Abstract: A radiation thermometer includes a temperature sensor for detecting an intensity of infrared radiation of light, a measuring optical system for introducing light from an object to the temperature sensor, a calculator for calculating a temperature of the object based on a detected infrared radiation intensity, a viewfinder for allowing the operator to visually recognize the object, a viewfinder optical system for introducing light from the object to the viewfinder, a focus detector for detecting focus condition of the measuring and viewfinder optical systems, and a controller responsive to the focus detector for controlling the measuring and viewfinder optical systems so as to come into a desired focus condition.

Abstract: A pyrometer includes a light source capable of emitting light to at least two wavelengths to a target to be measured. A light measuring member measures the light source and provides output signals representative of those two wavelengths. A second light measuring member measures light reflected by the target and provides second signals corresponding to the two wavelengths. A third light measuring member measures the intensity of the light radiated by the target with respect to those two wavelengths to produce third signals. An emissivity is assumed for the target based on the predetermined wavelengths, and a temperature is calculated on the basis of the minimum value of the difference between the assumed radiation intensity calculated according to the assumed emissivity of the target and the measured radiation intensity in accordance with the third signals.

Abstract: A pyrometer according to the present invention calculates a temperature of a target to be measured by means of light emitting device for emitting reference light having three wavelengths to the target, and light measuring portions for measuring the intensity of the reference light, the intensity of light reflected by the target, the intensity of light transmitted through the target and the intensity of light radiated by the target, respectively with respect to each of the three wavelengths. The transmitted light measured value of the reference light transmitted through the target is used for temperature calculation in addition to the measured values of the reference light, the reflected light and the radiated light, and therefore even if the target is a semi-transparent object, the true temperature thereof can be calculated.

Abstract: A method for measuring the surface temperature of a wafer substrate and a heat-treating apparatus are both used in a semiconductor device-manufacturing process wherein a reference light including infrared rays is intermittently emitted toward a wafer substrate. Infrared rays of a plurality of different types whose wavelengths are shorter than 1 .mu.m and differ from each other are selectively detected from the reference light emitted toward the wafer substrate, the reference light reflected by the wafer substrate, and the light radiated from the wafer substrate itself. On the basis of the detection performed with respect to the emitted reference light, the reflected reference light and the radiated infrared rays, the surface temperature of the wafer substrate is calculated. A substrate-heating element is controlled on the basis of the calculated temperature.