Abstract: The electrode connection structure includes: a first base material; a first electrode layer and a second electrode layer that are located on the first base material; a second base material; a first fastening member and a second fastening member; and an insulating member, wherein the first fastening member includes: a shaft portion inserted in a first through hole penetrating the first electrode layer and the insulating member; and two clamping portions that clamp a periphery of the first through hole in each of the first electrode layer and the insulating member, and the second fastening member includes: a shaft portion inserted in a second through hole penetrating the second electrode layer and the insulating member; and two clamping portions that clamp a periphery of the second through hole in each of the second electrode layer and the insulating member.

Abstract: The electrode connection structure includes: a first base material; a first electrode layer and a second electrode layer that are located on the first base material; a second base material; a first fastening member and a second fastening member; and an insulating member, wherein the first fastening member includes: a shaft portion inserted in a first through hole penetrating the first electrode layer and the insulating member; and two clamping portions that clamp a periphery of the first through hole in each of the first electrode layer and the insulating member, and the second fastening member includes: a shaft portion inserted in a second through hole penetrating the second electrode layer and the insulating member; and two clamping portions that clamp a periphery of the second through hole in each of the second electrode layer and the insulating member.

Abstract: Provided is an input device including; a capacitance sensor that has an operation panel to which a detection electrode is fixed, and a capacitance detection circuit, to detect contact of a finger with the operation panel and slide operation with the finger; a push switch that is provided on a back face side of the operation panel to detect push operation on the operation panel; and a control circuit that is connected to the capacitance detection circuit and the push switch. The control circuit outputs a signal of causing a window W to perform manual opening and closing operation when the slide operation with the finger is detected, and outputs a signal of causing the window W to perform automatic fully opening and closing operation when contact of the finger with each of upper and lower end portions of the operation panel is detected and push operation on the operation panel is detected within a predetermined period of time after the contact is detected.

Abstract: The invention provides a method of manufacturing a semiconductor device at low cost in which the gate insulation film having a trench structure is not damaged by arsenic ions when the emitter layer or the like is formed and the insulation breakdown voltage is enhanced. A gate electrode made of polysilicon formed in a trench is thermally oxidized in a high temperature furnace or the like to form a thick polysilicon thermal oxide film on the gate electrode. Impurity ions are then ion-implanted to form an N type semiconductor layer that is to be an emitter layer or the like. At this time, the polysilicon thermal oxide film is formed thicker than the projected range Rp of impurity ions in the silicon oxide film for forming the N type semiconductor layer as the emitter layer or the like by ion implantation. This prevents a gate insulation film between the gate electrode and the N type semiconductor layer from being damaged by the impurity ions.

Abstract: The invention provides a method of manufacturing a semiconductor device at low cost in which the gate insulation film having a trench structure is not damaged by arsenic ions when the emitter layer or the like is formed and the insulation breakdown voltage is enhanced. A gate electrode made of polysilicon formed in a trench is thermally oxidized in a high temperature furnace or the like to form a thick polysilicon thermal oxide film on the gate electrode. Impurity ions are then ion-implanted to form an N type semiconductor layer that is to be an emitter layer or the like. At this time, the polysilicon thermal oxide film is formed thicker than the projected range Rp of impurity ions in the silicon oxide film for forming the N type semiconductor layer as the emitter layer or the like by ion implantation. This prevents a gate insulation film between the gate electrode and the N type semiconductor layer from being damaged by the impurity ions.

Abstract: An object of the invention is to provide a display device of an image forming apparatus capable of displaying information that the user wants to obtain in a visually easy-to-recognize manner. In a compound image forming apparatus provided with: one of original reading means for reading image information from an original, image receiving means for receiving image information from a terminal connected to a network and a line image receiving means for receiving image information from a telephone line; image forming means for forming an image based on the image information obtained by the means; and a display portion for displaying the condition of the apparatus, a display condition control portion is provided that changes the display condition of the display portion to a visually easy-to-recognize condition when the condition of the compound image forming apparatus is changed.

Abstract: An object of the invention is to provide a display device of an image forming apparatus capable of displaying information that the user wants to obtain in a visually easy-to-recognize manner. In a compound image forming apparatus provided with: one of original reading means for reading image information from an original, image receiving means for receiving image information from a terminal connected to a network and a line image receiving means for receiving image information from a telephone line; image forming means for forming an image based on the image information obtained by the means; and a display portion for displaying the condition of the apparatus, a display condition control portion is provided that changes the display condition of the display portion to a visually easy-to-recognize condition when the condition of the compound image forming apparatus is changed.

Abstract: An object of the invention is to provide a display device of an image forming apparatus capable of displaying information that the user wants to obtain in a visually easy-to-recognize manner. In a complex image forming apparatus provided with: one of original reading means for reading image information from an original, image receiving means for receiving image information from a terminal connected to a network and a line image receiving means for receiving image information from a telephone line; image forming means for forming an image based on the image information obtained by the means; and a display portion for displaying the condition of the apparatus, a display condition control portion is provided that changes the display condition of the display portion to a visually easy-to-recognize condition when the condition of the complex image forming apparatus is changed.

Abstract: An object of the invention is to provide a display device of an image forming apparatus capable of displaying information that the user wants to obtain in a visually easy-to-recognize manner. In a complex image forming apparatus provided with: one of original reading means for reading image information from an original, image receiving means for receiving image information from a terminal connected to a network and a line image receiving means for receiving image information from a telephone line; image forming means for forming an image based on the image information obtained by the means; and a display portion for displaying the condition of the apparatus, a display condition control portion is provided that changes the display condition of the display portion to a visually easy-to-recognize condition when the condition of the complex image forming apparatus is changed.