Abstract: There is provided a technique that includes forming a film on at least one substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) performing a first set a number of times, the first set including non-simultaneously performing: supplying a precursor to the at least one substrate from at least one first ejecting hole of a first nozzle arranged along a substrate arrangement direction of a substrate arrangement region where the at least one substrate is arranged; and supplying a reactant to the at least one substrate; and (b) performing a second set a number of times, the second set including non-simultaneously performing: supplying the precursor to the at least one substrate from at least one second ejecting hole of a second nozzle arranged along the substrate arrangement direction of the substrate arrangement region; and supplying the reactant to the at least one substrate.

Abstract: Provided is a substrate processing apparatus including: a processing chamber that accommodates a substrate holder holding a plurality of substrates; a plurality of gas suppliers that are disposed in a direction parallel to a surface of the substrate, extend from an outside to an inside of the processing chamber, and each include a first gas introduction portion that introduces a first gas, a second gas introduction portion that introduces a second gas, and a mixing portion that mixes the first gas with the second gas; and an accommodating portion that is disposed to extend in the direction parallel to the surface of the substrate on a lateral side of the processing chamber and accommodates the plurality of gas suppliers.

Abstract: A technique includes (a) processing a substrate disposed in a process space by controlling a decomposition rate of a process gas supplied into the process space based on a predetermined relationship between the decomposition rate and a residence time of the process gas.

Abstract: There is provided a technique capable of improving a step coverage performance of a film formed on a substrate. According to one aspect thereof, there is provided a substrate processing method including: (a1) supplying a first process gas such that a transfer velocity of the first process gas toward an edge region of a substrate is faster than the transfer velocity of the first process gas toward a central region of the substrate; (a2) supplying a second process gas such that a transfer velocity of the second process gas toward the central region of the substrate is faster than the transfer velocity of the second process gas toward the edge region of the substrate; and (b) supplying a reactive gas toward the substrate.

Abstract: A substrate processing apparatus includes a process chamber for processing a substrate, a hydrogen- and oxygen-containing gas supply system supplying the gas containing hydrogen and oxygen into the chamber, an inert gas supply system supplying an inert gas into the chamber, an exhaust system exhausting the chamber's interior, a processing gas supply system supplying a precursor gas and a nitriding agent into the chamber, a pressure controller controlling a pressure of the interior, and a controller. The controller controls the apparatus to perform, (a) modifying a film on the substrate at a first pressure by supplying the gas to the film; (b) purging the interior, at a second pressure, so the gas left after (a) remains in a gaseous state; (c), vacuuming the interior to reduce the pressure; and (e), before (a), forming the film on the substrate that contains nitrogen and a ring structure composed of silicon and carbon.

Abstract: There is included (a) modifying a film formed on a substrate in a process chamber set at a first pressure by supplying a gas containing hydrogen and oxygen to the film; (b) purging an interior of the process chamber by supplying an inert gas into the process chamber and exhausting the interior of the process chamber, at a second pressure at which the gas containing hydrogen and oxygen remaining in the process chamber after performing (a) is maintained in a gaseous state; and (c) vacuuming the interior of the process chamber so as to reduce a pressure of the interior of the process chamber after performing (b) to a third pressure lower than the second pressure.

Abstract: For reducing a risk of oxygen permeation, there is provided a technique that includes: a first gas supplier supplying a first gas; a first structure allowing the first gas to pass therethrough from the first gas supplier; a second structure allowing the first gas to pass therethrough from the first structure; a third structure allowing the first gas to pass therethrough from the second structure; a process chamber to which the first gas is supplied from the third structure; a first seal between the first structure and the second structure; a second seal between the second structure and the third structure; a second gas supplier supplying a second gas; a first gas path arranged along the second seal to allow the second gas to pass therethrough; and a second gas path arranged along the first seal to allow the second gas to pass therethrough.

Abstract: It is possible to improve a step coverage performance of a film formed on a substrate provided with a concave structure. There is provided a technique that includes: (a) supplying a source gas to a concave structure of a substrate provided with an adsorption site on a surface thereof at a rate faster than an adsorption rate at which a precursor of the source gas is adsorbed to the adsorption site; (b) supplying a purge gas to the concave structure; and (c) supplying the source gas to the concave structure at a rate slower than the adsorption rate.

Abstract: There is provided a technique that includes forming a film on at least one substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) performing a first set a number of times, the first set including non-simultaneously performing: supplying a precursor to the at least one substrate from at least one first ejecting hole of a first nozzle arranged along a substrate arrangement direction of a substrate arrangement region where the at least one substrate is arranged; and supplying a reactant to the at least one substrate; and (b) performing a second set a number of times, the second set including non-simultaneously performing: supplying the precursor to the at least one substrate from at least one second ejecting hole of a second nozzle arranged along the substrate arrangement direction of the substrate arrangement region; and supplying the reactant to the at least one substrate.

Abstract: According to the present disclosure, the step coverage performance of the film can be improved on the substrate. According to one embodiment of the present disclosure, there is provided a technique that includes: forming a film on a substrate provided with a concave structure on a surface thereof by performing a cycle a predetermined number of times, wherein the cycle includes: (a) supplying a source gas to the substrate from a side of the substrate; and (b) supplying a reactive gas to the substrate, and wherein, in (a), by colliding the source gas with an inner wall of the concave structure, the source gas is decomposed to generate an intermediate substance and the intermediate substance adheres to the inner wall of the concave structure, and wherein, in (b), the intermediate substance adhered to the inner wall of the concave structure reacts with the reactive gas.

Abstract: There is provided a technique that includes forming a film on at least one substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) performing a first set a number of times, the first set including non-simultaneously performing: supplying a precursor to the at least one substrate from at least one first ejecting hole of a first nozzle arranged along a substrate arrangement direction of a substrate arrangement region where the at least one substrate is arranged; and supplying a reactant to the at least one substrate; and (b) performing a second set a number of times, the second set including non-simultaneously performing: supplying the precursor to the at least one substrate from at least one second ejecting hole of a second nozzle arranged along the substrate arrangement direction of the substrate arrangement region; and supplying the reactant to the at least one substrate.

Abstract: According to one aspect of the technique of the present disclosure, there is provided a substrate processing method including: accommodating a substrate retainer in a process chamber, including: a substrate support; and a partition plate support capable of supporting an upper partition plate provided above a substrate supported by the substrate support; setting a distance between the substrate and the upper partition plate to a first gap; supplying a first gas to the substrate through a gas supply port in a state where the distance between the substrate and the upper partition plate is maintained at the first gap; setting the distance between the substrate and the upper partition plate to a second gap; and supplying a second gas to the substrate through the gas supply port in a state where the distance between the substrate and the upper partition plate is maintained at the second gap.

Abstract: There is provided a technique capable of improving a step coverage performance of a film formed on a substrate. According to one aspect thereof, there is provided a substrate processing method including: (a1) supplying a first process gas such that a transfer velocity of the first process gas toward an edge region of a substrate is faster than the transfer velocity of the first process gas toward a central region of the substrate; (a2) supplying a second process gas such that a transfer velocity of the second process gas toward the central region of the substrate is faster than the transfer velocity of the second process gas toward the edge region of the substrate; and (b) supplying a reactive gas toward the substrate.

Abstract: There is included (a) modifying a film formed on a substrate in a process chamber set at a first pressure by supplying a gas containing hydrogen and oxygen to the film; (b) purging an interior of the process chamber by supplying an inert gas into the process chamber and exhausting the interior of the process chamber, at a second pressure at which the gas containing hydrogen and oxygen remaining in the process chamber after performing (a) is maintained in a gaseous state; and (c) vacuuming the interior of the process chamber so as to reduce a pressure of the interior of the process chamber after performing (b) to a third pressure lower than the second pressure.

Abstract: There is provided a technique that includes forming a film on at least one substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) performing a first set a number of times, the first set including non-simultaneously performing: supplying a precursor to the at least one substrate from at least one first ejecting hole of a first nozzle arranged along a substrate arrangement direction of a substrate arrangement region where the at least one substrate is arranged; and supplying a reactant to the at least one substrate; and (b) performing a second set a number of times, the second set including non-simultaneously performing: supplying the precursor to the at least one substrate from at least one second ejecting hole of a second nozzle arranged along the substrate arrangement direction of the substrate arrangement region; and supplying the reactant to the at least one substrate.

Abstract: A method of manufacturing a semiconductor device, includes forming a film containing a predetermined element on a substrate by supplying a precursor containing the predetermined element to the substrate having a first temperature in a process chamber, changing a temperature of the substrate to a second temperature higher than the first temperature under an atmosphere containing a first oxygen-containing gas in the process chamber, and oxidizing the film while maintaining the temperature of the substrate at the second temperature under an atmosphere containing a second oxygen-containing gas in the process chamber.

Abstract: A technique capable of controlling a film thickness distribution formed on a surface of a substrate includes: forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a source to the substrate accommodated in a process chamber; (b) exhausting the source from the process chamber; (c) supplying a reactant to the substrate accommodated in the process chamber; and (d) exhausting the reactant from the process chamber, wherein (a) through (d) are performed non-simultaneously, and the cycle further includes at least one of: (e) starting a next step with the source remaining in a center portion of a substrate surface after a first predetermined time elapses from a start of (b); and (f) starting a next step with the reactant remaining in the center portion of the substrate's surface after a second predetermined time elapses from a start of (d).

Abstract: A method of manufacturing a semiconductor device, includes forming a film containing a predetermined element on a substrate by supplying a precursor containing the predetermined element to the substrate having a first temperature in a process chamber, changing a temperature of the substrate to a second temperature higher than the first temperature under an atmosphere containing a first oxygen-containing gas in the process chamber, and oxidizing the film while maintaining the temperature of the substrate at the second temperature under an atmosphere containing a second oxygen-containing gas in the process chamber.