Abstract: Disclosed is an aluminum-magnesium-silicon composite material that contains an alloy comprising Al, Mg, and Si and can be used favorably as a material for a thermoelectric conversion module, and that has excellent thermoelectric conversion properties. The aluminum-magnesium-silicon composite material contains an alloy comprising Al, Mg and Si, and has an electrical conductivity (?) of 1000-3000 S/cm at 300 K. This aluminum-magnesium-silicon composite material is favorable in the production of a thermoelectric exchange element as a result of having excellent thermoelectric conversion properties.

Abstract: Disclosed is an aluminum-magnesium-silicon composite material that contains an alloy comprising Al, Mg, and Si and can be used favorably as a material for a thermoelectric conversion module, and that has excellent thermoelectric conversion properties. The aluminum-magnesium-silicon composite material contains an alloy comprising Al, Mg and Si, and has an electrical conductivity (?) of 1000-3000 S/cm at 300 K. This aluminum-magnesium-silicon composite material is favorable in the production of a thermoelectric exchange element as a result of having excellent thermoelectric conversion properties.

Abstract: Provided is a magnesium-silicon composite material which contains Mg2Si as an intermetallic compound imposing no burden on the environment, is suitable for use as a material for thermoelectric conversion modules, and has excellent thermoelectric conversion performance. The magnesium-silicon composite material has a dimensionless figure-of-merit parameter at 866K of 0.665 or larger. This magnesium-silicon composite material can have high thermoelectric conversion performance when used in, for example, a thermoelectric conversion module.

Abstract: The present invention provides an infrared laser optical element, in which a dense optical thin film with a low laser absorption and high moisture resistance is formed on the surface thereof, and a manufacturing method for the same. In this infrared laser optical element, the main surface of the optical substrate is smoothed, a BaF2 film formed on said main surface thereof and then a ZnSe film formed on said BaF2 film. The smoothing treatment for the main surface of the optical substrate is carried out by irradiating Xe gas ion beams. The BaF2 and the ZnSe films formed on said BaF2 film are formed on the main surface of the optical substrate, which has been smoothed, by Xe gas ion assisted vapor deposition. Superior performance can be achieved if the series of treatments are carried out under the specified conditions.

Abstract: The present invention provides an infrared laser optical element, in which a dense optical thin film with a low laser absorption and high moisture resistance is formed on the surface thereof, and a manufacturing method for the same. In this infrared laser optical element, the main surface of the optical substrate is smoothed, a BaF2 film formed on said main surface thereof and then a ZnSe film formed on said BaF2 film. The smoothing treatment for the main surface of the optical substrate is carried out by irradiating Xe gas ion beams. The BaF2 and the ZnSe films formed on said BaF2 film are formed on the main surface of the optical substrate, which has been smoothed, by Xe gas ion assisted vapor deposition. Superior performance can be achieved if the series of treatments are carried out under the specified conditions.

Abstract: A method of forming a ZnSe single crystal. The method includes placing a piece of ZnSe polycrystal in a sealed reactor tube with its atmosphere formed of certain gases. The reactor tube is moved through different temperature zones to convert the polycrystal to a single crystal. The single crystal thus formed is cut to produce a single crystal chip or wafer. An impurity is then implanted in the chip or wafer. Lastly the chip or wafer is heated to diffuse the impurity throughout the chip or wafer.

Abstract: A ZnSe thin film with good quality is homoepitaxially grown on a ZnSe single crystal substrate which is produced by the Recrystallization Traveling Heater Method.

Abstract: A n-type ZnSe thin layer is prepared by heating a ZnSe signal crystal substrate in a hydrogen atmosphere under a pressure of from 0.1 Torr. to 10 Torr. at a temperature of from 250.degree. C. to 450.degree. C. while supplying a gaseous organozinc compound, H.sub.2 Se gas and a gaseous organoaluminum compound in such amounts that a molar ratio of Se/Zn is from 10 to 100 and a molar ratio of Al/Zn is from 0.02 to 0.07 to grow the aluminum-doped ZnSe thin film on the ZnSe single crystal substrate.

Abstract: A method for preparing single-crystal ZnSe comprising the steps of:working polycrystalline ZnSe into a rod-shaped starting material;placing the starting material in a reaction vessel;filling the atmosphere of the reaction vessel with an inert gas, nitrogen, H.sub.2 Se gas, or a mixture thereof at from about 0.1 to about 100 Torr; andconverting the polycrystalline ZnSe starting material to single-crystal ZnSe, while maintaining a solid phase, by moving the reaction vessel at a rate of from about 0.05 to about 5 mm/day through a temperature profile consisting of a cool zone AB having a temperature T.sub.1 in the range of from about room temperature to about 100.degree. C., a temperature increasing zone BC having a temperature gradient of from about 50.degree. to about 200.degree. C./cm, a hot zone CD having a temperature T.sub.2 in the range of from about 700.degree. to about 900.degree. C., a temperature decreasing zone DE having a temperature gradient of from about -200.degree. to about -50.degree. C.

Abstract: A voltage and electric field measuring device using light as an operating parameter. An electro-optic crystal, a quarter-wave plate, and a polarization analyzer are arranged in that order in the direction of advancement of applied light. A voltage may be applied to the electro-optic crystal through electrodes arranged thereon. The electro-optic crystal belongs to a cubic system, such as bismuth silicon oxide or bismuth germanium oxide.