Patents by Inventor Hiroko Iguchi

Hiroko Iguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10727517
    Abstract: A solid oxide fuel cell includes an Si support substrate having a through hole, an electrolyte film formed on the surface of an Si support substrate and containing a solid oxide having oxygen ion conductivity, a first electrode formed on a surface of the electrolyte film (surface on the side opposite to the Si support substrate), and a second electrode formed at least on a surface exposed from the through hole in a rear face of the electrolyte film. The electrolyte film includes a porous layer including the solid oxide and containing pores inside, a first dense layer formed on a surface of the porous layer (surface on the side opposite to the Si support substrate), and a second dense layer formed at the interface between a rear face of the porous layer and the Si support substrate.
    Type: Grant
    Filed: December 20, 2017
    Date of Patent: July 28, 2020
    Assignee: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
    Inventors: Hidehito Matsuo, Teruhisa Akashi, Hirofumi Funabashi, Hiroko Iguchi, Shigeo Hori, Toshihiko Tani
  • Patent number: 10727494
    Abstract: A solid oxide fuel cell is disclosed herein. The fuel cell includes a silicon substrate, an electrolyte film laminated on the silicon substrate, and a gas flow path formed inside the silicon substrate. The electrolyte film is opposed to the gas flow path via an electrode film. A portion of a side wall of the gas flow path has a fillet shape, and the portion is close to the electrolyte film.
    Type: Grant
    Filed: February 23, 2018
    Date of Patent: July 28, 2020
    Assignee: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
    Inventors: Teruhisa Akashi, Hirofumi Funabashi, Hiroko Iguchi, Hidehito Matsuo, Shigeo Hori
  • Patent number: 10637078
    Abstract: A fuel cell disclosed herein may comprise: a substrate provided with a recess through which fuel gas passes; an electrolyte membrane covering an opening of the recess; an insulating film covering one surface of the electrolyte membrane and having a through hole reaching the electrolyte membrane; a first electrode in contact with the one surface of the electrolyte membrane in the through hole; a second electrode in contact with the other surface of the electrolyte membrane; and a heater disposed in the insulating film at a position adjacent to the through hole.
    Type: Grant
    Filed: February 8, 2018
    Date of Patent: April 28, 2020
    Assignee: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
    Inventors: Hirofumi Funabashi, Teruhisa Akashi, Hiroko Iguchi, Hidehito Matsuo, Shigeo Hori
  • Publication number: 20190181230
    Abstract: A group III nitride semiconductor substrate may include: a p-type conduction region into which a group II element has been implanted in a depth direction of the group III nitride semiconductor substrate from a surface of the group III nitride semiconductor substrate, the p-type conduction region having p-type conductivity, wherein hydrogen has been implanted from the p-type conduction region across an n-type conduction region adjacent to the p-type conduction region in the depth direction of the group III nitride semiconductor substrate.
    Type: Application
    Filed: December 3, 2018
    Publication date: June 13, 2019
    Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
    Inventors: Hiroko IGUCHI, Tetsuo NARITA
  • Publication number: 20180277874
    Abstract: A solid oxide fuel cell includes an Si support substrate having a through hole, an electrolyte film formed on the surface of an Si support substrate and containing a solid oxide having oxygen ion conductivity, a first electrode formed on a surface of the electrolyte film (surface on the side opposite to the Si support substrate), and a second electrode formed at least on a surface exposed from the through hole in a rear face of the electrolyte film. The electrolyte film includes a porous layer including the solid oxide and containing pores inside, a first dense layer formed on a surface of the porous layer (surface on the side opposite to the Si support substrate), and a second dense layer formed at the interface between a rear face of the porous layer and the Si support substrate.
    Type: Application
    Filed: December 20, 2017
    Publication date: September 27, 2018
    Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
    Inventors: Hidehito MATSUO, Teruhisa AKASHI, Hirofumi FUNABASHI, Hiroko IGUCHI, Shigeo HORI, Toshihiko TANI
  • Publication number: 20180277855
    Abstract: A solid oxide fuel cell is disclosed herein. The fuel cell includes a silicon substrate, an electrolyte film laminated on the silicon substrate, and a gas flow path formed inside the silicon substrate. The electrolyte film is opposed to the gas flow path via an electrode film. A portion of a side wall of the gas flow path has a fillet shape, and the portion is close to the electrolyte film.
    Type: Application
    Filed: February 23, 2018
    Publication date: September 27, 2018
    Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
    Inventors: Teruhisa AKASHI, Hirofumi FUNABASHI, Hiroko IGUCHI, Hidehito MATSUO, Shigeo HORI
  • Publication number: 20180248205
    Abstract: A fuel cell disclosed herein may comprise: a substrate provided with a recess through which fuel gas passes; an electrolyte membrane covering an opening of the recess; an insulating film covering one surface of the electrolyte membrane and having a through hole reaching the electrolyte membrane; a first electrode in contact with the one surface of the electrolyte membrane in the through hole; a second electrode in contact with the other surface of the electrolyte membrane; and a heater disposed in the insulating film at a position adjacent to the through hole.
    Type: Application
    Filed: February 8, 2018
    Publication date: August 30, 2018
    Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
    Inventors: Hirofumi FUNABASHI, Teruhisa AKASHI, Hiroko IGUCHI, Hidehito MATSUO, Shigeo HORI
  • Patent number: 8952449
    Abstract: There is known a semiconductor device in which an IGBT structure is provided in an IGBT area and a diode structure is provided in a diode area, the IGBT area and the diode area are both located within a same substrate, and the IGBT area is adjacent to the diode area. In this type of semiconductor device, a phenomenon that carriers accumulated within the IGBT area flow into the diode area when the IGBT structure is turned off. In order to prevent this phenomenon, a region of shortening lifetime of carriers is provided at least in a sub-area that is within said IGBT area and adjacent to said diode area. In the sub-area, emitter of IGBT structure is omitted.
    Type: Grant
    Filed: August 16, 2011
    Date of Patent: February 10, 2015
    Assignee: Toyota Jidosha Kabushiki Kaisha
    Inventors: Masaki Koyama, Yasushi Ookura, Akitaka Soeno, Tatsuji Nagaoka, Takahide Sugiyama, Sachiko Aoi, Hiroko Iguchi
  • Patent number: 8716746
    Abstract: In a semiconductor device, an IGBT cell includes a trench passing through a base layer of a semiconductor substrate to a drift layer of the semiconductor substrate, a gate insulating film on an inner surface of the trench, a gate electrode on the gate insulating film, a first conductivity-type emitter region in a surface portion of the base layer, and a second conductivity-type first contact region in the surface portion of the base layer. The IGBT cell further includes a first conductivity-type floating layer disposed within the base layer to separate the base layer into a first portion including the emitter region and the first contact region and a second portion adjacent to the drift layer, and an interlayer insulating film disposed to cover an end of the gate electrode. A diode cell includes a second conductivity-type second contact region in the surface portion of the base layer.
    Type: Grant
    Filed: August 9, 2011
    Date of Patent: May 6, 2014
    Assignees: DENSO CORPORATION, Toyota Jidosha Kabushiki Kaisha
    Inventors: Masaki Koyama, Yasushi Ookura, Akitaka Soeno, Tatsuji Nagaoka, Takahide Sugiyama, Sachiko Aoi, Hiroko Iguchi
  • Publication number: 20120043582
    Abstract: There is known a semiconductor device in which an IGBT structure is provided in an IGBT area and a diode structure is provided in a diode area, the IGBT area and the diode area are both located within a same substrate, and the IGBT area is adjacent to the diode area. In this type of semiconductor device, a phenomenon that carriers accumulated within the IGBT area flow into the diode area when the IGBT structure is turned off. In order to prevent this phenomenon, a region of shortening lifetime of carriers is provided at least in a sub-area that is within said IGBT area and adjacent to said diode area. In the sub-area, emitter of IGBT structure is omitted.
    Type: Application
    Filed: August 16, 2011
    Publication date: February 23, 2012
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Masaki KOYAMA, Yasushi OOKURA, Akitaka SOENO, Tatsuji NAGAOKA, Takahide SUGIYAMA, Sachiko AOI, Hiroko IGUCHI
  • Publication number: 20120043581
    Abstract: In a semiconductor device, an IGBT cell includes a trench passing through a base layer of a semiconductor substrate to a drift layer of the semiconductor substrate, a gate insulating film on an inner surface of the trench, a gate electrode on the gate insulating film, a first conductivity-type emitter region in a surface portion of the base layer, and a second conductivity-type first contact region in the surface portion of the base layer. The IGBT cell further includes a first conductivity-type floating layer disposed within the base layer to separate the base layer into a first portion including the emitter region and the first contact region and a second portion adjacent to the drift layer, and an interlayer insulating film disposed to cover an end of the gate electrode. A diode cell includes a second conductivity-type second contact region in the surface portion of the base layer.
    Type: Application
    Filed: August 9, 2011
    Publication date: February 23, 2012
    Inventors: Masaki KOYAMA, Yasushi Ookura, Akitaka Soeno, Tatsuji Nagaoka, Takahide Sugiyama, Sachiko Aoi, Hiroko Iguchi