Abstract: A light-emitting element includes a light-emitting layer, and an optical function film. The light-emitting layer is configured to include a first plane with a first electrode, a second plane with a second electrode, and a circumferential plane connecting the first and second planes, the second plane being opposing to the first plane, and the light-emitting layer being made of a semiconductor. The optical function film is configured to include a reflection layer being able to reflect light coming from the light-emitting layer, the reflection layer being provided with first and second regions, the first region covering the second plane and the circumferential plane, the second region protruding from the first region to an outside of the light-emitting layer to expose an end plane thereof.

Abstract: A light-emitting element wafer includes a supporting substrate, a luminescent layer that is formed of a semiconductor and has a first surface and a second surface, the first surface including a first electrode, the second surface including a second electrode, the second surface being arranged between the supporting substrate and the first surface, a junction layer that joins luminescent layer to the supporting substrate and is arranged between the supporting substrate and the second surface, a first inorganic film formed on the first surface, a second inorganic film formed between the junction layer and the second surface, an isolation trench portion that isolates elements and is formed to have a depth such that the isolation trench portion extends from the first inorganic film to the supporting substrate, and a third inorganic film that connects the first inorganic film and the second inorganic film.

Abstract: A light-emitting element wafer includes a supporting substrate, a luminescent layer that is formed of a semiconductor and has a first surface and a second surface, the first surface including a first electrode, the second surface including a second electrode, the second surface being arranged between the supporting substrate and the first surface, a junction layer that joins luminescent layer to the supporting substrate and is arranged between the supporting substrate and the second surface, a first inorganic film formed on the first surface, a second inorganic film formed between the junction layer and the second surface, an isolation trench portion that isolates elements and is formed to have a depth such that the isolation trench portion extends from the first inorganic film to the supporting substrate, and a third inorganic film that connects the first inorganic film and the second inorganic film.

Abstract: A semiconductor light emitting device including an active layer, a compound semiconductor layer on the active layer, a contact layer on the compound semiconductor layer, and an electrode on the contact layer, where the contact layer is substantially the same size as the electrode.

Abstract: A light-emitting element includes a light-emitting layer, and an optical function film. The light-emitting layer is configured to include a first plane with a first electrode, a second plane with a second electrode, and a circumferential plane connecting the first and second planes, the second plane being opposing to the first plane, and the light-emitting layer being made of a semiconductor. The optical function film is configured to include a reflection layer being able to reflect light coming from the light-emitting layer, the reflection layer being provided with first and second regions, the first region covering the second plane and the circumferential plane, the second region protruding from the first region to an outside of the light-emitting layer to expose an end plane thereof.

Abstract: A light-emitting element includes a light-emitting layer, and an optical function film. The light-emitting layer is configured to include a first plane with a first electrode, a second plane with a second electrode, and a circumferential plane connecting the first and second planes, the second plane being opposing to the first plane, and the light-emitting layer being made of a semiconductor. The optical function film is configured to include a reflection layer being able to reflect light coming from the light-emitting layer, the reflection layer being provided with first and second regions, the first region covering the second plane and the circumferential plane, the second region protruding from the first region to an outside of the light-emitting layer to expose an end plane thereof.

Abstract: A light-emitting element includes a light-emitting layer, and an optical function film. The light-emitting layer is configured to include a first plane with a first electrode, a second plane with a second electrode, and a circumferential plane connecting the first and second planes, the second plane being opposing to the first plane, and the light-emitting layer being made of a semiconductor. The optical function film is configured to include a reflection layer being able to reflect light coming from the light-emitting layer, the reflection layer being provided with first and second regions, the first region covering the second plane and the circumferential plane, the second region protruding from the first region to an outside of the light-emitting layer to expose an end plane thereof.

Abstract: A light-emitting element wafer includes a supporting substrate, a luminescent layer that is formed of a semiconductor and has a first surface and a second surface, the first surface including a first electrode, the second surface including a second electrode, the second surface being arranged between the supporting substrate and the first surface, a junction layer that joins luminescent layer to the supporting substrate and is arranged between the supporting substrate and the second surface, a first inorganic film formed on the first surface, a second inorganic film formed between the junction layer and the second surface, an isolation trench portion that isolates elements and is formed to have a depth such that the isolation trench portion extends from the first inorganic film to the supporting substrate, and a third inorganic film that connects the first inorganic film and the second inorganic film.

Abstract: A semiconductor light emitting device including an active layer, a compound semiconductor layer on the active layer, a contact layer on the compound semiconductor layer, and an electrode on the contact layer, where the contact layer is substantially the same size as the electrode.

Abstract: The invention provides a method of inspecting bacteria by using an outer membrane vesicle of the bacteria, which is useful for easily diagnosing a periodontopathic bacteria with high precision. An outer membrane vesicle of bacteria to be detected is previously arranged in a measuring portion of a measuring appliance, a specimen material collected from a test subject is brought into contact with the measuring portion, and an anti-outer membrane vesicle antibody corresponding to the outer membrane vesicle in the specimen material is detected on the basis of an antigen antibody reaction. A measuring appliance for executing the inspecting method of the bacteria is structured such that the outer membrane vesicle of the bacteria to be detected is previously arranged in the measuring portion.

Abstract: A reception station 1b compares its BSSID with BSSID included in a signal that has arrived thereat. As BSSIDs included in signals transmitted by interfering stations 1c and 1d both match BSSID of the reception station 1b, the reception station 1b identifies each of the interfering stations 1c and 1d as a non-suppression target transmission source. As neither of BSSIDs included in signals transmitted by interfering stations 2a and 2b matches BSSID of the reception station 1b, the reception station 1b identifies each of the interfering stations 2a and 2b as a suppression target transmission source. The reception station 1b uses characteristic amounts of signals that are associated with the interfering stations (i.e., suppression target transmission sources) 2a and 2b and that have been measured in the past as characteristic amounts of interfering signals that are used to suppress the interfering signals from a received signal.

Abstract: A production method for heat-expandable microspheres, which have high expanding ratio and are thermally expanded into hollow particulates having excellent repeated-compression durability, and application thereof are provided. The method produces heat-expandable microspheres a shell of thermoplastic resin and a blowing agent being encapsulated therein and having a boiling point not higher than the softening point of the thermoplastic resin.

Abstract: A GaN-based semiconductor light-emitting element is provided and includes a first GaN-based compound semiconductor layer; an active layer having a multi-quantum well structure; and a second GaN-based compound semiconductor layer. At least one of barrier layers constituting the active layer is composed of a varying-composition barrier layer, and the composition of the varying-composition barrier layer varies in the thickness direction thereof so that the band-gap energy in a region of the varying-composition barrier layer, the region being adjacent to a boundary between a well layer disposed closer to the second GaN-based compound semiconductor layer and the varying-composition barrier layer, is lower than that in a region of the varying-composition barrier layer, the region being adjacent to a boundary between a well layer disposed closer to the first GaN-based compound semiconductor layer and the varying-composition barrier layer.

Abstract: A display device which is capable of generating more parallaxes without reducing resolution and an image quality, a display controlling method, and a program are provided. An aperture ratio of a light source is set as 1/N, and liquid lenses are disposed at distances of focal lengths of the first liquid lens and the second liquid lens from the light source, respectively. A position controlling portion changes a position of a nonpolar liquid by a size of each of luminescent pixels as represented by the first liquid lens and the second liquid lens, which results in that emitted lights from respective luminescent pixels pass through either the first liquid lens or the second liquid lens to be emitted in directions different from one another as shown in the form of lights. The present embodiments can be applied to a parallax image displaying device.

Abstract: A GaN-based semiconductor light-emitting element includes a first GaN-based compound semiconductor layer of n-conductivity type, an active layer, a second GaN-based compound semiconductor layer of p-conductivity type, a first electrode electrically connected to the first GaN-based compound semiconductor layer, a second electrode electrically connected to the second GaN-based compound semiconductor layer, an impurity diffusion-preventing layer composed of an undoped GaN-based compound semiconductor, the impurity diffusion-preventing layer preventing a p-type impurity from diffusing into the active layer, and a laminated structure or a third GaN-based compound semiconductor layer of p-conductivity type. The impurity diffusion-preventing layer and the laminated structure or the third GaN-based compound semiconductor layer of p-conductivity type are disposed, between the active layer and the second GaN-based compound semiconductor layer, in that order from the active layer side.

Abstract: A semiconductor light emitting device including an active layer, a compound semiconductor layer on the active layer, a contact layer on the compound semiconductor layer, and an electrode on the contact layer, where the contact layer is substantially the same size as the electrode.

Abstract: A production method for heat-expandable microspheres, which have high expanding ratio and are thermally expanded into hollow particulates having excellent repeated-compression durability, and application thereof are provided. The method produces heat-expandable microspheres a shell of thermoplastic resin and a blowing agent being encapsulated therein and having a boiling point not higher than the softening point of the thermoplastic resin.

Abstract: A GaN-based semiconductor light-emitting element is provided and includes a first GaN-based compound semiconductor layer; an active layer having a multi-quantum well structure; and a second GaN-based compound semiconductor layer. At least one of barrier layers constituting the active layer is composed of a varying-composition barrier layer, and the composition of the varying-composition barrier layer varies in the thickness direction thereof so that the band-gap energy in a region of the varying-composition barrier layer, the region being adjacent to a boundary between a well layer disposed closer to the second GaN-based compound semiconductor layer and the varying-composition barrier layer, is lower than that in a region of the varying-composition barrier layer, the region being adjacent to a boundary between a well layer disposed closer to the first GaN-based compound semiconductor layer and the varying-composition barrier layer.

Abstract: A GaN-based semiconductor light-emitting element includes a first GaN-based compound semiconductor layer of n-conductivity type, an active layer, a second GaN-based compound semiconductor layer of p-conductivity type, a first electrode electrically connected to the first GaN-based compound semiconductor layer, a second electrode electrically connected to the second GaN-based compound semiconductor layer, an impurity diffusion-preventing layer composed of an undoped GaN-based compound semiconductor, the impurity diffusion-preventing layer preventing a p-type impurity from diffusing into the active layer, and a laminated structure or a third GaN-based compound semiconductor layer of p-conductivity type. The impurity diffusion-preventing layer and the laminated structure or the third GaN-based compound semiconductor layer of p-conductivity type are disposed, between the active layer and the second GaN-based compound semiconductor layer, in that order from the active layer side.

Abstract: A display device which is capable of generating more parallaxes without reducing resolution and an image quality, a display controlling method, and a program are provided. An aperture ratio of a light source is set as 1/N, and liquid lenses are disposed at distances of focal lengths of the first liquid lens and the second liquid lens from the light source, respectively. A position controlling portion changes a position of a nonpolar liquid by a size of each of luminescent pixels as represented by the first liquid lens and the second liquid lens, which results in that emitted lights from respective luminescent pixels pass through either the first liquid lens or the second liquid lens to be emitted in directions different from one another as shown in the form of lights. The present embodiments can be applied to a parallax image displaying device.