Abstract: The invention provides a substrate suitable for cell culture observation and a method of observation using the same. Crystalline carbon such as a graphite powder is mixed into a thermosetting resin such as a furan resin, and the mixture is molded in the shape of a sheet and carbonized to produce a carbon substrate; then, a cell is made to adhere to the carbon substrate, and the cell is caused to proliferate on the carbon substrate and observed using a microscope.

Abstract: An apparatus, which is for disaster prevention installed in a facility, includes a radio-frequency identification tag that stores at least one of a first data and a second data. The first data is related to the disaster prevention, and is transmitted by wireless communication. The second data is related to the disaster prevention, and is received by wireless communication.

Abstract: The invention provides at a relatively low cost a carbon substrate that is formed from an opaque material and that has an extremely flat surface so that optical measurements can be made on the substrate. Graphite powder with a particle size of 10 ?m or less is mixed in a thermosetting resin such as a furan resin, and the mixture is molded into a sheet and calcined at 1400° C. in an inert atmosphere to produce a carbon substrate whose surface is then ground flat.

Abstract: An apparatus, which is for disaster prevention installed in a facility, includes a radio-frequency identification tag that stores at least one of a first data and a second data. The first data is related to the disaster prevention, and is transmitted by wireless communication. The second data is related to the disaster prevention, and is received by wireless communication.

Abstract: The invention provides a substrate suitable for cell culture observation and a method of observation using the same. Crystalline carbon such as a graphite powder is mixed into a thermosetting resin such as a furan resin, and the mixture is molded in the shape of a sheet and carbonized to produce a carbon substrate; then, a cell is made to adhere to the carbon substrate, and the cell is caused to proliferate on the carbon substrate and observed using a microscope.

Abstract: The invention provides at a relatively low cost a carbon substrate that is formed from an opaque material and that has an extremely flat surface so that optical measurements can be made on the substrate. Graphite powder with a particle size of 10 ?m or less is mixed in a thermosetting resin such as a furan resin, and the mixture is molded into a sheet and calcined at 1400° C. in an inert atmosphere to produce a carbon substrate whose surface is then ground flat.

Abstract: A carbon microrod that holds a fine object by chemically adsorbing the object on the surface to make a dynamic measurement possible. An organic substance that leaves, after firing, glassy carbon that hardly becomes graphite, such as a chlorinated vinyl chloride resin, is mixed with a fine graphite powder having an average particle size of 1 ?m, and the mixture is extrusion molded with a die having a diameter of 50 ?m; the molded article is fired to give a carbon microrod comprising glassy carbon and crystalline carbon.

Abstract: A method of manufacturing a semiconductor integrated circuit device having a switching MISFET and a capacitor element formed over a semiconductor substrate, such as a DRAM, is disclosed. The dielectric film of the capacitor element is formed to be co-extensive with the capacitor electrode layer over it. The upper electrode of the capacitor element is formed to be larger than the lower electrode.

Abstract: A method of manufacturing a semiconductor integrated circuit device having a switching MISFET and a capacitor element formed over a semiconductor substrate, such as a DRAM, is disclosed. The dielectric film of the capacitor element is formed to be co-extensive with the capacitor electrode layer over it. The upper electrode of the capacitor element is formed to be larger than the lower electrode.

Abstract: A semiconductor integrated circuit device having a switching MISFET, and a capacitor element formed over the semiconductor substrate, such as a DRAM, is disclosed. In a first aspect of the present invention, the impurity concentration of the semiconductor region of the switching MISFET to which the capacitor element is connected is less than the impurity concentration of semiconductor regions of MISFETs of peripheral circuitry. In a second aspect, the Y-select signal line overlaps the lower electrode layer of the capacitor element. In a third aspect, a potential barrier layer, provided at least under the semiconductor region of the switching MISFET to which the capacitor element is connected, is formed by diffusion of an impurity for a channel stopper region. In a fourth aspect, the dielectric film of the capacitor element is co-extensive with the capacitor electrode layer over it.

Abstract: A carbon microrod that holds a fine object by chemically adsorbing the object on the surface to make a dynamic measurement possible. An organic substance that leaves, after firing, glassy carbon that hardly becomes graphite, such as a chlorinated vinyl chloride resin, is mixed with a fine graphite powder having an average particle size of 1 &mgr;m, and the mixture is extrusion molded with a die having a diameter of 50 &mgr;m; the molded article is fired to give a carbon microrod comprising glassy carbon and crystalline carbon.

Abstract: A semiconductor integrated circuit device having a switching MISFET, and a capacitor element formed over the semiconductor substrate, such as a DRAM, is disclosed. In a first aspect of the present invention, the impurity concentration of the semiconductor region of the switching MISFET to which the capacitor element is connected is less than the impurity concentration of semiconductor regions of MISFETs of peripheral circuitry. In a second aspect, the Y-select signal line overlaps the lower electrode layer of the capacitor element. In a third aspect, a potential barrier layer, provided at least under the semiconductor region of the switching MISFET to which the capacitor element is connected,, is formed by diffusion of an impurity for a channel stopper region. In a fourth aspect, the dielectric film of the capacitor element is co-extensive with the capacitor electrode layer over it.

Abstract: A semiconductor integrated circuit device having a switching MISFET, and a capacitor element formed over the semiconductor substrate, such as a DRAM, is disclosed. In a first aspect of the present invention, the impurity concentration of the semiconductor region of the switching MISFET to which the capacitor element is connected is less than the impurity concentration of semiconductor regions of MISFETs of peripheral circuitry. In a second aspect, the Y-select signal line overlaps the lower electrode layer of the capacitor element. In a third aspect, a potential barrier layer, provided at least under the semiconductor region of the switching MISFET to which the capacitor element is connected, is formed by diffusion of an impurity for a channel stopper region. In a fourth aspect, the dielectric film of the capacitor element is co-extensive with the capacitor electrode layer over it.

Abstract: A semiconductor integrated circuit device having a switching MISFET, and a capacitor element formed over the semiconductor substrate, is disclosed. In a first aspect, the impurity concentration of the semiconductor region of the switching MISFET to which the capacitor element is connected is less than the impurity concentration of semiconductor regions of MISFETs of peripheral circuitry.

Abstract: A semiconductor integrated circuit comprising first n-channel MISFETs constituting the memory cells of a storage system, second n-channel MISFETs constituting the peripheral circuits of the storage system, and third n-channel MISFETs constituting the output circuit among the peripheral circuits. The respective threshold voltages of the first n-channel MISFETs, the second n-channel MISFETs and the third n-channel MISFETs are decreased in that order when the respective gate lengths of those MISFETs are substantially the same.

Abstract: A semiconductor integrated circuit device having a switching MISFET, and a capacitor element formed over the semiconductor substrate, is disclosed. In a first aspect, the impurity concentration of the semiconductor region of the switching MISFET to which the capacitor element is connected is less than the impurity concentration of semiconductor regions of MISFETs of peripheral circuitry.

Abstract: A semiconductor integrated circuit comprising first n-channel MISFETs constituting the memory cells of a storage system, second n-channel MISFETs constituting the peripheral circuits of the storage system, and third n-channel MISFETs constituting the output circuit among the peripheral circuits. The respective threshold voltages of the first n-channel MISFETs, the second n-channel MISFETs and the third n-channel MISFETs are decreased in that order when the respective gate lengths of those MISFETs are substantially the same.

Abstract: A process for producing a carbon sensor for measuring a composition, includes (a) providing first and second carbon electrodes each comprised of a bundle of linear, thin carbon members; (b) surrounding the first carbon electrode by dipping the first carbon electrode in a solution comprised of a reactive substance which reacts chemically with the composition to be measured; (c) disposing the first carbon electrode and the solution in a cylindrical ion permeable membrane to hold the solution in the first carbon electrode as well as between the first carbon electrode and the cylindrical ion permeable membrane; (d) positioning the cylindrical ion permeable membrane including the first carbon electrode and the solution in an insulating tubular member; and (e) disposing the second carbon electrode between the insulating tubular member and the cylindrical ion permeable membrane.

Abstract: A semiconductor integrated circuit device having a switching MISFET, and a capacitor element formed over the semiconductor substrate, is disclosed. The impurity concentration of the semiconductor region of the switching MISFET to which the capacitor element is connected is less than the impurity concentration of semiconductor regions of MISFETs of peripheral circuitry. The Y-select signal line overlaps the lower electrode layer of the capacitor element. A potential barrier layer, provided at least under the semiconductor region of the switching MISFET to which the capacitor element is connected, is formed by diffusion of an impurity for a channel stopper region. The dielectric film of the capacitor element is co-extensive with the capacitor electrode layer over it. The capacitor dielectric film is a silicon nitride film having a silicon oxide layer thereon, the silicon oxide layer being formed by oxidizing a surface layer of the silicon nitride under high pressure.

Abstract: A carbon electrode is dipped in a solution containing a reactive substance, and the carbon electrode impregnated with the solution is covered with an insulating tubular member; or a solution containing a reactant is poured into an insulating tube, and a carbon electrode is inserted into the tube; whereby the reactant is made coexistent in the periphery of the carbon electrode. Alternatively, a reactive substance such as an active enzyme and graphite particles or activated carbon particles are mixed with a liquid and dispersed therein to prepare a thoroughly wetted paste. The paste is introduced by means of an extruding mechanism such as a syringe into an insulating tubular member in which a bundle of many thin carbon rods as a lead is inserted. Thus, a carbon sensor electrode is produced. Alternatively, a first carbon electrode that has been dipped in an active enzyme or an enzyme-like reactive substance solution is disposed in a wet condition in a cylindrical ion permeable membrane.