Abstract: A resist composition including: a base material component (A), a compound (B1) represented by Formula (b1-1), and a fluorine additive component (F) which contains a fluororesin component (F1) having a constitutional unit (f1) represented by Formula (f-1) and a constitutional unit (f2) represented by Formula (f-2); in Formula (b1-1), Vb01 represents a fluorinated alkylene group, Rb02 represents a fluorine atom or a hydrogen atom, a total number of fluorine atoms as Vb01 and Rb02 is 2 or 3; in Formula (f-1), Rf1 represents a monovalent organic group having a fluorine atom; in Formula (f-2), Rf2 represents a group represented by Formula (f2-r-1), which is a group containing a polycyclic aliphatic cyclic group.

Abstract: A resist composition which contains a polymer compound having a constitutional unit (a01) represented by General Formula (a01-1), which contains a specific acid dissociable group represented by General Formula (a01-r-1) and a constitutional unit (a02) represented by General Formula (a02-1), which contains a specific cyanolactone structure, a proportion of the constitutional unit (a01) is more than 50% by mole and 70% by mole or less

Abstract: A resist composition including: a base material component (A), a compound (B1) represented by Formula (b1-1), and a fluorine additive component (F) which contains a fluororesin component (F1) having a constitutional unit (f1) represented by Formula (f-1) and a constitutional unit (f2) represented by Formula (f-2); in Formula (b1-1), Vb01 represents a fluorinated alkylene group, Rb02 represents a fluorine atom or a hydrogen atom, a total number of fluorine atoms as Vb01 and Rb02 is 2 or 3; in Formula (f-1), Rf1 represents a monovalent organic group having a fluorine atom; in Formula (f-2), Rf2 represents a group represented by Formula (f2-r-1), which is a group containing a polycyclic aliphatic cyclic group.

Abstract: A resist composition including a base material component (A), a compound (BD1) formed of an anion moiety and a cation moiety which is represented by Formula (bd1), and a fluorine additive (F) which includes a fluororesin component (F1) having a constitutional unit (f1) represented by Formula (f-1) and a constitutional unit (f2) represented by Formula (f-2); in Formula (bd1), Rbd1 represents an aryl group containing at least one polycyclic hydrocarbon group as a substituent, and Rbd2 and Rbd3 represent an aryl group or the like; in Formula (f-1), Rf1 represents a monovalent organic group having a fluorine atom; in Formula (f-2), Rf2 represents a group represented by Formula (f2-r-1), which is a group containing a polycyclic aliphatic cyclic group.

Abstract: A method of forming a resist pattern, including forming a resist film on a substrate using a resist composition comprising a base component that exhibits increased solubility in an alkali developing solution and a photo-base generator component; exposing the resist film; baking the exposed resist film, such that, at an exposed portion thereof, the base generated from the photo-base generator component upon the exposure and an acid provided to the resist film are neutralized, and at an unexposed portion of the resist film, the solubility of the base component in an alkali developing solution is increased by the acid provided to the resist film; and subjecting the resist film to alkali development, thereby forming a negative-tone resist pattern in which the unexposed portion of the resist film has been dissolved and removed.

Abstract: A resist composition containing a base component (A) which exhibits changed solubility in a developing solution under the action of acid, and an acid generator component (B) which generates acid upon exposure, dissolved in an organic solvent (S) which contains an alcohol-based solvent, wherein the base component (A) contains a copolymer (A1) that exhibits increased polarity under the action of acid, and the copolymer (A1) is a copolymer in which a structural unit (a2), which is derived from an acrylate ester in which the hydrogen atom bonded to the carbon atom on the ?-position may be substituted with a substituent, and includes a lactone-containing cyclic group, is dispersed uniformly within the copolymer molecule.

Abstract: There are provided a method of forming a resist pattern in which a resist pattern is formed on top of a substrate by using a chemically amplified resist composition and conducting patterning two or more times, the method being capable of reducing the extent of damage, caused by the second patterning, imposed upon the first resist pattern that is formed by the first patterning; as well as a resist composition that is useful for forming the first resist pattern in this method of forming a resist pattern. The method includes forming of a first resist pattern using a resist composition containing a thermal base generator as a chemically amplified resist composition during first patterning, and then conducting a hard bake for baking the first resist pattern under a bake condition such that a base is generated from the thermal base generator, prior to the second patterning.

Abstract: A positive resist composition including: a base material component (A) which exhibits increased solubility in an alkali developing solution under the action of acid; and an acid generator component (B) which generates acid upon exposure; dissolved in an organic solvent (S), wherein the base material component (A) includes a resin component (A1) having 4 types of specific structural units, and the organic solvent (S) includes from 60 to 99% by weight of an alcohol-based organic solvent (S1) and from 1 to 40% by weight of at least one organic solvent (S2) selected from the group consisting of propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether and cyclohexanone.

Abstract: A method of forming a resist pattern, including forming a resist film on a substrate using a resist composition comprising a base component that exhibits increased solubility in an alkali developing solution and a photo-base generator component; exposing the resist film; baking the exposed resist film, such that, at an exposed portion thereof, the base generated from the photo-base generator component upon the exposure and an acid provided to the resist film are neutralized, and at an unexposed portion of the resist film, the solubility of the base component in an alkali developing solution is increased by the acid provided to the resist film; and subjecting the resist film to alkali development, thereby forming a negative-tone resist pattern in which the unexposed portion of the resist film has been dissolved and removed.

Abstract: A resist composition containing a base component (A) which exhibits changed solubility in a developing solution under the action of acid, and an acid generator component (B) which generates acid upon exposure, dissolved in an organic solvent (S) which contains an alcohol-based solvent, wherein the base component (A) contains a copolymer (A1) that exhibits increased polarity under the action of acid, and the copolymer (A1) is a copolymer in which a structural unit (a2), which is derived from an acrylate ester in which the hydrogen atom bonded to the carbon atom on the ?-position may be substituted with a substituent, and includes a lactone-containing cyclic group, is dispersed uniformly within the copolymer molecule.

Abstract: There are provided a method of forming a resist pattern in which a resist pattern is formed on top of a substrate by using a chemically amplified resist composition and conducting patterning two or more times, the method being capable of reducing the extent of damage, caused by the second patterning, imposed upon the first resist pattern that is formed by the first patterning; as well as a resist composition that is useful for forming the first resist pattern in this method of forming a resist pattern. The method includes forming of a first resist pattern using a resist composition containing a thermal base generator as a chemically amplified resist composition during first patterning, and then conducting a hard bake for baking the first resist pattern under a bake condition such that a base is generated from the thermal base generator, prior to the second patterning.

Abstract: A positive resist composition including: a base material component (A) which exhibits increased solubility in an alkali developing solution under the action of acid; and an acid generator component (B) which generates acid upon exposure; dissolved in an organic solvent (S), wherein the base material component (A) includes a resin component (A1) having 4 types of specific structural units, and the organic solvent (S) includes from 60 to 99% by weight of an alcohol-based organic solvent (S1) and from 1 to 40% by weight of at least one organic solvent (S2) selected from the group consisting of propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether and cyclohexanone.