Abstract: A step of forming a first auxiliary groove in a semiconductor element structure provided on a semiconductor substrate, a step of forming a second auxiliary groove in the semiconductor element structure, and a step of dividing the semiconductor substrate and the semiconductor element structure in a direction along the first auxiliary groove and the second auxiliary groove are provided, and in the dividing direction, a plurality of the second auxiliary grooves are arranged spaced apart from each other, and at least two first auxiliary grooves are arranged spaced apart from each other between at least a pair of adjacent second auxiliary grooves, and in the dividing step, a separation region interposed between the two first auxiliary grooves is divided, so as to improve such accuracy and suppress the problems such as a damage of the end surface due to cleavage of the substrate.

Abstract: A plasma processing is performed by using a plasma processing apparatus which includes a first electrode and a second electrode disposed relatively movable to the first electrode between which an object to be processed is disposed, and a solid dielectric material disposed to be continuously connected to at least processing starting and final end sides of the object. A process gas is introduced between the first and second electrodes under a state in which the first electrode abuts on entire surfaces of the object and the solid dielectric material, and a voltage is applied between the first and second electrodes to thereby process the object by plasma discharge generated between the first and second electrodes while moving the second electrode relatively to the first electrode and the object.

Abstract: A step of forming a first auxiliary groove in a semiconductor element structure provided on a semiconductor substrate, a step of forming a second auxiliary groove in the semiconductor element structure, and a step of dividing the semiconductor substrate and the semiconductor element structure in a direction along the first auxiliary groove and the second auxiliary groove are provided, and in the dividing direction, a plurality of the second auxiliary grooves are arranged spaced apart from each other, and at least two first auxiliary grooves are arranged spaced apart from each other between at least a pair of adjacent second auxiliary grooves, and in the dividing step, a separation region interposed between the two first auxiliary grooves is divided, so as to improve such accuracy and suppress the problems such as a damage of the end surface due to cleavage of the substrate.

Abstract: To provide a muffler device capable of improving the discharge of exhaust gas, while discharging the exhaust gas in any desired direction. The muffler device is connected to a rear end portion of an exhaust pipe extending from an internal combustion engine of a vehicle. An exhaust outlet opening is provided that opens outwardly and laterally of the vehicle and is disposed at a rear portion of a muffler main body. The muffler main body is provided with a muffler side cover and an end cap as muffler covers. The muffler side cover includes a slit. The slit serves as an air intake guide shaped portion for guiding ambient air so that the ambient air crosses the exhaust outlet.

Abstract: A fender assembly is divided into an upper fender and a lower fender with a air guide port being formed in the upper fender wherein the entry of muddy water splashed up in a tangential line direction by a front wheel into the air guide port is prevented and the size of the upper fender is reduced. An upper fender is secured to upper forks of the front forks, while a lower fender is secured to lower forks. The upper fender is disposed in a range in which muddy water is blocked by the lower fender. An air guide port is formed in the upper fender and an air guide path is formed by a fender recess extending forward of the air guide port and a lower portion of a visor which covers the fender recess from above.

Abstract: The present invention provides a plasma processing method capable of being used for manufacturing color filters which are substantially free from defects such as white spots and color mixture of inks and color filters manufactured by using the same. A plasma processing device according to the present invention comprises a stage mainly acting also as a lower electrode; and a head electrode in which an upper electrode is stored and from which plasma raw material gas is ejected. By ejecting plasma raw material gas from the head electrode, applying voltage between the stage and the head electrode by an alternate power source to induce plasma electric discharge and by scanning over a workpiece material (glass substrate) by the head electrode, the workpiece material (glass substrate) is subjected to the plasma processing.

Abstract: A plasma processing is performed by using a plasma processing apparatus which includes a first electrode and a second electrode disposed relatively movable to the first electrode between which an object to be processed is disposed, and a solid dielectric material disposed to be continuously connected to at least processing starting and final end sides of the object. A process gas is introduced between the first and second electrodes under a state in which the first electrode abuts on entire surfaces of the object and the solid dielectric material, and a voltage is applied between the first and second electrodes to thereby process the object by plasma discharge generated between the first and second electrodes while moving the second electrode relatively to the first electrode and the object.

Abstract: A plasma processing is performed by providing a first and a second electrodes to be relatively parallelly movable, disposing an object to be processed on the second electrode so as to face the first electrode and providing a blocking member to both end portions of the second electrode, so that a plasma processing space is blocked by the blocking member when the first and second electrodes are moved relatively with each other. A voltage is applied to both the first and the second electrodes and a process gas is introduced into the plasma processing space formed between the first and second electrodes, and the plasma is irradiated to the object. The blocking member is provided so as to extend from the second electrode to the first electrode, and an upper surface of the blocking member is raised higher than a surface level of the object to be processed.

Abstract: To provide a muffler device capable of improving the discharge of exhaust gas, while discharging the exhaust gas in any desired direction. The muffler device is connected to a rear end portion of an exhaust pipe extending from an internal combustion engine of a vehicle. An exhaust outlet opening is provided that opens outwardly and laterally of the vehicle and is disposed at a rear portion of a muffler main body. The muffler main body is provided with a muffler side cover and an end cap as muffler covers. The muffler side cover includes a slit. The slit serves as an air intake guide shaped portion for guiding ambient air so that the ambient air crosses the exhaust outlet.

Abstract: A fender assembly is divided into an upper fender and a lower fender with a air guide port being formed in the upper fender wherein the entry of muddy water splashed up in a tangential line direction by a front wheel into the air guide port is prevented and the size of the upper fender is reduced. An upper fender is secured to upper forks of the front forks, while a lower fender is secured to lower forks. The upper fender is disposed in a range in which muddy water is blocked by the lower fender. An air guide port is formed in the upper fender and an air guide path is formed by a fender recess extending forward of the air guide port and a lower portion of a visor which covers the fender recess from above.