Abstract: A control device includes: a retry determination unit configured to determine whether to execute retry control based on a current position of a moving object and a target position when the moving object is moved to the target position by automatic steering; and a notification control unit configured to transmit a retry notification, including information indicating that the retry control is to be executed based on a determination result of the retry determination unit, to a terminal device. The notification control unit transmits the retry notification to the terminal device when the retry control, executed after at least a part of the moving object reaches the target position, is determined, and the notification control unit does not transmit the retry notification to the terminal device when the retry control, executed before at least a part of the moving object reaches the target position, is determined.

Abstract: A moving body control device includes an outside recognition unit configured to acquire recognition data of an outside of a moving body, a reception unit which receives designation of a predetermined parking position from a user of the moving body, and a control unit configured to perform automatic parking control for parking the moving body at the predetermined parking position based on the recognition data of the outside and the predetermined parking position, and register the predetermined parking position as a designated parking position. The control unit is configured to register feature points related to the designated parking position by using a plurality of patterns based on illuminance of the outside calculated from the recognition data of the outside.

Abstract: Fabricating a high-quality nitride semiconductor crystal at a lower temperature. A nitride semiconductor crystal is fabricated by supplying onto a substrate (105) a group III element and/or a compound thereof, a nitrogen element and/or a compound thereof and an Sb element and/or a compound thereof, all of which serve as materials, and thereby vapor-growing at least one layer of nitride semiconductor film (104). A supply ratio of the Sb element to the nitrogen element in a growth process of the at least one layer of the nitride semiconductor film (104) is set to not less than 0.004.

Abstract: Fabricating a high-quality nitride semiconductor crystal at a lower temperature. A nitride semiconductor crystal is fabricated by supplying onto a substrate (105) a group III element and/or a compound thereof, a nitrogen element and/or a compound thereof and an Sb element and/or a compound thereof, all of which serve as materials, and thereby vapor-growing at least one layer of nitride semiconductor film (104). A supply ratio of the Sb element to the nitrogen element in a growth process of the at least one layer of the nitride semiconductor film (104) is set to not less than 0.004.

Abstract: Fabricating a high-quality nitride semiconductor crystal at a lower temperature. A nitride semiconductor crystal is fabricated by supplying onto a substrate (105) a group III element and/or a compound thereof, a nitrogen element and/or a compound thereof and an Sb element and/or a compound thereof, all of which serve as materials, and thereby vapor-growing at least one layer of nitride semiconductor film (104). A supply ratio of the Sb element to the nitrogen element in a growth process of the at least one layer of the nitride semiconductor film (104) is set to not less than 0.004.