Abstract: A method of measuring physical properties includes: a preparation step of preparing a moisened member containing an organic material and having a known water absorption rate and a known mass; a heating and cooling step of performing cooling after heating the member; and a measurement step of measuring a mass of the member after cooling the member in the heating and cooling step, in which in the heating and cooling step, a deformation rate of the member is measured using a digital image correlation method.

Abstract: A structure is formed which is prepared as a via for electrical contact passing through layers of an optical waveguide, in a multilayer structure including an electrical substrate and the laminated layers of the optical waveguide. The surface of an electrode pad is plated with solder. The layers of the optical waveguide are formed above the portion plated with solder are removed to expose the portion plated with solder. A device is prepared having both a light-emitter or photoreceptor in optical contact with the optical waveguide, and a stud (pillar). The stud (pillar) is inserted into the portion in which layers of the optical waveguide have been removed, and the plated solder is melted to bond the electrode pad on top of the electrical substrate to the tip of the inserted stud (pillar).

Abstract: A method of forming a circuit board includes forming a conductive pattern on a substrate; forming a first negative resist on the substrate after formation of the conductive pattern; partially exposing the first negative resist on the surface of the conductive pattern to form a first via exposure portion; forming a second negative resist on the substrate after formation of the first via exposure portion; partially exposing the second negative resist on the first via exposure portion to form a second via exposure portion larger than the first via exposure portion; developing the first negative resist and the second negative resist after formation of the second via exposure portion to form a via opening reaching the conductive pattern; and filling the via opening with a conductive material.

Abstract: A method of forming a structure for an interfacial alloy layer which is able to improve the electromigration (EM) resistance of a solder joint. More specifically, in this structure, a controlled interfacial alloy layer is provided on both sides of a solder joint. In order to form this structure, aging (maintenance of high-temperature conditions) is performed until an interfacial alloy layer of Cu3Sn has a thickness of at least 1.5 ?m.

Abstract: A method of forming a circuit board includes forming a conductive pattern on a substrate; forming a first negative resist on the substrate after formation of the conductive pattern; partially exposing the first negative resist on the surface of the conductive pattern to form a first via exposure portion; forming a second negative resist on the substrate after formation of the first via exposure portion; partially exposing the second negative resist on the first via exposure portion to form a second via exposure portion larger than the first via exposure portion; developing the first negative resist and the second negative resist after formation of the second via exposure portion to form a via opening reaching the conductive pattern; and filling the via opening with a conductive material.

Abstract: A method of forming a structure for an interfacial alloy layer which is able to improve the electromigration (EM) resistance of a solder joint. More specifically, in this structure, a controlled interfacial alloy layer is provided on both sides of a solder joint. In order to form this structure, aging (maintenance of high-temperature conditions) is performed until an interfacial alloy layer of Cu3Sn has a thickness of at least 1.5 ?m.

Abstract: A structure is formed which is prepared as a via for electrical contact passing through layers of an optical waveguide, in a multilayer structure including an electrical substrate and the laminated layers of the optical waveguide. The surface of an electrode pad is plated with solder. The layers of the optical waveguide are formed above the portion plated with solder are removed to expose the portion plated with solder. A device is prepared having both a light-emitter or photoreceptor in optical contact with the optical waveguide, and a stud (pillar). The stud (pillar) is inserted into the portion in which layers of the optical waveguide have been removed, and the plated solder is melted to bond the electrode pad on top of the electrical substrate to the tip of the inserted stud (pillar).

Abstract: Problem To improve the electromigration (EM) resistance of a solder joint. Solution The present invention provides a unique structure for an interfacial alloy layer which is able to improve the electromigration (EM) resistance of a solder joint, and a unique method of forming this structure. More specifically, in this unique structure, a controlled interfacial alloy layer is provided on both sides of a solder joint. In order to form this structure, aging (maintenance of high-temperature conditions) is performed until an interfacial alloy layer of Cu3Sn has a thickness of at least 1.5 ?m.

Abstract: A structure is formed which is prepared as a via for electrical contact passing through layers of an optical waveguide, in a multilayer structure including an electrical substrate and the laminated layers of the optical waveguide. The surface of an electrode pad is plated with solder. The layers of the optical waveguide are formed above the portion plated with solder are removed to expose the portion plated with solder. A device is prepared having both a light-emitter or photoreceptor in optical contact with the optical waveguide, and a stud (pillar). The stud (pillar) is inserted into the portion in which layers of the optical waveguide have been removed, and the plated solder is melted to bond the electrode pad on top of the electrical substrate to the tip of the inserted stud (pillar).

Abstract: A method of forming a circuit board includes forming a conductive pattern on a substrate; forming a first negative resist on the substrate after formation of the conductive pattern; partially exposing the first negative resist on the surface of the conductive pattern to form a first via exposure portion; forming a second negative resist on the substrate after formation of the first via exposure portion; partially exposing the second negative resist on the first via exposure portion to form a second via exposure portion larger than the first via exposure portion; developing the first negative resist and the second negative resist after formation of the second via exposure portion to form a via opening reaching the conductive pattern; and filling the via opening with a conductive material.

Abstract: A method of forming a circuit board includes forming a conductive pattern on a substrate; forming a first negative resist on the substrate after formation of the conductive pattern; partially exposing the first negative resist on the surface of the conductive pattern to form a first via exposure portion; forming a second negative resist on the substrate after formation of the first via exposure portion; partially exposing the second negative resist on the first via exposure portion to form a second via exposure portion larger than the first via exposure portion; developing the first negative resist and the second negative resist after formation of the second via exposure portion to form a via opening reaching the conductive pattern; and filling the via opening with a conductive material.

Abstract: A structure is formed which is prepared as a via for electrical contact passing through layers of an optical waveguide, in a multilayer structure including an electrical substrate and the laminated layers of the optical waveguide. The surface of an electrode pad is plated with solder. The layers of the optical waveguide are formed above the portion plated with solder are removed to expose the portion plated with solder. A device is prepared having both a light-emitter or photoreceptor in optical contact with the optical waveguide, and a stud (pillar). The stud (pillar) is inserted into the portion in which layers of the optical waveguide have been removed, and the plated solder is melted to bond the electrode pad on top of the electrical substrate to the tip of the inserted stud (pillar).

Abstract: Problem To improve the electromigration (EM) resistance of a solder joint. Solution The present invention provides a unique structure for an interfacial alloy layer which is able to improve the electromigration (EM) resistance of a solder joint, and a unique method of forming this structure. More specifically, in this unique structure, a controlled interfacial alloy layer is provided on both sides of a solder joint. In order to form this structure, aging (maintenance of high-temperature conditions) is performed until an interfacial alloy layer of Cu3Sn has a thickness of at least 1.5 ?m.

Abstract: A semiconductor package that has a superior high frequency characteristics and that can obtain a large area for an internal wiring pattern is provided. According to the present invention, a semiconductor package includes: a multilayer printed wiring board 12, and an IC chip, mounted on the obverse face of the multilayer wiring board 12, and multiple bump terminals 16, mounted on the reverse face. Each bump terminal 16 includes an insulating core 42 having a flat face 40 and a conductive coating deposited on all external surfaces except that of the flat face 40. The end faces of the conductive coatings 44 appear like rings around the insulating cores 42, and are soldered to annular connection pads 52 formed on the reverse face of the multilayer printed wiring board 12.

Abstract: A semiconductor package that has a superior high frequency characteristics and that can obtain a large area for an internal wiring pattern is provided. According to the present invention, a semiconductor package includes: a multilayer printed wiring board 12, and an IC chip, mounted on the obverse face of the multilayer wiring board 12, and multiple bump terminals 16, mounted on the reverse face. Each bump terminal 16 includes an insulating core 42 having a flat face 40 and a conductive coating deposited on all external surfaces except that of the flat face 40. The end faces of the conductive coatings 44 appear like rings around the insulating cores 42, and are soldered to annular connection pads 52 formed on the reverse face of the multilayer printed wiring board 12.

Abstract: A semiconductor package that has a superior high frequency characteristics and that can obtain a large area for an internal wiring pattern is provided. According to the present invention, a semiconductor package includes: a multilayer printed wiring board 12, and an IC chip, mounted on the obverse face of the multilayer wiring board 12, and multiple bump terminals 16, mounted on the reverse face. Each bump terminal 16 includes an insulating core 42 having a flat face 40 and a conductive coating deposited on all external surfaces except that of the flat face 40. The end faces of the conductive coatings 44 appear like rings around the insulating cores 42, and are soldered to annular connection pads 52 formed on the reverse face of the multilayer printed wiring board 12.