Patents by Inventor Hirokuni Tokuda

Hirokuni Tokuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing a field effect transistor
    Patent number: 4157610
    Abstract: The exposed surface of a semi-insulating compound semiconductor substrate is anodized while light is irradiated to the exposed surface to form a gate insulating film on the substrate between source and drain regions.
    Type: Grant
    Filed: August 18, 1977
    Date of Patent: June 12, 1979
    Assignee: Tokyo Shibaura Electric Co., Ltd.
    Inventors: Kiyoo Kamei, Toshiaki Ikoma, Hirokuni Tokuda
  • Method for manufacturing compound semiconductor devices
    Patent number: 4116722
    Abstract: A method for manufacturing compound semiconductor devices includes a step of forming a first oxidized film on a GaAs body and heating it at a high temperature. A second oxidized film is thereafter formed on the body which includes the first oxidized film so as to change it properties, for example, to be easily etched with an etchant.
    Type: Grant
    Filed: August 18, 1977
    Date of Patent: September 26, 1978
    Assignees: Tokyo Shibaura Electric Co., Toshiaki Ikoma
    Inventors: Kiyoo Kamei, Toshiaki Ikoma, Hirokuni Tokuda, Jeffrey Frey