comprising a set of ducts cut within the sample table through which cooling medium flows; a film-shaped heater whose heating elements are concentrically embedded in the dielectric film serving as the top surface of the sample table; plural temperature controllers which set up the temperature of the cooling medium flowing through the ducts at different values, respectively; and a control unit which switches over the circulations through the ducts of the cooling medium supplied from the plural temperature controllers.Type: ApplicationFiled: September 8, 2008Publication date: December 31, 2009Inventors: Tsunehiko Tsubone, Hiroho Kitada, Yosuke Sakai, Ken Yoshioka, Yutaka Omoto, Mamoru Yakushiji, Yutaka Kouzuma
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Publication number: 20090178764Abstract: A plasma processing apparatus is provided that includes a heater-built-in electrostatic chuck, prevents a direct-current potential difference from being made in the plane of a wafer during plasma processing, and performs plasma processing while controlling the temperature of the wafer with good responsiveness without damaging a semiconductor device. The heater-built-in electrostatic chuck of the plasma processing apparatus has a structure in which an insulator, two heaters, an insulator, two electrostatic chuck electrodes having approximately identical areas, and a dielectric film are laminated in ascending order on a conductive base material to which a bias voltage is to be applied. The heaters have approximately identical areas, and are disposed below the two electrostatic chuck electrodes, respectively. Power is provided to the heaters via a low-path filter and a coaxial cable.Type: ApplicationFiled: February 29, 2008Publication date: July 16, 2009Inventors: Seiichiro Kanno, Tsunehiko Tsubone, Hiroho Kitada
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Publication number: 20080314321Abstract: The object of the present invention is to provide a plasma processing apparatus capable of processing a substrate stably for a long period of time. The plasma processing apparatus has a substrate holder disposed in a processing chamber and an electrode cover for protecting a support stage of said substrate holder, for processing a wafer placed on said support stage using a plasma generated in the processing chamber, wherein at least a surface of said electrode cover that is positioned directly below an edge of the wafer, or at least a surface of said electrode cover that comes into contact with plasma, is coated with a material having resistance to plasma and comprising Y2O3, Yb2O3 or YF3, or a mixture thereof, as its main component.Type: ApplicationFiled: September 3, 2008Publication date: December 25, 2008Inventors: Muneo FURUSE, Masanori Kadotani, Masatsugu Arai, Hiroho Kitada
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Publication number: 20080023139Abstract: The invention relates to a plasma processing apparatus and a plasma processing method and particularly relates to a plasma processing apparatus suitable for executing an etching processing of a work by using plasma.Type: ApplicationFiled: August 30, 2006Publication date: January 31, 2008Inventors: Naoki Yasui, Hiroho Kitada
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Publication number: 20070267145Abstract: A plasma processing apparatus includes: two disk-shaped members that are disposed inside the sample table and vertically connected; coolant grooves that are respectively disposed in the outer circumference side and the central side of the upper disk-shaped member and inside which coolants flow; a ring-shaped groove for suppressing heat transfer between these coolant grooves that is disposed between these coolant grooves; a fastening unit that fastens the upper disk-shaped member and the lower disk-shaped member respectively in plural positions of the outer circumference side of the coolant groove of the outer circumference side, and in plural positions of the inner circumference side of the ring-shaped groove; and pusher pins for carrying in/out a sample to the sample mounting surface, wherein the fastening unit of the inner circumference side of the ring-shaped groove and the pusher pins are disposed on a circle circumference within a range of 47 to 68% of the radius of the sample.Type: ApplicationFiled: August 31, 2006Publication date: November 22, 2007Inventors: Hiroho Kitada, Kazunori Nakamoto, Masakazu Isozaki
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Publication number: 20070044916Abstract: A ceramic film is formed by a spray method on a base material of an electrostatic attraction device. Electrode films for electrostatic attraction are formed by a spray method on a surface of the ceramic film. A ringular heater film is formed in a spray method between the electrode films in a radial direction of the electrode films. In addition, a ceramic film is formed by a spray method on upper surfaces of the electrode films and the heater film.Type: ApplicationFiled: August 31, 2005Publication date: March 1, 2007Inventors: Masakazu Isozaki, Seiichiro Kanno, Hideki Kihara, Hiroho Kitada
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Publication number: 20060291132Abstract: An electrostatic chuck which is built in a heater and can change, at a high speed, the temperature distribution of a wafer being processed by a plasma is provided at low cost. Also, there is provided a processing method which realizes uniform etching by suppressing CD variations in the plane of the wafer even when etching conditions change. The electrostatic chuck includes a base material in which multiple coolant grooves are formed, a high resistance layer which is formed on the base material, multiple heaters which are formed by thermally spraying conductors within the high resistance layer, multiple electrostatic chuck electrodes which are formed similarly by thermally spraying conductors within the high resistance layer, and temperature measuring means, and adjusts outputs of the heaters on the basis of temperature information of the temperature measuring means.Type: ApplicationFiled: March 8, 2006Publication date: December 28, 2006Inventors: Seiichiro Kanno, Tsunehiko Tsubone, Masakazu Isozaki, Toshio Masuda, Go Miya, Hiroho Kitada, Tooru Aramaki
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Publication number: 20060157198Abstract: Provided is a plasma processing apparatus, which comprises, as a member facing plasma in a plasma processing chamber, a member composed of a material prepared by incorporating a conductive material in quartz or germanium which is an amorphous base material.Type: ApplicationFiled: February 25, 2005Publication date: July 20, 2006Inventors: Muneo Furuse, Masanori Kadotani, Hiroho Kitada, Shingo Kimura