Patents by Inventor Hiroko Abe

Hiroko Abe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7781758
    Abstract: It is an object of the present invention to provide a semiconductor device in which data can be written except when manufacturing the semiconductor device and that counterfeits can be prevented. Moreover, it is another object of the invention to provide an inexpensive semiconductor device including a memory having a simple structure. The semiconductor device includes a field effect transistor formed over a single crystal semiconductor substrate, a first conductive layer formed over the field effect transistor, an organic compound layer formed over the first conductive layer, and a second conductive layer formed over the organic compound layer, and a memory element includes the first conductive layer, the organic compound, and the second conductive layer. According to the above structure, a semiconductor device which can conduct non-contact transmission/reception of data can be provided by possessing an antenna.
    Type: Grant
    Filed: October 13, 2005
    Date of Patent: August 24, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hiroko Abe, Yuji Iwaki, Mikio Yukawa, Shunpei Yamazaki, Yasuyuki Arai, Yasuko Watanabe, Yoshitaka Moriya
  • Publication number: 20100194266
    Abstract: An electroluminescent element which comprises host materials and guest materials in a part of an electroluminescent layer, and which is superior in device characteristics such as luminous efficiency and luminous characteristics to those of the conventional electroluminescent element is provided. According to the present invention, device characteristics (luminous efficiency, luminous characteristics, or the like) of an electroluminescent element is improved by using host materials and guest materials which have a common skeleton (represented by the following general formula 1) for an electroluminescent layer interposed between a pair of electrodes in the electroluminescent element. wherein R1 is a hydrogen atom, or the like, R2 to R5, each of which may be the same or different, are individually a hydrogen atom, or the like, and Ar1 is an aryl group which may have a substituent, or the like.
    Type: Application
    Filed: April 6, 2010
    Publication date: August 5, 2010
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Satoshi Seo, Hiroko Abe
  • Patent number: 7695828
    Abstract: An electroluminescent element which comprises host materials and guest materials in a part of an electroluminescent layer, and which is superior in device characteristics such as luminous efficiency and luminous characteristics to those of the conventional electroluminescent element is provided. According to the present invention, device characteristics (luminous efficiency, luminous characteristics, or the like) of an electroluminescent element is improved by using host materials and guest materials which have a common skeleton (represented by the following general formula 1) for an electroluminescent layer interposed between a pair of electrodes in the electroluminescent element. Formula 1 wherein R1 is a hydrogen atom, or the like, R2 to R5, each of which may be the same or different, are individually a hydrogen atom, or the like, and Ar1 is an aryl group which may have a substituent, or the like.
    Type: Grant
    Filed: March 16, 2004
    Date of Patent: April 13, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoshi Seo, Hiroko Abe
  • Patent number: 7688624
    Abstract: It is an object of the present invention to provide a volatile organic memory in which data can be written other than during manufacturing and falsification by rewriting can be prevented, and to provide a semiconductor device including such an organic memory. It is a feature of the invention that a semiconductor device includes a plurality of bit lines extending in a first direction; a plurality of word lines extending in a second direction different from the first direction; a memory cell array including a plurality of memory cells each provided at one of intersections of the bit lines and the word lines; and memory elements provided in the memory cells, wherein the memory elements include bit lines, an organic compound layer, and the word lines, and the organic compound layer includes a layer in which an inorganic compound and an organic compound are mixed.
    Type: Grant
    Filed: November 22, 2005
    Date of Patent: March 30, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hiroko Abe, Mikio Yukawa, Tamae Takano, Yoshinobu Asami, Kiyoshi Kato, Ryoji Nomura, Yoshitaka Moriya
  • Patent number: 7683532
    Abstract: The present invention provides a semiconductor device by which a light-emitting device that is unlikely to cause defects such as a short circuit, can be manufactured. One feature of a semiconductor device of the present invention is to include an electrode that serves as an electrode of a light-emitting element. The electrode includes a first layer and a second layer. Further, end portions of the electrode are covered with a partition layer having an opening portion. Moreover, a part of the electrode is exposed by the opening portion of the partition layer. One feature of a semiconductor device of the present invention is to include an electrode that serves as an electrode of a light-emitting element and a transistor. The electrode and the transistor are connected electrically to each other. The electrode includes a first layer and a second layer. Further, end portions of the electrode are covered with a partition layer having an opening portion.
    Type: Grant
    Filed: October 20, 2005
    Date of Patent: March 23, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hiroko Abe, Satoshi Seo, Shunpei Yamazaki
  • Publication number: 20100069636
    Abstract: Target is to provide an organic compound material having a bipolar character. A quinoxaline derivative represented by a general formula (1) is provided. In the formula, R1-R12 each independently represents a hydrogen atom, a halogen atom, a lower alkyl group, an alkoxy group, an acyl group, a nitro group, a cyano group, an amino group, a dialkylamino group, a diarylamino group, a vinyl group, an aryl group, or a heterocyclic residue group. R9 and R10, R10 and R11, and R11 and R12 are each independent or respectively mutually bonded to form an aromatic ring. Ar1-Ar4 each independently represents an aryl group or a heterocyclic residue group. Ar1, Ar2, Ar3 and Ar4 are each independent or Arl and Ar2, and Ar3 and Ar4 are respectively mutually bonded directly, or Ar1 and Ar3, and Ar3 and Ar4 are bonded via oxygen (O), sulfur (S) or a carbonyl group.
    Type: Application
    Filed: September 11, 2009
    Publication date: March 18, 2010
    Inventors: Satoko Shitagaki, Atsushi Tokuda, Hiroko Abe, Ryoji Nomura, Satoshi Seo
  • Publication number: 20100055896
    Abstract: It is an object of the present invention to provide a volatile organic memory in which data can be written other than during manufacturing and falsification by rewriting can be prevented, and to provide a semiconductor device including such an organic memory. It is a feature of the invention that a semiconductor device includes a plurality of bit lines extending in a first direction; a plurality of word lines extending in a second direction different from the first direction; a memory cell array including a plurality of memory cells each provided at one of intersections of the bit lines and the word lines; and memory elements provided in the memory cells, wherein the memory elements include bit lines, an organic compound layer, and the word lines, and the organic compound layer includes a layer in which an inorganic compound and an organic compound are mixed.
    Type: Application
    Filed: November 13, 2009
    Publication date: March 4, 2010
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Hiroko ABE, Mikio YUKAWA, Tamae TAKANO, Yoshinobu ASAMI, Kiyoshi KATO, Ryoji NOMURA, Yoshitaka MORIYA
  • Publication number: 20100033090
    Abstract: A light emitting element of the invention includes n pieces of light emitting layers (n is a natural number) between first and second electrodes. A first layer and a second layer are provided between the mth light emitting layer (m is a natural number of 1?m?n) and the m+1th light emitting layer. The first and second layers are contacted to each other. The first layer contain a substance that transports holes easily and a substance with an electron accepting property. The second layer contains a substance that transports electrons easily and a substance with an electron donating property. Molybdenum oxide is used as the substance with the electron accepting property.
    Type: Application
    Filed: September 21, 2009
    Publication date: February 11, 2010
    Inventors: Daisuke Kumaki, Hisao Ikeda, Hiroko Abe, Satoshi Seo
  • Patent number: 7622200
    Abstract: The present invention relates to a thin film light emitting element which has low drive voltage. In particular, the present invention relates to a thin film light emitting element which has low drive voltage and in which color purity and luminous efficiency are not deteriorated. A structure of a light emitting element of the present invention comprises at least an electron transporting layer, a light emitting layer containing a luminescent substance, a first region, and a second region are provided between electrodes, wherein the electron transporting layer includes the second region between the light emitting layer and the first region, the first region includes a substance containing a polycyclic condensed ring, and the second region does not include the substance containing a polycyclic condensed ring.
    Type: Grant
    Filed: May 18, 2005
    Date of Patent: November 24, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Nobuharu Ohsawa, Hiroko Abe
  • Patent number: 7622736
    Abstract: It is an object of the present invention to provide a volatile semiconductor device into which data can be additionally written and which is easy to manufacture, and a method for manufacturing the same. It is a feature of the present invention that a semiconductor device includes an element formation layer including a first transistor and a second transistor which are provided over a substrate; a memory element provided over the element formation layer; and a sensor portion provided above the memory element, wherein the memory element has a layered structure including a first conductive layer, and an organic compound layer, and a second conductive layer, the first conductive layer is electrically connected to the first transistor, and the sensor portion is electrically connected to the second transistor.
    Type: Grant
    Filed: December 1, 2005
    Date of Patent: November 24, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yoshitaka Moriya, Hiroko Abe, Mikio Yukawa, Ryoji Nomura
  • Patent number: 7605534
    Abstract: It is an object of the invention is to provide a light-emitting element in which failure of the light-emitting element due to separation can be controlled and stable luminescence can be obtained with high-efficiency and for a long stretch of time by controlling separation of layers constituting the light-emitting element. According to one aspect of a light-emitting element of the invention, the light-emitting element sandwiches a plurality of layers between a pair of electrodes, wherein at least one layer of the plurality of layers is a layer containing a substance selected from bismuth oxide, cobalt oxide, chromium oxide, copper oxide, nickel oxide, and titanium oxide, or at least one layer of layers different from a light-emitting layer among the plurality of layers is a mixed region of one substance selected from bismuth oxide, cobalt oxide, copper oxide, magnesium oxide, nickel oxide, zinc oxide, and titanium oxide and an organic compound.
    Type: Grant
    Filed: November 23, 2004
    Date of Patent: October 20, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Ryoji Nomura, Hiroko Abe
  • Patent number: 7601435
    Abstract: Target is to provide an organic compound material having a bipolar character. A quinoxaline derivative represented by a general formula (1) is provided. In the formula, R1-R12 each independently represents a hydrogen atom, a halogen atom, a lower alkyl group, an alkoxy group, an acyl group, a nitro group, a cyano group, an amino group, a dialkylamino group, a diarylamino group, a vinyl group, an aryl group, or a heterocyclic residue group. R9 and R10, R10 and R11, and R11 and R12 are each independent or respectively mutually bonded to form an aromatic ring. Ar1-Ar4 each independently represents an aryl group or a heterocyclic residue group. Ar1, Ar2, Ar3 and Ar4 are each independent or Ar1 and Ar2, and Ar3 and Ar4 are respectively mutually bonded directly, or Ar1 and Ar3, and Ar3 and Ar4 are bonded via oxygen (O), sulfur (S) or a carbonyl group.
    Type: Grant
    Filed: April 16, 2004
    Date of Patent: October 13, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoko Shitagaki, Atsushi Tokuda, Hiroko Abe, Ryoji Nomura, Satoshi Seo
  • Patent number: 7598670
    Abstract: A light emitting element of the invention includes n pieces of light emitting layers (n is a natural number) between first and second electrodes. A first layer and a second layer are provided between the mth light emitting layer (m is a natural number of 1?m?n) and the m+1th light emitting layer. The first and second layers are contacted to each other. The first layer contains a substance that transports holes easily and a substance with an electron accepting property. The second layer contains a substance that transports electrons easily and a substance with an electron donating property. Molybdenum oxide is used as the substance with the electron accepting property.
    Type: Grant
    Filed: May 17, 2005
    Date of Patent: October 6, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Daisuke Kumaki, Hisao Ikeda, Hiroko Abe, Satoshi Seo
  • Publication number: 20090179549
    Abstract: It is an object of the invention to achieve weight saving and downsizing of an electronic apparatus, in particular a portable electronic apparatus while enlarging a display screen thereof. The invention provides an electronic apparatus using a light emitting device which includes a light emitting element, a color filter provided on either side of an anode or a cathode of the light emitting element, and two polarizers sandwiching the light emitting element and the color filter, in which the anode and the cathode transmit light, deflection angles of the two polarizers are different from each other, and light obtained from the light emitting element is white.
    Type: Application
    Filed: December 30, 2008
    Publication date: July 16, 2009
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hiroko Abe, Mitsuaki Osame, Aya Anzai, Yu Yamazaki, Yoshifumi Tanada, Shunpei Yamazaki
  • Publication number: 20090174333
    Abstract: A display device where the influence of variations in current of the light emitting element due to changes in ambient temperature and changes with time can be suppressed. The display device of the invention has a light emitting element, a driving transistor connected in series to the light emitting element, a monitoring light emitting element, a limiter transistor connected in series to the monitoring light emitting element, a constant current source for supplying a constant current to the monitoring light emitting element, and a circuit for outputting a potential equal to an inputted potential. A first electrode of the light emitting element is connected to an output terminal of the circuit through the driving transistor, and a first electrode of the monitoring light emitting element is connected to an input terminal of the circuit through the limiter transistor.
    Type: Application
    Filed: January 5, 2009
    Publication date: July 9, 2009
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Masahiko Hayakawa, Yu Yamazaki, Yukari Ando, Keisuke Miyagawa, Jun Koyama, Mitsuaki Osame, Aya Anzai, Shunpei Yamazaki, Satoshi Seo, Hiroko Abe
  • Publication number: 20090140634
    Abstract: A layer included in an electroluminescent element is required to be thickened to optimize light extraction efficiency of the electroluminescent element and to prevent short-circuit between electrodes. However, in a conventional element material, desired light extraction efficiency cannot be accomplished since drive voltage rises or power consumption is increased as the element material is thickened. A composite is formed by mixing a conjugated molecule having low ionization potential and a substance having an electron-accepting property to the conjugated molecule. A composite layer included in an element is formed using the composite as an element material. The composite layer is arranged between a first electrode and a light emitting layer or between a second electrode and a light emitting layer. The composite layer has high conductivity; therefore, drive voltage does not rise even if a film thickness is increased.
    Type: Application
    Filed: November 24, 2005
    Publication date: June 4, 2009
    Inventors: Ryoji Nomura, Satoshi Seo, Hiroko Abe, Takako Takasu, Hideko Inoue, Hisao Ikeda, Daisuke Kumaki, Junichiro Sakata
  • Patent number: 7541098
    Abstract: A light-emitting organic compound that is superior in electrochemical stability, chemical stability, and thermal stability is provided. The compound also, shows blue luminescence with favorable color purity, and is represented by the following general formula (1). In the formula, X1 represents a silyl group in which one or more aryl groups having 5 to 10 carbon atoms are bound to silicon or an alkyl group having 1 to 4 carbon atoms. Ar1 represents an unsubstituted or substituted aryl group having 5 to 15 carbon atoms. Ar2 represents an aryl group having 5 to 20 carbon atoms, and may have a substituent at a site different from a binding site to Ar1.
    Type: Grant
    Filed: July 26, 2004
    Date of Patent: June 2, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Ryoji Nomura, Atsushi Tokuda, Hiroko Abe, Satoshi Seo
  • Publication number: 20090121874
    Abstract: The present invention provides a semiconductor device including a memory that has a memory cell array including a plurality of memory cells, a control circuit that controls the memory, and an antenna, where the memory cell array has a plurality of bit lines extending in a first direction and a plurality of word lines extending in a second direction different from the first direction, and each of the plurality of memory cells has an organic compound layer provided between the bit line and the word line. Data is written by applying optical or electric action to the organic compound layer.
    Type: Application
    Filed: January 7, 2009
    Publication date: May 14, 2009
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Ryoji NOMURA, Hiroko ABE, Yuji IWAKI, Shunpei YAMAZAKI
  • Patent number: 7522644
    Abstract: A laser oscillator is disclosed by means of current excitation by using a light-emitting element containing an organic matter. The present invention is a semiconductor device oscillating laser by current excitation comprising a light-emitting element having a laminated body which is formed by stacking sequentially a first layer made from an organic matter, a second layer containing an organic matter and a metal compound, and a third layer made from an organic matter interposed; and a first electrode and a second electrode formed over a substrate, the electrodes interposing the laminated body therebetween; wherein the organic matter contained in the second layer includes at least a light-emitting material.
    Type: Grant
    Filed: December 5, 2005
    Date of Patent: April 21, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hiroko Abe, Satoshi Seo
  • Patent number: 7505487
    Abstract: To provide a laser oscillator that has an oscillation wavelength in a visible region, and can enhance a conversion efficiency of photon output, and further suppress power consumption. The laser oscillator comprises a light emitting element formed on a substrate, and an optical resonator. The light emitting element includes a luminescent layer, an anode and a cathode, in which the luminescent layer is interposed between the anode and the cathode. The luminescent layer comprises a host material and a phosphorescent material, which is dispersed into the host material at a concentration of not smaller than 10 wt %. The anode and the cathode comprises a light transmitting property. In luminescence from the excimer state of the phosphorescent material, unidirectional light that intersects with the luminescent layer is amplified by the optical resonator.
    Type: Grant
    Filed: April 12, 2004
    Date of Patent: March 17, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hiroko Abe, Akihisa Shimomura, Satoshi Seo, Shunpei Yamazaki