Abstract: While a winding member is making one rotation, an optical fiber is once skewed relative to the circumferential direction and further shifted by a desired length in the width direction of a circumferential surface. In this state, the winding member winds up the optical fiber. This operation is performed in the same direction every rotation when the winding member rotates (N?1) times. Next, in the N-th rotation of the winding member, a guide member performs the guide to the optical fiber to skew reversely to the direction of shifting in the (N?1) rotations of the winding member.

Abstract: A heat treatment method of an impeller includes a heat treatment preparation process of arranging the impeller within a vacuum furnace, an impeller covering process of covering an outer peripheral surface of the impeller in a circumferential direction by a heat uniformizing jig made of a radiation conversion material which radiates transferred heat as radiant heat, and a heat treatment process including a heating process and a cooling process in which heat treatment is performed by heating or cooling the impeller covered with the heat uniformizing jig from the periphery using a heater.

Abstract: While a winding member is making one rotation, an optical fiber is once skewed relative to the circumferential direction and further shifted by a desired length in the width direction of a circumferential surface. In this state, the winding member winds up the optical fiber. This operation is performed in the same direction every rotation when the winding member rotates (N?1) times. Next, in the N-th rotation of the winding member, a guide member performs the guide to the optical fiber to skew reversely to the direction of shifting in the (N?1) rotations of the winding member.

Abstract: A heat treatment method of an impeller includes a heat treatment preparation process of arranging the impeller within a vacuum furnace, an impeller covering process of covering an outer peripheral surface of the impeller in a circumferential direction by a heat uniformizing jig made of a radiation conversion material which radiates transferred heat as radiant heat, and a heat treatment process including a heating process and a cooling process in which heat treatment is performed by heating or cooling the impeller covered with the heat uniformizing jig from the periphery using a heater.

Abstract: A method for manufacturing a machine component includes a process of estimating post-heat-treatment strength for the intermediate form of a base material after a certain mechanical working process is performed, and a process of comparing the estimated strength with reference strength required for a final form. According to a result of the comparison, heat treatment of the base material is performed after one of the mechanical working processes is performed.

Abstract: A method for manufacturing an impeller includes providing a disc and a cover separate from the disc, one of the cover and the disc having integrally formed blades and the other one of cover and the disc having a first joint surface, joining the disc and the cover to each other by brazing in a state in which a first brazing filler metal is interposed between the first joint surface and a second joint surface provided on the blades, and during the joining operation, maintaining a space between the first joint surface and the second joint surface by providing a spacer on an outer periphery side of the impeller. The thickness of the spacer is smaller than the thickness of the first brazing filler metal before melting. The spacer is formed integrally with the blade or is formed integrally with said other one of the cover and the disc.

Abstract: The invention provides a semiconductor storage device which can restrain the uneven high voltage applied to the storage unit and can provide the high voltage with high precision. The semiconductor storage device includes a storage unit array, a Y decoder circuit, a X decoder circuit, a sense amplifier circuit, a Y gate circuit, a high voltage generating circuit, a high voltage regulator circuit, and a voltage adjusting circuit. The voltage modifying data for adjusting the potential of the anode of the zener diode so as to adjust the high voltage applied to the storage unit array is written into the storage unit array. The voltage modifying data is used to adjust voltage by the voltage adjusting circuit.

Abstract: Provided is a method for manufacturing an optical fiber that is inserted into an insertion portion of an endoscope and guides light, wherein inside an upright fiber drawing furnace, inside a hollow clad tube including a clad glass having a viscosity ?1 of 5.0<Log ?1<7.0 at a temperature at which a viscosity ?2 of a core glass becomes Log ?2=3.5, the core glass in a fluidized state runs down by gravity, whereby the core glass and the clad glass are integrated.

Abstract: Provided is a method for manufacturing an optical fiber that is inserted into an insertion portion of an endoscope and guides light, wherein inside an upright fiber drawing furnace, inside a hollow clad tube including a clad glass having a viscosity ?1 of 5.0<Log ?1<7.0 at a temperature at which a viscosity ?2 of a core glass becomes Log ?2=3.5, the core glass in a fluidized state runs down by gravity, whereby the core glass and the clad glass are integrated.

Abstract: The invention provides a semiconductor storage device which can restrain the uneven high voltage applied to the storage unit and can provide the high voltage with high precision. The semiconductor storage device includes a storage unit array, a Y decoder circuit, a X decoder circuit, a sense amplifier circuit, a Y gate circuit, a high voltage generating circuit, a high voltage regulator circuit, and a voltage adjusting circuit. The voltage modifying data for adjusting the potential of the anode of the zener diode so as to adjust the high voltage applied to the storage unit array is written into the storage unit array. The voltage modifying data is used to adjust voltage by the voltage adjusting circuit.

Abstract: Memory cells of a storage device are addressed in n-bit word(s). Each of the n-bit word memory cells are partitioned into k (k≧2) groups of n/k bits. The memory cells are sequentially selected in n/k bits. Data of the selected n/k bit memory cells are read by n/k sense amplifiers and serially output from the storage device as readout data. The storage device requires much less chip area for n/k sense amplifiers and reduced peak currents in a read operation.

Abstract: Memory cells of a storage device are addressed in n-bit word(s). Each of the n-bit word memory cells are partitioned into k (k≧2) groups of n/k bits. The memory cells are sequentially selected in n/k bits. Data of the selected n/k bit memory cells are read by n/k sense amplifiers and serially output from the storage device as readout data. The storage device requires much less chip area for n/k sense amplifiers and reduced peak currents in a read operation.

Abstract: A semiconductor memory has a main memory and an ID memory, of which both store data in a nonvolatile memory. The data stored in the ID memory is compared with data entered from outside by a verifying circuit. Whether access to the main memory is permitted or not depends on the result of the verification by the verifying circuit. The operation code for accessing the ID memory is different from the operation code for accessing the main memory. The operation code for the ID memory is changed in accordance with the data stored in the ID memory.