Abstract: An object is to provide a highly reliable semiconductor device including a thin film transistor having stable electric characteristics. In addition, another object is to manufacture a highly reliable semiconductor device at low cost with high productivity. In a method for manufacturing a semiconductor device including a thin film transistor including an oxide semiconductor layer as a channel formation region, the oxide semiconductor layer is heated under a nitrogen atmosphere to lower its resistance, thereby forming a low-resistance oxide semiconductor layer. Further, resistance of a region of the low-resistance oxide semiconductor layer, which is overlapped with a gate electrode layer, is selectively increased, thereby forming a high-resistance oxide semiconductor layer. Resistance of the oxide semiconductor layer is increased by forming a silicon oxide film in contact with the oxide semiconductor layer by a sputtering method.

Abstract: The present invention provides a lightweight, thin light-emitting device having a new structure which has a plurality of display screens. Further, the invention provides a dual emission type display device which can perform a pure black display and can achieve high contrast. According to the invention, at least, both electrodes of a light-emitting element (an anode and a cathode of a light-emitting element) are highly light-transmitting at the same level, and a polarizing plate or a circularly polarizing plate is provided, thereby conducting a pure black display that is a state of no light-emission and enhancing the contrast. Moreover, unevenness of color tones in displays of the both sides, which is a problem of a full-color dual emission type display device structure, can be solved according to the invention.

Abstract: An object of an embodiment of the present invention is to provide a semiconductor device provided with a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor layer including silicon oxide, an insulating layer between the gate electrode and the oxide semiconductor layer, and source and drain regions between the oxide semiconductor layer including silicon oxide and source and drain electrode layers. The source and drain regions are formed using a degenerate oxide semiconductor material or a degenerate oxynitride material.

Abstract: If an oxide semiconductor layer is crystallized by heat treatment without being covered with an inorganic insulating film, surface unevenness and the like are formed due to the crystallization, which may cause variation in electrical characteristics. Steps are performed in the following order: a second insulating film is formed on an oxide semiconductor layer over a substrate and then heat treatment is performed, instead of performing heat treatment during a period immediately after formation of the oxide semiconductor layer and immediately before formation of an inorganic insulating film including silicon oxide on the oxide semiconductor layer. The density of hydrogen included in the inorganic insulating film including silicon oxide is 5×1020/cm3 or more, and the density of nitrogen is 1×1019/cm3 or more.

Abstract: An object is to provide a semiconductor device including a semiconductor element which has favorable characteristics. A manufacturing method of the present invention includes the steps of: forming a first conductive layer which functions as a gate electrode over a substrate; forming a first insulating layer to cover the first conductive layer; forming a semiconductor layer over the first insulating layer so that part of the semiconductor layer overlaps with the first conductive layer; forming a second conductive layer to be electrically connected to the semiconductor layer; forming a second insulating layer to cover the semiconductor layer and the second conductive layer; forming a third conductive layer to be electrically connected to the second conductive layer; performing first heat treatment after forming the semiconductor layer and before forming the second insulating layer; and performing second heat treatment after forming the second insulating layer.

Abstract: An object is to provide a semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics. An oxide semiconductor layer including SiOx is used in a channel formation region, and in order to reduce contact resistance with source and drain electrode layers formed using a metal material with low electric resistance, source and drain regions are provided between the source and drain electrode layers and the oxide semiconductor layer including SiOx. The source and drain regions are formed using an oxide semiconductor layer which does not include SiOx or an oxynitride film.

Abstract: A semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics and reliability. Film deposition is performed using an oxide semiconductor target containing an insulator (an insulating oxide, an insulating nitride, silicon oxynitride, aluminum oxynitride, or the like), typically SiO2, so that the semiconductor device in which the Si-element concentration in the thickness direction of the oxide semiconductor layer has a gradient which increases in accordance with an increase in a distance from a gate electrode is realized.

Abstract: The present invention provides a lightweight, thin light-emitting device having a new structure which has a plurality of display screens. Further, the invention provides a dual emission type display device which can perform a pure black display and can achieve high contrast. According to the invention, at least, both electrodes of a light-emitting element (an anode and a cathode of a light-emitting element) are highly light-transmitting at the same level, and a polarizing plate or a circularly polarizing plate is provided, thereby conducting a pure black display that is a state of no light-emission and enhancing the contrast. Moreover, unevenness of color tones in displays of the both sides, which is a problem of a full-color dual emission type display device structure, can be solved according to the invention.

Abstract: There has been a problem that difference in refractive index between an opposite substrate or a moisture barrier layer (passivation film) such as SiN provided thereover, and air is maintained large, and light extraction efficiency is low. Further, there has been a problem that peeling or cracking due to the moisture barrier layer is easily generated, which leads to deteriorate the reliability and lifetime of a light-emitting element. According to the present invention, a light-emitting element comprises a pixel electrode, an electroluminescent layer, a transparent electrode, a passivation film, a stress relieving layer, and a low refractive index layer, all of which are stacked sequentially. The stress relieving layer serves to prevent peeling of the passivation film. The low refractive index layer serves to reduce reflectivity of light generated in the electroluminescent layer in emitting to air.

Abstract: There has been a problem that difference in refractive index between an opposite substrate or a moisture barrier layer (passivation film) such as SiN provided thereover, and air is maintained large, and light extraction efficiency is low. Further, there has been a problem that peeling or cracking due to the moisture barrier layer is easily generated, which leads to deteriorate the reliability and lifetime of a light-emitting element. According to the present invention, a light-emitting element comprises a pixel electrode, an electroluminescent layer, a transparent electrode, a passivation film, a stress relieving layer, and a low refractive index layer, all of which are stacked sequentially. The stress relieving layer serves to prevent peeling of the passivation film. The low refractive index layer serves to reduce reflectivity of light generated in the electroluminescent layer in emitting to air.

Abstract: An object of the present invention is to elucidate a collagen peptide composed of oligopeptides having ability to enter the blood higher than that of conventional collagen peptides and thus to provide a food or beverage mixed with the collagen peptide. The present invention provides a collagen peptide composition obtainable by digesting a collagen or gelatin with protease, which comprises 70% to 100% by weight of peptides with a molecular weight 500 or more to 3000 or less, less than 10% by weight of peptides with a molecular weight of less than 500, and less than 20% by weight of peptides with a molecular weight of more than 3000, based on the total weight of the composition, wherein the ratio of N-terminal glycine residues to total of the N-terminal amino acid residues of the peptides in the composition is 33 mol % or more to 65 mol % or less.

Abstract: The invention relates to a radiation-curable liquid resin composition comprising: (A) 20-90 wt % of a urethane(meth)acrylate oligomer, and (B) 1-35 wt % of a monomer shown by the following formula (1), wherein R1 represents a hydrogen atom or a methyl group, R2 and R3 individually represent a hydrogen atom or an alkyl group having 1-4 carbon atoms, R4 represents a hydrogen atom or a methyl group, and n represents an integer of 1-6, or a monomer including a hydroxyl group.

Abstract: An object is to provide a light-emitting element and a light-emitting device each of which consumes less power and has high emission efficiency, high performance, and high reliability. A light-emitting element has an EL layer provided with a light-emitting layer, which includes an inorganic light-emitting material containing a mixed-valence compound, between a pair of electrode layers. When an element in a given compound has a plurality of valences, this element is in a state that is referred to as a mixed-valence state and this compound is referred to as a mixed-valence compound. The mixed-valence compound affects charge mobility and emission color, and a light-emitting device having such a light-emitting element consumes less power, has high reliability and high image quality, and emits various colors of light.

Abstract: The invention aims to provide a curable liquid resin composition which produces a cured product having excellent surface slip characteristics and printability and has excellent liquid resin stability. This problem is solved by providing a curable liquid resin composition, comprising a silicone including an alkyl-modified siloxane unit and a polyether-modified siloxane unit.

Abstract: An object is to provide a highly functional and reliable light-emitting element and light-emitting device with lower power consumption and high emission efficiency. The light-emitting element has an EL layer that has a stacked structure including a light-emitting element containing an organic compound and a functional layer having separate functions between a pair of electrode layers. In the light-emitting element including the functional layer and the light-emitting element containing an organic compound, a mixed-valence compound is contained in the functional layers. When an element in a compound has a plurality of valences, this element is in a state that is referred to as a mixed-valence state and this compound is referred to as a mixed-valence compound.

Abstract: A compound tube is disclosed that includes an outer tube and an inner tube disposed in the outer tube. A passage is defined between the outer tube and the inner tube. Various methods of joining the outer tube to the inner tube are disclosed.

Abstract: The present invention provides a manufacturing method of an inorganic EL material with high safety, in which the number of steps is reduced, in order to improve emission luminance, efficiency, or life time as compared with a conventional material. The present invention provides a manufacturing method of an inorganic EL material, in a case where a material is used, which is a necessary element or compound for synthesis of the inorganic EL material but includes an element to be unnecessary for the light-emission mechanism. Further, it is an object to provide a light-emitting device and an electronic device using the thusly synthesized inorganic material. In the present invention, a plurality of materials each of which vapor pressure is different are separately disposed in a sealed-tube container, and baking by heating are performed so that at least one of the materials is evaporated, whereby an electroluminescent material is manufactured by baking.

Abstract: A light emitting element has been fabricated by making a barrier having a curved surface having a radius of curvature at the upper portion or lower portion, washing a surface of an anode with a porous sponge in order to remove minute grains dotted on the surface of the anode, and performing the vacuum heating in order to remove absorbed water of a whole of a substrate on which a TFT and the barrier have been provided immediately before a layer containing an organic compound is formed.

Abstract: A method of manufacturing a double pipe includes a step of inserting a straight inner pipe into a straight outer pipe such that the inner pipe and the outer pipe are positioned at a predetermined relative position, a step of fixing a first end portion of the outer pipe to the inner pipe so as to form a first fixing portion, a step of bending the outer pipe and the inner pipe at the same time at a predetermined portion so as to form at least one bending portion after the fixing step of the first end portion, and a step of fixing a second end portion of the outer pipe to the inner pipe so as to form a second end portion after the bending.

Abstract: It is an object of the present invention to provide a new light-emitting element and manufacturing method thereof in which actively diffusing a material into a film formation layer is utilized where an interface state and interdiffusion between a compound semiconductor substrate and a film formation layer formed thereover are not considered to be problematic. According to one feature of the present invention, unevenness is formed over the surface of a compound semiconductor substrate through chemical treatment, a compound semiconductor layer is formed over the surface of the compound semiconductor substrate having unevenness, atoms of the compound semiconductor substrate are diffused into the compound semiconductor layer through heat treatment, a first conductive layer is formed over the compound semiconductor substrate, and a second conductive layer is formed over the compound semiconductor layer.