Abstract: A resin multilayer substrate includes insulating base materials integrated by thermocompression bonding and each including a thermoplastic resin as a main material. The insulating base materials include a first insulating base material with a first conductor pattern thereon, and a second insulating base material with a second conductor pattern thereon. The second insulating base material, an intermediate resin material layer, and the first insulating base material are stacked in this order. The intermediate resin material layer includes an intermediate region and an end region in contact with the surface on a first side of the second conductor pattern. The surface on the first side of the intermediate resin material layer is in contact with the first insulating base material, and, when seen in plan view, the first conductor pattern extends over the intermediate region and the end region.

Abstract: A resin multilayer substrate includes insulating base materials integrated by thermocompression bonding and each including a thermoplastic resin as a main material. The insulating base materials include a first insulating base material with a first conductor pattern thereon, and a second insulating base material with a second conductor pattern thereon. The second insulating base material, an intermediate resin material layer, and the first insulating base material are stacked in this order. The intermediate resin material layer includes an intermediate region and an end region in contact with the surface on a first side of the second conductor pattern. The surface on the first side of the intermediate resin material layer is in contact with the first insulating base material, and, when seen in plan view, the first conductor pattern extends over the intermediate region and the end region.

Abstract: A semiconductor device comprises an element separating insulation film formed on a main surface of a silicon substrate, an insulation film formed to project from the edge portion of the element separating insulation film onto a part of a silicon region of the substrate and having a thickness smaller than the thickness of the element separating insulation film, a first metal silicide film formed to cover the element separating insulation film and the thin insulation film in the vicinity of the edge portion of the element separating insulation film, a second metal silicide film formed on the silicon region in the vicinity of the thin insulation film, and a third metal silicide film formed in the vicinity of the tip portion of the thin insulation film for connecting the first and and second metal silicide films.