Patents by Inventor Hirokazu Nishimaki

Hirokazu Nishimaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9395628
    Abstract: There is provided a resist underlayer film-forming composition to reduce the amount of sublimate generated from the resist underlayer film at baking process and to suppress aging and have high storage stability. A resist underlayer film-forming composition including an aryl sulfonic acid salt compound having a hydroxy group of Formula (1): (where Ar is a benzene ring or an aromatic hydrocarbon ring wherein benzene rings are condensed; m1 is an integer of 0 to (2+2n), m2 and m3 each is an integer of 1 to (3+2n), and (m1+m2+m3) is an integer of 2 to (4+2n), with the proviso that n is the number of the benzene rings or condensed benzene rings in the aromatic hydrocarbon ring and is an integer of 1 to 6; X+ is NH4+, a primary ammonium ion, secondary ammonium ion, tertiary ammonium ion, quaternary ammonium ion, sulfonium ion, or an iodonium cation).
    Type: Grant
    Filed: February 21, 2014
    Date of Patent: July 19, 2016
    Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Takafumi Endo, Keisuke Hashimoto, Hirokazu Nishimaki, Rikimaru Sakamoto
  • Publication number: 20160147151
    Abstract: An excellent resist underlayer film having a selectivity of dry etching rate close to that of a resist, selectivity of dry etching rate lower than that of a resist, or selectivity of dry etching rate lower than that of semiconductor substrate. Resist underlayer film-forming composition including a polymer containing unit structure of Formula (1): (where R3 is hydrogen atom, or C6-40 aryl group or heterocyclic group optionally substituted with halogen group, nitro group, amino group, carbonyl group, C6-40 aryl group, or hydroxy group; R4 is a hydrogen atom, or C1-10 alkyl group, C6-40 aryl group, or heterocyclic group optionally substituted with halogen group, nitro group, amino group, or hydroxy group; R3 and R4 optionally form ring together with carbon atoms bonded thereto; and n is an integer of 0 to 2).
    Type: Application
    Filed: June 23, 2014
    Publication date: May 26, 2016
    Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Tetsuya SHINJO, Yasunobu SOMEYA, Ryo KARASAWA, Hirokazu NISHIMAKI, Takafumi ENDO, Keisuke HASHIMOTO
  • Publication number: 20160068709
    Abstract: Resist underlayer film-forming composition for forming resist underlayer film with high dry etching resistance, wiggling resistance and exerts good flattening property and embedding property for uneven parts, including resin obtained by reacting organic compound A including aromatic ring and aldehyde B having at least two aromatic hydrocarbon ring groups having phenolic hydroxy group and having structure wherein the aromatic hydrocarbon ring groups are bonded through tertiary carbon atom. The aldehyde B may be compound of Formula (1): The obtained resin may have a unit structure of Formula (2): Ar1 and Ar2 each are C6-40 aryl group. The organic compound A including aromatic ring may be aromatic amine or phenolic hydroxy group-containing compound. The composition may contain further solvent, acid and/or acid generator, or crosslinking agent.
    Type: Application
    Filed: May 8, 2014
    Publication date: March 10, 2016
    Inventors: Takafumi ENDO, Keisuke HASHIMOTO, Hirokazu NISHIMAKI, Rikimaru SAKAMOTO
  • Patent number: 9263286
    Abstract: A novel diarylamine novolac resin such as a phenylnaphthylamine novolac resin, and further a resist underlayer film-forming composition in which the resin is used in a lithography process for manufacturing a semiconductor device. A polymer including a unit structure (A) of Formula (1): (in Formula (1), each of Ar1 and Ar2 is a benzene ring or a naphthalene ring). A method for manufacturing a semiconductor device, including: forming an underlayer film on a semiconductor substrate with the resist underlayer film-forming composition; forming a hardmask on the underlayer film; forming a resist film on the hardmask; forming a resist pattern by irradiation with light or an electron beam followed by development; etching the hardmask with the resist pattern; etching the underlayer film with the hardmask thus patterned; and processing the semiconductor substrate with the underlayer film thus patterned.
    Type: Grant
    Filed: September 25, 2012
    Date of Patent: February 16, 2016
    Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Rikimaru Sakamoto, Yasunobu Someya, Keisuke Hashimoto, Hirokazu Nishimaki
  • Patent number: 9261790
    Abstract: A resist underlayer film-forming composition for forming a resist underlayer film having both dry etching resistance and heat resistance. A resist underlayer film-forming composition comprising a polymer containing a unit structure of Formula (1): In Formula (1), R3 is a hydrogen atom, and both n1 and n2 are 0. A method for producing a semiconductor device comprising the steps of: forming an underlayer film on a semiconductor substrate using the resist underlayer film-forming composition; forming a hard mask on the underlayer film; further forming a resist film on the hard mask; forming a resist pattern by irradiation with light or electron beams and development; etching the hard mask using the resist pattern; etching the underlayer film using the hard mask patterned; and fabricating the semiconductor substrate using the patterned underlayer film.
    Type: Grant
    Filed: January 25, 2013
    Date of Patent: February 16, 2016
    Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Yasunobu Someya, Keisuke Hashimoto, Tetsuya Shinjo, Hirokazu Nishimaki, Ryo Karasawa, Rikimaru Sakamoto
  • Patent number: 9244353
    Abstract: A resist underlayer film forming composition including: a polymer having any one or more repeating structural units of Formulas (1a), (1b), and (1c): two R1s are each independently alkyl group, alkenyl group, aromatic hydrocarbon group, halogen atom, nitro group, or an amino group, two R2s are each independently hydrogen atom, alkyl group, alkenyl group, acetal group, acyl group, or glycidyl group, R3 is aromatic hydrocarbon group optionally having a substituent, R4 is hydrogen atom, phenyl group, or naphthyl group, in (1b), groups of two R3s and atoms or groups of two R4s are optionally different from each other, two “k”s are each independently 0 or 1, m is integer of 3 to 500, n, n1, and n2 are an integer of 2 to 500, p is integer of 3 to 500, X is a single bond or hetero atom, and two Qs are each independently a structural unit; and solvent.
    Type: Grant
    Filed: August 5, 2013
    Date of Patent: January 26, 2016
    Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Hirokazu Nishimaki, Keisuke Hashimoto, Tetsuya Shinjo, Takafumi Endo, Rikimaru Sakamoto
  • Publication number: 20150378260
    Abstract: There is provided a resist underlayer film-forming composition to reduce the amount of sublimate generated from the resist underlayer film at baking process and to suppress aging and have high storage stability. A resist underlayer film-forming composition including an aryl sulfonic acid salt compound having a hydroxy group of Formula (1): (where Ar is a benzene ring or an aromatic hydrocarbon ring wherein benzene rings are condensed; m1 is an integer of 0 to (2+2n), m2 and m3 each is an integer of 1 to (3+2n), and (m1+m2+m3) is an integer of 2 to (4+2n), with the proviso that n is the number of the benzene rings or condensed benzene rings in the aromatic hydrocarbon ring and is an integer of 1 to 6; X+ is NH4+, a primary ammonium ion, secondary ammonium ion, tertiary ammonium ion, quaternary ammonium ion, sulfonium ion, or an iodonium cation).
    Type: Application
    Filed: February 21, 2014
    Publication date: December 31, 2015
    Inventors: Takafumi ENDO, Keisuke HASHIMOTO, Hirokazu NISHIMAKI, Rikimaru SAKAMOTO
  • Patent number: 9140989
    Abstract: A material forms a pattern by applying a photosensitive composition to a base material and drying to form a photosensitive coating and performing exposure and development, and a method for forming the pattern. A photosensitive composition includes water-soluble organic particles, and a solvent, wherein the solvent is a poor solvent for the water-soluble organic particles. Preferably, the water-soluble organic particles of the photosensitive composition includes a polymer which contains a unit structure (A) for forming organic particles, a unit structure (B) for forming interparticle crosslinkage, and a unit structure (C) for imparting dispersibility, and the photosensitive composition further includes a photoacid generator.
    Type: Grant
    Filed: April 11, 2012
    Date of Patent: September 22, 2015
    Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Takahiro Kishioka, Makiko Umezaki, Shigeo Kimura, Hirokazu Nishimaki, Tomoya Ohashi, Yuki Usui
  • Publication number: 20150212418
    Abstract: A resist underlayer film forming composition including: a polymer having any one or more repeating structural units of Formulas (1a), (1b), and (1c): two R1s are each independently alkyl group, alkenyl group, aromatic hydrocarbon group, halogen atom, nitro group, or an amino group, two R2s are each independently hydrogen atom, alkyl group, alkenyl group, acetal group, acyl group, or glycidyl group, R3 is aromatic hydrocarbon group optionally having a substituent, R4 is hydrogen atom, phenyl group, or naphthyl group, in (1b), groups of two R3s and atoms or groups of two R4s are optionally different from each other, two “k”s are each independently 0 or 1, m is integer of 3 to 500, n, n1, and n2 are an integer of 2 to 500, p is integer of 3 to 500, X is a single bond or hetero atom, and two Qs are each independently a structural unit; and solvent.
    Type: Application
    Filed: August 5, 2013
    Publication date: July 30, 2015
    Inventors: Hirokazu Nishimaki, Keisuke Hashimoto, Tetsuya Shinjo, Takafumi Endo, Rikimaru Sakamoto
  • Publication number: 20150184018
    Abstract: There is provided a composition for forming a resist underlayer film which has high dry-etching resistance and wiggling resistance, and achieves excellent planarizing properties for a semiconductor substrate surface having level differences or irregular portions. A resist underlayer film-forming composition including a phenol novolac resin that is obtained by causing a compound that has at least three phenolic groups, in which each of the phenolic groups has a structure bonded to a tertiary carbon atom or has a structure bonded to a quaternary carbon atom to which a methyl group binds, to react with an aromatic aldehyde or an aromatic ketone in the presence of an acid catalyst.
    Type: Application
    Filed: August 13, 2013
    Publication date: July 2, 2015
    Inventors: Takafumi Endo, Tetsuya Shinjo, Keisuke Hashimoto, Yasunobu Someya, Hirokazu Nishimaki, Ryo Karasawa, Rikimaru Sakamoto
  • Patent number: 9023583
    Abstract: There is provided a composition for forming a monolayer or a multilayer on the substrate. A composition for forming a monolayer or a multilayer containing a silane compound of Formula (1A) or Formula (1B): [where R1s are independently a methyl group or an ethyl group; Xs are independently a C1-10 linking group; and Zs are independently a C1-10 alkyl group or a phenyl group optionally having a substituent, where X optionally contains at least one oxygen atom or sulfur atom in the main chain thereof, and when Z is an alkyl group, at least one hydrogen atom of the alkyl group is optionally substituted with a fluorine atom] and an organic solvent.
    Type: Grant
    Filed: October 7, 2011
    Date of Patent: May 5, 2015
    Assignee: Nissan Chemical Industries, Ltd.
    Inventors: Takahiro Kishioka, Daisuke Sakuma, Shigeo Kimura, Hirokazu Nishimaki, Tomoya Ohashi, Yuki Usui
  • Patent number: 8993215
    Abstract: A composition for forming a resist underlayer film having heat resistance, which is used for a lithography process of semiconductor device production. A resist underlayer film forming composition including a polymer having a unit structure of Formula (1): Preferably, both rings A and B are benzene rings, n1, n2, and n3 are 0, R4 and R6 are hydrogen atoms, or R5 is naphthyl. A method for producing a semiconductor device including: forming an underlayer film by use of the resist underlayer film forming composition onto a semiconductor substrate; forming a hard mask on the underlayer film; forming a resist film on the hard mask; forming a resist pattern by irradiation with light or an electron beam and development; etching the hard mask using the resist pattern; etching the underlayer film by use of the patterned hard mask; and processing the semiconductor substrate by use of the patterned underlayer film.
    Type: Grant
    Filed: March 25, 2013
    Date of Patent: March 31, 2015
    Assignee: Nissan Chemical Industries, Ltd.
    Inventors: Hirokazu Nishimaki, Rikimaru Sakamoto, Keisuke Hashimoto, Tetsuya Shinjo, Yasunobu Someya, Ryo Karasawa
  • Publication number: 20150044876
    Abstract: A composition for forming a resist underlayer film having heat resistance, which is used for a lithography process of semiconductor device production. A resist underlayer film forming composition including a polymer having a unit structure of Formula (1): Preferably, both rings A and B are benzene rings, n1, n2, and n3 are 0, R4 and R6 are hydrogen atoms, or R5 is naphthyl. A method for producing a semiconductor device including: forming an underlayer film by use of the resist underlayer film forming composition onto a semiconductor substrate; forming a hard mask on the underlayer film; forming a resist film on the hard mask; forming a resist pattern by irradiation with light or an electron beam and development; etching the hard mask using the resist pattern; etching the underlayer film by use of the patterned hard mask; and processing the semiconductor substrate by use of the patterned underlayer film.
    Type: Application
    Filed: March 25, 2013
    Publication date: February 12, 2015
    Inventors: Hirokazu Nishimaki, Rikimaru Sakamoto, Keisuke Hashimoto, Tetsuya Shinjo, Yasunobu Someya, Ryo Karasawa
  • Publication number: 20150011092
    Abstract: A resist underlayer film-forming composition for forming a resist underlayer film having both dry etching resistance and heat resistance. A resist underlayer film-forming composition comprising a polymer containing a unit structure of Formula (1): In Formula (1), R3 is a hydrogen atom, and both n1 and n2 are 0. A method for producing a semiconductor device comprising the steps of: forming an underlayer film on a semiconductor substrate using the resist underlayer film-forming composition; forming a hard mask on the underlayer film; further forming a resist film on the hard mask; forming a resist pattern by irradiation with light or electron beams and development; etching the hard mask using the resist pattern; etching the underlayer film using the hard mask patterned; and fabricating the semiconductor substrate using the patterned underlayer film.
    Type: Application
    Filed: January 25, 2013
    Publication date: January 8, 2015
    Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Yasunobu Someya, Keisuke Hashimoto, Tetsuya Shinjo, Hirokazu Nishimaki, Ryo Karasawa, Rikimaru Sakamoto
  • Patent number: 8822138
    Abstract: There is provided a resist underlayer film having both heat resistance and etching selectivity. A composition for forming a resist underlayer film for lithography, comprising a reaction product (C) of an alicyclic epoxy polymer (A) with a condensed-ring aromatic carboxylic acid and monocyclic aromatic carboxylic acid (B). The alicyclic epoxy polymer (A) may include a repeating structural unit of Formula (1): (T is a repeating unit structure containing an alicyclic ring in the polymer main chain; and E is an epoxy group or an organic group containing an epoxy group). The condensed-ring aromatic carboxylic acid and monocyclic aromatic carboxylic acid (B) may include a condensed-ring aromatic carboxylic acid (B1) and a monocyclic aromatic carboxylic acid (B2) in a molar ratio of B1:B2=3:7 to 7:3. The condensed-ring aromatic carboxylic acid (B1) may be 9-anthracenecarboxylic acid and the monocyclic aromatic carboxylic acid (B2) may be benzoic acid.
    Type: Grant
    Filed: August 11, 2010
    Date of Patent: September 2, 2014
    Assignee: Nissan Chemical Industries, Ltd.
    Inventors: Tetsuya Shinjo, Hirokazu Nishimaki, Yasushi Sakaida, Keisuke Hashimoto
  • Publication number: 20140235059
    Abstract: A novel diarylamine novolac resin such as a phenylnaphthylamine novolac resin, and further a resist underlayer film-forming composition in which the resin is used in a lithography process for manufacturing a semiconductor device. A polymer including a unit structure (A) of Formula (1): (in Formula (1), each of Ar1 and Ar2 is a benzene ring or a naphthalene ring). A method for manufacturing a semiconductor device, including: forming an underlayer film on a semiconductor substrate with the resist underlayer film-forming composition; forming a hardmask on the underlayer film; forming a resist film on the hardmask; forming a resist pattern by irradiation with light or an electron beam followed by development; etching the hardmask with the resist pattern; etching the underlayer film with the hardmask thus patterned; and processing the semiconductor substrate with the underlayer film thus patterned.
    Type: Application
    Filed: September 25, 2012
    Publication date: August 21, 2014
    Applicant: NISSAN CHEMICAL INDUSTRIES, LTD
    Inventors: Rikimaru Sakamoto, Yasunobu Someya, Keisuke Hashimoto, Hirokazu Nishimaki
  • Patent number: 8685615
    Abstract: A resist underlayer film forming composition used in a lithography process includes: a polymer (A) containing a unit structure having a hydroxy group, a unit structure having a carboxy group, or combination thereof; a crosslinkable compound (B) having at least two vinyl ether groups; a photoacid generator (C); a C4-20 fluoroalkylcarboxylic acid or a salt of the fluoroalkylcarboxylic acid (D); and a solvent (E).
    Type: Grant
    Filed: June 17, 2010
    Date of Patent: April 1, 2014
    Assignee: Nissan Chemical Industries, Ltd.
    Inventors: Shigeo Kimura, Hirokazu Nishimaki, Tomoya Ohashi, Yuki Usui, Takahiro Kishioka
  • Publication number: 20140045119
    Abstract: A material forms a pattern by applying a photosensitive composition to a base material and drying to form a photosensitive coating and performing exposure and development, and a method for forming the pattern. A photosensitive composition includes water-soluble organic particles, and a solvent, wherein the solvent is a poor solvent for the water-soluble organic particles. Preferably, the water-soluble organic particles of the photosensitive composition includes a polymer which contains a unit structure (A) for forming organic particles, a unit structure (B) for forming interparticle crosslinkage, and a unit structure (C) for imparting dispersibility, and the photosensitive composition further includes a photoacid generator.
    Type: Application
    Filed: April 11, 2012
    Publication date: February 13, 2014
    Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Takahiro Kishioka, Makiko Umezaki, Shigeo Kimura, Hirokazu Nishimaki, Tomoya Ohashi, Yuki Usui
  • Publication number: 20130216956
    Abstract: There is provided a composition for forming a monolayer or a multilayer on the substrate. A composition for forming a monolayer or a multilayer containing a silane compound of Formula (1A) or Formula (1B): [where R1s are independently a methyl group or an ethyl group; Xs are independently a C1-10 linking group; and Zs are independently a C1-10 alkyl group or a phenyl group optionally having a substituent, where X optionally contains at least one oxygen atom or sulfur atom in the main chain thereof, and when Z is an alkyl group, at least one hydrogen atom of the alkyl group is optionally substituted with a fluorine atom] and an organic solvent.
    Type: Application
    Filed: October 7, 2011
    Publication date: August 22, 2013
    Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Takahiro Kishioka, Daisuke Sakuma, Shigeo Kimura, Hirokazu Nishimaki, Tomoya Ohashi, Yuki Usui
  • Publication number: 20120288795
    Abstract: A composition for forming a photosensitive resist underlayer film and a method for forming a resist pattern. The composition for forming a photosensitive resist underlayer film includes a polymer having a structural unit of Formula (1), a compound having at least two vinyl ether groups, a photo-acid generator; and a solvent: where R1 is a hydrogen atom or a methyl group, R2 is a C1-4 alkyl group, and i is an integer of 0 to 4.
    Type: Application
    Filed: November 16, 2010
    Publication date: November 15, 2012
    Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Makiko Umezaki, Takahiro Kishioka, Yusuke Horiguchi, Hirokazu Nishimaki, Tomoya Ohashi, Yuki Usui