Abstract: A production apparatus capable of suppressing the generation of rusts on a base material gripper and a rotation mechanism is provided in a production of a porous glass preform. In an apparatus for producing a porous glass preform by depositing glass fine particles, produced by a flame hydrolysis reaction using a burner, on a starting member gripped by a base material gripper in a reaction vessel, the base material gripper is covered with a cover, and gas is supplied to the inside of the cover and the gas is caused to flow from the inside of the cover to an inside of the reaction vessel.

Abstract: A semiconductor device has a semiconductor substrate; a shielding element formed by a conductor on a top side of the semiconductor substrate; an active element formed by a conductor and a semiconductor on the top side of the semiconductor substrate; a dielectric layer formed between the shielding element and the active element to electrically isolate the shielding element and the active element. The shielding element includes a first conductor layer formed as a flat plate, and a first external contact that is formed on the top side of the first conductor layer and is connected to the first conductor layer; and the active element includes a second conductor layer that is formed between the semiconductor substrate and the first conductor layer, and is connected to the semiconductor substrate.

Abstract: A variable capacitor element including: a buried electrode layer of a conductivity type different from a semiconductor substrate; a wiring layer connected to the lead portion of the buried electrode layer; a pair of capacitive insulating films that are formed as regions having mutually opposing adjacent sides in a plane shape on a portion of the buried electrode layer excluding the lead portion; an insulator layer formed on the border region of each outside of the pair of capacitive insulating films in a direction perpendicular to the adjacent sides; a pair of conductor layers formed both on the respective capacitive insulating films and on the respective insulator layers; and wiring layers that are connected respectively to lead portions of the pair of conductor layers above the insulator layer. The capacitance value between the buried electrode layer and each of the conductor layers can be changed by changing the voltage between the buried electrode layer and the conductor layers.

Abstract: A variable capacitor element including: a buried electrode layer of a conductivity type different from a semiconductor substrate; a wiring layer connected to the lead portion of the buried electrode layer; a pair of capacitive insulating films that are formed as regions having mutually opposing adjacent sides in a plane shape on a portion of the buried electrode layer excluding the lead portion; an insulator layer formed on the border region of each outside of the pair of capacitive insulating films in a direction perpendicular to the adjacent sides; a pair of conductor layers formed both on the respective capacitive insulating films and on the respective insulator layers; and wiring layers that are connected respectively to lead portions of the pair of conductor layers above the insulator layer. The capacitance value between the buried electrode layer and each of the conductor layers can be changed by changing the voltage between the buried electrode layer and the conductor layers.

Abstract: A frequency synthesizer device comprising a PLL circuit (9) and a frequency-division ratio control circuit (5). The PLL circuit (9) includes a phase comparator (1), a low-pass filter (2), a voltage-controlled oscillator (3), and a variable frequency divider (4). The frequency-division ratio control circuit (5) controls the variable frequency divider (4) such that a frequency division ratio of the variable frequency divider (4) is changed in time and a time average value of the frequency division ratio contains a value below a decimal point. Two different signals of an output signal fdiv of the variable frequency divider (4) and an output fdiv2 obtained via a delay element (10) are used as clocks of an accumulator portion (81) in the frequency-division ratio control circuit (5).

Abstract: A frequency synthesizer device comprising a PLL circuit (9) and a frequency-division ratio control circuit (5). The PLL circuit (9) includes a phase comparator (1), a low-pass filter (2), a voltage-controlled oscillator (3), and a variable frequency divider (4). The frequency-division ratio control circuit (5) controls the variable frequency divider (4) such that a frequency division ratio of the variable frequency divider (4) is changed in time and a time average value of the frequency division ratio contains a value below a decimal point. Two different signals of an output signal fdiv of the variable frequency divider (4) and an output fdiv2 obtained via a delay element (10) are used as clocks of an accumulator portion (81) in the frequency-division ratio control circuit (5).

Abstract: An aluminum-containing metal material for, for example, a heat-exchanger for motorcars is surface-treated by chemically etching an Al-containing metal material surface, forming a first protective layer on the etched surface by a chemical conversion treatment with an aqueous solution of Zr phosphate or Ti phosphate, and coating the first protective layer with a second protective layer containing a hydrophilic resin including non-cross-linked hydrophilic functional groups and at least partially cross-linked reactive functional groups different from the hydrophilic functional groups, to impart high hydrophilicity and resistance to odor generation and corrosion to the aluminum-containing metal material surface.

Abstract: Here are provided a composition for hydrophilic treatment of aluminum or aluminum alloy which can form film having persistent corrosion resistance and hydrophilicity and not generating odor, and a method for hydrophilic treatment.