Abstract: A medical device includes an injection unit connectable to a barrel that is configured to contain a drug and having internal spaces that allow passage of the drug and includes a first measurement unit that measures a pressure at a first part in the distal end side of the internal spaces and a pressure at a second part closer to the proximal end side of the internal spaces than the first part.

Abstract: A semiconductor manufacturing method by a semiconductor manufacturing device includes: positioning an anode, which causes an oxidation reaction, in a first end of a base material containing an aluminum oxide and a cathode, which causes a reduction reaction, in a second end of the base material; heating the base material to melt it with the anode being in contact with the first end of the base material and the cathode being in contact with the second end of the base material; causing a current to flow between the anode and the cathode to cause a molten salt electrolysis reaction for a whole of or a part of a period in which the base material is at least partially melted; and after the molten salt electrolysis reaction, cooling the base material to form a p-type aluminum oxide semiconductor layer and an n-type aluminum oxide semiconductor layer.

Abstract: A semiconductor manufacturing method by a semiconductor manufacturing device includes: positioning an anode, which causes an oxidation reaction, in a first end of a base material containing an aluminum oxide and a cathode, which causes a reduction reaction, in a second end of the base material; heating the base material to melt it with the anode being in contact with the first end of the base material and the cathode being in contact with the second end of the base material; causing a current to flow between the anode and the cathode to cause a molten salt electrolysis reaction for a whole of or a part of a period in which the base material is at least partially melted; and after the molten salt electrolysis reaction, cooling the base material to form a p-type aluminum oxide semiconductor layer and an n-type aluminum oxide semiconductor layer.

Abstract: A motor control device includes an inverter driving an electric motor, a vector controller determining an output frequency and a command output voltage to drive the inverter, a speed controller determining a torque command value, a current command calculation unit and an inertia moment estimation unit obtaining a load torque estimate value and estimating inertia moment that is a combination of inertia moment of a motor rotor and inertia moment of a load apparatus, based on a deviation between an acceleration/deceleration torque output value obtained by subtraction of the load torque estimation from motor torque and an acceleration/deceleration torque estimate value obtained by multiplying a variation amount in the speed estimate value per unit time by an inertia moment estimate value. The speed controller is configured to be capable of adjusting a control parameter based on an inertia moment estimate value estimated by the inertia moment estimation unit.

Abstract: A motor control device includes an inverter driving an electric motor, a vector controller determining an output frequency and a command output voltage to drive the inverter, a speed controller determining a torque command value, a current command calculation unit and an inertia moment estimation unit obtaining a load torque estimate value and estimating inertia moment that is a combination of inertia moment of a motor rotor and inertia moment of a load apparatus, based on a deviation between an acceleration/deceleration torque output value obtained by subtraction of the load torque estimation from motor torque and an acceleration/deceleration torque estimate value obtained by multiplying a variation amount in the speed estimate value per unit time by an inertia moment estimate value. The speed controller is configured to be capable of adjusting a control parameter based on an inertia moment estimate value estimated by the inertia moment estimation unit.