Abstract: A silver-coated resin particle having a resin particle and a silver coating layer provided on a surface of the resin particle, in which an average value of a 10% compressive elastic modulus is in a range of 500 MPa or more and 15,000 MPa or less and a variation coefficient of the 10% compressive elastic modulus is 30% or less.

Abstract: A silver-coated resin particle having a resin particle and a silver coating layer provided on a surface of the resin particle, in which an average value of a 10% compressive elastic modulus is in a range of 500 MPa or more and 15,000 MPa or less and a variation coefficient of the 10% compressive elastic modulus is 30% or less.

Abstract: A silver-coated resin particle including a heat-resistant resin core particle and a silver coating layer formed on the surface of the resin core particle. The average grain diameter of the resin core particle is 0.1 to 10 ?m, the amount of silver contained in the silver coating layer is 60 to 90 parts by mass, relative to 100 parts by mass of the silver-coated resin particle, and the exothermic peak temperature of the silver-coated resin particle by differential thermal analysis is 265° C. or higher.

Abstract: A conductive paste includes: a silver-coated resin; and an organic vehicle that includes a thermosetting resin composition, a curing agent, and a solvent, in which the thermosetting resin composition is an epoxy resin composition which is solid at room temperature and has a melt viscosity of 0.5 Pa·s or lower at 150° C., and a mass ratio of a content of the thermosetting resin composition to a content of the silver-coated resin is 10 to 40:60 to 90.

Abstract: A silver-coated resin particle including a heat-resistant resin core particle and a silver coating layer formed on the surface of the resin core particle. The average grain diameter of the resin core particle is 0.1 to 10 ?m, the amount of silver contained in the silver coating layer is 60 to 90 parts by mass, relative to 100 parts by mass of the silver-coated resin particle, and the exothermic peak temperature of the silver-coated resin particle by differential thermal analysis is 265° C. or higher.

Abstract: A conductive paste includes: a silver-coated resin; and an organic vehicle that includes a thermosetting resin composition, a curing agent, and a solvent, in which the thermosetting resin composition is an epoxy resin composition which is solid at room temperature and has a melt viscosity of 0.5 Pa·s or lower at 150° C., and a mass ratio of a content of the thermosetting resin composition to a content of the silver-coated resin is 10 to 40:60 to 90.

Abstract: An object of the present invention is to achieve improvement in performance of a thin film transistor including an oxide as a gate insulating layer, or simplification and energy saving in the processes of producing such a thin film transistor. A thin film transistor (100) of the present invention includes a first oxide layer (possibly containing inevitable impurities) (32) consisting of lanthanum (La) and tantalum (Ta), which has a surface (32a) formed after a precursor layer obtained from a precursor solution as a start material including a precursor containing lanthanum (La) and a precursor containing tantalum (Ta) as solutes is exposed to a hydrochloric acid vapor, between a gate electrode (20) and a channel (52). Moreover, in the thin film transistor, the surface (32a) of the first oxide layer (32) is in contact with the channel (52).

Abstract: An object of the present invention is to achieve improvement in performance of a thin film transistor including an oxide as a gate insulating layer, or simplification and energy saving in the processes of producing such a thin film transistor. A thin film transistor (100) of the present invention includes a first oxide layer (possibly containing inevitable impurities) (32) consisting of lanthanum (La) and tantalum (Ta), which has a surface (32a) formed after a precursor layer obtained from a precursor solution as a start material including a precursor containing lanthanum (La) and a precursor containing tantalum (Ta) as solutes is exposed to a hydrochloric acid vapor, between a gate electrode (20) and a channel (52). Moreover, in the thin film transistor, the surface (32a) of the first oxide layer (32) is in contact with the channel (52).

Abstract: In a planer type PNPN semiconductor switch having a MOS FET structure, a field plate electrode is embedded in an insulator covering a surface of a semiconductor substrate to overlie an interface between the semiconductor substrate and a P gate region for limiting an extention of a depletion layer from an anode region to a P gate region.

Abstract: A PNPN semiconductor switch including an N type semiconductor substrate, spaced apart first and second P type diffused regions formed on a surface of an N type substrate, spaced apart first and second N type diffused regions formed in the second P type diffused region, a first gate insulating layer formed on the surface of the second P type diffused region between the first and second N type diffused regions to cover portions thereof, a first gate electrode formed on the first gate insulating layer between the first and second N type diffused regions, a resistance region disposed on the first gate insulating layer, one end of the resistance region on the side opposite to the first gate electrode, a second gate insulating layer overlying the first gate electrode and the resistance region, a semiinsulating layer formed on the surface of the substrate except over the first and second P type diffused regions, an insulating layer overlying the semiinsulating layer, a P gate electrode electrically connected to the