Abstract: Solutions are disclosed for preventing the settling of an abrasive, while maintaining the polishing performance of a polishing composition. Solutions are disclosed for improving the redispersibility of an abrasive while maintaining the polishing performance. Polishing compositions for use in polishing a semiconductor substrate according to the present disclosure include an abrasive, a layered compound, and a dispersion medium.

Abstract: An object of the present invention is to provide a polishing composition that can achieve both a high polishing removal rate and high surface quality. According to the present invention, provided is a polishing composition for polishing a material to be polished. The polishing composition contains sodium metavanadate, hydrogen peroxide, and silica abrasive. The content C1 of sodium metavanadate is 0.7% to 3.5% by weight, the content C2 of hydrogen peroxide is 0.3% to 3% by weight, and the content C3 of the silica abrasive is 12% to 50% by weight.

Abstract: According to the present invention, there is provided a polishing composition used for polishing a gallium compound-based semiconductor substrate. The polishing composition includes a silica abrasive; a compound Cpho having a phosphoric acid group or a phosphonic acid group; and water. In addition, according to the present invention, there is provided a method for polishing a gallium compound-based semiconductor substrate. The method includes a first polishing step in which polishing is performed using a slurry S1 containing an abrasive A1 and water; and a second polishing step in which polishing is performed using a slurry S2 containing an abrasive A2 and water, in this order. The abrasive A2 contains a silica abrasive. The slurry S2 further contains a compound Cpho having a phosphoric acid group or a phosphonic acid group.

Abstract: An object of the present invention is to provide a polishing composition that can achieve both a high polishing removal rate and high surface quality. According to the present invention, provided is a polishing composition for polishing a material to be polished. The polishing composition contains sodium metavanadate, hydrogen peroxide, and silica abrasive. The content C1 of sodium metavanadate is 0.7% to 3.5% by weight, the content C2 of hydrogen peroxide is 0.3% to 3% by weight, and the content C3 of the silica abrasive is 12% to 50% by weight.

Abstract: An object of the present invention is to provide a polishing composition that can achieve both a high polishing removal rate and high surface quality. According to the present invention, provided is a polishing composition for polishing a material to be polished. The polishing composition contains sodium metavanadate, hydrogen peroxide, and silica abrasive. The content C1 of sodium metavanadate is 0.7% to 3.5% by weight, the content C2 of hydrogen peroxide is 0.3% to 3% by weight, and the content C3 of the silica abrasive is 12% to 50% by weight.

Abstract: According to the present invention, there is provided a polishing composition used for polishing a gallium compound-based semiconductor substrate. The polishing composition includes a silica abrasive; a compound Cpho having a phosphoric acid group or a phosphonic acid group; and water. In addition, according to the present invention, there is provided a method for polishing a gallium compound-based semiconductor substrate. The method includes a first polishing step in which polishing is performed using a slurry S1 containing an abrasive A1 and water; and a second polishing step in which polishing is performed using a slurry S2 containing an abrasive A2 and water, in this order. The abrasive A2 contains a silica abrasive. The slurry S2 further contains a compound Cpho having a phosphoric acid group or a phosphonic acid group.

Abstract: The present invention provides a means capable of polishing an object to be polished at a high polishing removal rate and further improving a surface quality of a surface of the object to be polished. The present invention is a polishing composition used for polishing an object to be polished, containing an alumina abrasive and a dispersion medium, in which the alumina abrasive contain only an ?-alumina A having an ? conversion rate of 80% or more and an ?-alumina B having an ? conversion rate of less than 80% as crystalline alumina, and an average particle size of the ?-alumina A is smaller than an average particle size of the ?-alumina B.

Abstract: The present invention provides a solution for preventing the settling of an abrasive while maintaining the polishing performance. In addition, the present invention provides a solution for improving the redispersibility of an abrasive while maintaining the polishing performance. The present invention relates to a polishing composition for use in polishing a semiconductor substrate, the polishing composition containing an abrasive, a layered compound, and a dispersion medium.

Abstract: An object of the present invention is to provide a polishing composition that can achieve both a high polishing removal rate and high surface quality. According to the present invention, provided is a polishing composition for polishing a material to be polished. The polishing composition contains sodium metavanadate, hydrogen peroxide, and silica abrasive. The content C1 of sodium metavanadate is 0.7% to 3.5% by weight, the content C2 of hydrogen peroxide is 0.3% to 3% by weight, and the content C3 of the silica abrasive is 12% to 50% by weight.

Abstract: The present invention provides a solution for preventing the settling of an abrasive while maintaining the polishing performance. In addition, the present invention provides a solution for improving the redispersibility of an abrasive while maintaining the polishing performance. The present invention relates to a polishing composition for use in polishing a semiconductor substrate, the polishing composition containing an abrasive, a layered compound, and a dispersion medium.

Abstract: The invention provides a novel and non conventional process for producing coated silver fine particles by the so-called amine complex decomposition process, and also provides coated silver fine particles produced by the process. The process includes a first step of forming a complex compound including a silver compound and an alkylamine by mixing (1) a silver compound capable of generating metal silver by thermal decomposition, (2) an alkylamine, and (3) at least one alcoholic compound having a solubility in water and/or a compound having at least one of a carbon-heteroatom multiple bond and a heteroatom-heteroatom multiple bond in the molecule, and a second step of generating silver fine particles coated with a protecting layer including the alkylamine by thermal decomposition of the complex compound.