Abstract: A method for manufacturing a semiconductor substrate, including: applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film directly or indirectly on the substrate; forming a resist pattern directly or indirectly on the resist underlayer film; and performing etching using the resist pattern as a mask. The composition for forming a resist underlayer film contains: a polymer having a repeating unit represented by formula (1) and a solvent. Ar1 is a divalent group including an aromatic ring having 5 to 40 ring atoms; and R0 is a monovalent group including an aromatic ring having 5 to 40 ring atoms and includes at least one group selected from the group consisting of groups represented by formula (2-1) and groups represented by formula (2-2).

Abstract: A composition that enables a resist underlayer film to be formed, contains: a compound having at least one partial structure represented by formula (1); and a solvent. In the formula (1), for example, Ar1 represents a group obtained by removing (p+1) hydrogen atoms on an aromatic carbon ring from a substituted or unsubstituted arene having 6 to 30 ring atoms, or a group obtained by removing (p+1) hydrogen atoms on an aromatic heteroring from a substituted or unsubstituted heteroarene having 5 to 30 ring atoms; Ar2 represents a substituted or unsubstituted aryl group having 6 to 30 ring atoms, or a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms, and R2 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms, and R3 represents an ethynediyl group or a substituted or unsubstituted ethenediyl group.

Abstract: A composition includes: a polymer including a repeating unit represented by formula (1); and a solvent. In the formula (1), Ar1 is a divalent group including an aromatic ring having 5 to 40 ring atoms; and R0 is a group represented by formula (1-1) or (1-2). In the formulas (1-1) and (1-2), X1 and X2 are each independently a group represented by formula (i), (ii), (iii) or (iv); * is a bond with the carbon atom in the formula (1); and Ar2, Ar3 and Ar4 are each independently a substituted or unsubstituted aromatic ring having 6 to 20 ring atoms that forms a fused ring structure together with the two adjacent carbon atoms in the formulas (1-1) and (1-2).

Abstract: A composition includes: a polymer including a repeating unit represented by formula (1); and a solvent. In the formula (1), Ar1 is a divalent group including an aromatic ring having 10 to 40 ring atoms; and R0 is a monovalent group including a heteroaromatic ring which includes a sulfur atom as a ring-forming atom.

Abstract: A method for manufacturing a semiconductor substrate includes forming a resist underlayer film directly or indirectly on a substrate by applying a composition. The composition includes a compound and a solvent. The compound includes: at least one nitrogen-containing ring structure selected from the group consisting of a pyridine ring structure and a pyrimidine ring structure; and a partial structure represented by formula (1-1) or (1-2). X1 and X2 are each independently a group represented by formula (i), (ii), (iii), or (iv); * is a bond with a moiety of the compound other than the partial structure represented by formula (1-1) or (1-2); and Ar11 and Ar12 are each independently a substituted or unsubstituted aromatic ring having 5 to 20 ring members that forms a fused ring structure together with the two adjacent carbon atoms in the formulas (1-1) and (1-2).

Abstract: The composition contains a compound and a solvent. The compound includes a group represented by formula (1). The compound has a molecular weight of no less than 200 and has a percentage content of carbon atoms of no less than 40% by mass. In the formula (1), R1 and R2 each independently represent a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group having 1 to 20 carbon atoms or a monovalent fluorinated hydrocarbon group having 1 to 20 carbon atoms, or R1 and R2 taken together represent a part of an alicyclic structure having 3 to 20 ring atoms constituted together with the carbon atom to which R1 and R2 bond; Ar1 represents a group obtained by removing (n+3) hydrogen atoms from an arene or heteroarene having 6 to 20 ring atoms; and X represents an oxygen atom, —CR3R4—, —CR3R4—O— or —O—CR3R4—.

Abstract: A composition for resist underlayer film formation, includes a compound represented by formula (1) and a solvent. Ar1 represents an aromatic heterocyclic group having a valency of m and having 5 to 20 ring atoms; m is an integer of 1 to 11; Ar2 is a group bonding to a carbon atom of the aromatic heteroring in Ar1 and represents an aromatic carbocyclic group having 6 to 20 ring atoms and having a valency of (n+1) or an aromatic heterocyclic group having 5 to 20 ring atoms and having a valency of (n+1); n is an integer of 0 to 12; and R1 represents a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group, a halogen atom, or a nitro group.

Abstract: A composition for resist underlayer film formation, includes a compound represented by formula (1) and a solvent. Ar1 represents an aromatic heterocyclic group having a valency of m and having 5 to 20 ring atoms; m is an integer of 1 to 11; Ar2 is a group bonding to a carbon atom of the aromatic heteroring in Ar1 and represents an aromatic carbocyclic group having 6 to 20 ring atoms and having a valency of (n+1) or an aromatic heterocyclic group having 5 to 20 ring atoms and having a valency of (n+1); n is an integer of 0 to 12; and R1 represents a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group, a halogen atom, or a nitro group.

Abstract: A composition for resist underlayer film formation contains: a compound having a partial structure represented by the following formula (1); and a solvent. In the formula (1): X represents a group represented by formula (i), (ii), (iii) or (iv). In the formula (i): R1 and R2 each independently represent a hydrogen atom, a substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms, or a substituted or unsubstituted aralkyl group having 7 to 20 carbon atoms provided that at least one of R1 and R2 represents the substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms or the substituted or unsubstituted aralkyl group having 7 to 20 carbon atoms; or R1 and R2 taken together represent a part of a ring structure having 3 to 20 ring atoms together with the carbon atom to which R1 and R2 bond.

Abstract: A composition for resist underlayer film formation contains: a first compound including at least one oxazine structure fused to an aromatic ring; and a solvent. The first compound preferably includes a partial structure represented by formula (1). In formula (1), R2 to R5 each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; Ar1 represents a group obtained by removing (n+3) or (n+2) hydrogen atoms on the aromatic ring from an arene having 6 to 20 carbon atoms; R6 represents a hydroxy group, a halogen atom, a nitro group or a monovalent organic group having 1 to 20 carbon atoms; and n is an integer of 0 to 9.

Abstract: A composition that enables a resist underlayer film to be formed, contains: a compound having at least one partial structure represented by formula (1); and a solvent. In the formula (1), for example, Ar1 represents a group obtained by removing (p+1) hydrogen atoms on an aromatic carbon ring from a substituted or unsubstituted arene having 6 to 30 ring atoms, or a group obtained by removing (p+1) hydrogen atoms on an aromatic heteroring from a substituted or unsubstituted heteroarene having 5 to 30 ring atoms; Ar2 represents a substituted or unsubstituted aryl group having 6 to 30 ring atoms, or a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms, and R2 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms, and R3 represents an ethynediyl group or a substituted or unsubstituted ethenediyl group.

Abstract: A composition for resist underlayer film formation, includes a compound represented by formula (1) and a solvent. Ar1 represents an aromatic heterocyclic group having a valency of m and having 5 to 20 ring atoms; m is an integer of 1 to 11; Ar2 is a group bonding to a carbon atom of the aromatic heteroring in Ar1 and represents an aromatic carbocyclic group having 6 to 20 ring atoms and having a valency of (n+1) or an aromatic heterocyclic group having 5 to 20 ring atoms and having a valency of (n+1); n is an integer of 0 to 12; and R1 represents a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group, a halogen atom, or a nitro group.

Abstract: The composition contains a compound and a solvent. The compound includes a group represented by formula (1). The compound has a molecular weight of no less than 200 and has a percentage content of carbon atoms of no less than 40% by mass. In the formula (1), R1 and R2 each independently represent a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group having 1 to 20 carbon atoms or a monovalent fluorinated hydrocarbon group having 1 to 20 carbon atoms, or R1 and R2 taken together represent a part of an alicyclic structure having 3 to 20 ring atoms constituted together with the carbon atom to which R1 and R2 bond; Ar1 represents a group obtained by removing (n+3) hydrogen atoms from an arene or heteroarene having 6 to 20 ring atoms; and X represents an oxygen atom, —CR3R4—, —CR3R4—O— or —O—CR3R4—.

Abstract: A composition for resist underlayer film formation contains: a compound having a partial structure represented by the following formula (1); and a solvent. In the formula (1): X represents a group represented by formula (i), (ii), (iii) or (iv). In the formula (i): R1 and R2 each independently represent a hydrogen atom, a substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms, or a substituted or unsubstituted aralkyl group having 7 to 20 carbon atoms provided that at least one of R1 and R2 represents the substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms or the substituted or unsubstituted aralkyl group having 7 to 20 carbon atoms; or R1 and R2 taken together represent a part of a ring structure having 3 to 20 ring atoms together with the carbon atom to which R1 and R2 bond.

Abstract: A composition for resist underlayer film formation contains: a first compound including at least one oxazine structure fused to an aromatic ring; and a solvent. The first compound preferably includes a partial structure represented by formula (1). In formula (1), R2 to R5 each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; Ar1 represents a group obtained by removing (n+3) or (n+2) hydrogen atoms on the aromatic ring from an arene having 6 to 20 carbon atoms; R6 represents a hydroxy group, a halogen atom, a nitro group or a monovalent organic group having 1 to 20 carbon atoms; and n is an integer of 0 to 9.

Abstract: A startup self-diagnostic apparatus for an electrical storage system including an electrical storage device, a charge and discharge switch device disposed to be connected to the electrical storage device, an electrical storage device breaker disposed between the electrical storage device and the charge and discharge switch device, and a load side breaker disposed between the charge and discharge switch device and an external load comprises a state monitoring unit for the electrical storage device breaker, a state monitoring unit for the load side breaker, a converter diagnosing unit, a switching device diagnosing unit, and an electrical storage device monitoring unit, for diagnosing peripheral diagnostic items which may be diagnosed without using the electrical storage device.

Abstract: A startup self-diagnostic apparatus for an electrical storage system including an electrical storage device, a charge and discharge switch device disposed to be connected to the electrical storage device, an electrical storage device breaker disposed between the electrical storage device and the charge and discharge switch device, and a load side breaker disposed between the charge and discharge switch device and an external load comprises a state monitoring unit for the electrical storage device breaker, a state monitoring unit for the load side breaker, a converter diagnosing unit, a switching device diagnosing unit, and an electrical storage device monitoring unit, for diagnosing peripheral diagnostic items which may be diagnosed without using the electrical storage device.

Abstract: A system-design support program and method capable of visualizing costs necessary for system creation and maintenance in an easy-to-understand manner. When a function-selection receiving means receives functions selected and input, to be applied to a computer system, a resource output means refers to a resource information table which has resource information that includes the fixed cost and variable cost of each resource, to output a list of resource information related to resources available for implementing the selected functions. Next, when a resource-selection receiving means receives resources selected and input, to be employed in the computer system to be created, from the list, outputted by the resource output means, a cost output means sums up the fixed costs and variable costs of the selected resources to indicate the fixed cost and variable cost of the computer system to be created.

Abstract: A program and method for supporting system design which are capable of determining risks that may occur in operating a proposed system. When client requirements regarding a system to be installed are inputted to a requirement acceptance unit, an item extraction unit extracts risk items that may occur, from risk management information on the basis of the client requirements accepted by the requirement acceptance unit. Then the risk list creation unit creates and outputs a risk list including a list of the risk items extracted by the item extraction unit.