Abstract: According to the present invention, a moving body capable of moving within a preset range of movement acquires an image from the environment surrounding the location of the moving body, and determines entry determination conditions for obtaining a result of an entry determination as to whether or not the moving body is allowed to enter a region identified by the location of the moving body and the image. A management terminal outputs the entry determination conditions and the image to an output device, and receives modification information relating to the entry determination conditions from an input device. A server uses the modification information received by the input device of the management terminal to perform learning, including updating of the entry determination conditions, thereby setting the movement range of the moving body, the movement of which is controlled in accordance with the entry determination result.

Abstract: A container for containing a liquid material for processing a wafer includes: a container body; a divider dividing the interior of the container body and defining compartments fluid-tightly sealed off from each other except for bottom portions of the compartments; gas inlet ports for introducing gas to the respective compartments and gas outlet ports for discharging gas from the respective compartments; and a liquid level sensor provided in one of the compartments for keeping a liquid surface of a liquid material above the bottom portions when the container is in use conditions.

Abstract: A method for controlling flow and concentration of a liquid precursor includes: supplying a carrier gas to a first auto-pressure regulator and outputting therefrom the carrier gas at a first pressure to a precursor reservoir; outputting the mixture of the vaporized precursor and the carrier gas from the precursor reservoir; and supplying the mixture to a second auto-pressure regulator and outputting therefrom the mixture at a second pressure to a reactor via an orifice.

Abstract: A method for controlling flow and concentration of a liquid precursor includes: supplying a carrier gas to a first auto-pressure regulator and outputting therefrom the carrier gas at a first pressure to a precursor reservoir; outputting the mixture of the vaporized precursor and the carrier gas from the precursor reservoir; and supplying the mixture to a second auto-pressure regulator and outputting therefrom the mixture at a second pressure to a reactor via an orifice.

Abstract: A tandem type semiconductor-processing apparatus includes: a processing section including multiple units arranged in tandem, each of which unit includes a reaction chamber and a load lock chamber with an load lock interface; a FOUP section including at least one FOUP having a wafer cassette and a front opening interface; and a mini-environment section having a single interior connected to the processing section via each load lock interface on one side of the mini-environment section and connected to the FOUP section via each front opening interface on another side of the mini-environment section opposite to the one side.

Abstract: A single-wafer-processing type CVD apparatus for forming a thin film on an object to be processed includes a reaction chamber, a susceptor for placing the object thereon, a shower plate for emitting a jet of reaction gas to the object, which is set up in parallel and opposing to the susceptor, an orifice for bringing a liquid raw material and a carrier gas into the reaction chamber, which is formed through the ceiling of the reaction chamber, an evaporation plate means for vaporizing the liquid raw material, which is set up in a space between the ceiling of the reaction chamber and the shower plate, and a temperature controlling mechanism for controlling the shower plate and the evaporation plate means at respective given temperatures.

Abstract: A single-wafer-processing type CVD apparatus for forming a thin film on an object to be processed includes a reaction chamber, a susceptor for placing the object thereon, a shower plate for emitting a jet of reaction gas to the object, which is set up in parallel and opposing to the susceptor, an orifice for bringing a liquid raw material and a carrier gas into the reaction chamber, which is formed through the ceiling of the reaction chamber, an evaporation plate means for vaporizing the liquid raw material, which is set up in a space between the ceiling of the reaction chamber and the shower plate, and a temperature controlling mechanism for controlling the shower plate and the evaporation plate means at respective given temperatures.