Patents by Inventor Hiroko Iguchi
Hiroko Iguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10868124Abstract: A group III nitride semiconductor substrate may include: a p-type conduction region into which a group II element has been implanted in a depth direction of the group III nitride semiconductor substrate from a surface of the group III nitride semiconductor substrate, the p-type conduction region having p-type conductivity, wherein hydrogen has been implanted from the p-type conduction region across an n-type conduction region adjacent to the p-type conduction region in the depth direction of the group III nitride semiconductor substrate.Type: GrantFiled: December 3, 2018Date of Patent: December 15, 2020Assignee: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHOInventors: Hiroko Iguchi, Tetsuo Narita
-
Patent number: 10727517Abstract: A solid oxide fuel cell includes an Si support substrate having a through hole, an electrolyte film formed on the surface of an Si support substrate and containing a solid oxide having oxygen ion conductivity, a first electrode formed on a surface of the electrolyte film (surface on the side opposite to the Si support substrate), and a second electrode formed at least on a surface exposed from the through hole in a rear face of the electrolyte film. The electrolyte film includes a porous layer including the solid oxide and containing pores inside, a first dense layer formed on a surface of the porous layer (surface on the side opposite to the Si support substrate), and a second dense layer formed at the interface between a rear face of the porous layer and the Si support substrate.Type: GrantFiled: December 20, 2017Date of Patent: July 28, 2020Assignee: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHOInventors: Hidehito Matsuo, Teruhisa Akashi, Hirofumi Funabashi, Hiroko Iguchi, Shigeo Hori, Toshihiko Tani
-
Patent number: 10727494Abstract: A solid oxide fuel cell is disclosed herein. The fuel cell includes a silicon substrate, an electrolyte film laminated on the silicon substrate, and a gas flow path formed inside the silicon substrate. The electrolyte film is opposed to the gas flow path via an electrode film. A portion of a side wall of the gas flow path has a fillet shape, and the portion is close to the electrolyte film.Type: GrantFiled: February 23, 2018Date of Patent: July 28, 2020Assignee: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHOInventors: Teruhisa Akashi, Hirofumi Funabashi, Hiroko Iguchi, Hidehito Matsuo, Shigeo Hori
-
Patent number: 10637078Abstract: A fuel cell disclosed herein may comprise: a substrate provided with a recess through which fuel gas passes; an electrolyte membrane covering an opening of the recess; an insulating film covering one surface of the electrolyte membrane and having a through hole reaching the electrolyte membrane; a first electrode in contact with the one surface of the electrolyte membrane in the through hole; a second electrode in contact with the other surface of the electrolyte membrane; and a heater disposed in the insulating film at a position adjacent to the through hole.Type: GrantFiled: February 8, 2018Date of Patent: April 28, 2020Assignee: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHOInventors: Hirofumi Funabashi, Teruhisa Akashi, Hiroko Iguchi, Hidehito Matsuo, Shigeo Hori
-
Publication number: 20190181230Abstract: A group III nitride semiconductor substrate may include: a p-type conduction region into which a group II element has been implanted in a depth direction of the group III nitride semiconductor substrate from a surface of the group III nitride semiconductor substrate, the p-type conduction region having p-type conductivity, wherein hydrogen has been implanted from the p-type conduction region across an n-type conduction region adjacent to the p-type conduction region in the depth direction of the group III nitride semiconductor substrate.Type: ApplicationFiled: December 3, 2018Publication date: June 13, 2019Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHOInventors: Hiroko IGUCHI, Tetsuo NARITA
-
Publication number: 20180277874Abstract: A solid oxide fuel cell includes an Si support substrate having a through hole, an electrolyte film formed on the surface of an Si support substrate and containing a solid oxide having oxygen ion conductivity, a first electrode formed on a surface of the electrolyte film (surface on the side opposite to the Si support substrate), and a second electrode formed at least on a surface exposed from the through hole in a rear face of the electrolyte film. The electrolyte film includes a porous layer including the solid oxide and containing pores inside, a first dense layer formed on a surface of the porous layer (surface on the side opposite to the Si support substrate), and a second dense layer formed at the interface between a rear face of the porous layer and the Si support substrate.Type: ApplicationFiled: December 20, 2017Publication date: September 27, 2018Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHOInventors: Hidehito MATSUO, Teruhisa AKASHI, Hirofumi FUNABASHI, Hiroko IGUCHI, Shigeo HORI, Toshihiko TANI
-
Publication number: 20180277855Abstract: A solid oxide fuel cell is disclosed herein. The fuel cell includes a silicon substrate, an electrolyte film laminated on the silicon substrate, and a gas flow path formed inside the silicon substrate. The electrolyte film is opposed to the gas flow path via an electrode film. A portion of a side wall of the gas flow path has a fillet shape, and the portion is close to the electrolyte film.Type: ApplicationFiled: February 23, 2018Publication date: September 27, 2018Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHOInventors: Teruhisa AKASHI, Hirofumi FUNABASHI, Hiroko IGUCHI, Hidehito MATSUO, Shigeo HORI
-
Publication number: 20180248205Abstract: A fuel cell disclosed herein may comprise: a substrate provided with a recess through which fuel gas passes; an electrolyte membrane covering an opening of the recess; an insulating film covering one surface of the electrolyte membrane and having a through hole reaching the electrolyte membrane; a first electrode in contact with the one surface of the electrolyte membrane in the through hole; a second electrode in contact with the other surface of the electrolyte membrane; and a heater disposed in the insulating film at a position adjacent to the through hole.Type: ApplicationFiled: February 8, 2018Publication date: August 30, 2018Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHOInventors: Hirofumi FUNABASHI, Teruhisa AKASHI, Hiroko IGUCHI, Hidehito MATSUO, Shigeo HORI
-
Patent number: 8952449Abstract: There is known a semiconductor device in which an IGBT structure is provided in an IGBT area and a diode structure is provided in a diode area, the IGBT area and the diode area are both located within a same substrate, and the IGBT area is adjacent to the diode area. In this type of semiconductor device, a phenomenon that carriers accumulated within the IGBT area flow into the diode area when the IGBT structure is turned off. In order to prevent this phenomenon, a region of shortening lifetime of carriers is provided at least in a sub-area that is within said IGBT area and adjacent to said diode area. In the sub-area, emitter of IGBT structure is omitted.Type: GrantFiled: August 16, 2011Date of Patent: February 10, 2015Assignee: Toyota Jidosha Kabushiki KaishaInventors: Masaki Koyama, Yasushi Ookura, Akitaka Soeno, Tatsuji Nagaoka, Takahide Sugiyama, Sachiko Aoi, Hiroko Iguchi
-
Patent number: 8716746Abstract: In a semiconductor device, an IGBT cell includes a trench passing through a base layer of a semiconductor substrate to a drift layer of the semiconductor substrate, a gate insulating film on an inner surface of the trench, a gate electrode on the gate insulating film, a first conductivity-type emitter region in a surface portion of the base layer, and a second conductivity-type first contact region in the surface portion of the base layer. The IGBT cell further includes a first conductivity-type floating layer disposed within the base layer to separate the base layer into a first portion including the emitter region and the first contact region and a second portion adjacent to the drift layer, and an interlayer insulating film disposed to cover an end of the gate electrode. A diode cell includes a second conductivity-type second contact region in the surface portion of the base layer.Type: GrantFiled: August 9, 2011Date of Patent: May 6, 2014Assignees: DENSO CORPORATION, Toyota Jidosha Kabushiki KaishaInventors: Masaki Koyama, Yasushi Ookura, Akitaka Soeno, Tatsuji Nagaoka, Takahide Sugiyama, Sachiko Aoi, Hiroko Iguchi
-
Publication number: 20120043581Abstract: In a semiconductor device, an IGBT cell includes a trench passing through a base layer of a semiconductor substrate to a drift layer of the semiconductor substrate, a gate insulating film on an inner surface of the trench, a gate electrode on the gate insulating film, a first conductivity-type emitter region in a surface portion of the base layer, and a second conductivity-type first contact region in the surface portion of the base layer. The IGBT cell further includes a first conductivity-type floating layer disposed within the base layer to separate the base layer into a first portion including the emitter region and the first contact region and a second portion adjacent to the drift layer, and an interlayer insulating film disposed to cover an end of the gate electrode. A diode cell includes a second conductivity-type second contact region in the surface portion of the base layer.Type: ApplicationFiled: August 9, 2011Publication date: February 23, 2012Inventors: Masaki KOYAMA, Yasushi Ookura, Akitaka Soeno, Tatsuji Nagaoka, Takahide Sugiyama, Sachiko Aoi, Hiroko Iguchi
-
Publication number: 20120043582Abstract: There is known a semiconductor device in which an IGBT structure is provided in an IGBT area and a diode structure is provided in a diode area, the IGBT area and the diode area are both located within a same substrate, and the IGBT area is adjacent to the diode area. In this type of semiconductor device, a phenomenon that carriers accumulated within the IGBT area flow into the diode area when the IGBT structure is turned off. In order to prevent this phenomenon, a region of shortening lifetime of carriers is provided at least in a sub-area that is within said IGBT area and adjacent to said diode area. In the sub-area, emitter of IGBT structure is omitted.Type: ApplicationFiled: August 16, 2011Publication date: February 23, 2012Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Masaki KOYAMA, Yasushi OOKURA, Akitaka SOENO, Tatsuji NAGAOKA, Takahide SUGIYAMA, Sachiko AOI, Hiroko IGUCHI