Abstract: An imaging system includes an image sensor and a mechanical shutter which controls the termination of exposure of the image sensor. The image sensor includes a pixel array in which a plurality of pixels are arrayed in a matrix, and a vertical scanning unit which scans the pixel array for each row. The vertical scanning unit parallelly executes some of the reset operations of pixels on at least two adjacent rows of the pixel array. The charge accumulation operation of pixels starts upon completion of the reset operation and terminates in response to light shielding by the mechanical shutter.

Abstract: An image pickup device includes pixels each including a photoelectric conversion unit and a transfer switch for transferring a photoelectric conversion signal generated by the photoelectric conversion unit, and a driver for applying a pulse to the transfer switch a plurality of times when the signal generated by the photoelectric conversion unit is transferred via the transfer switch.

Abstract: A solid-state image sensing device comprises a first readout circuit configured to read out a signal from a pixel array including a plurality of pixels, a signal holding unit configured to hold the signal read out from the first readout circuit, a second readout circuit configured to read out the signal held in the signal holding unit, and a current control unit configured to control an electric current flowing through at least part of the first readout circuit while the first readout circuit reads out the signal. The current control unit controls an electric current flowing through the at least part of the first readout circuit in a moving image capturing mode to be smaller than an electric current flowing through the at least part of the first readout circuit in a still image capturing mode.

Abstract: An image pickup apparatus comprising: a plurality of pixels each including a photoelectric converting element; a plurality of capacitor which receive signals from the plurality of pixels at first terminals; a plurality of clamping switches for setting a second terminal of each of the plurality of capacitor into a predetermined electric potential; a plurality of first storing units for storing signals from the second terminals of the plurality of capacitor; a plurality of second storing units for storing the signals from the second terminals of the plurality of capacitor; a first common output line to which the signals from the plurality of first storing units are sequentially output; a second common output line to which the signals from the plurality of second storing units are sequentially output; and a difference circuit for operating a difference between the signal from the first common output line and the signal from the second common output line.

Abstract: A signal processing device is provided which is capable of suppressing a voltage change of a power supply when output signals from a plurality of signal sources are read, and capable of outputting a stable signal at a high sensitivity, and an image pickup apparatus using such a signal processing device is also provided. The signal processing device has: a plurality of terminals connectable to a plurality of signal sources; and a read circuit for converting signals input from the terminals into serial signals and outputting the serial signals, wherein: the read circuit comprises a holding capacitor connected to each of the terminals, a transfer switch for transferring a signal held in the holding capacitor to a common signal line, and a shift register for driving the transfer switch; and a semiconductor layer under the common signal line has a conductivity type opposite to a first conductivity type of a semiconductor substrate.

Abstract: An image capture device includes a plurality of image capture elements for capturing an object image, a plurality of vertical output lines for reading signals out of the plurality of image capture elements, and a plurality of processing circuits. Each processing circuit includes a first capacitor element having a first electrode connected to one of the plurality of vertical output lines, a differential amplifier having a first input terminal connected to a second electrode of the first capacitor element, a second capacitor element connected between the first input terminal and an output terminal of the differential amplifier, and a first switch configured to control conduction between the first input terminal and the output terminal of the differential amplifier.

Abstract: The present invention inhibits variations in sensitivity of an image pickup element formed in a jointed area in the image pickup element produced using exposure in a joined fashion. The image pickup element 11 has a light receiving area 102 formed on a substrate 101, an insulation layer 104 deposited on a light receiving area 102, and a microlens 106 formed on the insulation layer 104 and collecting incident light onto the light receiving area 102. A pattern 103L and a pattern 103R with an optical axis of the microlens 106 as a divisional line by exposure in a joined fashion in different exposure steps are arranged with an optical path for incident light collected by the microlens 106 held therebetween, and are provided so that a clearance from the optical path equals a distance L. The distance L is set to be larger than the alignment accuracy of an exposure device exposing the patterns 103L and 103R.

Abstract: An image pickup apparatus providing improved picture quality by use of correction data to correct for noise signals generated by clamping circuits. A plurality of pixels each including a photoelectric converting element is provided along with a plurality of capacitors which receive signals from the pixels at first terminals. A plurality of clamping switches set a second terminal of each of the plurality of capacitors to a predetermined electric potential, and a plurality of first storing units store signals from the second terminals of the plurality of capacitors. A plurality of second storing units store the signals from the second terminals of the capacitors, and a first common output line sequentially outputs the signals from the plurality of first storing units.

Abstract: There is provided an image pickup apparatus including a pixel including a photoelectric conversion element and an amplification element for amplifying and outputting a signal generated at the photoelectric conversion element, a load transistor for controlling an electric current flowing at the amplification element, and a potential control element for suppressing potential fluctuation in a first main electrode region of the load transistor which is an output side of the amplification element.

Abstract: An image pickup apparatus including: a plurality of photoelectric conversion elements for photoelectrically converting light from an object, a first output line to which signals from the plurality of photoelectric conversion elements are successively outputted, a plurality of first switches connected to the first output line to output the signals from the plurality of photoelectric conversion elements to the first output line, a second output line to which a reference signal is supplied, a plurality of second switches connected to the second output line to supply the reference signal to the second output line, a scanning circuit which controls the plurality of first switches and the plurality of second switches, and a differential circuit which obtains a difference between the signal from the first output line and the signal from the second output line.

Abstract: This invention discloses a photoelectric conversion device. The photoelectric conversion device includes a pixel array in which a plurality of pixels are arrayed in a row direction and a column direction, a plurality of readout circuits which read out signals from pixels for respective columns in the pixel array, and a control unit which controls the plurality of readout circuits, wherein each of the plurality of readout circuits includes a holding unit which holds a reference voltage supplied from an external power source, an operational amplification unit which amplifies the signals from the pixels for each column based on the reference voltage held in the holding unit, and a disconnection unit which electrically disconnects the external power source and the holding unit, and the control unit controls the disconnection unit to electrically disconnect the external power source and the holding unit when the operational amplification unit amplifies the signals from the pixels for each column.

Abstract: A photoelectric conversion device includes a pixel output line, a pixel which outputs a signal to the pixel output line, an amplifier unit which amplifies the signal output to the pixel output line, and a holding capacitor which holds the signal output from the amplifier unit. The photoelectric conversion device outputs a pixel signal based on the signal held by the holding capacitor. The amplifier unit includes a variable amplifier stage which amplifies a signal output to the pixel output line at a gain selected from a plurality of gains, and a buffer stage which amplifies the signal output from the variable amplifier stage, the amplified signal being held by the holding capacitor to hold the signal.

Abstract: There is provided an image pickup apparatus including a pixel including a photoelectric conversion element and an amplification element for amplifying and outputting a signal generated at the photoelectric conversion element, a load transistor for controlling an electric current flowing at the amplification element, and a potential control element for suppressing potential fluctuation in a first main electrode region of the load transistor which is an output side of the amplification element.

Abstract: MOS-type solid-state image pickup device includes a photoelectric conversion unit having a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type forming a pn-junction with the first semiconductor region, a third semiconductor region of the first conductivity type disposed at a light incident side of the second semiconductor region, and a transfer MOS transistor having the second semiconductor region, a fourth semiconductor region of the second conductivity type, and a gate electrode disposed on an insulating film on the first semiconductor region between the photoelectric conversion unit and the fourth semiconductor region to transfer a charge carrier from the second semiconductor region to the fourth semiconductor region. The photoelectric conversion unit and the transfer MOS transistor are disposed on a substrate.

Abstract: The present invention inhibits variations in sensitivity of an image pickup element formed in a jointed area in the image pickup element produced using exposure in a joined fashion. The image pickup element 11 has a light receiving area 102 formed on a substrate 101, an insulation layer 104 deposited on a light receiving area 102, and a microlens 106 formed on the insulation layer 104 and collecting incident light onto the light receiving area 102. A pattern 103L and a pattern 103R with an optical axis of the microlens 106 as a divisional line by exposure in a joined fashion in different exposure steps are arranged with an optical path for incident light collected by the microlens 106 held therebetween, and are provided so that a clearance from the optical path equals a distance L. The distance L is set to be larger than the alignment accuracy of an exposure device exposing the patterns 103L and 103R.

Abstract: An image sensor includes a plurality of operation circuits. The operation circuit operates pixel signals read out from a group of pixels included in a readout area to generate a pixel signal in the thinning readout mode. A plurality of column selecting switches are arranged between the output terminals of the plurality of operation circuits and a plurality of output channels. A control circuit controls the plurality of column selecting switches such that pixel signals the number of which is equal to the number of the plurality of output channels are output to the plurality of output channels in parallel in the thinning readout mode. The circuit arrangements, each included in the corresponding one of the plurality of operation circuits and each viewed from the corresponding one of the column selecting switches used in the thinning readout mode, are equivalent to each other.

Abstract: An image sensor has a plurality of pixels arrayed to form a plurality of columns. The sensor includes a plurality of readout circuits which generate pixel signals based on signals supplied from the pixels of respective columns, a plurality of output channels, a plurality of column selecting switches, and a control circuit which controls the plurality of column selecting switches. The control circuit controls the plurality of column selecting switches so as to output the pixel signals of target readout pixels to output channels selected based on a selection rule in the spatial order of the pixels in the full pixel readout mode. The control circuit controls the plurality of column selecting switches so as to output the thinned-out pixel signals of target readout areas to output channels selected based on the same rule as the selection rule in the spatial order of the areas in the thinning readout mode.

Abstract: A method of manufacturing a MOS-type solid-state image pickup device having a photoelectric conversion unit, a transfer MOS transistor, a gate electrode disposed on an insulating film and a semiconductor substrate on which the photoelectric conversion unit and the transfer MOS transistor are disposed, includes a first step of forming a second semiconductor region by ion implanting an impurity of a second conductivity type at a first angle with a first energy using the gate electrode as a mask, and a second step of forming a fifth semiconductor region by ion implanting an impurity of the second conductivity type at a second angle with a second energy using the gate electrode as a mask. A fourth semiconductor region is formed by ion implanting an impurity of the second conductivity type.

Abstract: An image pickup apparatus of the present invention includes a plurality of photoelectric conversion elements disposed on a semiconductor substrate, a multi-layer wiring structure including a plurality of interlayer insulation films disposed above the semiconductor substrate, and a passiation layer disposed above the multi-layer wiring structure. A first insulation layer is disposed below the under surface of the passiation layer; a second insulation layer is disposed above the top surface of the passiation layer; and the refractive indices of the passiation layer and the first insulation layer differ from each other, and the refractive indices of the passiation layer and the second insulation layer differ from each other. Moreover, planarization processing is performed to at least one layer of the interlayer insulation films and the first insulation layer.

Abstract: A primary object of the present invention is to provide a photoelectric conversion apparatus with less leak current in a floating diffusion region. In order to obtain the above object, a photoelectric conversion apparatus according to the present invention includes a photodiode for converting light into a signal charge, a first semiconductor region having a first conductivity type, a floating diffusion region formed from a second semiconductor region having a second conductivity type for converting the signal charge generated by the photodiode into a signal voltage, the second semiconductor region being formed in the first semiconductor region, and an electrode formed above the first semiconductor region through an insulating film and having an effect of increasing a concentration of majority carriers in the first semiconductor region, in which the electrode is not formed above a depletion region formed from the second semiconductor region.