Abstract: A display device includes a TFT layer provided with a terminal configured to receive a signal inputted from an external source, and a terminal wiring line in a lower layer underlying the terminal, and a light emitting element layer in an upper layer overlying the TFT layer. The terminal includes a main portion and a peripheral portion surrounding the main portion. The peripheral portion is covered by a cover film, the terminal wiring line and a lower face of the peripheral portion are in contact, and the main portion and the terminal wiring line overlap via at least one terminal base film.

Abstract: A portion of a resin film is precisely cut out when the resin film is peeled off. A rear surface of a glass substrate on which a protrusion is formed is irradiated with a laser beam to peel a resin film from the glass substrate. Then, the protrusion and the resin film formed on the protrusion are left on the glass substrate.

Abstract: A display device including: a plurality of subpixels (SP) each including (i) a first electrode (22), (ii) a bank (23) covering an edge of the first electrode, (iii) an EL layer (24) provided in a layer higher than the first electrode, and (iv) a second electrode (25) provided in a layer higher than the EL layer, the bank having a first sloped part (23x) and a second sloped part (23y), the second sloped part having an inclination smaller than that of the first sloped part.

Abstract: A first weir wall and a second weir wall are formed in a frame region, the first weir wall being made of a material of a planarizing film and being formed so as to surround a display region and to overlap a peripheral end of an organic layer of a sealing film, and the second weir wall being made of a material of an edge cover and being formed around the first weir wall so as to overlap an edge of the peripheral end of the organic layer. The first weir wall has a groove formed in its upper surface so as to extend around the display region.

Abstract: In a display region of a display device, opening portions are formed in at least one layer of an inorganic insulating film making up a TFT layer in such a manner as to penetrate the inorganic insulating film to thereby expose an upper surface of a resin substrate, opening flattening films are provided in such a manner as to fill in the opening portions, and metallic layers are provided in such a manner as to cover upper surfaces of the opening flattening films.

Abstract: A display device production method for producing a display device including a light emitting element in an active region and a terminal in a non-active region. The display device production method includes arranging a first mask overlapping with an electrode region of the light emitting element and a second mask overlapping with the terminal, on a conductive film that is arranged in the active region and the non-active region and that covers the terminal, and etching the conductive film.

Abstract: The photomask includes: transmissive portions configured to form the opening portion, a semi-transmitted light portion configured to form the planar portion, and a light blocking portion configured to form each of the plurality of photo spacer portions. The light blocking portion is formed in an island shape between the transmissive portions arranged in a lattice shape, and an end portion of the light blocking portion is formed to extend, between two of the transmissive portions, along outer edges of the two of the transmissive portions.

Abstract: A first damming wall and a second damming wall are provided in a frame region. The first damming wall surrounds a display region formed from a first organic material and overlaps with a circumferential end part of an organic layer. The second damming wall includes a top part formed from a second organic material in the periphery of the first damming wall, and overlaps with an edge of the circumferential end part of the organic layer. The second damming wall includes a bottom part located closer to a base substrate, the bottom part being formed from a material constituting parts of switching elements.

Abstract: A display device is provided that may prevent peeling of a sealing layer between a first partition and a second partition formed at an end portion of the sealing layer that seals a light emitting layer. An organic EL display device includes a sealing layer that is configured to seal a light emitting element layer and is doubly enclosed at an end portion by a first bank and a second bank that is formed more on the outer side than the first bank with a gap in between. An outer side wall surface of the first bank facing the second bank is formed as a gentle slope with an inclination angle smaller than an inner side wall surface of the first bank on the side opposite to the second bank.

Abstract: Disclosed is a semiconductor device which includes a substrate 11, a thin film transistor 20 having a first semiconductor layer 16A that is supported by the substrate 11, a thin film diode 30 having a second semiconductor layer 16B that is supported by the substrate 11, and a metal layer 12 that is formed between the substrate 11 and the second semiconductor layer 16B. The first semiconductor layer 16A is a laterally grown crystalline semiconductor film, and the second semiconductor layer 16B is a crystalline semiconductor film that contains fine crystal grains. The average surface roughness of the second semiconductor layer 16B is higher than the average surface roughness of the first semiconductor layer 16A. Consequently, the optical sensitivity of the TFD is improved and the reliability of the TFT is improved, as compared with those in the conventional semiconductor devices.

Abstract: Disclosed is a semiconductor device which includes a substrate 11, a thin film transistor 20 having a first semiconductor layer 16A that is supported by the substrate 11, a thin film diode 30 having a second semiconductor layer 16B that is supported by the substrate 11, and a metal layer 12 that is formed between the substrate 11 and the second semiconductor layer 16B. The first semiconductor layer 16A is a laterally grown crystalline semiconductor film, and the second semiconductor layer 16B is a crystalline semiconductor film that contains fine crystal grains. The average surface roughness of the second semiconductor layer 16B is higher than the average surface roughness of the first semiconductor layer 16A. Consequently, the optical sensitivity of the TFD is improved and the reliability of the TFT is improved, as compared with those in the conventional semiconductor devices.

Abstract: A substrate processing apparatus for processing a substrate With a processing fluid is provided. The apparatus includes holding members 60 for holding the substrate W, a chuck member 61 for supporting the holding members 60 and a top-face member 62 approaching the substrate W to cover its surface. In arrangement, since the top-face member 62 is supported by the chuck member 61, the holding members 60 can rotate together with the top-face member 62 in one body. With this structure, it is possible to reduce the influence of particles on the substrate W and also possible to provided a low-cost substrate processing apparatus occupied as little installation space as possible.

Abstract: The prevent invention provides a substrate processing apparatus and a substrate processing method which can process hydrophobic wafers with a fluid mixing nozzle. The substrate processing apparatus comprises processing liquid supply means 66 for supplying a processing liquid, inert gas supply means 67 for supplying an inert gas, and a fluid mixing nozzle 65 for mixing the processing liquid with the inert gas to eject the mixed processing liquid to the substrate, whereby the substrate is processed with the processing liquid, in which the inert gas supply means 67 comprises liquid mixing means 97b for mixing a fluid, IPA, for lowering surface tension of the processing liquid, and the inert gas.

Abstract: An edge remover is provided in the vicinity of an edge portion of a wafer subjected to copper plating. An aqueous hydrogen peroxide is supplied to the edge portion of the wafer from a first nozzle provided at an inner side for a radial direction of the wafer. Next, diluted hydrofluoric acid is supplied to the edge portion of the wafer from a second nozzle provided at an outer side for the radial direction thereof.

Abstract: Liquid treatment units are disposed in multi-tiers surrounding a main-arm 35. Among liquid treatment units, plating units M1 through M4 are disposed on a lower tier side, and a unit for post-treatment process such as a cleaning unit 70 where a cleaner atmosphere is necessary is disposed on an upper tier side. Thereby, an improvement in an area efficiency and the formation and maintenance of a clean atmosphere can be simultaneously obtained.

Abstract: A substrate processing apparatus for processing a substrate With a processing fluid is provided. The apparatus includes holding members 60 for holding the substrate W, a chuck member 61 for supporting the holding members 60 and a top-face member 62 approaching the substrate W to cover its surface. In arrangement, since the top-face member 62 is supported by the chuck member 61, the holding members 60 can rotate together with the top-face member 62 in one body. With this structure, it is possible to reduce the influence of particles on the substrate W and also possible to provided a low-cost substrate processing apparatus occupied as little installation space as possible.

Abstract: This substrate processing device is identical to a wafer cleaning device 5 for cleaning a wafer W, which includes a supply nozzle 34 for supplying APM and the pure water, a spin chuck 31 for carrying the wafer W and a container 31 for accommodating the spin chuck 31. The container 30 includes an inner processing chamber 42 and an outer processing chamber 43 and is constructed so as to be movable up and down to the spin chuck 31. A first drainage line 50 is connected to the inner processing chamber 42 to discharge APM and the interior atmosphere, while a second drainage line 51 is connected to the outer processing chamber 43 to discharge pure water and the interior atmosphere. With the connection of the first drainage line 50, the wafer cleaning device 5 is adapted so that the supply nozzle 34 supplies APM to a surface of the wafer W again. Therefore, it is possible to reuse this processing liquid advantageously and additionally, an exhaust displacement can be reduced.

Abstract: The prevent invention provides a substrate processing apparatus and a substrate processing method which can process hydrophobic wafers with a fluid mixing nozzle.

Abstract: A substrate transporting method including inputting process data and determining whether a number of units required for processing a wafer is an odd number or an even number. Depending on the number of units required for processing the wafer, steps of transporting the wafer, taking out the wafer from a cassette section, loading the wafer, unloading the wafer and loading the wafer into a cassette section are performed via predetermined arms and with predetermined processing units.

Abstract: Disclosed is an apparatus for washing a substrate, comprising a spin chuck holding and rotating a substrate, a process solution supply mechanism having a solution discharge port through which a process solution is supplied onto the substrate rotated by the spin chuck so as to form a film of the process solution, an ultrasonic oscillator for applying an ultrasonic vibration to the film of the process solution, a relative moving mechanism for relatively moving the ultrasonic oscillator and the spin chuck so as to adjust the relative positions of the ultrasonic oscillator and the substrate, and controller for controlling each of the spin chuck, process solution supply mechanism, ultrasonic oscillator and relative moving mechanism so as to permit the ultrasonic oscillator, which extends to cover substantially a radius of the substrate, to be in contact with the film of the process solution but not to be in contact with the substrate and so as to make optimum the relationship among a gap G between the ultrasonic o