Abstract: To provide a pneumatic tire in which both low rolling resistance and improvement of noise performance at high-speed driving are sufficiently achieved, it is provided a pneumatic tire having a tread portion and a belt layer, wherein the tread portion is arranged on the outer side of the belt layer in the tire radial direction, the reinforcing cord in the belt layer is composed of cords made of monofilaments in which 50 lines/5 cm or more of the monofilaments are arranged in the tire width direction in the tire radial cross section of the belt layer, and the maximum load capacity of the tire WL (kg) and the weight of the tire WT (kg) satisfy 0.0145?(WT/WL).

Abstract: To provide a pneumatic tire excellent in steering stability and durability at high-speed driving, it is provided a pneumatic tire having a tread portion and a belt layer, wherein the tread portion is arranged on the outer side of the belt layer in the tire radial direction, the reinforcing cord in the belt layer is composed of cords made of monofilaments in which 50/5 cm or more of the monofilaments are arranged in the tire width direction in the tire radial cross section of the belt layer, and the maximum load capacity of the tire WL (kg) and the weight of the tire WT (kg) satisfy (WT/WL)?0.0140.

Abstract: An image forming apparatus includes a heating rotary member, a pressure rotary member, a nip portion formed by the rotary members, a temperature adjustment control section controlling a temperature of the heating rotary member to a target temperature, a cleaning web removing toner adhering to the heating rotary member, and a controller selectively executing one of a cleaning mode and a non-cleaning mode. A first basis weight and a second basis weight greater than the first predetermined basis weight are set, in a job that mixedly uses recording media with the first and second basis weights. When the controller executes the non-cleaning mode, the temperature adjustment control section sets a target temperature of a recording medium with a basis weight less than or equal to the first basis weight to a temperature lower than a target temperature of the recording medium in the cleaning mode.

Abstract: An image forming apparatus is disclosed. A fixing device includes a heating rotary member and a pressing rotary member. The fixing device further includes an acquisition means that acquires information about a printing medium for a predetermined number of sheets beforehand, and a temperature control means that controls a temperature of the heating rotary member based on the information about a basis weight acquired by the acquisition means. A job in which different basis weights are mixed is a mixed job. In a case where the mixed job is executed and the temperature of the heating rotary member is changed while the mixed job is executed, a change amount of the temperature of the heating rotary member is reduced based on the information about the basis weight of the printing medium acquired by the acquisition means.

Abstract: A semiconductor memory device includes a first electrode and a second electrode, a phase change layer disposed between the first electrode and the second electrode, and a first layer disposed between the first electrode and the phase change layer. The phase change layer contains at least one of germanium (Ge), antimony (Sb), and tellurium (Te). The first layer contains aluminum (Al) and antimony (Sb), or tellurium (Te) and at least one of zinc (Zn), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and lutetium (Lu).

Abstract: A semiconductor storage device including a phase change memory film having a composition containing at least Ge, Sb, Te, and Se, and containing Se as a design composition ratio to Te in a composition ratio showing a phase change memory property with at least three elements Ge, Sb, and Te. The composition ratio of Se is 33.6 atom % or less.

Abstract: A resistance change device of an embodiment includes a first electrode, a second electrode, and a layer disposed between the first electrode and the second electrode and containing a resistance change material. In the resistance change device of the embodiment, the resistance change material contains: a first element including Sb and Te; a second element including at least one element selected from the group consisting of Ge and In; a third element including at least one element selected from the group consisting of Si, N, B, C, Al, and Ti; and a fourth element including at least one element selected from the group consisting of Sc, Y, La, Gd, Zr, and Hf.

Abstract: A semiconductor device includes a first conductive layer extending along a first direction, a semiconductor layer extending along a second direction crossing the first direction, penetrating the first conductive layer, and including an oxide semiconductor, a first insulating layer between the first conductive layer and the semiconductor layer, a second conductive layer provided on one side of the semiconductor layer in the second direction and electrically connected thereto, a third conductive layer provided on the other side of the semiconductor layer in the second direction and electrically connected thereto, an electric conductor extending from the third conductive layer toward the second conductive layer along the semiconductor layer, and a charge storage film between the semiconductor layer and the electric conductor.

Abstract: A resistance variable device of an embodiment includes a stack arranged between a first electrode and a second electrode and including a resistance variable layer and a chalcogen-containing layer. The chalcogen-containing layer contains a material having a composition represented by a general formula: C1xC2yAz, where C1 is at least one element selected from Sc, Y, Zr, and Hf, C2 is at least one element selected from C, Si, Ge, B, Al, Ga, and In, A is at least one element selected from S, Se, and Te, and x, y, and z are numbers representing atomic ratios satisfying 0<x<1, 0<y<1, 0<z<1, and x+y+z=1, and when an oxidation number of the element C1 is set to a, and an oxidation number of the element C2 is set to b, the atomic ratio x of the element C1 satisfies x?(3?(3+b)×y?z)/(3+a).

Abstract: A selector includes a first electrode, a second electrode, and a selector layer provided between the first electrode and the second electrode and contains SixTeyNz. The x, y, and z of the SixTeyNz satisfy 0<x?35, 15?y?50, and 50<z?85, satisfy 0<x?45, 15?y?55, and 40<z?85, or satisfy 0<x?55, 15?y?65, and 30<z?85.

Abstract: A semiconductor device of an embodiment includes an oxide semiconductor layer. The oxide semiconductor layer includes a metal oxide containing at least one first metal element selected from the group consisting of indium and tin and at least one second metal element selected from the group consisting of zinc, gallium, aluminum, tungsten, and silicon. The oxide semiconductor layer includes a first region in which at least one anion element selected from the group consisting of fluorine and chlorine is contained within a range of 1 atomic % or more and less than 8 atomic % in the metal oxide.

Abstract: A terminal includes a conductor connecting part, a terminal connecting part, and a graphene film. When a first metal material and a third metal material forming a conductor of an electric wire have different ionization tendencies, the graphene film is provided to be arranged between a first surface and the conductor of the electric wire when the conductor of the electric wire is electrically connected to the conductor connecting part. When a second metal material and a fourth metal material forming a surface of an opposite terminal have different ionization tendencies, the graphene film is provided to be arranged between a second surface and the surface of the opposite terminal when the opposite terminal is electrically connected to the terminal connecting part.

Abstract: A force detection apparatus includes first and second force sensors each including a force detection device having a force detection axis, a first inertial sensor disposed in the vicinity of the first force sensor and having an inertia detection axis extending along the force detection axis of the first force sensor, and a second inertial sensor disposed in the vicinity of the second force sensor and having an inertia detection axis extending along the force detection axis of the second force sensor.

Abstract: According to the present invention, a maintenance management system includes an acquisition unit, and an output unit. The acquisition unit acquires an actual operation time of a target work machine including a plurality of management units. The output unit outputs maintenance information regarding the maintenance time for at least one management unit among the plurality of management units, by using a virtual operation time, for each management unit, derived from the actual operation time.

Abstract: An image forming apparatus includes a heating rotary member, a pressure rotary member, a nip portion formed by the rotary members, a temperature adjustment control section controlling a temperature of the heating rotary member to a target temperature, a cleaning web removing toner adhering to the heating rotary member, and a controller selectively executing one of a cleaning mode and a non-cleaning mode. A first basis weight and a second basis weight greater than the first predetermined basis weight are set, in a job that mixedly uses recording media with the first and second basis weights. When the controller executes the non-cleaning mode, the temperature adjustment control section sets a target temperature of a recording medium with a basis weight less than or equal to the first basis weight to a temperature lower than a target temperature of the recording medium in the cleaning mode.

Abstract: A horizontal articulated robot includes a base; a first arm coupled to the base and configured to turn around a first axis, a second arm coupled to the first arm and configured to turn around a second axis parallel to the first axis, a third arm coupled to the second arm and configured to turn around a third axis parallel to the first axis and move along the third axis, a supporting section provided in the second arm and configured to support the third arm, and a force detecting section provided between the second arm and the supporting section and configured to detect force applied to the third arm.

Abstract: According to one embodiment, a variable resistance element includes a first electrode, a second electrode, and a variable resistance layer and a tellurium-containing compound layer disposed between the first electrode and the second electrode. The tellurium-containing compound layer contains tellurium, oxygen, and at least one element selected from tin, copper, and bismuth. In some examples, the tellurium-containing compound layer can function as a switching layer in a memory cell structure.

Abstract: A sensor element includes a first reference potential side terminal located between a first signal side terminal and a second signal side terminal along a first axis passing through the first signal side terminal and the second signal side terminal in a plan view from a direction in which a first piezoelectric element and a second piezoelectric element are stacked and a second reference potential side terminal located between the first signal side terminal and the second signal side terminal along the first axis in the plan view from the direction. The first axis is located between the first reference potential side terminal and the second reference potential side terminal in the plain view from the direction.

Abstract: A semiconductor memory device includes a first electrode and a second electrode, a phase change layer disposed between the first electrode and the second electrode, and a first layer disposed between the first electrode and the phase change layer. The phase change layer contains at least one of germanium (Ge), antimony (Sb), and tellurium (Te). The first layer contains aluminum (Al) and antimony (Sb), or tellurium (Te) and at least one of zinc (Zn), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and lutetium (Lu).

Abstract: To provide a pneumatic tire in which both low rolling resistance and improvement of noise performance at high-speed driving are sufficiently achieved, it is provided a pneumatic tire having a tread portion and a belt layer, wherein the tread portion is arranged on the outer side of the belt layer in the tire radial direction, the reinforcing cord in the belt layer is composed of cords made of monofilaments in which 50 lines/5 cm or more of the monofilaments are arranged in the tire width direction in the tire radial cross section of the belt layer, and the maximum load capacity of the tire WL (kg) and the weight of the tire WT (kg) satisfy 0.0145?(WT/WL).