Abstract: A gas introduction structure extends in a longitudinal direction of a processing container having a substantially cylindrical shape to supply gas into the processing container. The gas introduction structure includes an introduction section that partitions an introduction chamber, an ejection section that partitions a plurality of ejection chambers each including a plurality of gas holes through which the gas is ejected into the processing container, and a branch section that partitions a branch chamber connected to the introduction chamber. The branch chamber is branched to correspond to the number of ejection chambers in a tournament manner and connected to the ejection chambers.

Abstract: A processing apparatus includes: a processing container having a substantially cylindrical shape; a gas nozzle extending in a longitudinal direction of the processing container along an inside of a side wall of the processing container; an exhaust body formed on the side wall on an opposite side of the processing container to face the processing gas nozzle; and an adjustment gas nozzle configured to eject a concentration adjustment gas toward a center of the processing container. The adjustment gas nozzle is provided within an angle range in which the exhaust body is formed at a central angle with reference to the center of the processing container in a plan view from the longitudinal direction.

Abstract: A vertical heat treatment apparatus includes: a substrate holder including a column, substrate holding parts configured to hold the substrates, and gas flow guide parts installed in the column in a corresponding relationship with the substrates; an elevator stand configured to support the substrate holder and to load the substrate holder into the reaction vessel from below the reaction vessel; a rotating mechanism installed in the elevator stand and configured to rotate the substrate holder about a vertical axis; a process gas supply port and an exhaust port respectively formed at a rear side and a front side of a substrate holding region; and a plurality of baffle parts installed independently of the substrate holder so that the baffle parts protrude from the outside toward spaces between the gas flow guide parts adjoining each other and run into the spaces.

Abstract: A gas introduction structure extends in a longitudinal direction of a processing container having a substantially cylindrical shape to supply gas into the processing container. The gas introduction structure includes an introduction section that partitions an introduction chamber, an ejection section that partitions a plurality of ejection chambers each including a plurality of gas holes through which the gas is ejected into the processing container, and a branch section that partitions a branch chamber connected to the introduction chamber. The branch chamber is branched to correspond to the number of ejection chambers in a tournament manner and connected to the ejection chambers.

Abstract: A processing apparatus includes: a processing container having a substantially cylindrical shape and provided with an exhaust slit on a side wall; and a plurality of gas nozzles extending in a vertical direction along an inside of the side wall of the processing container, disposed symmetrically with respect to a straight line connecting a center of the processing container and a center of the exhaust slit, and each configured to eject a same processing gas into the processing container.

Abstract: A processing apparatus includes a processing container that has substantially a cylindrical shape and accommodates a plurality of substrates in multiple tiers at intervals in the longitudinal direction of the processing container; and a gas nozzle that extends in the longitudinal direction of the processing container and has a plurality of gas holes provided at intervals in a longitudinal direction of the gas nozzle to eject a gas into the processing container. The gas holes are arranged every other tier of the plurality of substrates accommodated in multiple tiers, and the gas holes eject the gas toward the side surfaces of the corresponding substrates.

Abstract: A processing apparatus includes: a processing container having a substantially cylindrical shape; a gas nozzle extending in a longitudinal direction of the processing container along an inside of a side wall of the processing container; an exhaust body formed on the side wall on an opposite side of the processing container to face the processing gas nozzle; and an adjustment gas nozzle configured to eject a concentration adjustment gas toward a center of the processing container. The adjustment gas nozzle is provided within an angle range in which the exhaust body is formed at a central angle with reference to the center of the processing container in a plan view from the longitudinal direction.

Abstract: A vertical heat treatment apparatus includes: a substrate holder including a column, substrate holding parts configured to hold the substrates, and gas flow guide parts installed in the column in a corresponding relationship with the substrates; an elevator stand configured to support the substrate holder and to load the substrate holder into the reaction vessel from below the reaction vessel; a rotating mechanism installed in the elevator stand and configured to rotate the substrate holder about a vertical axis; a process gas supply port and an exhaust port respectively formed at a rear side and a front side of a substrate holding region; and a plurality of baffle parts installed independently of the substrate holder so that the baffle parts protrude from the outside toward spaces between the gas flow guide parts adjoining each other and run into the spaces.

Abstract: A vertical heat treatment apparatus includes: a substrate holder including a column, substrate holding parts configured to hold the substrates, and gas flow guide parts installed in the column in a corresponding relationship with the substrates; an elevator stand configured to support the substrate holder and to load the substrate holder into the reaction vessel from below the reaction vessel; a rotating mechanism installed in the elevator stand and configured to rotate the substrate holder about a vertical axis; a process gas supply port and an exhaust port respectively formed at a rear side and a front side of a substrate holding region; and a plurality of baffle parts installed independently of the substrate holder so that the baffle parts protrude from the outside toward spaces between the gas flow guide parts adjoining each other and run into the spaces.

Abstract: A method of filling a depression of a workpiece is provided. The method includes forming a first thin film made of a semiconductor material substantially not containing an impurity along a wall surface which defines the depression, forming an epitaxial region conforming to crystals of the semiconductor substrate from the semiconductor material of the first thin film moved toward a bottom of the depression by annealing, etching the first thin film remaining on the wall surface, performing gas phase doping upon the epitaxial region, forming a second thin film made of a semiconductor material substantially not containing an impurity along the wall surface, further forming an epitaxial region from the semiconductor material of the second thin film moved toward the bottom of the depression by annealing, and performing gas phase doping upon the second thin film remaining on the wall surface and the epitaxial region.

Abstract: A method of forming a laminated film includes forming a silicon oxide film on a plurality of target objects loaded in a reaction chamber, and forming a silicon oxynitride film on the plurality of target objects by supplying a silicon source, an oxidizing agent and a nitride agent to the reaction chamber, wherein forming the silicon oxide film and forming the silicon oxynitride film are repeatedly performed for a predetermined number of times on the plurality of target objects to form a laminated film including the silicon oxynitride film and the silicon oxide film.

Abstract: A method of filling a depression of a workpiece is provided. The method includes forming a first thin film made of a semiconductor material substantially not containing an impurity along a wall surface which defines the depression, forming an epitaxial region conforming to crystals of the semiconductor substrate from the semiconductor material of the first thin film moved toward a bottom of the depression by annealing, etching the first thin film remaining on the wall surface, performing gas phase doping upon the epitaxial region, forming a second thin film made of a semiconductor material substantially not containing an impurity along the wall surface, further forming an epitaxial region from the semiconductor material of the second thin film moved toward the bottom of the depression by annealing, and performing gas phase doping upon the second thin film remaining on the wall surface and the epitaxial region.

Abstract: A method of depositing a silicon oxide film and a silicon nitride film includes depositing the silicon oxide film and the silicon nitride film on a substrate, and a gas for forming the silicon nitride film further includes boron.

Abstract: A support member includes: a mounting unit having a first main surface and a second main surface, the first main surface being configured to mount a first object to be processed thereon and the second main surface being configured to mount a second object to be processed thereon; and a wall installed in a part of the outer peripheral portion along the outer periphery of the mounting unit, the wall having a first portion protruding in a vertical direction than the first object to be processed mounted on the first main surface of the mounting unit. The inner peripheral surface of the first portion of the wall is formed in a first shape that allows the first object to be processed to be held by the first portion of the wall.

Abstract: A method of forming a laminated film includes forming a silicon oxide film on a plurality of target objects loaded in a reaction chamber, and forming a silicon oxynitride film on the plurality of target objects by supplying a silicon source, an oxidizing agent and a nitride agent to the reaction chamber, wherein forming the silicon oxide film and forming the silicon oxynitride film are repeatedly performed for a predetermined number of times on the plurality of target objects to form a laminated film including the silicon oxynitride film and the silicon oxide film.

Abstract: A vertical batch-type film forming apparatus includes: a processing chamber collectively performing a film forming process to a plurality of processing targets; a heating device heating the plurality of processing targets; an exhauster evacuating an inside of the processing chamber; an accommodating container accommodating the processing chamber; a gas supply mechanism supplying a gas used in a process into the accommodating container; and a plurality of gas introducing holes provided in a sidewall of the processing chamber. The gas used in a process is supplied into the processing chamber via the gas introducing holes in a parallel flow to processing surfaces of the plurality of processing targets, and a film forming process is collectively performed to the plurality of processing targets without setting the furnace temperature gradient in the processing chamber.

Abstract: A method of depositing a silicon oxide film and a silicon nitride film includes depositing the silicon oxide film and the silicon nitride film on a substrate, and a gas for forming the silicon nitride film further includes boron.