Patents by Inventor Hiroki Amemiya
Hiroki Amemiya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170069497Abstract: A method for plasma etching a SiC film that is formed with an etching mask and is on a wafer (W), wherein a processing vessel is supplied with a mixed gas comprising a noble gas and a process gas that includes SF6 gas and O2 gas, and the SiC film is etched by the mixed gas plasma. This etching is conducted using a magnetron RIE device.Type: ApplicationFiled: May 1, 2015Publication date: March 9, 2017Applicant: TOKYO ELECTRON LIMITEDInventor: Hiroki AMEMIYA
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Patent number: 8058585Abstract: A plasma processing method includes the steps of: loading a substrate on a lower electrode, the substrate having a resist mask formed on a transcription film; supplying a processing gas into a processing chamber; forming a magnetic field, which is oriented toward one direction and perpendicular to a line connecting an upper and the lower electrode; supplying a high frequency power to the lower electrode in the processing chamber to thereby form an electric field; converting the processing gas into a plasma by a magnetron discharge caused by a presence of an orthogonal electromagnetic field; and forming lenses on the transcription film by using the plasma. The high frequency power is supplied to the lower electrode while controlling the magnitude of the electric power divided by a surface area of the substrate to be in a range from about 1200 W/31415.9 mm2 to 2000 W/31415.9 mm2.Type: GrantFiled: March 12, 2007Date of Patent: November 15, 2011Assignee: Tokyo Electron LimitedInventors: Hiroki Amemiya, Akihito Toda, Hiroshi Nagahata
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Patent number: 7875196Abstract: A method for forming micro lenses includes the step of performing an etching treatment to an object to be processed, which includes a lens material layer and a mask layer having lens shapes and formed on the lens material layer, using an etching gas including SF6 gas and CHF3 gas, an etching gas including SF6 gas and CO gas, an etching gas including a gas having therein carbon and fluorine and CO gas, or an etching gas including two or more kinds of gases from a first gas having therein carbon and fluorine and a second gas having therein carbon and fluorine, to etch the lens material layer and the mask layer and transfer the lens shapes of the mask layer to the lens material layer, thereby forming the micro lenses.Type: GrantFiled: July 30, 2009Date of Patent: January 25, 2011Assignee: Tokyo Electron LimitedInventor: Hiroki Amemiya
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Patent number: 7862732Abstract: In a method for forming micro lenses, a lens material layer made of an inorganic material is formed on a substrate, and an intermediate layer made of an organic material is formed on the lens material layer. Then, a mask layer made of an organic material is formed on the intermediate layer, and lens shapes are formed in the mask layer. The lens shapes of the mask layer are transcribed to the intermediate layer by etching the mask layer and the intermediate layer. Thereafter, the lens shapes of the intermediate layer are transcribed to the lens material layer to form micro lenses by etching the intermediate layer and the lens material layer using a processing gas containing SF6 gas and CHF3 gas.Type: GrantFiled: June 12, 2007Date of Patent: January 4, 2011Assignee: Tokyo Electron LimitedInventor: Hiroki Amemiya
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Patent number: 7708899Abstract: A method for forming micro lenses includes the step of performing an etching treatment to an object to be processed, which includes a lens material layer and a mask layer having lens shapes and formed on the lens material layer, using an etching gas including SF6 gas and CHF3 gas, an etching gas including SF6 gas and CO gas, an etching gas including a gas having therein carbon and fluorine and CO gas, or an etching gas including two or more kinds of gases from a first gas having therein carbon and fluorine and a second gas having therein carbon and fluorine, to etch the lens material layer and the mask layer and transfer the lens shapes of the mask layer to the lens material layer, thereby forming the micro lenses.Type: GrantFiled: September 20, 2004Date of Patent: May 4, 2010Assignee: Tokyo Electron LimitedInventor: Hiroki Amemiya
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Patent number: 7628930Abstract: A method for forming micro lenses includes the step of performing an etching treatment to an object to be processed, which includes a lens material layer and a mask layer having lens shapes and formed on the lens material layer, using an etching gas including SF6 gas and CHF3 gas, an etching gas including SF6 gas and CO gas, an etching gas including a gas having therein carbon and fluorine and CO gas, or an etching gas including two or more kinds of gases from a first gas having therein carbon and fluorine and a second gas having therein carbon and fluorine, to etch the lens material layer and the mask layer and transfer the lens shapes of the mask layer to the lens material layer, thereby forming the micro lenses.Type: GrantFiled: September 20, 2004Date of Patent: December 8, 2009Assignee: Tokyo Electron LimitedInventor: Hiroki Amemiya
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Publication number: 20090289031Abstract: A method for forming micro lenses includes the step of performing an etching treatment to an object to be processed, which includes a lens material layer and a mask layer having lens shapes and formed on the lens material layer, using an etching gas including SF6 gas and CHF3 gas, an etching gas including SF6 gas and CO gas, an etching gas including a gas having therein carbon and fluorine and CO gas, or an etching gas including two or more kinds of gases from a first gas having therein carbon and fluorine and a second gas having therein carbon and fluorine, to etch the lens material layer and the mask layer and transfer the lens shapes of the mask layer to the lens material layer, thereby forming the micro lenses.Type: ApplicationFiled: July 30, 2009Publication date: November 26, 2009Applicant: TOKYO ELECTRON LIMITEDInventor: Hiroki AMEMIYA
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Publication number: 20080176408Abstract: A method for manufacturing a semiconductor device includes mounting a target substrate on a mounting table in a processing chamber; performing a plasma etching process via a resist mask; and performing an ashing process for removing the resist mask in the same processing chamber. Further, a temperature control of the target substrate is performed to increase the temperature of the target substrate higher than a temperature level in the plasma etching process in the ashing process.Type: ApplicationFiled: December 31, 2007Publication date: July 24, 2008Applicant: TOKYO ELECTRON LIMITEDInventors: Akihito TODA, Hiroki Amemiya
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Publication number: 20080000872Abstract: In a method for forming micro lenses, a lens material layer made of an inorganic material is formed on a substrate, and an intermediate layer made of an organic material is formed on the lens material layer. Then, a mask layer made of an organic material is formed on the intermediate layer, and lens shapes are formed in the mask layer. The lens shapes of the mask layer are transcribed to the intermediate layer by etching the mask layer and the intermediate layer. Thereafter, the lens shapes of the intermediate layer are transcribed to the lens material layer to form micro lenses by etching the intermediate layer and the lens material layer using a processing gas containing SF6 gas and CHF3 gas.Type: ApplicationFiled: June 12, 2007Publication date: January 3, 2008Applicant: TOKYO ELECTRON LIMITEDInventor: Hiroki Amemiya
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Patent number: 7303690Abstract: In a method for forming microlenses, an etching process is performed by using a processing gas on an object to be processed provided with a substrate, a lens material layer formed on the substrate and a mask layer of a lens shape formed on the lens material layer to etch the lens material layer and the mask layer, so that the lens shape of the mask layer is transcribed to the lens material layer. The processing gas is a gaseous mixture of a gas containing fluorine atoms but no carbon atoms and a fluorocarbon-based gas having a ratio of the number of carbon atoms to the number of fluorine atoms which is greater than or equal to 0.5, the gaseous mixture having no oxygen gas.Type: GrantFiled: August 31, 2005Date of Patent: December 4, 2007Assignee: Tokyo Electron LimitedInventors: Hiroki Amemiya, Akihiro Kikuchi
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Publication number: 20070221632Abstract: [Object] In forming micro lenses, a transcription film formed on a wafer is etched via a resist mask to thereby reduce distances between the micro lenses in a short period of time. [Constitution of the Invention] In performing an etching, a processing gas containing CF4 and C4F8 gas is supplied to a processing chamber and a high frequency power is supplied to a lower electrode such that the magnitude of the power divided by a surface area of a substrate is in a range from about 1200 W/31415.9 mm2 to 2000 W/31415.9 mm2. By converting the processing gas into a plasma, a deposition of deposits on sidewalls of the lenses formed on the resist mask is performed while performing the etching of the wafer, thereby forming the micro lenses.Type: ApplicationFiled: March 12, 2007Publication date: September 27, 2007Inventors: Hiroki Amemiya, Akihito Toda, Hiroshi Nagahata
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Patent number: 7183943Abstract: A model railway traffic light apparatus, including: at least one signal light; a sensor to detect a timing when a toy train which travels along a rail passes through a predetermined position; and a control section to switch sequentially a series of light turning-on patterns of the signal light and count a period from a first passing of the toy train which is detected by the sensor and until a second passing of the toy train which is just after the first passing and which is detected by the sensor, and to set a switching timing of switching the light turning-on patterns to be variable corresponding to the period.Type: GrantFiled: November 2, 2004Date of Patent: February 27, 2007Assignee: Tomy Company, Ltd.Inventor: Hiroki Amemiya
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Publication number: 20060043068Abstract: In a method for forming microlenses, an etching process is performed by using a processing gas on an object to be processed provided with a substrate, a lens material layer formed on the substrate and a mask layer of a lens shape formed on the lens material layer to etch the lens material layer and the mask layer, so that the lens shape of the mask layer is transcribed to the lens material layer. The processing gas is a gaseous mixture of a gas containing fluorine atoms but no carbon atoms and a fluorocarbon-based gas having a ratio of the number of carbon atoms to the number of fluorine atoms which is greater than or equal to 0.5, the gaseous mixture having no oxygen gas.Type: ApplicationFiled: August 31, 2005Publication date: March 2, 2006Applicant: TOKYO ELECTRON LIMITEDInventors: Hiroki Amemiya, Akihiro Kikuchi
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Publication number: 20050184199Abstract: A model railway traffic light apparatus, including: at least one signal light; a sensor to detect a timing when a toy train which travels along a rail passes through a predetermined position; and a control section to switch sequentially a series of light turning-on patterns of the signal light and count a period from a first passing of the toy train which is detected by the sensor and until a second passing of the toy train which is just after the first passing and which is detected by the sensor, and to set a switching timing of switching the light turning-on patterns to be variable corresponding to the period.Type: ApplicationFiled: November 2, 2004Publication date: August 25, 2005Applicant: TOMY COMPANY, LTD.Inventor: Hiroki Amemiya
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Publication number: 20050061772Abstract: A method for forming micro lenses includes the step of performing an etching treatment to an object to be processed, which includes a lens material layer and a mask layer having lens shapes and formed on the lens material layer, using an etching gas including SF6 gas and CHF3 gas, an etching gas including SF6 gas and CO gas, an etching gas including a gas having therein carbon and fluorine and CO gas, or an etching gas including two or more kinds of gases from a first gas having therein carbon and fluorine and a second gas having therein carbon and fluorine, to etch the lens material layer and the mask layer and transfer the lens shapes of the mask layer to the lens material layer, thereby forming the micro lenses.Type: ApplicationFiled: September 20, 2004Publication date: March 24, 2005Applicant: TOKYO ELECTRON LIMITEDInventor: Hiroki Amemiya
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Patent number: 6536355Abstract: A cleaning model railroad car which can do various cleaning by itself and which can do cleaning effectively regardless of a travel speed thereof. The cleaning model railroad car 8 comprises: a car body 20; wheels 8b attached to the car body, for riding on rails 3a and 3b; a motor 8a attached to the car body, to which an electrical current is supplied through the wheels on the rails and a motor shaft 8e is provided; a dust collection chamber 21 provided at the car body; a head mounting concave portion 23 provided below the motor, for opening toward a lower surface of the car body below thereof and communicating with the dust collection chamber; and a cleaning head 24 or 25 provided at the motor shaft projected in the head mounting concave portion, which can be installed to and removed from the motor shaft.Type: GrantFiled: October 6, 2000Date of Patent: March 25, 2003Assignee: Tomy Company, Ltd.Inventor: Hiroki Amemiya