Abstract: A SiC epitaxial wafer includes: a substrate having an off angle of less than 4 degrees; and a SiC epitaxial growth layer disposed on the substrate having the off angle of less than 4 degrees, wherein an Si compound is used for a supply source of Si, and a C compound is used as a supply source of C, for the SiC epitaxial growth layer, wherein the uniformity of carrier density is less than 10%, and the defect density is less than 1 count/cm2; and a C/Si ratio of the Si compound and the C (carbon) compound is within a range of 0.7 to 0.95. There is provide a high-quality SiC epitaxial wafer excellent in film thickness uniformity and uniformity of carrier density, having the small number of surface defects, and capable of reducing costs, also in low-off angle SiC substrates on SiC epitaxial growth.

Abstract: A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.

Abstract: A SiC epitaxial wafer includes: a substrate having an off angle of less than 4 degrees; and a SiC epitaxial growth layer disposed on the substrate having the off angle of less than 4 degrees, wherein an Si compound is used for a supply source of Si, and a C compound is used as a supply source of C, for the SiC epitaxial growth layer, wherein the uniformity of carrier density is less than 10%, and the defect density is less than 1 count/cm2; and a C/Si ratio of the Si compound and the C (carbon) compound is within a range of 0.7 to 0.95. There is provide a high-quality SiC epitaxial wafer excellent in film thickness uniformity and uniformity of carrier density, having the small number of surface defects, and capable of reducing costs, also in low-off angle SiC substrates on SiC epitaxial growth.

Abstract: A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.

Abstract: A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.

Abstract: A SiC epitaxial wafer includes: a substrate having an off angle of less than 4 degrees; and a SiC epitaxial growth layer disposed on the substrate having the off angle of less than 4 degrees, wherein an Si compound is used for a supply source of Si, and a C compound is used as a supply source of C, for the SiC epitaxial growth layer, wherein the uniformity of carrier density is less than 10%, and the defect density is less than 1 count/cm2; and a C/Si ratio of the Si compound and the C (carbon) compound is within a range of 0.7 to 0.95. There is provide a high-quality SiC epitaxial wafer excellent in film thickness uniformity and uniformity of carrier density, having the small number of surface defects, and capable of reducing costs, also in low-off angle SiC substrates on SiC epitaxial growth.

Abstract: A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.

Abstract: A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.

Abstract: A SiC epitaxial wafer includes: a substrate having an off angle of less than 4 degrees; and a SiC epitaxial growth layer disposed on the substrate having the off angle of less than 4 degrees, wherein an Si compound is used for a supply source of Si, and a C compound is used as a supply source of C, for the SiC epitaxial growth layer, wherein the uniformity of carrier density is less than 10%, and the defect density is less than 1 count/cm2; and a C/Si ratio of the Si compound and the C (carbon) compound is within a range of 0.7 to 0.95. There is provide a high-quality SiC epitaxial wafer excellent in film thickness uniformity and uniformity of carrier density, having the small number of surface defects, and capable of reducing costs, also in low-off angle SiC substrates on SiC epitaxial growth.

Abstract: A SiC epitaxial wafer includes: a substrate having an off angle of less than 4 degrees; and a SiC epitaxial growth layer disposed on the substrate having the off angle of less than 4 degrees, wherein an Si compound is used for a supply source of Si, and a C compound is used as a supply source of C, for the SiC epitaxial growth layer, wherein the uniformity of carrier density is less than 10%, and the defect density is less than 1 count/cm2; and a C/Si ratio of the Si compound and the C (carbon) compound is within a range of 0.7 to 0.95. There is provide a high-quality SiC epitaxial wafer excellent in film thickness uniformity and uniformity of carrier density, having the small number of surface defects, and capable of reducing costs, also in low-off angle SiC substrates on SiC epitaxial growth.

Abstract: A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.

Abstract: A SiC epitaxial wafer includes: a substrate having an off angle of less than 4 degrees; and a SiC epitaxial growth layer disposed on the substrate having the off angle of less than 4 degrees, wherein an Si compound is used for a supply source of Si, and a C compound is used as a supply source of C, for the SiC epitaxial growth layer, wherein the uniformity of carrier density is less than 10%, and the defect density is less than 1 count/cm2; and a C/Si ratio of the Si compound and the C (carbon) compound is within a range of 0.7 to 0.95. There is provide a high-quality SiC epitaxial wafer excellent in film thickness uniformity and uniformity of carrier density, having the small number of surface defects, and capable of reducing costs, also in low-off angle SiC substrates on SiC epitaxial growth.

Abstract: A nitride based semiconductor device includes: a substrate; a first buffer layer disposed on the substrate; a second buffer layer disposed on the first buffer layer; a third buffer layer disposed on the second buffer layer, the third buffer layer including an AlGaN-based nitride semiconductor; a fourth buffer layer disposed on the third buffer layer, the fourth buffer layer including a GaN-based nitride semiconductor; a barrier layer disposed on the fourth buffer layer, the barrier layer including an AlGaN-based nitride semiconductor; and a source electrode and a drain electrode, each disposed on the barrier layer, and a gate electrode disposed between the source electrode and the drain electrode, wherein the third buffer layer is subjected to lattice relaxation. There can be provided a nitride based semiconductor device capable of reducing a leakage current and improving breakdown capability.

Abstract: A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.

Abstract: A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.

Abstract: A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {10 11} GaN films deposited on {100} MgAl2O4 spinel substrate miscut in the <011> direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.

Abstract: A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {10 11} GaN films deposited on {100} MgAl2O4 spinel substrate miscut in the <011> direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.

Abstract: An (Al,Ga,In)N-based light emitting diode (LED), comprising a p-type surface of the LED bonded with a transparent submount material to increase light extraction at the p-type surface, wherein the LED is a substrateless membrane.

Abstract: A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.

Abstract: A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {10 11} GaN films deposited on {100} MgAl2O4 spinel substrate miscut in the <011> direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.