Abstract: Provided is a disinfectant composition exhibiting high disinfecting ability even if containing no disinfecting base agents that have conventionally been widely used or containing the disinfecting base agents in a reduced amount. The disinfectant composition contains an internal olefin sulfonate with 8 or more and 24 or less carbons; one or more organic acids selected from monocarboxylic acids, hydroxy acids, and dicarboxylic acids; and water.

Abstract: The present invention is a hydrophilization treatment agent composition containing (A) a branched-type anionic surfactant, (B) a polyvalent metal ion, and water, wherein a molar ratio between (A) and (B), (B)/(A), is 0.01 or more and 10 or less.

Abstract: Disclosed is a disposable diaper including a pair of leak-proof cuffs (6) provided respectively to both lateral sides of an absorbent assembly (5) along the longitudinal direction. Each leak-proof cuff (6) includes: an inwardly-oriented portion (63) wherein a leak-proof-cuff-forming sheet material (61) is arranged from a lateral side edge (43) of an absorbent core toward the absorbent member's inner side in the width direction; a fold-back portion (64) where the sheet material (61) is folded back toward the absorbent member's outer side in the width direction, the fold-back portion being located above the absorbent member (4); and an outwardly-folded portion (65) ranging from the fold-back portion (64) to a free end (6b) of the leak-proof cuff. The outwardly-folded portion (65) has a length, in the width direction, that is longer than the length of the inwardly-oriented portion (63), and a plurality of elastic members (62) are fixed in a stretched state to the outwardly-folded portion.

Abstract: A semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes a middle region which is configured between an upper region and a lower region; a doping concentration of a first conductivity type in the middle region is lower than the doping concentration of the first conductivity type in a drift layer. Therefore, a depletion layer may be extended and connected to the lower region when a backward biasing voltage is applied; an electric field of the upper region may be reduced.

Abstract: A semiconductor device and a method for forming the semiconductor device. The semiconductor device includes a first semiconductor region having a first conductivity type; and a second semiconductor region having a second conductivity type. The first semiconductor region is configured within the second semiconductor region and a plurality of crystal defects are formed in the second semiconductor region and at least part of the first semiconductor region is surrounded by the plurality of crystal defects. Therefore, recombination of charge carriers (electrons and holes) on a lateral direction and a longitudinal direction could be taken into account, and the switching time of the semiconductor device could be adequately decreased.

Abstract: Provided is a highly reliable semiconductor device that uses a thick passivation layer. The protective film is formed so as to cover mostly the entire surface of a semiconductor substrate, and is open only in an area of part that is above a metal wiring layer (connection area). The passivation layer includes starting from the bottom side, a first silicon nitride film that includes silicon nitride (Si3N4), a silicon oxide film that includes silicon oxide (SiO2), and an organic film (organic layer) that includes a polyimide. The silicon oxide film and organic film are formed so as to cover the electrode layer (metal wiring layer) except the top of the insulation layer and the connection area, however, the first silicon nitride film is formed only on the insulation layer and not formed on the electrode layer.

Abstract: A semiconductor device includes a semiconductor base body having a first main surface and a second main surface, the first main surface and the second main surface being opposite with each other; a Schottky electrode that is disposed on the first main surface and forms a Schottky junction with the semiconductor base body; and a barrier metal layer that is brought into ohmic contact with the first main surface around the Schottky electrode and covers a side surface of the Schottky electrode.

Abstract: A semiconductor device includes an n-type semiconductor substrate, which has a main surface having an element region and an outer peripheral region surrounding the element region; a p-type guard ring, which includes: a lowly-doped p-type region disposed on an upper surface of the semiconductor substrate in the outer peripheral region surrounding the element region; and a highly-doped p-type region disposed on an inner side of the lowly-doped p-type region and having an impurity concentration higher than an impurity concentration of the lowly-doped p-type region, wherein a side surface and a bottom surface of the highly-doped p-type region are covered by the lowly-doped p-type region such that the highly-doped p-type region is not in contact with the n-type region; and an ohmic junction electrode, which forms an ohmic junction with the highly-doped p-type region.

Abstract: A semiconductor device having a main electrode connected to a first semiconductor region and a second semiconductor layer on a semiconductor substrate so that a pn-junction diode is formed with the first semiconductor region being interposed and a Schottky barrier diode is formed with the second semiconductor layer being interposed on a surface of the semiconductor substrate, the semiconductor device includes a first electrode configured to ohmic-contact the first semiconductor region; a second electrode configured to Schottky-contact the second semiconductor layer and not having a portion directly contacting the first electrode; and a conductive reaction suppression layer to suppress a reaction between a material configuring the first electrode and a material configuring the second electrode are provided on the surface of the semiconductor substrate, and the main electrode is electrically connected to the first electrode and the second electrode.

Abstract: A semiconductor device having a main electrode connected to a first semiconductor region and a second semiconductor layer on a semiconductor substrate so that a pn-junction diode is formed with the first semiconductor region being interposed and a Schottky barrier diode is formed with the second semiconductor layer being interposed on a surface of the semiconductor substrate, the semiconductor device includes a first electrode configured to ohmic-contact the first semiconductor region; a second electrode configured to Schottky-contact the second semiconductor layer and not having a portion directly contacting the first electrode; and a conductive reaction suppression layer to suppress a reaction between a material configuring the first electrode and a material configuring the second electrode are provided on the surface of the semiconductor substrate, and the main electrode is electrically connected to the first electrode and the second electrode.

Abstract: An absorbent article 1 including a blood separating member 4 capable of separating blood into blood cells and plasma. The blood separating member 4 preferably has pores with a diameter of 6 ?m or smaller in a proportion of 20% to 90% in a pore size distribution measured in accordance with ASTM F361-86. A nonwoven fabric obtained by calendering a fiber aggregate can be used as the blood separating member.

Abstract: An absorbent article 1 including a blood separating member 4 capable of separating blood into blood cells and plasma. The blood separating member 4 preferably has pores with a diameter of 6 ?m or smaller in a proportion of 20% to 90% in a pore size distribution measured in accordance with ASTM F361-86. A nonwoven fabric obtained by calendering a fiber aggregate can be used as the blood separating member.

Abstract: A surgical dressing comprising a pressure-sensitive adhesive tape which comprises a polytetrafluoroethylene film support having provided thereon a pressure-sensitive adhesive layer, in which the polytetrafluoroethylene film support is a uniaxially stretched porous film and the adhesive tape has a load at 50% extension of not lower than 50 g/15 mm and lower than 200 g/15 mm. The surgical dressing does not involve irritation and can be applied with easy stretch to even the part of the body having a special contour, such as the tip of a finger or a joint, with good adhesion and can follow the movement of the part to which it is stuck.