Abstract: A transmitting terminal can transmit a content held by itself to a specific receiving terminal having no email software as if using a mailer. The transmitting terminal (10) and the receiving terminal (20) are connected to a delivery server (30) via a network (4). The delivery server (30) comprises: a database (36) for registering the device ID that specifies the receiving terminal (20); a content storage (39) for temporarily storing a content transmitted from the transmitting terminal (10); and table (33, 37) for managing contents separately on a per device ID basis of the receiving terminal. The delivery server (30), when receiving a request from the receiving terminal (20), refers to the tables (33, 27) and transmits to the receiving terminal (20) a content, the transmission destination of which corresponds to the device ID of the receiving terminal (20).

Abstract: Techniques are disclosed for enhancing the dielectric breakdown performance of integrated circuit (IC) interconnects. The disclosed techniques can be used to selectively etch the dielectric layer of an IC to form a recess, for example, between a given pair of adjacent/neighboring interconnects (e.g., metal lines). Thereafter, a layer of dielectric material of higher dielectric breakdown field (Ec) than the surrounding/underlying dielectric material (or other suitable insulator, as will be apparent in light of this disclosure) may be deposited/grown so as to substantially conform to the topology provided by the adjacent/neighboring interconnects and etched recess. In some cases, this dielectric layer may help to prevent or otherwise reduce: (1) dielectric breakdown between the adjacent/neighboring interconnects by locally increasing the dielectric breakdown voltage (VBD); and/or (2) diffusion of the interconnect fill metal into the surrounding/underlying dielectric material.

Abstract: Techniques are disclosed for enhancing the dielectric breakdown performance of integrated circuit (IC) interconnects. The disclosed techniques can be used to selectively etch the dielectric layer of an IC to form a recess, for example, between a given pair of adjacent/neighboring interconnects (e.g., metal lines). Thereafter, a layer of dielectric material of higher dielectric breakdown field (Ec) than the surrounding/underlying dielectric material (or other suitable insulator, as will be apparent in light of this disclosure) may be deposited/grown so as to substantially conform to the topology provided by the adjacent/neighboring interconnects and etched recess. In some cases, this dielectric layer may help to prevent or otherwise reduce: (1) dielectric breakdown between the adjacent/neighboring interconnects by locally increasing the dielectric breakdown voltage (VBD); and/or (2) diffusion of the interconnect fill metal into the surrounding/underlying dielectric material.