Abstract: A semiconductor device manufacturing method that includes: forming a gate insulating film containing a hafnium oxide and a zirconium oxide on a workpiece having a source, a drain and a channel; and subjecting the gate insulating film to a crystallization heat treatment at a temperature of 600 degrees C. or less is provided. The gate insulating film subjected to the crystallization heat treatment has a relative permittivity of 27 or more.

Abstract: A semiconductor device manufacturing method includes forming a dielectric film on a semiconductor substrate; forming a resist pattern on the dielectric film; irradiating an ionized gas cluster to a region of the dielectric film where the resist pattern is not formed; and removing a part of the region of the dielectric film in a thickness direction thereof where the ionized gas cluster is irradiated by a wet etching. The dielectric film serves as a gate insulating film, and two regions having different thicknesses of the dielectric film are formed.

Abstract: A semiconductor device manufacturing method that includes: forming a gate insulating film containing a hafnium oxide and a zirconium oxide on a workpiece having a source, a drain and a channel; and subjecting the gate insulating film to a crystallization heat treatment at a temperature of 600 degrees C. or less is provided. The gate insulating film subjected to the crystallization heat treatment has a relative permittivity of 27 or more.

Abstract: A semiconductor device manufacturing method includes forming a dielectric film on a semiconductor substrate; performing a heat treatment on the dielectric film; forming an electrode on a first region of the dielectric film; irradiating an ionized gas cluster to a second region of the dielectric film where the electrode is not formed; and removing the second region of the dielectric film where the ionized gas cluster is irradiated by a wet etching after the irradiating of the ionized gas cluster.

Abstract: A semiconductor device manufacturing method includes forming a first high-k insulating film on a processing target object; performing a crystallization heat-treatment process on the first high-k insulating film at a temperature equal to or higher than about 650° C. for a time less than about 60 seconds; and forming, on the first high-k insulating film, a second high-k insulating film containing a metal element having an ionic radius smaller than that of a metal element of the first high-k insulating film and having a relative permittivity higher than that of the first high-k insulating film.

Abstract: A disclosed fabrication method of a semiconductor device includes steps of depositing a dielectric film on a semiconductor substrate; thermally treating the dielectric film; and irradiating an ionized gas cluster onto the thermally treated dielectric film.

Abstract: A disclosed fabrication method of a semiconductor device includes steps of depositing a dielectric film on a semiconductor substrate; thermally treating the dielectric film; and irradiating an ionized gas cluster onto the thermally treated dielectric film.

Abstract: The semiconductor device has a stacked structure in which a tunnel oxide layer, a charge trapping layer, a blocking oxide layer, and a gate electrode are sequentially formed on a silicon substrate, wherein the blocking oxide layer includes a crystalline layer disposed adjacent to the charge trapping layer and an amorphous layer disposed adjacent to the gate electrode.

Abstract: The semiconductor device has a stacked structure in which a tunnel oxide layer, a charge trapping layer, a blocking oxide layer, and a gate electrode are sequentially formed on a silicon substrate, wherein the blocking oxide layer includes a crystalline layer disposed adjacent to the charge trapping layer and an amorphous layer disposed adjacent to the gate electrode.