Abstract: A core material has a core 12; a solder layer 16 made of a (Sn—Bi)-based solder alloy provided on an outer side of the core 12; and a Sn layer 20 provided on an outer side of the solder layer 16. The core contains metal or a resin. When a concentration ratio of Bi contained in the solder layer 16 is a concentration ratio (%)=a measured value of Bi (% by mass)/a target Bi content (% by mass), or a concentration ratio (%)=an average value of measured values of Bi (% by mass)/a target Bi content (% by mass), the concentration ratio is 91.4% to 106.7%. The thickness of the Sn layer 20 is 0.215% or more and 36% or less of the thickness of the solder layer 16.

Abstract: A secure computation apparatus (1) included in a secure relational algebraic operation system performs secure computation of a composite of a first relational algebraic operation and a second relational algebraic operation on an operation target input table. A ciphertext of an operation target table is input to an input unit (11). A first relational algebraic operation unit (12) performs secure computation of the first relational algebraic operation on the input table. A valid row extraction unit (13) generates an intermediate table obtained by extracting a valid row from an operation result of the first relational algebraic operation. A second relational algebraic operation unit (14) performs secure computation of the second relational algebraic operation on the intermediate table. An output unit (15) outputs an operation result of the second relational algebraic operation.

Abstract: Provided are a solder, a solder alloy, a solder ball, a solder paste, and a solder joint, which have a low melting point, high hardness in a high-temperature environment, heat cycle resistance, and electromigration resistance. The solder alloy has an alloy composition by mass %, Bi: 30 to 60%, Ag: 0.7 to 2.0%, Cu: more than 0% and 1.00% or less, Ni: 0.01 to 1.00%, Sb: 0.2 to 1.5%, with the balance being Sn.

Abstract: A core material has a core 12; a solder layer 16 made of a (Sn—Bi)-based solder alloy provided on an outer side of the core 12; and a Sn layer 20 provided on an outer side of the solder layer 16. The core contains metal or a resin. When a concentration ratio of Bi contained in the solder layer 16 is a concentration ratio (%)=a measured value of Bi (% by mass)/a target Bi content (% by mass), or a concentration ratio (%)=an average value of measured values of Bi (% by mass)/a target Bi content (% by mass), the concentration ratio is 91.4% to 106.7%. The thickness of the Sn layer 20 is 0.215% or more and 36% or less of the thickness of the solder layer 16.

Abstract: Provided are a lead-free and antimony-free solder alloy which has a medium-low melting point and ensures solderability even after being held at a high temperature for a long time, a solder ball, a ball grid array, and a solder joint. The lead-free and antimony-free solder alloy has an alloy composition consisting of 12 to 23% by mass of In, and 0.001 to 0.08% by mass of Ge, with the balance being Sn and unavoidable impurities. Preferably, the alloy composition has 16 to 21% by mass of In; the alloy composition has 0.005 to 0.01% by mass of Ge; the alloy composition has 0.005 to 0.009% by mass of Ge; U and Th as the unavoidable impurities are each included in an amount of 5 mass ppb or less; and As and Pb as the unavoidable impurities are each included in an amount of 5 mass ppm or less.

Abstract: A computation apparatus, a method of the same, and a program which perform a secure computation using fixed-point arithmetic, and overflow is unlikely to occur and the occurrence of division by zero can be detected when an odds ratio is calculated. The computation apparatus includes an odds ratio computation unit for obtaining an odds ratio between a first group (a+b) and a second group (c+d) based on four plaintext values a, b, c, and d, by means of secure computation; a zero-division detection unit for determining, by means of secure computation, whether or not at least one of the plaintext values b and c is not zero, and detecting division by zero; and a selection unit for selecting the odds ratio if division by zero is not detected, by means of secure computation.

Abstract: The present invention provides techniques to calculate the number of surviving and the number of deaths while still concealing survival time data. The present invention includes: a group data position calculation means configured to calculate a share [[gA]] of a sequence gA and a share [[gB]] of a sequence gB represented by predetermined equations from a share [[g]] of a sequence g of values of group of survival time data included in a survival time data set D; a group data number calculation means configured to calculate a share [[sA]] and a share [[sB]] from a share [[t]] of a sequence t of values of time of survival time data included in the survival time data set D, the share [[gA]], and the share [[gB]], by [[sA]]=GroupSum ([[gA]], [[t]]), [[sB]]=GroupSum ([[gB]], [[t]]); and a survival number calculation means.

Abstract: A method includes applying a first flux onto an electrode provided on a substrate and placing a solder material on the electrode, heating the substrate to form a solder bump on the electrode, deforming the solder bump to provide a flat surface or a depressed portion on the solder bump, applying a second flux to the solder bump; placing a core material on the solder bump, the core material including a core portion and a solder layer that covers a surface of the core portion, and heating the substrate to join the core material to the electrode by the solder bump and the solder layer.

Abstract: A core material has a core 12; a solder layer 16 made of a (Sn—Bi)-based solder alloy provided on an outer side of the core 12; and a Sn layer 20 provided on an outer side of the solder layer 16. The core contains metal or a resin. When a concentration ratio of Bi contained in the solder layer 16 is a concentration ratio (%)=a measured value of Bi (% by mass)/a target Bi content (% by mass), or a concentration ratio (%)=an average value of measured values of Bi (% by mass)/a target Bi content (% by mass), the concentration ratio is 91.4% to 106.7%. The thickness of the Sn layer 20 is 0.215% or more and 36% or less of the thickness of the solder layer 16.

Abstract: The present invention provides a solder material containing Sn or a Sn-containing alloy and 40 to 320 ppm by mass of A, the solder material including an As-enriched layer.

Abstract: A method includes applying a first flux onto an electrode provided on a substrate and placing a solder material on the electrode, heating the substrate to form a solder bump on the electrode, deforming the solder bump to provide a flat surface or a depressed portion on the solder bump, applying a second flux to the solder bump; placing a core material on the solder bump, the core material including a core portion and a solder layer that covers a surface of the core portion, and heating the substrate to join the core material to the electrode by the solder bump and the solder layer.

Abstract: The Cu core ball contains a Cu ball and a solder layer for covering a surface of the Cu ball. The Cu ball contains at least one element selected from Fe, Ag, and Ni in a total amount of 5.0 or more to 50.0 ppm by mass or lower, S in an amount of 0 or more to 1.0 ppm by mass or lower, P in an amount of 0 or more to less than 3.0 ppm by mass, and remainder of Cu and inevitable impurities. The Cu ball contains purity which is 99.995% or higher and 99.9995% by mass or lower, and sphericity which is 0.95 or higher. The solder layer includes Ag in an amount of more than 0 to 4.0% by mass or less, Cu in an amount of more than 0 to 3.0% by mass or less, and remainder of Sn.

Abstract: The present invention provides a solder material containing Sn or a Sn-containing alloy and 40 to 320 ppm by mass of A, the solder material including an As-enriched layer.

Abstract: The Cu core ball contains a Cu ball and one or more metal layer for covering a surface of the Cu ball, each layer including one or more element selected from Ni, Co, Fe and Pd. The Cu ball contains at least one element selected from Fe, Ag, and Ni in a total amount of 5.0 or more to 50.0 ppm by mass or lower, S in an amount of 0 ppm by mass or more to 1.0 ppm by mass or lower, P in an amount of 0 ppm by mass or more to less than 3.0 ppm by mass, and remainder of Cu and inevitable impurities. The Cu ball contains purity which is 99.995% by mass or higher and 99.9995% or lower, sphericity which is 0.95 or higher and a diameter of 1 ?m or more to 1000 ?m or lower.

Abstract: Provided is a flux containing not less than 11.0 degrees and not more than 17.0 of a contact angle between the flux and a resist substrate on which the flux has been printed to have 1.0 mm of a diameter and 0.15 mm of a thickness when heating the resist substrate at 150 degrees C. for 30 seconds and cooling the resist substrate to a room temperature. The flux also contains more than zero seconds and not more than 2.0 seconds of a zero-cross time when heating a Cu plate at 150 degrees C. in a thermostat oven for 12 hours, applying the flux onto the baked Cu plate, and dipping the baked Cu plate onto which the flux is applied into a Sn-3.0Ag-0.5Cu alloy at a dipping speed of 15 mm/sec and by 2.0 mm of a dipped depth.

Abstract: A Cu core ball contains a Cu ball and at least one metal layer for covering a surface of the Cu ball. The metal layer is made of at least one element selected from the group of Ni, Co, Fe and Pd. The Cu ball contains at least one element selected from a group of Fe, Ag and Ni in a total amount of 5.0 ppm by mass or more to 50.0 ppm by mass or lower, S in an amount of 0 ppm by mass or more to 1.0 ppm by mass or lower, P in an amount of 0 ppm by mass or more to less than 3.0 ppm by mass, and remainder of Cu and inevitable impurities. The Cu ball contains purity which is 99.995% by mass or higher to 99.9995% by mass or lower, and sphericity which is 0.95 or higher.

Abstract: The Cu core ball contains a Cu ball and one or more metal layer for covering a surface of the Cu ball, each layer including one or more element selected from Ni, Co, Fe and Pd. The Cu ball contains at least one element selected from Fe, Ag, and Ni in a total amount of 5.0 or more to 50.0 ppm by mass or lower, S in an amount of 0 ppm by mass or more to 1.0 ppm by mass or lower, P in an amount of 0 ppm by mass or more to less than 3.0 ppm by mass, and remainder of Cu and inevitable impurities. The Cu ball contains purity which is 99.995% by mass or higher and 99.9995% or lower, sphericity which is 0.95 or higher and a diameter of 1 ?m or more to 1000 ?m or lower.

Abstract: The Cu core ball contains a Cu ball and a solder layer for covering a surface of the Cu ball. The Cu ball contains at least one element selected from Fe, Ag, and Ni in a total amount of 5.0 or more to 50.0 ppm by mass or lower, S in an amount of 0 or more to 1.0 ppm by mass or lower, P in an amount of 0 or more to less than 3.0 ppm by mass, and remainder of Cu and inevitable impurities. The Cu ball contains purity which is 99.995% or higher and 99.9995% by mass or lower, and sphericity which is 0.95 or higher. The solder layer includes Ag in an amount of more than 0 to 4.0% by mass or less, Cu in an amount of more than 0 to 3.0% by mass or less, and remainder of Sn.

Abstract: Provided is a flux containing not less than 11.0 degrees and not more than 17.0 of a contact angle between the flux and a resist substrate on which the flux has been printed to have 1.0 mm of a diameter and 0.15 mm of a thickness when heating the resist substrate at 150 degrees C. for 30 seconds and cooling the resist substrate to a room temperature. The flux also contains more than zero seconds and not more than 2.0 seconds of a zero-cross time when heating a Cu plate at 150 degrees C. in a thermostat oven for 12 hours, applying the flux onto the baked Cu plate, and dipping the baked Cu plate onto which the flux is applied into a Sn-3.0Ag-0.5Cu alloy at a dipping speed of 15 mm/sec and by 2.0 mm of a dipped depth.