Abstract: A semiconductor device includes: a semiconductor substrate; a through silicon via which penetrates the semiconductor substrate; an insulating film which is provided between a side surface of the through silicon via and the semiconductor substrate; and a MOS transistor which is provided on the semiconductor substrate, wherein: the semiconductor substrate has a first crystal axis and a second crystal axis, and a propagation amount of stress occurring from the through silicon via is larger in a direction of the first crystal axis than in a direction of the second crystal axis; and the insulating film has a thickness in a direction of a diameter of the through silicon via being a thickness along the direction of the first crystal axis larger than a thickness along the direction of the second crystal axis.

Abstract: A semiconductor device includes a via and first and second transistors of the same channel type which are formed in a semiconductor substrate. The first and second transistors are located in a first lateral direction of the via and have their channel direction that matches the first lateral direction. A first stress relaxation region is formed in the semiconductor substrate between the via and the first transistor which is located closer to the via than the second transistor is. A second stress relaxation region smaller than the first stress relaxation region is formed in the semiconductor substrate between the first transistor and the second transistor which is located farther from the via than the first transistor is.

Abstract: A semiconductor device includes a semiconductor substrate, a stress generation source that is provided on the semiconductor substrate and generates stress in the semiconductor substrate, and a first field-effect transistor and a second field-effect transistor provided on the semiconductor substrate. The first field-effect transistor and the semiconductor substrate are disposed such that channel directions from a source toward a drain are different from each other in response to positions with respect to the stress generation source.

Abstract: An optical recording medium has a phase-change recording layer containing Sb and Te as essential elements therefor, to which is added at least one element selected from the group consisting of Ag, Au, Cu, Zn, B, Al, Ga, In, Si, Ge, Sn, Pb, N, P, Bi, La, Ce, Gd, and Tb, the recording layer being capable of assuming an amorphous phase changed from a crystalline phase by the application of a laser beam thereto, thereby optically recording information. Recording marks are formed in the recording medium by converting a light emission wave of laser beam into a recording pulse train comprising a plurality of on-pulses and off-pulses, with a recording frequency being continuously changed corresponding to the location of each of the recording marks in the radial direction of said recording medium. A recording apparatus has laser beam driving circuit means, signal generation means, and signal transmission means for achieving the above recording method.

Abstract: In an optical disk substrate film-formation apparatus which prepared an optical disk by forming a thin film on a substrate, the optical disk substrate is held by a holder section. A contact support surface is provided to the holder section which closely contacts at least a portion of the surface of the optical disk substrate rear to the surface where the think film is formed.

Abstract: An optical recording medium which comprises a substrate and a recording layer disposed on the substrate, in which the recording layer comprises Ga and Sb, a content of the Sb is 80 atm % to 95 atm % relative to a total content of the Ga and the Sb in the recording layer, and recording and erasing are carried out by a reversible phase change between an amorphous phase and a crystalline phase in the recording layer.

Abstract: An optical recording medium has a phase-change recording layer containing Sb and Te as essential elements therefor, to which is added at least one element selected from the group consisting of Ag, Au, Cu, Zn, B, Al, Ga, In, Si, Ge, Sn, Pb, N, P, Bi, La, Ce, Gd, and Tb, the recording layer being capable of assuming an amorphous phase changed from a crystalline phase by the application of a laser beam thereto, thereby optically recording information. Recording marks are formed in the recording medium by converting a light emission wave of laser beam into a recording pulse train comprising a plurality of on-pulses and off-pulses, with a recording frequency being continuously changed corresponding to the location of each of the recording marks in the radial direction of said recording medium. A recording apparatus has laser beam driving circuit means, signal generation means, and signal transmission means for achieving the above recording method.

Abstract: An optical recording medium has a phase-change recording layer containing Sb and Te as essential elements therefor, to which is added at least one element selected from the group consisting of Ag, Au, Cu, Zn, B, Al, Ga, In, Si, Ge, Sn, Pb, N, P, Bi, La, Ce, Gd, and Tb, the recording layer being capable of assuming an amorphous phase changed from a crystalline phase by the application of a laser beam thereto, thereby optically recording information. Recording marks are formed in the recording medium by converting a light emission wave of laser beam into a recording pulse train comprising a plurality of on-pulses and off-pulses, with a recording frequency being continuously changed corresponding to the location of each of the recording marks in the radial direction of said recording medium. A recording apparatus has laser beam driving circuit means, signal generation means, and signal transmission means for achieving the above recording method.

Abstract: An optical recording medium has a phase-change recording layer containing Sb and Te as essential elements therefor, to which is added at least one element selected from the group consisting of Ag, Au, Cu, Zn, B, Al, Ga, In, Si, Ge, Sn, Pb, N, P, Bi, La, Ce, Gd, and Tb, the recording layer being capable of assuming an amorphous phase changed from a crystalline phase by the application of a laser beam thereto, thereby optically recording information. Recording marks are formed in the recording medium by converting a light emission wave of laser beam into a recording pulse train comprising a plurality of on-pulses and off-pulses, with a recording frequency being continuously changed corresponding to the location of each of the recording marks in the radial direction of said recording medium. A recording apparatus has laser beam driving circuit means, signal generation means, and signal transmission means for achieving the above recording method.

Abstract: An optical recording medium has a phase-change recording layer containing Sb and Te as essential elements therefor, to which is added at least one element selected from the group consisting of Ag, Au, Cu, Zn, B, Al, Ga, In, Si, Ge, Sn, Pb, N, P, Bi, La, Ce, Gd, and Tb, the recording layer being capable of assuming an amorphous phase changed from a crystalline phase by the application of a laser beam thereto, thereby optically recording information. Recording marks are formed in the recording medium by converting a light emission wave of laser beam into a recording pulse train comprising a plurality of on-pulses and off-pulses, with a recording frequency being continuously changed corresponding to the location of each of the recording marks in the radial direction of said recording medium. A recording apparatus has laser beam driving circuit means, signal generation means, and signal transmission means for achieving the above recording method.

Abstract: In an optical disk substrate film-formation apparatus which prepared an optical disk by forming a thin film on a substrate, the optical disk substrate is held by a holder section. A contact support surface is provided to the holder section which closely contacts at least a portion of the surface of the optical disk substrate rear to the surface where the think film is formed.

Abstract: In an optical disk substrate film-formation apparatus which prepared an optical disk by forming a thin film on a substrate, the optical disk substrate is held by a holder section. A contact support surface is provided to the holder section which closely contacts at least a portion of the surface of the optical disk substrate rear to the surface where the think film is formed.

Abstract: An optical recording medium has a phase-change recording layer containing Sb and Te as essential elements therefor, to which is added at least one element selected from the group consisting of Ag, Au, Cu, Zn, B, Al, Ga, In, Si, Ge, Sn, Pb, N, P, Bi, La, Ce, Gd, and Tb, the recording layer being capable of assuming an amorphous phase changed from a crystalline phase by the application of a laser beam thereto, thereby optically recording information. Recording marks are formed in the recording medium by converting a light emission wave of laser beam into a recording pulse train comprising a plurality of on-pulses and off-pulses, with a recording frequency being continuously changed corresponding to the location of each of the recording marks in the radial direction of said recording medium. A recording apparatus has laser beam driving circuit means, signal generation means, and signal transmission means for achieving the above recording method.

Abstract: An optical recording medium has a phase-change recording layer containing Sb and Te as essential elements therefor, to which is added at least one element selected from the group consisting of Ag, Au, Cu, Zn, B, Al, Ga, In, Si, Ge, Sn, Pb, N, P, Bi, La, Ce, Gd, and Tb, the recording layer being capable of assuming an amorphous phase changed from a crystalline phase by the application of a laser beam thereto, thereby optically recording information. Recording marks are formed in the recording medium by converting a light emission wave of laser beam into a recording pulse train comprising a plurality of on-pulses and off-pulses, with a recording frequency being continuously changed corresponding to the location of each of the recording marks in the radial direction of said recording medium. A recording apparatus has laser beam driving circuit means, signal generation means, and signal transmission means for achieving the above recording method.

Abstract: A product for recording information by use of laser light includes a recording layer being able to change between an amorphous state and a crystalline state so as to record information, the recording layer having a thickness falling within a first range defined relative to a wavelength of the laser light, a protection layer having a thickness falling within a second range defined relative to the wavelength of the laser light, a heat releasing layer having a thickness falling within a third range defined relative to the wavelength of the laser light, and a transparent substrate supporting the layers. The first, second, and third ranges are selected such that a phase of the laser light reflected by the amorphous state and a phase of the laser light reflected by the crystalline state have a phase difference larger than a predetermined phase amount.

Abstract: An optical recording medium which comprises a substrate and a recording layer disposed on the substrate, in which the recording layer comprises Ga and Sb, a content of the Sb is 80 atm % to 95 atm % relative to a total content of the Ga and the Sb in the recording layer, and recording and erasing are carried out by a reversible phase change between an amorphous phase and a crystalline phase in the recording layer.

Abstract: In an optical disk substrate film-formation apparatus which prepared an optical disk by forming a thin film on a substrate, the optical disk substrate is held by a holder section. A contact support surface is provided to the holder section which closely contacts at least a portion of the surface of the optical disk substrate rear to the surface where the think film is formed.

Abstract: An optical recording medium has a phase-change recording layer containing Sb and Te as essential elements therefor, to which is added at least one element selected from the group consisting of Ag, Au, Cu, Zn, B, Al, Ga, In, Si, Ge, Sn, Pb, N, P, Bi, La, Ce, Gd, and Tb, the recording layer being capable of assuming an amorphous phase changed from a crystalline phase by the application of a laser beam thereto, thereby optically recording information. Recording marks are formed in the recording medium by converting a light emission wave of laser beam into a recording pulse train comprising a plurality of on-pulses and off-pulses, with a recording frequency being continuously changed corresponding to the location of each of the recording marks in the radial direction of said recording medium. A recording apparatus has laser beam driving circuit means, signal generation means, and signal transmission means for achieving the above recording method.

Abstract: An optical recording medium has a phase-change recording layer containing Sb and Te as essential elements therefor, to which is added at least one element selected from the group consisting of Ag, Au, Cu, Zn, B, Al, Ga, In, Si, Ge, Sn, Pb, N, P, Bi, La, Ce, Cd, and Tb, the recording layer being capable of assuming an amorphous phase changed from a crystalline phase by the application of a laser beam thereto, thereby optically recording information. Recording marks are formed in the recording medium by converting a light emission wave of laser beam into a recording pulse train comprising a plurality of on-pulses and off-pulses, with a recording frequency being continuously changed corresponding to the location of each of the recording marks in the radial direction of said recording medium. A recording apparatus has laser beam driving circuit means, signal generation means, and signal transmission means for achieving the above recording method.

Abstract: An optical recording medium has a phase-change recording layer containing Sb and Te as essential elements therefor, to which is added at least one element selected from the group consisting of Ag, Au, Cu, Zn, B, Al, Ga, In, Si, Ge, Sn, Pb, N, P, Bi, La, Ce, Gd, and Tb, the recording layer being capable of assuming an amorphous phase changed from a crystalline phase by the application of a laser beam thereto, thereby optically recording information. Recording marks are formed in the recording medium by converting a light emission wave of laser beam into a recording pulse train comprising a plurality of on-pulses and off-pulses, with a recording frequency being continuously changed corresponding to the location of each of the recording marks in the radial direction of said recording medium. A recording apparatus has laser beam driving circuit means, signal generation means, and signal transmission means for achieving the above recording method.