Abstract: A method of manufacturing a light-emitting device including a light-emitting element mounted on a substrate and sealed with a glass. The method includes heating the glass by a first mold that is heated to a temperature higher than a yield point of the glass, the glass contacting the first mold, and pressing the glass against the light-emitting element mounted on the substrate supported by a second mold to seal the light-emitting element with the glass.

Abstract: A method and apparatus that deterioration of the flow state of a coal/kerosene slurry while preventing the damage caused by overloading to thereby achieve excellent solid-liquid separation performance. In a solid-liquid separation supplying a dehydrated coal/kerosene slurry to a decanter-type centrifugal separator to separate the coal/kerosene slurry into a solid fraction and a liquid fraction, an opening degree target value is determined on the basis of the difference between a target value and an actually measured value of a torque that acts on a screw conveyor of the decanter-type centrifugal separator, and the opening degree of a flow volume control valve, which is arranged in the middle of a supply line for supplying the coal/kerosene slurry into the decanter-type centrifugal separator, is adjusted to the opening degree target value.

Abstract: To provide an optical system that lengthens the lifetime of a fiber, an optical system 13 guides light beams emitted from a plurality of light emitting parts ep into a single optical fiber 12, the plurality of light emitting parts ep are arranged to be aligned along a first direction d1, and the optical system 13 allows the light beams emitted from the plurality of light emitting parts ep to have different light collection centers which are offset from each other at least in a second direction d2.

Abstract: A silicon carbide single crystal includes a spiral dislocation. The spiral dislocation includes a L dislocation having a burgers vector defined as b, which satisfies an equation of b><0001>+1/3<11-20>. The L dislocation has a density equal to or lower than 300 dislocations/cm2, preferably, 100 dislocations/cm2, since the L dislocation has large distortion and causes generation of leakage current. Thus, the silicon carbide single crystal with high quality is suitable for a device production which can suppress the leakage current.

Abstract: The purpose of the present invention is to provide an indirect heat drying method and a refined-coal production method, with which the stability of carrier-gas pressure balance can be improved when using indirect heat dryers to dry particulate matter. This indirect heat drying method for particulate matter uses two indirect heat dryers, and is provided with: a step (A) in which particulate matter is dried in a first indirect heat dryer; and a step (B) in which the particulate matter is further dried in a second indirect heat dryer to obtain dried particulate matter.

Abstract: The purpose of the present invention is to provide a refined-coal production method and a refined-coal production device, which exhibit excellent operability, and with which droplets accompanying steam generated when dehydrating moisture-containing coal is efficiently removed. This refined-coal production method is provided with: a step (A) in which a mixture including moisture-containing coal and oil is heated to dehydrate the coal; a step (B) in which droplets accompanying steam generated by performing dehydration are removed; and a step (C) in which steam, having had the droplets removed therefrom, is compressed to obtain high-temperature steam. The refined-coal production method is characterized in that, in step (B), the steam is sequentially passed through one or a plurality of mist separators, and removal of the droplets is performed while liquid is being sprayed onto a first mist separator through which the steam passes firstly.

Abstract: In a method of manufacturing a silicon carbide single crystal, a silicon carbide substrate having a surface of one of a (11-2n) plane and a (1-10n) plane, where n is any integer number greater than or equal to 0, is prepared. An epitaxial layer having a predetermined impurity concentration is grown on the one of the (11-2n) plane and the (1-10n) plane of the silicon carbide substrate by a chemical vapor deposition method so that a threading dislocation is discharged from a side surface of the epitaxial layer. A silicon carbide single crystal is grown into a bulk shape by a sublimation method on the one of the (11-2n) plane and the (1-10n) plane of the epitaxial layer from which the threading dislocation is discharged.

Abstract: A fuel injection control system for an internal combustion engine is provided which is designed to perform pilot injection of fuel into the engine through a fuel injector prior to main injection. The system monitors a combustion state parameter representing a combustion state of the fuel within a combustion chamber of the engine which has been sprayed in the event of the pilot injection. When the combustion state parameter is determined as lying out of a stable combustion range where the fuel is to burn stably, the system changes the number of pilot injections to be executed prior to the main injection and/or the quantity of the fuel to be sprayed in each pilot injection, thereby enhancing the ignitability of the fuel in the pilot injection.

Abstract: An electronic module with excellent electrical characteristics includes an electronic component, a mount board, signal electrodes, a ground electrode, and an insulating layer. The electronic component is mounted on a first main surface of the mount board. The signal electrodes and the ground electrode are located on a second main surface of the mount board. The insulating layer is arranged so as to cover a portion of the second main surface of the mount board. The insulating layer is arranged so as not to cover end portions of the signal electrodes that face the ground electrode.

Abstract: An electrically conductive path is configured from a first copper plate, a second copper plate, and solder. The first copper plate has a first bent section extended from a first joining section joined to an electrically insulative board and bent toward the rear surface of the electrically insulative board. The second copper plate has a second bent section which is extended from a second joining section joined to the electrically insulative board, is bent toward the front surface of the electrically insulative board, and is disposed so as to cover, together with the first bent section, the inner wall surface of a base-material through-hole. Through-holes are provided in the portions of the second copper plate which face the inside of the base-material through-hole. Solder is filled between the first bent section and the second bent section.

Abstract: A method of making a solid element device that includes a solid element, an element mount part on which the solid element is mounted and which has a thermal conductivity of not less than 100 W/mK, an external terminal provided separately from the element mount part and electrically connected to the solid element, and a glass sealing part directly contacting and covering the solid element for sealing the solid element, includes pressing a glass material at a temperature higher than a yield point of the glass material for forming the glass sealing part.

Abstract: The invention provides a spring product manufacturing line comprising: a manufacturing area 2 at which a formation device 50 attached to a base mount 52 plastically processes a spring material into a spring product; a formation device switching area 3 at which one formation device 50 is removed from the mount 52 and switched with another forming device 50; and a formation device transport line 4 that conveys a formation device 50 attached to a base mount 52 at the device switching area 3 to a manufacturing area 2; wherein the formation device 50 is provided with a plurality of formation units 54 that perform a bending process on the spring material by fluid pressure; the base mount 52 is provided with a pressure fluid line 62 that supplies pressure fluid to the formation units 54 provided at the formation device 50, and that is removably connected to each of the formation units 54; and the attachment or removal of the pressure fluid line 62 with respect to the formation device 50 is performed at the device sw

Abstract: A SiC semiconductor device includes: a SiC substrate including a first or second conductive type layer and a first conductive type drift layer and including a principal surface having an offset direction; a trench disposed on the drift layer and having a longitudinal direction; and a gate electrode disposed in the trench via a gate insulation film. A sidewall of the trench provides a channel formation surface. The vertical semiconductor device flows current along with the channel formation surface of the trench according to a gate voltage applied to the gate electrode. The offset direction of the SiC substrate is perpendicular to the longitudinal direction of the trench.

Abstract: A manufacturing method of an SiC single crystal includes preparing an SiC substrate, implanting ions into a surface portion of the SiC substrate to form an ion implantation layer, activating the ions implanted into the surface portion of the SiC substrate by annealing, chemically etching the surface portion of the SiC substrate to form an etch pit that is caused by a threading screw dislocation included in the SiC substrate and performing an epitaxial growth of SiC to form an SiC growth layer on a surface of the SiC substrate including an inner wall of the etch pit in such a manner that portions of the SiC growth layer grown on the inner wall of the etch pit join with each other.

Abstract: A direction of a dislocation line of a threading dislocation is aligned, and an angle between the direction of the dislocation line of the threading dislocation and a [0001]-orientation c-axis is equal to or smaller than 22.5 degrees. The threading dislocation having the dislocation line along with the [0001]-orientation c-axis is perpendicular to a direction of a dislocation line of a basal plane dislocation. Accordingly, the dislocation does not provide an extended dislocation on the c-face, so that a stacking fault is not generated. Thus, when an electric device is formed in a SiC single crystal substrate having the direction of the dislocation line of the threading dislocation, which is the [0001]-orientation c-axis, a SiC semiconductor device is obtained such that device characteristics are excellent without deterioration, and a manufacturing yield ration is improved.

Abstract: A fuel injection control system for an internal combustion engine is provided which is designed to perform pilot injection of fuel into the engine through a fuel injector prior to main injection. The system monitors a combustion state parameter representing a combustion state of the fuel within a combustion chamber of the engine which has been sprayed in the event of the pilot injection. When the combustion state parameter is determined as lying out of a stable combustion range where the fuel is to burn stably, the system changes the number of pilot injections to be executed prior to the main injection and/or the quantity of the fuel to be sprayed in each pilot injection, thereby enhancing the ignitability of the fuel in the pilot injection.

Abstract: An electronic module with excellent electrical characteristics includes an electronic component, a mount board, signal electrodes, a ground electrode, and an insulating layer. The electronic component is mounted on a first main surface of the mount board. The signal electrodes and the ground electrode are located on a second main surface of the mount board. The insulating layer is arranged so as to cover a portion of the second main surface of the mount board. The insulating layer is arranged so as not to cover end portions of the signal electrodes that face the ground electrode.

Abstract: A SiC semiconductor device includes: a SiC substrate including a first or second conductive type layer and a first conductive type drift layer and including a principal surface having an offset direction; a trench disposed on the drift layer and having a longitudinal direction; and a gate electrode disposed in the trench via a gate insulation film. A sidewall of the trench provides a channel formation surface. The vertical semiconductor device flows current along with the channel formation surface of the trench according to a gate voltage applied to the gate electrode. The offset direction of the SiC substrate is perpendicular to the longitudinal direction of the trench.

Abstract: A method of making a solid element device that includes a solid element, an element mount part on which the solid element is mounted and which has a thermal conductivity of not less than 100 W/mK, an external terminal provided separately from the element mount part and electrically connected to the solid element, and a glass sealing part directly contacting and covering the solid element for sealing the solid element, includes pressing a glass material at a temperature higher than a yield point of the glass material for forming the glass sealing part.

Abstract: A manufacturing method of an SiC single crystal includes preparing an SiC substrate, implanting ions into a surface portion of the SiC substrate to form an ion implantation layer, activating the ions implanted into the surface portion of the SiC substrate by annealing, chemically etching the surface portion of the SiC substrate to form an etch pit that is caused by a threading screw dislocation included in the SiC substrate and performing an epitaxial growth of SiC to form an SiC growth layer on a surface of the SiC substrate including an inner wall of the etch pit in such a manner that portions of the SiC growth layer grown on the inner wall of the etch pit join with each other.