Patents by Inventor Hiroko NAGAI
Hiroko NAGAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220370513Abstract: There are disclosed an antioxidant agent, an antisaccharification agent, a neurite outgrowth promoting agent, and a cognitive function improving agent, which contain propolis and a ginkgo leaf extract as active ingredients.Type: ApplicationFiled: October 28, 2020Publication date: November 24, 2022Inventors: Tomomi ISHIKAWA, Nobuaki OKUMURA, Chika NISHIMORI, Takahiro FUJIOKA, Ayanori YAMAKI, Hiroko NAGAI, Takashi ASAMA
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Patent number: 11307497Abstract: A compound including two or more partial structures shown by the following general formula (1-1) in the molecule, wherein each Ar independently represents an aromatic ring optionally having a substituent or an aromatic ring that contains at least one nitrogen atom optionally having a substituent, and two Ars are optionally bonded with each other to form a ring structure; the broken line represents a bond with an organic group; B represents an anionic leaving group that is capable of forming a reactive cation due to effect of either or both of heat and acid. This provides a compound that is capable of curing under the film forming conditions in air or an inert gas without forming byproducts, and forming an organic under layer film that has good dry etching durability during substrate processing not only excellent characteristics of gap filling and planarizing a pattern formed on a substrate.Type: GrantFiled: March 5, 2019Date of Patent: April 19, 2022Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Seiichiro Tachibana, Takeru Watanabe, Keisuke Niida, Hiroko Nagai, Takashi Sawamura, Tsutomu Ogihara
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Patent number: 11042090Abstract: The present invention provides a composition for forming an organic film, containing a polymer compound having one or more of repeating units shown by the general formulae (1) to (4) and an organic solvent containing one or more compounds selected from propylene glycol esters, ketones, and lactones, with a total concentration of more than 30 wt % with respect to the whole organic solvent. There can be provided a composition capable of forming an organic film that can be easily removed, together with a silicon residue modified by dry etching, in a wet manner with a removing liquid harmless to a semiconductor apparatus substrate and an organic resist underlayer film required in the patterning process, for example, an ammonia aqueous solution containing hydrogen peroxide called SC1, which is commonly used in the semiconductor manufacturing process.Type: GrantFiled: July 24, 2018Date of Patent: June 22, 2021Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Seiichiro Tachibana, Hiroko Nagai, Daisuke Kori, Tsutomu Ogihara
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Patent number: 11022882Abstract: A compound shown by the following general formula (1-1), AR1 and AR2 each independently represent an aromatic ring or an aromatic ring containing at least one nitrogen and/or sulfur atom, two AR1s, AR1 and AR2, or two AR2s are optionally bonded; AR3 represents a benzene, naphthalene, thiophene, pyridine, or diazine ring; A represents an organic group; B represents an anionic leaving group; Y represents a divalent organic group; “p” is 1 or 2; “q” is 1 or 2; “r” is 0 or 1; “s” is 2 to 4; when s=2, Z represents a single bond, divalent atom, or divalent organic group; and when s=3 or 4, Z represents a trivalent or quadrivalent atom or organic group. This compound cures to form an organic film, and also forms an organic under layer film.Type: GrantFiled: June 20, 2018Date of Patent: June 1, 2021Assignees: SHIN-ETSU CHEMICAL CO., LTD., INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Seiichiro Tachibana, Takeru Watanabe, Keisuke Niida, Hiroko Nagai, Takashi Sawamura, Tsutomu Ogihara, Alexander Edward Hess, Gregory Breyta, Daniel Paul Sanders, Rudy J. Wojtecki
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Patent number: 10604618Abstract: A compound includes two or more structures shown by the following general formula (1-1) in the molecule, “Ar” represents an aromatic ring or one that contains at least one nitrogen atom and/or sulfur atom optionally having a substituent, and two Ars are optionally bonded with each other to form a ring structure; the broken line represents a bond with Y; Y represents a divalent or trivalent organic group having 6 to 30 carbon atoms that contains an aromatic ring or a heteroaromatic ring optionally having a substituent, the bonds of which are located in a structure of the aromatic ring or the heteroaromatic ring; R represents a hydrogen atom or a monovalent group having 1 to 68 carbon atoms. This compound can be cured even in an inert gas not only in air atmosphere without forming byproducts, and can form an organic under layer film.Type: GrantFiled: June 20, 2018Date of Patent: March 31, 2020Assignees: SHIN-ETSU CHEMICAL CO., LTD., INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Seiichiro Tachibana, Takeru Watanabe, Keisuke Niida, Hiroko Nagai, Takashi Sawamura, Tsutomu Ogihara, Alexander Edward Hess, Gregory Breyta, Daniel Paul Sanders, Rudy J. Wojtecki
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Publication number: 20190391493Abstract: A compound shown by the following general formula (1-1), AR1 and AR2 each independently represent an aromatic ring or an aromatic ring containing at least one nitrogen and/or sulfur atom, two AR1s, AR1 and AR2, or two AR2s are optionally bonded; AR3 represents a benzene, naphthalene, thiophene, pyridine, or diazine ring; A represents an organic group; B represents an anionic leaving group; Y represents a divalent organic group; “p” is 1 or 2; “q” is 1 or 2; “r” is 0 or 1; “s” is 2 to 4; when s=2, Z represents a single bond, divalent atom, or divalent organic group; and when s=3 or 4, Z represents a trivalent or quadrivalent atom or organic group. This compound cures to form an organic film, and also forms an organic under layer film.Type: ApplicationFiled: June 20, 2018Publication date: December 26, 2019Applicants: SHIN-ETSU CHEMICAL CO., LTD., INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Seiichiro TACHIBANA, Takeru WATANABE, Keisuke NIIDA, Hiroko NAGAI, Takashi SAWAMURA, Tsutomu OGIHARA, Alexander Edward HESS, Gregory BREYTA, Daniel Paul SANDERS, Rudy J. WOJTECKI
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Publication number: 20190390000Abstract: A compound includes two or more structures shown by the following general formula (1-1) in the molecule, “Ar” represents an aromatic ring or one that contains at least one nitrogen atom and/or sulfur atom optionally having a substituent, and two Ars are optionally bonded with each other to form a ring structure; the broken line represents a bond with Y; Y represents a divalent or trivalent organic group having 6 to 30 carbon atoms that contains an aromatic ring or a heteroaromatic ring optionally having a substituent, the bonds of which are located in a structure of the aromatic ring or the heteroaromatic ring; R represents a hydrogen atom or a monovalent group having 1 to 68 carbon atoms. This compound can be cured even in an inert gas not only in air atmosphere without forming byproducts, and can form an organic under layer film.Type: ApplicationFiled: June 20, 2018Publication date: December 26, 2019Applicants: SHIN-ETSU CHEMICAL CO., LTD., INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Seiichiro TACHIBANA, Takeru WATANABE, Keisuke NIIDA, Hiroko NAGAI, Takashi SAWAMURA, Tsutomu OGIHARA, Alexander Edward HESS, Gregory BREYTA, Daniel Paul SANDERS, Rudy J. WOJTECKI
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Patent number: 10514605Abstract: The present invention provides a resist multilayer film-attached substrate, including a substrate and a resist multilayer film formed on the substrate, in which the resist multilayer film has an organic resist underlayer film difficultly soluble in ammonia hydrogen peroxide water, an organic film soluble in ammonia hydrogen peroxide water, a silicon-containing resist middle layer film, and a resist upper layer film laminated on the substrate in the stated order. There can be provided a resist multilayer film-attached substrate that enables a silicon residue modified by dry etching to be easily removed in a wet manner with a removing liquid harmless to a semiconductor apparatus substrate and an organic resist underlayer film required in the patterning process, for example, an ammonia aqueous solution containing hydrogen peroxide called SC1, which is commonly used in the semiconductor manufacturing process.Type: GrantFiled: July 24, 2018Date of Patent: December 24, 2019Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, SHIN-ETSU CHEMICAL CO., LTD.Inventors: Seiichiro Tachibana, Tsutomu Ogihara, Hiroko Nagai, Romain Lallement, Karen E. Petrillo
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Publication number: 20190300498Abstract: A compound including two or more partial structures shown by the following general formula (1-1) in the molecule, wherein each Ar independently represents an aromatic ring optionally having a substituent or an aromatic ring that contains at least one nitrogen atom optionally having a substituent, and two Ars are optionally bonded with each other to form a ring structure; the broken line represents a bond with an organic group; B represents an anionic leaving group that is capable of forming a reactive cation due to effect of either or both of heat and acid. This provides a compound that is capable of curing under the film forming conditions in air or an inert gas without forming byproducts, and forming an organic under layer film that has good dry etching durability during substrate processing not only excellent characteristics of gap filling and planarizing a pattern formed on a substrate.Type: ApplicationFiled: March 5, 2019Publication date: October 3, 2019Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Seiichiro TACHIBANA, Takeru WATANABE, Keisuke NIIDA, Hiroko NAGAI, Takashi SAWAMURA, Tsutomu OGIHARA
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Patent number: 10416563Abstract: A resist underlayer film composition is excellent in resistance to a basic hydrogen peroxide aqueous solution in gap-filling and planarization characteristics having a dry etching characteristic; a patterning process and method for forming a resist underlayer film, wherein the resist underlayer film composition is used for a multilayer resist method, the composition comprising: (a1) one, or two or more, of a compound represented by following general formula (x); and (b) an organic solvent, wherein n01 represents an integer of 1 to 10; when n01 is 2, w represents a sulfinyl group, a sulfonyl group, an ether group, or a divalent organic group having 2 to 50 carbon atoms; when n01 is an integer other than 2, w represents an n01-valent organic group having 2 to 50 carbon atoms; and y represents a single bond or divalent connecting group having 1 to 10 carbon atoms and optionally having an oxygen atom.Type: GrantFiled: March 8, 2018Date of Patent: September 17, 2019Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Hironori Satoh, Hiroko Nagai, Takeru Watanabe, Daisuke Kori, Tsutomu Ogihara
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Patent number: 10241412Abstract: Provided is a resist underlayer film composition which is excellent in resistance to a basic hydrogen peroxide aqueous solution, in gap-filling and planarization characteristics, and in dry etching characteristic, wherein the resist underlayer film composition is used for a multilayer resist method, comprising: (A1) a polymer (1A) comprising one, or two or more, of a repeating unit represented by following general formula (1); (A2) one, or two or more, of a polyphenol compound having a formula weight of 2,000 or less and not having a 3,4-dihydroxy phenyl group; and (B) an organic solvent.Type: GrantFiled: March 8, 2018Date of Patent: March 26, 2019Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Hiroko Nagai, Takeru Watanabe, Daisuke Kori, Tsutomu Ogihara
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Publication number: 20190041753Abstract: The present invention provides a resist multilayer film-attached substrate, including a substrate and a resist multilayer film formed on the substrate, in which the resist multilayer film has an organic resist underlayer film difficultly soluble in ammonia hydrogen peroxide water, an organic film soluble in ammonia hydrogen peroxide water, a silicon-containing resist middle layer film, and a resist upper layer film laminated on the substrate in the stated order. There can be provided a resist multilayer film-attached substrate that enables a silicon residue modified by dry etching to be easily removed in a wet manner with a removing liquid harmless to a semiconductor apparatus substrate and an organic resist underlayer film required in the patterning process, for example, an ammonia aqueous solution containing hydrogen peroxide called SC1, which is commonly used in the semiconductor manufacturing process.Type: ApplicationFiled: July 24, 2018Publication date: February 7, 2019Applicants: SHIN-ETSU CHEMICAL CO., LTD., INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Seiichiro TACHIBANA, Tsutomu OGIHARA, Hiroko NAGAI, Romain LALLEMENT, Karen E. PETRILLO
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Publication number: 20190041752Abstract: The present invention provides a composition for forming an organic film, containing a polymer compound having one or more of repeating units shown by the general formulae (1) to (4) and an organic solvent containing one or more compounds selected from propylene glycol esters, ketones, and lactones, with a total concentration of more than 30 wt % with respect to the whole organic solvent. There can be provided a composition capable of forming an organic film that can be easily removed, together with a silicon residue modified by dry etching, in a wet manner with a removing liquid harmless to a semiconductor apparatus substrate and an organic resist underlayer film required in the patterning process, for example, an ammonia aqueous solution containing hydrogen peroxide called SC1, which is commonly used in the semiconductor manufacturing process.Type: ApplicationFiled: July 24, 2018Publication date: February 7, 2019Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Seiichiro TACHIBANA, Hiroko NAGAI, Daisuke KORI, Tsutomu OGIHARA
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Publication number: 20180284615Abstract: Provided is a resist underlayer film composition which is excellent in resistance to a basic hydrogen peroxide aqueous solution, in gap-filling and planarization characteristics, and in dry etching characteristic, wherein the resist underlayer film composition is used for a multilayer resist method, comprising: (A1) a polymer (1A) comprising one, or two or more, of a repeating unit represented by following general formula (1); (A2) one, or two or more, of a polyphenol compound having a formula weight of 2,000 or less and not having a 3,4-dihydroxy phenyl group; and (B) an organic solvent.Type: ApplicationFiled: March 8, 2018Publication date: October 4, 2018Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Hiroko NAGAI, Takeru WATANABE, Daisuke KORI, Tsutomu OGIHARA
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Publication number: 20180284614Abstract: A resist underlayer film composition is excellent in resistance to a basic hydrogen peroxide aqueous solution in gap-filling and planarization characteristics having a dry etching characteristic; a patterning process and method for forming a resist underlayer film, wherein the resist underlayer film composition is used for a multilayer resist method, the composition comprising: (a1) one, or two or more, of a compound represented by following general formula (x); and (b) an organic solvent, wherein n01 represents an integer of 1 to 10; when n01 is 2, w represents a sulfinyl group, a sulfonyl group, an ether group, or a divalent organic group having 2 to 50 carbon atoms; when n01 is an integer other than 2, w represents an n01-valent organic group having 2 to 50 carbon atoms; and y represents a single bond or divalent connecting group having 1 to 10 carbon atoms and optionally having an oxygen atom.Type: ApplicationFiled: March 8, 2018Publication date: October 4, 2018Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Hironori SATOH, Hiroko NAGAI, Takeru WATANABE, Daisuke KORI, Tsutomu OGIHARA