Abstract: A power amplifier module includes a substrate, a power amplifier having a first surface on which an electrode is defined and a second surface opposite the first surface, the first surface faces a principal surface of the substrate, a surface acoustic wave duplexer having a first surface on which an electrode is defined and a second surface opposite the first surface, the first surface faces the principal surface of the substrate, a heat dissipation unit defined on another principal surface of the substrate, a heat dissipation path that connects a connecting portion between the power amplifier and the principal surface to the heat dissipation unit, an insulating resin that covers the power amplifier and the surface acoustic wave duplexer, a conductive shield that covers the insulating resin, and a first conductive unit defined on the second surface of the surface acoustic wave duplexer and electrically connected to the conductive shield.

Abstract: An electronic component includes an electronic component element including first and second main surfaces, a heat-dissipation accelerating member on the first main surface, a sealing resin layer sealing the electronic component element, and a shielding member provided on the sealing resin layer and electrically connected to the heat-dissipation accelerating member. The heat-dissipation accelerating member includes fourth and fifth main surfaces. The electronic component includes a connecting member disposed on the fifth main surface of the heat-dissipation accelerating member and electrically connecting at least one portion of the heat-dissipation accelerating member and the shielding member. The connecting member has a higher thermal conductivity than the sealing resin layer. The contact area between the heat-dissipation accelerating member and the connecting member is smaller than the area of the fifth main surface.

Abstract: A power amplifier module includes a substrate, a power amplifier having a first surface on which an electrode is defined and a second surface opposite the first surface, the first surface faces a principal surface of the substrate, a surface acoustic wave duplexer having a first surface on which an electrode is defined and a second surface opposite the first surface, the first surface faces the principal surface of the substrate, a heat dissipation unit defined on another principal surface of the substrate, a heat dissipation path that connects a connecting portion between the power amplifier and the principal surface to the heat dissipation unit, an insulating resin that covers the power amplifier and the surface acoustic wave duplexer, a conductive shield that covers the insulating resin, and a first conductive unit defined on the second surface of the surface acoustic wave duplexer and electrically connected to the conductive shield.

Abstract: An electronic component includes an electronic component element including first and second main surfaces, a heat-dissipation accelerating member on the first main surface, a sealing resin layer sealing the electronic component element, and a shielding member provided on the sealing resin layer and electrically connected to the heat-dissipation accelerating member. The heat-dissipation accelerating member includes fourth and fifth main surfaces. The electronic component includes a connecting member disposed on the fifth main surface of the heat-dissipation accelerating member and electrically connecting at least one portion of the heat-dissipation accelerating member and the shielding member. The connecting member has a higher thermal conductivity than the sealing resin layer. The contact area between the heat-dissipation accelerating member and the connecting member is smaller than the area of the fifth main surface.

Abstract: A semiconductor device capable of attaining the reduction of size is disclosed. The semiconductor device comprises a module substrate having a surface and a back surface, a control chip mounted on the surface of the module substrate, plural chip parts mounted on the surface in adjacency to the control chip, first and second output chips mounted on the back surface of the module substrate, plural lands formed on the back surface of the module substrate, and a seal portion formed of resin to seal the control chip and the plural chip parts, wherein the first and second output chips are larger in the amount of heat generated than the control chip, the heat from the first and second output ships is radiated to a mother board, and packaging parts on the surface side of the module substrate are sealed with only a sealing resin without using a metallic case or the like to attain the reduction in size of the module.

Abstract: A semiconductor device capable of attaining the reduction of size is disclosed. The semiconductor device comprises a module substrate having a surface and a back surface, a control chip mounted on the surface of the module substrate, plural chip parts mounted on the surface in adjacency to the control chip, first and second output chips mounted on the back surface of the module substrate, plural lands formed on the back surface of the module substrate, and a seal portion formed of resin to seal the control chip and the plural chip parts, wherein the first and second output chips are larger in the amount of heat generated than the control chip, the heat from the first and second output ships is radiated to a mother board, and packaging parts on the surface side of the module substrate are sealed with only a sealing resin without using a metallic case or the like to attain the reduction in size of the module.