Patents by Inventor Hiroki Kiyama
Hiroki Kiyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9875919Abstract: A flash heating part in a heat treatment apparatus includes 30 built-in flash lamps, and irradiates a semiconductor wafer held by a holder in a chamber with a flash of light. Thirty switching elements are provided in a one-to-one correspondence with the 30 flash lamps. Each of the switching elements defines the waveform of current flowing through a corresponding one of the flash lamps by intermittently supplying electrical charge thereto. Radiation thermometers measure an in-plane temperature distribution of the semiconductor wafer during flash irradiation. Based on the results of measurement with the radiation thermometers, a controller individually controls the operations of the 30 switching elements to individually define the light emission patterns of the 30 flash lamps.Type: GrantFiled: January 24, 2017Date of Patent: January 23, 2018Assignee: SCREEN Holdings, Co. Ltd.Inventor: Hiroki Kiyama
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Publication number: 20170133247Abstract: A flash heating part in a heat treatment apparatus includes 30 built-in flash lamps, and irradiates a semiconductor wafer held by a holder in a chamber with a flash of light. Thirty switching elements are provided in a one-to-one correspondence with the 30 flash lamps. Each of the switching elements defines the waveform of current flowing through a corresponding one of the flash lamps by intermittently supplying electrical charge thereto. Radiation thermometers measure an in-plane temperature distribution of the semiconductor wafer during flash irradiation. Based on the results of measurement with the radiation thermometers, a controller individually controls the operations of the 30 switching elements to individually define the light emission patterns of the 30 flash lamps.Type: ApplicationFiled: January 24, 2017Publication date: May 11, 2017Inventor: Hiroki KIYAMA
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Patent number: 9607870Abstract: A flash heating part in a heat treatment apparatus includes 30 built-in flash lamps, and irradiates a semiconductor wafer held by a holder in a chamber with a flash of light. Thirty switching elements are provided in a one-to-one correspondence with the 30 flash lamps. Each of the switching elements defines the waveform of current flowing through a corresponding one of the flash lamps by intermittently supplying electrical charge thereto. Radiation thermometers measure an in-plane temperature distribution of the semiconductor wafer during flash irradiation. Based on the results of measurement with the radiation thermometers, a controller individually controls the operations of the 30 switching elements to individually define the light emission patterns of the 30 flash lamps.Type: GrantFiled: December 30, 2013Date of Patent: March 28, 2017Assignee: SCREEN Holdings Co., Ltd.Inventor: Hiroki Kiyama
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Patent number: 9437448Abstract: A hydrofluoric acid is supplied to a surface of a substrate, and a native oxide film formed on the surface is corroded to be removed, exposing silicon in the surface of the substrate. Then, a rinse solution such as alcohols is supplied to the surface of the substrate, and then, the hydrofluoric acid is washed off from the surface. After that, a dopant solution, which is a dopant-containing chemical solution, is supplied to the surface of the substrate. The dopant solution comes into contact with the surface of the substrate, which is not hydrogen-terminated and has silicon exposed, thereby forming a dopant-containing monolayer thin film on the surface in a short period of time.Type: GrantFiled: June 7, 2013Date of Patent: September 6, 2016Assignee: SCREEN Holdings Co., Ltd.Inventor: Hiroki Kiyama
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Publication number: 20150200108Abstract: A hydrofluoric acid is supplied to a surface of a substrate, and a native oxide film formed on the surface is corroded to be removed, exposing silicon in the surface of the substrate. Then, a rinse solution such as alcohols is supplied to the surface of the substrate, and then, the hydrofluoric acid is washed off from the surface. After that, a dopant solution, which is a dopant-containing chemical solution, is supplied to the surface of the substrate. The dopant solution comes into contact with the surface of the substrate, which is not hydrogen-terminated and has silicon exposed, thereby forming a dopant-containing monolayer thin film on the surface in a short period of time.Type: ApplicationFiled: June 7, 2013Publication date: July 16, 2015Applicant: SCREEN Holdings, Co., Ltd.Inventor: Hiroki Kiyama
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Patent number: 8963050Abstract: A semiconductor wafer having a surface with a thin film formed thereon is transported into a chamber and held by a holder. After an atmosphere provided in the chamber is replaced, flashes of light are directed from flash lamps in a light irradiation part toward the semiconductor wafer to perform a baking process on the thin film. The irradiation of the semiconductor wafer with light from halogen lamps in the light irradiation part also starts at the same time as the irradiation thereof with the flashes of light. The flashes of light emitted for an extremely short period of time and having a high intensity allow the surface temperature of the thin film to rise momentarily. This prevents the occurrence of abnormal grain growth resulting from prolonged baking in the film.Type: GrantFiled: October 13, 2011Date of Patent: February 24, 2015Assignee: Dainippon Screen Mfg. Co., Ltd.Inventors: Shinichi Kato, Hiroki Kiyama
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Patent number: 8861944Abstract: In light-irradiation heating with a total irradiation time of one second or less, two-stage irradiation is performed, including a first stage of light irradiation of a semiconductor wafer, which irradiation produces an output waveform that reaches a peak at a given emission output; and a second stage of supplemental light irradiation of the semiconductor wafer, which irradiation is started after the peak, producing an emission output smaller than the above given emission output. The emission output in the second stage is two thirds or less than the above given emission output at the peak. The first-stage light-irradiation time is between 0.1 and 10 milliseconds, and the second-stage light-irradiation time is 5 milliseconds or more. This allows the temperature of the semiconductor wafer even at a somewhat greater depth below the surface to be raised to some extent while allowing the surface temperature to be maintained at a generally constant processing temperature.Type: GrantFiled: October 22, 2012Date of Patent: October 14, 2014Assignee: Dainippon Screen Mfg. Co., Ltd.Inventors: Hiroki Kiyama, Kenichi Yokouchi
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Patent number: 8852966Abstract: A semiconductor wafer, on the surface of which a silicon dioxide base material and an amorphous silicon thin film are formed in this order, is carried into a chamber. An insulated gate bipolar transistor (IGBT) is connected with a power supply circuit to a flash lamp, and the IGBT makes an energization period to the flash lamp to be 0.01 millisecond or more and 1 millisecond or less, consequently making a flash light irradiation time to be 0.01 millisecond or more and 1 millisecond or less. Since a flash heat treatment is performed with a remarkably short flash light irradiation time, the excessive heating of the thin film of amorphous silicon is suppressed and harmful influence such as the exfoliation of the film is prevented.Type: GrantFiled: September 11, 2012Date of Patent: October 7, 2014Assignee: Dainippon Screen Mfg. Co., Ltd.Inventors: Hiroki Kiyama, Kazuhiko Fuse, Shinichi Kato
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Publication number: 20140206108Abstract: A flash heating part in a heat treatment apparatus includes 30 built-in flash lamps, and irradiates a semiconductor wafer held by a holder in a chamber with a flash of light. Thirty switching elements are provided in a one-to-one correspondence with the 30 flash lamps. Each of the switching elements defines the waveform of current flowing through a corresponding one of the flash lamps by intermittently supplying electrical charge thereto. Radiation thermometers measure an in-plane temperature distribution of the semiconductor wafer during flash irradiation. Based on the results of measurement with the radiation thermometers, a controller individually controls the operations of the 30 switching elements to individually define the light emission patterns of the 30 flash lamps.Type: ApplicationFiled: December 30, 2013Publication date: July 24, 2014Applicant: DAINIPPON SCREEN MFG. CO., LTD.Inventor: Hiroki KIYAMA
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Patent number: 8498525Abstract: In light-irradiation heating with a total irradiation time of one second or less, two-stage irradiation is performed, including a first stage of light irradiation of a semiconductor wafer, which irradiation produces an output waveform that reaches a peak at a given emission output; and a second stage of supplemental light irradiation of the semiconductor wafer, which irradiation is started after the peak, producing an emission output smaller than the above given emission output. The emission output in the second stage is two thirds or less than the above given emission output at the peak. The first-stage light-irradiation time is between 0.1 and 10 milliseconds, and the second-stage light-irradiation time is 5 milliseconds or more.Type: GrantFiled: November 10, 2011Date of Patent: July 30, 2013Assignee: Dainippon Screen Mfg. Co., Ltd.Inventors: Hiroki Kiyama, Kenichi Yokouchi
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Publication number: 20130078744Abstract: A semiconductor wafer, on the surface of which a silicon dioxide base material and an amorphous silicon thin film are formed in this order, is carried into a chamber. An insulated gate bipolar transistor (IGBT) is connected with a power supply circuit to a flash lamp, and the IGBT makes an energization period to the flash lamp to be 0.01 millisecond or more and 1 millisecond or less, consequently making a flash light irradiation time to be 0.01 millisecond or more and 1 millisecond or less. Since a flash heat treatment is performed with a remarkably short flash light irradiation time, the excessive heating of the thin film of amorphous silicon is suppressed and harmful influence such as the exfoliation of the film is prevented.Type: ApplicationFiled: September 11, 2012Publication date: March 28, 2013Inventors: Hiroki KIYAMA, Kazuhiko FUSE, Shinichi KATO
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Publication number: 20120114316Abstract: In light-irradiation heating with a total irradiation time of one second or less, two-stage irradiation is performed, including a first stage of light irradiation of a semiconductor wafer, which irradiation produces an output waveform that reaches a peak at a given emission output; and a second stage of supplemental light irradiation of the semiconductor wafer, which irradiation is started after the peak, producing an emission output smaller than the above given emission output. The emission output in the second stage is two thirds or less than the above given emission output at the peak. The first-stage light-irradiation time is between 0.1 and 10 milliseconds, and the second-stage light-irradiation time is 5 milliseconds or more.Type: ApplicationFiled: November 10, 2011Publication date: May 10, 2012Applicant: DAINIPPON SCREEN MFG. CO., LTD.Inventors: Hiroki Kiyama, Kenichi Yokouchi
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Publication number: 20120093492Abstract: A semiconductor wafer having a surface with a thin film formed thereon is transported into a chamber and held by a holder. After an atmosphere provided in the chamber is replaced, flashes of light are directed from flash lamps in a light irradiation part toward the semiconductor wafer to perform a baking process on the thin film. The irradiation of the semiconductor wafer with light from halogen lamps in the light irradiation part also starts at the same time as the irradiation thereof with the flashes of light. The flashes of light emitted for an extremely short period of time and having a high intensity allow the surface temperature of the thin film to rise momentarily. This prevents the occurrence of abnormal grain growth resulting from prolonged baking in the film.Type: ApplicationFiled: October 13, 2011Publication date: April 19, 2012Inventors: Shinichi KATO, Hiroki KIYAMA
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Patent number: 8145046Abstract: In light-irradiation heating with a total irradiation time of one second or less, two-stage irradiation is performed, including a first stage of light irradiation of a semiconductor wafer, which irradiation produces an output waveform that reaches a peak at a given emission output; and a second stage of supplemental light irradiation of the semiconductor wafer, which irradiation is started after the peak, producing an emission output smaller than the above given emission output. The emission output in the second stage is two thirds or less than the above given emission output at the peak. The first-stage light-irradiation time is between 0.1 and 10 milliseconds, and the second-stage light-irradiation time is 5 milliseconds or more. This allows the temperature of the semiconductor wafer even at a somewhat greater depth below the surface to be raised to some extent while allowing the surface temperature to be maintained at a generally constant processing temperature.Type: GrantFiled: April 10, 2009Date of Patent: March 27, 2012Assignee: Dainippon Screen Mfg. Co., Ltd.Inventors: Hiroki Kiyama, Kenichi Yokouchi
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Patent number: 8041198Abstract: In photo-irradiation heating with a total photo-irradiation time of one second or less, after initial photo-irradiation of a semiconductor wafer is performed while increasing an emission output to a target value, succeeding photo-irradiation of the semiconductor wafer is performed while maintaining the emission output within a range of plus or minus 20% from the target value. The photo-irradiation time for the initial photo-irradiation ranges from 0.1 to 10 milliseconds, and the photo-irradiation time for the succeeding photo-irradiation ranges from 5 milliseconds to less than one second. This allows the temperature of the semiconductor wafer even at a somewhat greater depth below the surface to be raised to some extent while allowing the surface temperature to be maintained at a generally constant processing temperature, thus achieving both the activation of implanted ions and the repair of introduced defects without any thermal damage to the semiconductor wafer.Type: GrantFiled: April 15, 2009Date of Patent: October 18, 2011Assignee: Dainippon Screen Mfg.Co., Ltd.Inventors: Hiroki Kiyama, Kenichi Yokouchi
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Publication number: 20090285568Abstract: In photo-irradiation heating with a total photo-irradiation time of one second or less, after initial photo-irradiation of a semiconductor wafer is performed while increasing an emission output to a target value, succeeding photo-irradiation of the semiconductor wafer is performed while maintaining the emission output within a range of plus or minus 20% from the target value. The photo-irradiation time for the initial photo-irradiation ranges from 0.1 to 10 milliseconds, and the photo-irradiation time for the succeeding photo-irradiation ranges from 5 milliseconds to less than one second. This allows the temperature of the semiconductor wafer even at a somewhat greater depth below the surface to be raised to some extent while allowing the surface temperature to be maintained at a generally constant processing temperature, thus achieving both the activation of implanted ions and the repair of introduced defects without any thermal damage to the semiconductor wafer.Type: ApplicationFiled: April 15, 2009Publication date: November 19, 2009Inventors: Hiroki KIYAMA, Kenichi YOKOUCHI
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Publication number: 20090263112Abstract: In light-irradiation heating with a total irradiation time of one second or less, two-stage irradiation is performed, including a first stage of light irradiation of a semiconductor wafer, which irradiation produces an output waveform that reaches a peak at a given emission output; and a second stage of supplemental light irradiation of the semiconductor wafer, which irradiation is started after the peak, producing an emission output smaller than the above given emission output. The emission output in the second stage is two thirds or less than the above given emission output at the peak. The first-stage light-irradiation time is between 0.1 and 10 milliseconds, and the second-stage light-irradiation time is 5 milliseconds or more. This allows the temperature of the semiconductor wafer even at a somewhat greater depth below the surface to be raised to some extent while allowing the surface temperature to be maintained at a generally constant processing temperature.Type: ApplicationFiled: April 10, 2009Publication date: October 22, 2009Inventors: Hiroki Kiyama, Kenichi Yokouchi
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Publication number: 20060291835Abstract: A susceptor for holding a semiconductor wafer when flash heating is performed by exposing the semiconductor wafer to a flash of light from flash lamps is formed with a recessed portion of a concave configuration having an outer diameter greater than the diameter of the semiconductor wafer, as seen in plan view. When the susceptor is viewed from above, the concave configuration of the recessed portion is greater in plan view size than the semiconductor wafer. The susceptor formed with the recessed portion holds the semiconductor wafer in such a manner that an inner wall surface of the recessed portion supports a peripheral portion of the semiconductor wafer. As a result, a gap filled with a layer of gas is formed between the lower surface of the semiconductor wafer and the upper surface of the susceptor, to prevent a crack in the semiconductor wafer when the semiconductor wafer is exposed to a flash of light from the flash lamps.Type: ApplicationFiled: June 23, 2006Publication date: December 28, 2006Inventors: Yoshihide Nozaki, Hideo Nishihara, Hiroki Kiyama