Patents by Inventor Hiroji Hanawa
Hiroji Hanawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11276562Abstract: A system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber includes a single radio-frequency (RF) power source that is coupled to multiple points on the discharge electrode of the plasma processing chamber. Positioning of the multiple coupling points, a power distribution between the multiple coupling points, or a combination of both are selected to at least partially compensate for a consistent non-uniformity pattern of thin films produced by the chamber. The power distribution between the multiple coupling points may be produced by an appropriate RF phase difference between the RF power applied at each of the multiple coupling points.Type: GrantFiled: March 2, 2020Date of Patent: March 15, 2022Assignee: Applied Materials, Inc.Inventors: Zheng John Ye, Ganesh Balasubramanian, Thuy Britcher, Jay D. Pinson, II, Hiroji Hanawa, Juan Carlos Rocha-Alvarez, Kwangduk Douglas Lee, Martin Jay Seamons, Bok Hoen Kim, Sungwon Ha
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Publication number: 20200203132Abstract: A system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber includes a single radio-frequency (RF) power source that is coupled to multiple points on the discharge electrode of the plasma processing chamber. Positioning of the multiple coupling points, a power distribution between the multiple coupling points, or a combination of both are selected to at least partially compensate for a consistent non-uniformity pattern of thin films produced by the chamber. The power distribution between the multiple coupling points may be produced by an appropriate RF phase difference between the RF power applied at each of the multiple coupling points.Type: ApplicationFiled: March 2, 2020Publication date: June 25, 2020Inventors: Zheng John YE, Ganesh BALASUBRAMANIAN, Thuy BRITCHER, Jay D. PINSON, II, Hiroji HANAWA, Juan Carlos ROCHA-ALVAREZ, Kwangduk Douglas LEE, Martin Jay SEAMONS, Bok Hoen KIM, Sungwon HA
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Patent number: 10580623Abstract: A system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber includes a single radio-frequency (RF) power source that is coupled to multiple points on the discharge electrode of the plasma processing chamber. Positioning of the multiple coupling points, a power distribution between the multiple coupling points, or a combination of both are selected to at least partially compensate for a consistent non-uniformity pattern of thin films produced by the chamber. The power distribution between the multiple coupling points may be produced by an appropriate RF phase difference between the RF power applied at each of the multiple coupling points.Type: GrantFiled: November 12, 2014Date of Patent: March 3, 2020Assignee: Applied Materials, Inc.Inventors: Zheng John Ye, Ganesh Balasubramanian, Thuy Britcher, Jay D. Pinson, II, Hiroji Hanawa, Juan Carlos Rocha-Alvarez, Kwangduk Douglas Lee, Martin Jay Seamons, Bok Hoen Kim, Sungwon Ha
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Patent number: 10460915Abstract: A substrate support assembly includes a shaft assembly, a pedestal coupled to a portion of the shaft assembly, and a first rotary connector coupled to the shaft assembly, wherein the first rotary connector comprises a first coil member surrounding a rotatable shaft member that is electrically coupled to the shaft assembly, the first coil member being rotatable with the rotatable shaft, and a second coil member surrounding the first coil member, the second coil member being stationary relative to the first coil member, wherein the first coil member electrically couples with the second coil member when the rotating radio frequency applicator is energized and provides a radio frequency signal/power to the pedestal through the shaft assembly.Type: GrantFiled: April 28, 2017Date of Patent: October 29, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Satoru Kobayashi, Kirby Hane Floyd, Hiroji Hanawa, Soonam Park, Dmitry Lubomirsky
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Patent number: 10403535Abstract: Embodiments of the present disclosure provide an electrostatic chuck for maintaining a flatness of a substrate being processed in a plasma reactor at high temperatures. In one embodiment, the electrostatic chuck comprises a chuck body coupled to a support stem, the chuck body having a substrate supporting surface, and the chuck body has a volume resistivity value of about 1×107 ohm-cm to about 1×1015 ohm-cm in a temperature of about 250° C. to about 700° C., and an electrode embedded in the body, the electrode is coupled to a power supply. In one example, the chuck body is composed of an aluminum nitride material which has been observed to be able to optimize chucking performance around 600° C. or above during a deposition or etch process, or any other process that employ both high operating temperature and substrate clamping features.Type: GrantFiled: August 12, 2015Date of Patent: September 3, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Zheng John Ye, Jay D. Pinson, II, Hiroji Hanawa, Jianhua Zhou, Xing Lin, Ren-Guan Duan, Kwangduk Douglas Lee, Bok Hoen Kim, Swayambhu P. Behera, Sungwon Ha, Ganesh Balasubramanian, Juan Carlos Rocha-Alvarez, Prashant Kumar Kulshreshtha, Jason K. Foster, Mukund Srinivasan, Uwe P. Haller, Hari K. Ponnekanti
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Publication number: 20170236693Abstract: A substrate support assembly includes a shaft assembly, a pedestal coupled to a portion of the shaft assembly, and a first rotary connector coupled to the shaft assembly, wherein the first rotary connector comprises a first coil member surrounding a rotatable shaft member that is electrically coupled to the shaft assembly, the first coil member being rotatable with the rotatable shaft, and a second coil member surrounding the first coil member, the second coil member being stationary relative to the first coil member, wherein the first coil member electrically couples with the second coil member when the rotating radio frequency applicator is energized and provides a radio frequency signal/power to the pedestal through the shaft assembly.Type: ApplicationFiled: April 28, 2017Publication date: August 17, 2017Inventors: Satoru KOBAYASHI, Kirby HANE FLOYD, Hiroji HANAWA, Soonam PARK, Dmitry LUBOMIRSKY
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Publication number: 20170162417Abstract: Techniques are disclosed for methods and apparatuses of an electrostatic chuck suitable for operating at high operating temperatures. In one example, a substrate support assembly is provided. The substrate support assembly includes a substantially disk-shaped ceramic body having an upper surface, a cylindrical sidewall, and a lower surface. The upper surface is configured to support a substrate thereon for processing the substrate in a vacuum processing chamber. The cylindrical sidewall defines an outer diameter of the ceramic body. The lower surface is disposed opposite the upper surface. An electrode is disposed in the ceramic body. A circuit is electrically connected to the electrode. The circuit includes a DC chucking circuit, a first RF drive circuit, and a second RF dive circuit. The DC chucking circuit, the first RF drive circuit and the second RF drive circuit are electrically coupled with the electrode.Type: ApplicationFiled: December 6, 2016Publication date: June 8, 2017Inventors: Zheng John YE, Hiroji HANAWA, Juan Carlos ROCHA-ALVAREZ, Pramit MANNA, Michael Wenyoung TSIANG, Allen KO, Wenjiao WANG, Yongjing LIN, Prashant Kumar KULSHRESHTHA, Xinhai HAN, Bok Hoen KIM, Kwangduk Douglas LEE, Karthik Thimmavajjula NARASIMHA, Ziqing DUAN, Deenesh PADHI
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Patent number: 9305749Abstract: A plasma source includes a plasma vessel that includes a dielectric material that encloses a cavity of a toroidal shape. The toroidal shape defines a toroidal axis therethrough. The vessel forms input and output connections, each of the input and output connections being in fluid communication with the cavity. One or more metal plates are disposed adjacent to the plasma vessel for cooling the plasma vessel. A magnetic core is disposed along the toroidal axis such that respective first and second ends of the magnetic core extend beyond axially opposed sides of the plasma vessel. First and second induction coils are wound about the respective first and second ends of the magnetic core. A plasma is generated in the cavity when an input gas is supplied through the input connection and an oscillating electrical current is supplied to the first and second induction coils.Type: GrantFiled: January 20, 2015Date of Patent: April 5, 2016Assignee: Applied Materials, Inc.Inventors: Zheng John Ye, Jay D. Pinson, II, Hiroji Hanawa, Juan Carlos Rocha-Alvarez
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Publication number: 20160049323Abstract: Embodiments of the present disclosure provide an electrostatic chuck for maintaining a flatness of a substrate being processed in a plasma reactor at high temperatures. In one embodiment, the electrostatic chuck comprises a chuck body coupled to a support stem, the chuck body having a substrate supporting surface, and the chuck body has a volume resistivity value of about 1×107 ohm-cm to about 1×1015 ohm-cm in a temperature of about 250° C. to about 700° C., and an electrode embedded in the body, the electrode is coupled to a power supply. In one example, the chuck body is composed of an aluminum nitride material which has been observed to be able to optimize chucking performance around 600° C. or above during a deposition or etch process, or any other process that employ both high operating temperature and substrate clamping features.Type: ApplicationFiled: August 12, 2015Publication date: February 18, 2016Inventors: Zheng John YE, Jay D. PINSON, II, Hiroji HANAWA, Jianhua ZHOU, Xing LIN, Ren-Guan DUAN, Kwangduk Douglas LEE, Bok Hoen KIM, Swayambhu P. BEHERA, Sungwon HA, Ganesh BALASUBRAMANIAN, Juan Carlos ROCHA- ALVAREZ, Prashant Kumar KULSHRESHTHA, Jason K. FOSTER, Mukund SRINIVASAN, Uwe P. HALLER, Hari K. PONNEKANTI
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Publication number: 20150228456Abstract: A plasma source includes a plasma vessel that includes a dielectric material that encloses a cavity of a toroidal shape. The toroidal shape defines a toroidal axis therethrough. The vessel forms input and output connections, each of the input and output connections being in fluid communication with the cavity. One or more metal plates are disposed adjacent to the plasma vessel for cooling the plasma vessel. A magnetic core is disposed along the toroidal axis such that respective first and second ends of the magnetic core extend beyond axially opposed sides of the plasma vessel. First and second induction coils are wound about the respective first and second ends of the magnetic core. A plasma is generated in the cavity when an input gas is supplied through the input connection and an oscillating electrical current is supplied to the first and second induction coils.Type: ApplicationFiled: January 20, 2015Publication date: August 13, 2015Applicant: Applied Materials, Inc.Inventors: ZHENG JOHN YE, Jay D. Pinson, II, Hiroji Hanawa, Juan Carlos Rocha-Alvarez
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Publication number: 20150136325Abstract: A system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber includes a single radio-frequency (RF) power source that is coupled to multiple points on the discharge electrode of the plasma processing chamber. Positioning of the multiple coupling points, a power distribution between the multiple coupling points, or a combination of both are selected to at least partially compensate for a consistent non-uniformity pattern of thin films produced by the chamber. The power distribution between the multiple coupling points may be produced by an appropriate RF phase difference between the RF power applied at each of the multiple coupling points.Type: ApplicationFiled: November 12, 2014Publication date: May 21, 2015Inventors: Zheng John YE, Ganesh BALASUBRAMANIAN, Thuy BRICHER, Jay D. PINSON, II, Hiroji HANAWA, Juan Carlos ROCHA-ALVAREZ, Kwangduk Douglas LEE, Martin Jay SEAMONS, Bok Hoen KIM, Sungwon HA
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Publication number: 20150083042Abstract: A substrate support assembly includes a shaft assembly, a pedestal coupled to a portion of the shaft assembly, and a first rotary connector coupled to the shaft assembly, wherein the first rotary connector comprises a first coil member surrounding a rotatable shaft member that is electrically coupled to the shaft assembly, the first coil member being rotatable with the rotatable shaft, and a second coil member surrounding the first coil member, the second coil member being stationary relative to the first coil member, wherein the first coil member electrically couples with the second coil member when the rotating radio frequency applicator is energized and provides a radio frequency signal/power to the pedestal through the shaft assembly.Type: ApplicationFiled: November 26, 2013Publication date: March 26, 2015Inventors: Satoru KOBAYASHI, Kirby Hane FLOYD, Hiroji HANAWA, Soonam PARK, Dmitry LUBOMIRSKY
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Patent number: 8980379Abstract: During a deposition process, material may deposit not only on the substrate, but also on other chamber components. In a MOCVD chamber, one of those components is the gas distribution showerhead. The showerhead may be cleaned by bombarding the showerhead with radicals generated by a plasma that includes an inert gas and chlorine. In order to generate the plasma, the showerhead may be negatively biased or floating relative to the substrate support. The showerhead may comprise stainless steel and be coated with a ceramic coating.Type: GrantFiled: August 27, 2010Date of Patent: March 17, 2015Assignee: Applied Materials, Inc.Inventors: Hiroji Hanawa, Kyawwin Maung, Hua Chung
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Patent number: 8970226Abstract: An RF current probe is encapsulated in a conductive housing to permit its placement inside a plasma reactor chamber. An RF voltage probe is adapted to have a long coaxial cable to permit a measuring device to be connected remotely from the probe without distorting the voltage measurement.Type: GrantFiled: July 17, 2013Date of Patent: March 3, 2015Assignee: Applied Materials, Inc.Inventors: Hiroji Hanawa, Satoru Kobayashi, Kartik Ramaswamy, Shahid Rauf
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Patent number: 8910644Abstract: Embodiments of the invention generally relate to apparatus and methods for cleaning chamber components using a cleaning plate. The cleaning plate is adapted to be positioned on a substrate support during a cleaning process, and includes a plurality of turbulence-inducing structures. The turbulence-inducing structures induce a turbulent flow of cleaning gas while the cleaning plate is rotated during a cleaning process. The cleaning plate increases the retention time of the cleaning gas near the showerhead during cleaning. Additionally, the cleaning plate reduces concentration gradients within the cleaning plate to provide a more effective clean. The method includes positioning a cleaning plate adjacent to a showerhead, and introducing cleaning gas to the space between the showerhead and the cleaning plate. A material deposited on the surface of the showerhead is then heated and vaporized in the presence of the cleaning gas, and then exhausted from the processing chamber.Type: GrantFiled: March 4, 2011Date of Patent: December 16, 2014Assignee: Applied Materials, Inc.Inventors: Hua Chung, Xizi Dong, Kyawwin Jason Maung, Hiroji Hanawa, Sang Won Kang, David H. Quach, Donald J. K. Olgado, David Bour, Wei-Yung Hsu, Alexander Tam, Anzhong Chang, Sumedh Acharya
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Patent number: 8900405Abstract: The disclosure concerns a process ring for the wafer support pedestal of a toroidal source plasma immersion ion implantation reactor. The process ring improves edge uniformity by providing a continuous surface extending beyond the wafer edge, in one embodiment. In another embodiment, the process ring includes a floating electrode that functions as an extension of the wafer support electrode by RF coupling at the bias frequency.Type: GrantFiled: November 14, 2007Date of Patent: December 2, 2014Assignee: Applied Materials, Inc.Inventors: Peter I. Porshnev, Majeed A. Foad, Kartik Ramaswamy, Biagio Gallo, Hiroji Hanawa, Andrew Nguyen, Kenneth S. Collins, Amir Al-Bayati
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Patent number: 8709924Abstract: Embodiments of the invention provide a novel apparatus and methods for forming a conformal doped layer on the surface of a substrate. A substrate is provided to a process chamber, and a layer of dopant source material is deposited by plasma deposition, atomic layer deposition, or plasma-assisted atomic layer deposition. The substrate is then subjected to thermal processing to activate and diffuse dopants into the substrate surface.Type: GrantFiled: March 1, 2011Date of Patent: April 29, 2014Assignee: Applied Materials, Inc.Inventors: Hiroji Hanawa, Seon-Mee Cho, Majeed A. Foad
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Publication number: 20130320998Abstract: An RF current probe is encapsulated in a conductive housing to permit its placement inside a plasma reactor chamber. An RF voltage probe is adapted to have a long coaxial cable to permit a measuring device to be connected remotely from the probe without distorting the voltage measurement.Type: ApplicationFiled: July 17, 2013Publication date: December 5, 2013Applicant: APPLIED MATERIALS, INC.Inventors: HIROJI HANAWA, SATORU KOBAYASHI, KARTIK RAMASWAMY, SHAHID RAUF
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Patent number: 8578879Abstract: Embodiments of impedance matching networks are provided herein. In some embodiments, an impedance matching network may include a coaxial resonator having an inner and an outer conductor. A tuning capacitor may be provided for variably controlling a resonance frequency of the coaxial resonator. The tuning capacitor may be formed by a first tuning electrode and a second tuning electrode and an intervening dielectric, wherein the first tuning electrode is formed by a portion of the inner conductor. A load capacitor may be provided for variably coupling energy from the inner conductor to a load. The load capacitor may be formed by the inner conductor, an adjustable load electrode, and an intervening dielectric.Type: GrantFiled: July 29, 2009Date of Patent: November 12, 2013Assignee: Applied Materials, Inc.Inventors: Kartik Ramaswamy, Hiroji Hanawa, Kenneth S. Collins, Lawrence Wong, Samer Banna, Andrew Nguyen
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Patent number: 8513939Abstract: An RF voltage probe is adapted to have a long coaxial cable to permit a measuring device to be connected remotely from the probe without distorting the voltage measurement.Type: GrantFiled: March 21, 2011Date of Patent: August 20, 2013Assignee: Applied Materials, Inc.Inventors: Hiroji Hanawa, Satoru Kobayashi, Kartik Ramaswamy, Shahid Rauf