Abstract: There is provided a sputtering method in which abnormal discharging due to charge-up of a to-be-processed substrate is restrained and in which a good transparent conductive film can be formed on a to-be-processed large-area substrate. Out of a plurality of targets disposed side by side with, and at a predetermined distance from, one another so as to lie opposite to the to-be-processed substrate inside a sputtering chamber, electric power is applied, by alternately changing polarity at a predetermined frequency, to the targets that form respective pairs. Each target is thus alternately switched to anode electrode and cathode electrode. Glow discharge is thus generated between the anode electrode and the cathode electrode to thereby form plasma atmosphere, whereby each target is sputtered. During sputtering, electric power application to each of the targets is intermittently stopped.

Abstract: According to the invention, when targets are sputtered, each of them moves with respect to a substrate; and therefore, the entire area of the substrate is opposed to the targets during sputtering, so that a film of homogeneous quality can be formed on the surface of the substrate. During the sputtering, not only the targets but also magnetic field forming devices are moved relative to the targets, and therefore, a large area of the targets can be sputtered. In addition, when the magnetic field forming devices are also moved with respect to the substrate, the region of the target which is highly sputtered, moves with respect to the substrate, so that the thickness distribution of the film formed on the substrate can be even more uniform.

Abstract: According to the invention, when targets are sputtered, each of them moves with respect to a substrate; and therefore, the entire area of the substrate is opposed to the targets during sputtering, so that a film of homogeneous quality can be formed on the surface of the substrate. During the sputtering, not only the targets but also magnetic field forming devices are moved relative to the targets, and therefore, a large area of the targets can be sputtered. In addition, when the magnetic field forming devices are also moved with respect to the substrate, the region of the target which is highly sputtered, moves with respect to the substrate, so that the thickness distribution of the film formed on the substrate can be even more uniform.