Abstract: A method dresses a polishing member with a diamond dresser having diamond particles arranged on a surface thereof. The method includes determining dressing conditions by performing a simulation of a distribution of a sliding distance of the diamond dresser on a surface of the polishing member, and dressing the polishing member with the diamond dresser under the determined dressing conditions. The simulation includes calculating the sliding distance corrected in accordance with a depth of the diamond particles thrusting into the polishing member.

Abstract: A method dresses a polishing member with a diamond dresser having diamond particles arranged on a surface thereof. The method includes determining dressing conditions by performing a simulation of a distribution of a sliding distance of the diamond dresser on a surface of the polishing member, and dressing the polishing member with the diamond dresser under the determined dressing conditions. The simulation includes calculating the sliding distance corrected in accordance with a depth of the diamond particles thrusting into the polishing member.

Abstract: A method dresses a polishing member with a diamond dresser having diamond particles arranged on a surface thereof. The method includes determining dressing conditions by performing a simulation of a distribution of a sliding distance of the diamond dresser on a surface of the polishing member, and dressing the polishing member with the diamond dresser under the determined dressing conditions. The simulation includes calculating the sliding distance corrected in accordance with a depth of the diamond particles thrusting into the polishing member.

Abstract: A substrate processing method dose not use or only use the least possible amount of an organic solvent, and can quickly and completely remove a liquid from a wet substrate surface without allowing the liquid to remain on the substrate surface. The substrate processing method for drying a substrate surface which is wet with a liquid, includes: removing the liquid from the substrate surface and sucking the liquid together with its surrounding gas into a gas/liquid suction nozzle, disposed opposite the substrate surface, while relatively moving the gas/liquid suction nozzle and the substrate parallel to each other; and blowing a dry gas from a dry gas supply nozzle, disposed opposite the substrate surface, toward that area of the substrate surface from which the liquid has been removed while relatively moving the dry gas supply nozzle and the substrate parallel to each other.

Abstract: A method of dressing a polishing member with a diamond dresser having diamond particles arranged on a surface thereof is provided. The method includes determining dressing conditions by performing a simulation of a distribution of a sliding distance of the diamond dresser on a surface of the polishing member, and dressing the polishing member with the diamond dresser under the dressing conditions determined. The simulation includes calculation of the sliding distance corrected in accordance with a depth of the diamond particles thrusting into the polishing member.

Abstract: An electrolytic processing apparatus can increase the efficiency of the dissociation reaction of water and efficiently perform electrolytic processing, and can eliminate the need for an operation of a change of ion exchanger. The electrolytic processing apparatus includes: a processing electrode and a feeding electrode; a liquid supply section for supplying a liquid containing an ion-exchange material between the workpiece and at least one of the processing electrode and the feeding electrode; a power source for applying a voltage between the processing electrode and the feeding electrode; and a drive section for moving the workpiece and at least one of the processing electrode and the feeding electrode relative to each other; wherein electrolytic processing of the workpiece is carried out while keeping the workpiece not in contact with but close to the processing electrode at a distance of not more than 10 ?m.

Abstract: The present invention provides an electrochemical polishing method capable of increasing a polishing speed while preventing excessive polishing, such as dishing or erosion. In the electrochemical polishing method, when a voltage applied to a conductive film formed on the surface of a substrate is increased at a contact surface pressure of 0 between the surface of the substrate and a polishing pad, a voltage at a first change point C that allows a current density to start to decrease after an increase is referred to as a minimum voltage. In addition, when the voltage is increased at a contact surface pressure having a finite value, a voltage at a second change point B that allows the current density to be maintained constant after the decrease is referred to as a maximum voltage. In this case, the surface of the conductive film is polished while maintaining the voltage to be not lower than the minimum voltage and not higher than the maximum voltage.

Abstract: A composite electrolytic processing method makes it possible to remove a conductive film without leaving it in an electrically-insulated state on an underlying barrier film, thereby exposing the barrier film. The electrochemical mechanical polishing method includes: applying a voltage between a first electrode connected to one pole of a power source and a second electrode, connected to the other pole of the power source, for feeding electricity to a conductive film of a polishing object; filling an electrolytic liquid into a space between the first electrode and the conductive film of the polishing object; and pressing and rubbing the conductive film against a polishing surface of a polishing pad to polish the conductive film in such a manner that a barrier film underlying the conductive film becomes gradually exposed from the center toward the periphery of the polishing object.

Abstract: A polishing method can automatically reset polishing conditions according to a state of a polishing member based on data on a polishing profile changing with time, thereby extending life of the polishing member and obtaining flatness of a polished surface with higher accuracy. The polishing method, includes steps of: independently applying a desired pressure by each of pressing portions of a top ring on a polishing object; estimating a polishing profile of the polishing object based on set pressure values, and calculating a recommended polishing pressure value so that a difference between the polishing profile of the polishing object after it is polished under certain polishing conditions and a desired polishing profile becomes smaller; and polishing the polishing object with the recommended polishing pressure value.

Abstract: An etching apparatus comprises a workpiece holder (21) for holding a workpiece (X), a plasma generator (10, 20) for generating a plasma (30) in a vacuum chamber (3), an orifice electrode (4) disposed between the workpiece holder (21) and the plasma generator (10, 20), and a grid electrode (5) disposed upstream of the orifice electrode (4) in the vacuum chamber (3). The orifice electrode (4) has orifices (4a) defined therein. The etching apparatus further comprises a voltage applying unit (25, 26) for applying a voltage between the orifice electrode (4) and the grid electrode (5) to accelerate ions from the plasma (30) generated by the plasma generator (10, 20) and to pass the extracted ions through the orifices (4a) in the orifice electrode (4), for generating a collimated neutral particle beam having an energy ranging from 10 eV to 50 eV.

Abstract: A method of polishing substrates enables the size of a polishing table to be reduced. A surface of a substrate to be polished is brought into contact with a polishing surface of a polishing table in such a manner that a portion of the surface of the substrate extends outwardly from an outer periphery of the polishing surface. The substrate is rotated about its center axis while keeping its surface in contact with the polishing surface of the polishing table. The attitude of the substrate carrier is controlled so that the surface of the substrate is kept parallel with the polishing surface of the polishing table during a polishing operation.

Abstract: A polishing apparatus (30) has a polishing surface (32), a top ring (36) for holding a wafer (W), motors (46, 56) to move the polishing surface (32) and the wafer (W) relative to each other at a relative speed, and a vertical movement mechanism (54) to press the wafer (W) against the polishing surface (32) under a pressing pressure. The polishing apparatus (30) also has a controller (44) to adjust a polishing condition in a non-Preston range in which a polishing rate is not proportional to a product of the pressing pressure and the relative speed. The polishing apparatus (30) can simultaneously achieve uniform supply of a chemical liquid to a surface of the wafer (W) and a uniform polishing rate within the surface of the wafer (W).

Abstract: A polishing method can prevent scratches in a polished surface of a polishing object, caused by foreign matter adhering to a surface of a polishing member, thus preventing the attendant lowering of the yield even when the polishing object is large-sized. The polishing method includes: specifying a foreign matter adhesion position or a foreign matter adhesion area in a surface of the polishing member; and intensively cleaning the foreign matter adhesion position or the foreign matter adhesion area in the surface of the polishing member.

Abstract: A polishing method can automatically reset polishing conditions according to a state of a polishing member based on data on a polishing profile changing with time, thereby extending life of the polishing member and obtaining flatness of a polished surface with higher accuracy. The polishing method, includes steps of: independently applying a desired pressure by each of pressing portions of a top ring on a polishing object; estimating a polishing profile of the polishing object based on set pressure values, and calculating a recommended polishing pressure value so that a difference between the polishing profile of the polishing object after it is polished under certain polishing conditions and a desired polishing profile becomes smaller; and polishing the polishing object with the recommended polishing pressure value.

Abstract: A polishing apparatus (30) has a polishing surface (32), a top ring (36) for holding a wafer (W), motors (46, 56) to move the polishing surface (32) and the wafer (W) relative to each other at a relative speed, and a vertical movement mechanism (54) to press the wafer (W) against the polishing surface (32) under a pressing pressure. The polishing apparatus (30) also has a controller (44) to adjust a polishing condition in a non-Preston range in which a polishing rate is not proportional to a product of the pressing pressure and the relative speed. The polishing apparatus (30) can simultaneously achieve uniform supply of a chemical liquid to a surface of the wafer (W) and a uniform polishing rate within the surface of the wafer (W).

Abstract: A polishing method can automatically reset polishing conditions according to a state of a polishing member based on data on a polishing profile changing with time, thereby extending life of the polishing member and obtaining flatness of a polished surface with higher accuracy. The polishing method, includes steps of: independently applying a desired pressure by each of pressing portions of a top ring on a polishing object; estimating a polishing profile of the polishing object based on set pressure values, and calculating a recommended polishing pressure value so that a difference between the polishing profile of the polishing object after it is polished under certain polishing conditions and a desired polishing profile becomes smaller; and polishing the polishing object with the recommended polishing pressure value.

Abstract: A polishing method can automatically reset polishing conditions according to a state of a polishing member based on data on a polishing profile changing with time, thereby extending life of the polishing member and obtaining flatness of a polished surface with higher accuracy. The polishing method, includes steps of: independently applying a desired pressure by each of pressing portions of a top ring on a polishing object; estimating a polishing profile of the polishing object based on set pressure values, and calculating a recommended polishing pressure value so that a difference between the polishing profile of the polishing object after it is polished under certain polishing conditions and a desired polishing profile becomes smaller; and polishing the polishing object with the recommended polishing pressure value.

Abstract: A method is suitable for cleaning substrates, after polishing, that require a high degree of cleanliness, such as semiconductor wafers, glass substrates, or liquid crystal displays. The method includes polishing a substrate using an abrasive liquid containing abrasive particles, and cleaning a polished surface of the substrate by supplying a cleaning liquid having substantially the same pH as the abrasive liquid or similar pH to the abrasive liquid so that a pH of the abrasive liquid attached to the polished surface of the substrate is not rapidly changed.

Abstract: A polishing method can automatically reset polishing conditions according to a state of a polishing member based on data on a polishing profile changing with time, thereby extending life of the polishing member and obtaining flatness of a polished surface with higher accuracy. The polishing method, includes steps of: independently applying a desired pressure by each of pressing portions of a top ring on a polishing object; estimating a polishing profile of the polishing object based on set pressure values, and calculating a recommended polishing pressure value so that a difference between the polishing profile of the polishing object after it is polished under certain polishing conditions and a desired polishing profile becomes smaller; and polishing the polishing object with the recommended polishing pressure value.

Abstract: An etching apparatus comprises a workpiece holder (21) for holding a workpiece (X), a plasma generator (10, 20) for generating a plasma (30) in a vacuum chamber (3), an orifice electrode (4) disposed between the workpiece holder (21) and the plasma generator (10, 20), and a grid electrode (5) disposed upstream of the orifice electrode (4) in the vacuum chamber (3). The orifice electrode (4) has orifices (4a) defined therein. The etching apparatus further comprises a voltage applying unit (25, 26) for applying a voltage between the orifice electrode (4) and the grid electrode (5) to accelerate ions from the plasma (30) generated by the plasma generator (10, 20) and to pass the extracted ions through the orifices (4a) in the orifice electrode (4). A first collimated neutral particle beam is generated and applied to the workpiece (X) for etching a surface of a processing layer (60) of the workpiece (X).