Abstract: A method for manufacturing a rechargeable battery includes forming a mixture layer and an insulating layer on an electrode substrate having an edge extending in a specified direction so that an exposed portion where the electrode substrate is exposed extends between the edge and the insulating layer; pressing the mixture layer; and stretching an extension portion, located between the edge and the mixture layer, and the insulating layer in the specified direction. The stretching includes applying a stress greater than or equal to yield stress of the electrode substrate or greater than or equal to 0.2% proof stress of the electrode substrate and less than tensile strength of the electrode substrate to the extension portion, and applying a stress greater than or equal to yield stress of the insulating layer or greater than or equal to 0.2% proof stress of the insulating layer to the insulating layer.

Abstract: A pulse generation unit generates a driving voltage signal including a pulse signal. A laser oscillation module oscillates a laser beam by carrying out, based on the driving voltage signal, a pulse oscillating operation. When the power command signal has a voltage command value corresponding to a laser power greater than a predetermined laser power during a high period, the pulse generation unit modulates, in a pulsed manner, a voltage value of the high period of the driving voltage signal so as to alternately repeat, for a preset period of time from a rising time of the high period of the driving voltage signal, a high state in which the voltage value is maintained and a low state in which the voltage value is lowered by a predetermined voltage value without being lowered to a voltage value of a low period of the driving voltage signal.

Abstract: There is provided a technique that includes modifying a deposited film, which is formed on an inner surface of a reaction container, into a film including an oxide layer and a nitride layer by performing a cycle a predetermined number of times, the cycle including: (a) oxidizing the deposited film by supplying an oxygen-containing gas into the reaction container and plasma-exciting the oxygen-containing gas; and (b) nitriding the deposited film by supplying a nitrogen-containing gas into the reaction container and plasma-exciting the nitrogen-containing gas.

Abstract: A method of processing a substrate, includes: (a) modifying a surface of the substrate into a first oxide layer by supplying, to the substrate, a reactive species generated by plasma-exciting a first processing gas in which oxygen and hydrogen are contained and a ratio of hydrogen in the oxygen and hydrogen of the first processing gas is a first ratio; and (b) modifying the first oxide layer into a second oxide layer by supplying, to the substrate, a reactive species generated by plasma-exciting a second processing gas in which oxygen is contained and hydrogen is optionally contained and a ratio of hydrogen in the oxygen and hydrogen of the second processing gas is a second ratio smaller than the first ratio.

Abstract: There is provided a technique that includes a process container including a cylindrical portion, a process chamber being formed in the process container and a substrate being arranged in the process chamber; a gas supplier configured to supply a processing gas to the process chamber; an electrode installed in a spiral shape to surround the process container from outside of the cylindrical portion of the process container and supplied with high-frequency power to plasma-excite the processing gas; and a mover configured to be capable of moving the electrode with respect to the process container in a radial direction of the cylindrical portion.

Abstract: A method of manufacturing a semiconductor device includes: (a) generating a reactive species by plasma-exciting a process gas containing oxygen and hydrogen; and (b) supplying the reactive species to a substrate and oxidizing surfaces of a silicon film and a silicon nitride film formed to be exposed respectively on the substrate, wherein a ratio of oxygen and hydrogen contained in the process gas is adjusted such that a ratio of a thickness of a second oxide layer formed by oxidizing the surface of the silicon nitride film to a thickness of a first oxide layer formed by oxidizing the surface of the silicon film in (b) becomes a predetermined thickness ratio.

Abstract: According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: modifying a surface of a substrate into an impurity-containing layer by performing: (a) supplying an impurity-containing gas containing an impurity and a dilution gas into a process chamber in which the substrate is accommodated; (b) plasma-exciting the impurity-containing gas and the dilution gas; and (c) supplying an active species containing the impurity generated by plasma-exciting the impurity-containing gas and the dilution gas to the substrate, wherein a flow rate ratio of the impurity-containing gas to the dilution gas is controlled in (a) such that a partial pressure of the impurity-containing gas in the process chamber is set to a predetermined partial pressure less than a partial pressure at which the impurity-containing gas forms deposits containing a polymer in the process chamber.

Abstract: Described herein is a technique capable of capable of improving characteristics of an oxide film formed on a substrate in a process of modifying the oxide film. According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: modifying an oxide film formed on a substrate by performing: (a) supplying a reactive species containing an element of a rare gas generated by converting a gas containing the rare gas into a plasma state to the oxide film; and (b) after (a), supplying a reactive species containing oxygen generated by converting an oxygen-containing gas different from the gas containing the rare gas into a plasma state to the oxide film.

Abstract: In a method for marking on a surface of a work, kept is a state where an end of a rotating tool for marking is contacted with a surface of the work, and a rotation of the rotating tool is started at the same time when a relative movement of the work in an X-axis direction and/or in a Y-axis direction relative to the rotating tool is started. According to the above marking method, a width of a marked line can be made constant over its entire length.

Abstract: In a method for marking on a surface of a work, kept is a state where an end of a rotating tool for marking is contacted with a surface of the work, and a rotation of the rotating tool is started at the same time when a relative movement of the work in an X-axis direction and/or in a Y-axis direction relative to the rotating tool is started. According to the above marking method, a width of a marked line can be made constant over its entire length.

Abstract: A mobile information-terminal apparatus moves with a user and provides information to the user. A position-information detecting unit receives signals transmitted from a plurality of transmitters installed in a site to respective areas that are allocated to the transmitters, and detects position information based on the received signals. A position-related-information informing unit that informs the user of related information that corresponds to the position information based on the detected position information.

Abstract: A mobile information-terminal apparatus moves with a user and provides information to the user. A position-information detecting unit receives signals transmitted from a plurality of transmitters installed in a site to respective areas that are allocated to the transmitters, and detects position information based on the received signals. A position-related-information informing unit that informs the user of related information that corresponds to the position information based on the detected position information.

Abstract: A system for removing line deterioration elements such as intersymbol interference, carrier frequency offset and phase jitter, etc. from the receiving signal. An automatic equalizing unit compensates for signal deterioration by intersymbol interference. Next, a carrier phase control unit compensates for signal deterioration by carrier frequency offset. Thereafter, a phase jitter interference removing units allows increase of only phase jitter element by utilizing line characteristic to easily extract phase jitter element. Since the signal including phase jitter is a low frequency signal, a phase jitter removing unit further removes phase jitter by shifting the frequency range to a higher frequency range on the frequency axis and then shifting it to the bandwidth for each processing.

Abstract: A system of the transversal type automatic equalizer with a tap coefficient protection in which an inter-symbol interference is prevented. The system includes a summing unit for summing all of the tap powers detected by tap power detecting unit, and a determination unit for comparing the sum produced by the summing unit with a predetermined threshold value, and for producing the output determination of normal when the sum is not more than the threshold value and producing the output determination of abnormal tap coefficient growth when the sum is more than the threshold value.