Patents by Inventor Hiroki Etou
Hiroki Etou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7554104Abstract: A bolt includes a main body and a spring pin. The main body includes a head and a shaft. The spring pin includes a base portion and an end portion. The shaft includes a portion of external thread and a hollow portion. The head includes a top surface and a hole opened in the top surface. The hole is connected to the hollow portion. The base portion is arranged in the hollow potion to move along an axis of the main body. The end portion is arranged in the hole to move along the axis. The spring pin is energized toward a side of the head such that the end portion protrudes beyond the top surface. The end portion is electrically connected to the portion of external thread.Type: GrantFiled: March 15, 2007Date of Patent: June 30, 2009Assignee: NEC Electronics CorporationInventors: Yoshirou Shimada, Hiroki Etou, Ryou Kashihara
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Publication number: 20070243057Abstract: A bolt includes a main body and a spring pin. The main body includes a head and a shaft. The spring pin includes a base portion and an end portion. The shaft includes a portion of external thread and a hollow portion. The head includes a top surface and a hole opened in the top surface. The hole is connected to the hollow portion. The base portion is arranged in the hollow potion to move along an axis of the main body. The end portion is arranged in the hole to move along the axis. The spring pin is energized toward a side of the head such that the end portion protrudes beyond the top surface. The end portion is electrically connected to the portion of external thread.Type: ApplicationFiled: March 15, 2007Publication date: October 18, 2007Applicant: NEC ELECTRONICS CORPORATIONInventors: Yoshirou Shimada, Hiroki Etou, Ryou Kashihara
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Patent number: 7211868Abstract: A protection circuit device using a MOSFET has a plural of conductive paths separated electrically, a MOSFET chip integrating two power MOSFETs in one chip where a gate electrode and a source electrode are fixed on the desired conductive path, conductive material provided on a common drain electrode of the MOSFET, and insulating resin covering said MOSFET and supporting said conductive path in one body. Removing a drawing-around of the common drain electrode and fixing the source electrode directly on the conductive path, low ON-state resistance is realized.Type: GrantFiled: March 16, 2001Date of Patent: May 1, 2007Assignee: Sanyo Electric Co., Ltd.Inventors: Noriaki Sakamoto, Yoshiyuki Kobayashi, Hirokazu Fukuda, Hiroki Etou, Kouji Takahashi
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Patent number: 6967139Abstract: In a conventional power MOSFET, an electric field concentration occurs at a gate electrode bottom portion on the outermost periphery of an operating area, thereby causing a deterioration in high voltage strength between the drain and the source, or between the collector and emitter. In this invention, a trench at the outermost periphery of an operating area is shallower than trenches of the operating area. Thereby, the electric field concentration at the gate electrode bottom portion on the outermost periphery of the operating area is relieved, and a deterioration in high voltage strength between the drain and source is suppressed. Furthermore, by narrowing the outermost peripheral trench aperture portion, trenches different in depth can be formed by an identical step.Type: GrantFiled: July 19, 2004Date of Patent: November 22, 2005Assignee: Sanyo Electric Co., Ltd.Inventors: Makoto Oikawa, Hiroki Etou, Hirotoshi Kubo, Shouji Miyahara
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Publication number: 20050029588Abstract: A protection circuit device using a MOSFET has a plural of conductive paths separated electrically, a MOSFET chip integrating two power MOSFETs in one chip where a gate electrode and a source electrode are fixed on the desired conductive path, conductive material provided on a common drain electrode of the MOSFET, and insulating resin covering said MOSFET, and supporting said conductive path in one body. Removing a drawing-around of the common drain electrode and fixing the source electrode directly on the conductive path, low ON-state resistance is realized.Type: ApplicationFiled: September 15, 2004Publication date: February 10, 2005Applicant: Sanyo Electric Co., Ltd.Inventors: Noriaki Sakamoto, Yoshiyuki Kobayashi, Hirokazu Fukuda, Hiroki Etou, Kouji Takahashi
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Publication number: 20040256667Abstract: In a conventional power MOSFET, an electric field concentration occurs at a gate electrode bottom portion on the outermost periphery of an operating area, thereby causing a deterioration in high voltage strength between the drain and the source, or between the collector and emitter. In this invention, a trench at the outermost periphery of an operating area is shallower than trenches of the operating area. Thereby, the electric field concentration at the gate electrode bottom portion on the outermost periphery of the operating area is relieved, and a deterioration in high voltage strength between the drain and source is suppressed. Furthermore, by narrowing the outermost peripheral trench aperture portion, trenches different in depth can be formed by an identical step.Type: ApplicationFiled: July 19, 2004Publication date: December 23, 2004Inventors: Makoto Oikawa, Hiroki Etou, Hirotoshi Kubo, Shouji Miyahara
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Patent number: 6828626Abstract: In a conventional power MOSFET, an electric field concentration occurs at a gate electrode bottom portion on the outermost periphery of an operating area, thereby causing a deterioration in high voltage strength between the drain and the source, or between the collector and emitter. In this invention, a trench at the outermost periphery of an operating area is shallower than trenches of the operating area. Thereby, the electric field concentration at the gate electrode bottom portion on the outermost periphery of the operating area is relieved, and a deterioration in high voltage strength between the drain and source is suppressed. Furthermore, by narrowing the outermost peripheral trench aperture portion, trenches different in depth can be formed by an identical step.Type: GrantFiled: September 25, 2002Date of Patent: December 7, 2004Assignee: Sanyo Electric Co., Ltd.Inventors: Makoto Oikawa, Hiroki Etou, Hirotoshi Kubo, Shouji Miyahara
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Publication number: 20030080379Abstract: In a conventional power MOSFET, an electric field concentration occurs at a gate electrode bottom portion on the outermost periphery of an operating area, thereby causing a deterioration in high voltage strength between the drain and the source, or between the collector and emitter. In this invention, a trench at the outermost periphery of an operating area is shallower than trenches of the operating area. Thereby, the electric field concentration at the gate electrode bottom portion on the outermost periphery of the operating area is relieved, and a deterioration in high voltage strength between the drain and source is suppressed. Furthermore, by narrowing the outermost peripheral trench aperture portion, trenches different in depth can be formed by an identical step.Type: ApplicationFiled: September 25, 2002Publication date: May 1, 2003Inventors: Makoto Oikawa, Hiroki Etou, Hirotoshi Kubo, Shouji Miyahara
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Patent number: 6545364Abstract: After a trench 54 is formed in a conductive foil 60, a circuit element is mounted in a flip chip method. Then, an insulating resin 50 is covered on the conductive foil 60 as a support substrate. After reversion, the conductive foil 60 is polished over the insulating resin 50 as a support substrate at this time to separate the conductive paths. Accordingly, a circuit device having the conductive paths 51 and the circuit elements 52 supported by the insulating resin 50 can be produced without employing the support substrate.Type: GrantFiled: March 16, 2001Date of Patent: April 8, 2003Assignee: Sanyo Electric Co., Ltd.Inventors: Noriaki Sakamoto, Yoshiyuki Kobayashi, Junji Sakamoto, Shigeaki Mashimo, Katsumi Okawa, Eiju Maehara, Kouji Takahashi, Hirokazu Fukuda, Hiroki Etou
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Publication number: 20020053744Abstract: A protection circuit device using a MOSFET has a plural of conductive paths separated electrically, a MOSFET chip integrating two power MOSFETs in one chip where a gate electrode and a source electrode are fixed on the desired conductive path, conductive material provided on a common drain electrode of the MOSFET, and insulating resin covering said MOSFET and supporting said conductive path in one body. Removing a drawing-around of the common drain electrode and fixing the source electrode directly on the conductive path, low ON-state resistance is realized.Type: ApplicationFiled: March 16, 2001Publication date: May 9, 2002Inventors: Noriaki Sakamoto, Yoshiyuki Kobayashi, Hirokazu Fukuda, Hiroki Etou, Kouji Takahashi
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Publication number: 20020027276Abstract: After a trench 54 is formed in a conductive foil 60, a circuit element is mounted in a flip chip method. Then, an insulating resin 50 is covered on the conductive foil 60 as a support substrate. After reversion, the conductive foil 60 is polished over the insulating resin 50 as a support substrate at this time to separate the conductive paths. Accordingly, a circuit device having the conductive paths 51 and the circuit elements 52 supported by the insulating resin 50 can be produced without employing the support substrate.Type: ApplicationFiled: March 16, 2001Publication date: March 7, 2002Inventors: Noriaki Sakamoto, Yoshiyuki Kobayashi, Junji Sakamoto, Shigeaki Mashimo, Katsumi Okawa, Eiju Maehara, Kouji Takahashi, Hirokazu Fukuda, Hiroki Etou
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Patent number: 5915179Abstract: In the present invention, a vertical type MOSFET and a Schottky barrier diode which are used as a switching device of a DC--DC converter are formed on the same semiconductor substrate. Further, a barrier metal which is required for the Schottky barrier diode is also formed on an electrode portion of the vertical type MOSFET. In addition, a Schottky barrier diode forming region is formed to have low impurity concentration than a vertical type MOSFET forming region.Type: GrantFiled: June 7, 1996Date of Patent: June 22, 1999Assignee: Sanyo Electric Co., Ltd.Inventors: Hiroki Etou, Kazunori Ohno, Takaaki Saito, Naofumi Tsuchiya, Toshinari Utsumi