Abstract: A first dummy via pattern having high density is arranged in the vicinity of first and second wirings on a semiconductor device, and a second dummy via pattern having low density is arranged in a distant region from the first and second wirings, with reference to the first dummy via pattern. Accordingly, it is possible to suppress expansion of the file size of layout CAD data due to dummy vias, while complying with a design standard regulated for each semiconductor process, regardless of the presence or absence of vias which connect the first wirings to the second wirings.

Abstract: Disclosed is a semiconductor device having a multilayer wiring structure, in which a dummy pattern is formed in a wiring void with favorable manufacturing efficiency. In a semiconductor device having a multilayer wiring structure, dummy pattern (21) is formed in relatively narrow wiring void (Area_S1) so as to extend in a direction different from that of dummy patterns (22, 23) formed in relatively wide wiring void (Area_S2).

Abstract: Disclosed is a semiconductor device having a multilayer wiring structure, in which a dummy pattern is formed in a wiring void with favorable manufacturing efficiency. In a semiconductor device having a multilayer wiring structure, dummy pattern (21) is formed in relatively narrow wiring void (Area_S1) so as to extend in a direction different from that of dummy patterns (22, 23) formed in relatively wide wiring void (Area_S2).

Abstract: A semiconductor integrated circuit device including a dummy via is disclosed. In the semiconductor integrated circuit device, problems such as reduction in the designability and increase in fabrication cost which result from the existence of a dummy wire connected to the dummy via are suppressed. The semiconductor integrated circuit device includes a substrate and three or more wiring layers formed on the substrate. The dummy via connects between a first wiring layer and a second wiring layer. The dummy wire connected to the dummy via exists in the second wiring layer. A protrusion amount of the dummy wire is smaller than a protrusion amount of an intermediate wire included in a stacked via structure.

Abstract: Circuit data on a semiconductor integrated circuit, design constraints as to design of the semiconductor integrated circuit, air gap information on air gap creation in the circuit data, and an air gap volume constraint specifying an allowable range for an air gap volume value are received. The sum total of the values of the volumes of air gaps created in the circuit data according to the air gap information is calculated. Upon detection that the calculated sum total of the air gap volume values falls outside the allowable range specified by the air gap volume constraint, the circuit data is optimized so that the design constraints are satisfied and the sum total of the air gap volume values falls within the allowable range.

Abstract: A semiconductor integrated circuit device including a dummy via is disclosed. In the semiconductor integrated circuit device, problems such as reduction in the designability and increase in fabrication cost which result from the existence of a dummy wire connected to the dummy via are suppressed. The semiconductor integrated circuit device includes a substrate and three or more wiring layers formed on the substrate. The dummy via connects between a first wiring layer and a second wiring layer. The dummy wire connected to the dummy via exists in the second wiring layer. A protrusion amount of the dummy wire is smaller than a protrusion amount of an intermediate wire included in a stacked via structure.

Abstract: As a method for considering the adverse influence of the stresses caused form the pad, two sorts of methods are provided. As one method, while delay variation values of cells caused by an adverse influence of stresses are calculated, the calculated delay variation values are applied to the cells so as to perform a timing analysis, and the like by considering the adverse influence of the stresses. Then, in order that a flip chip type LSI is designed by employing a result of the above-described analysis in such a manner that the adverse influence of the stresses applied from the pad is not given to vias, wiring lines, and cells located under the pad, such a physical structure that no via is arranged under the pad is employed.

Abstract: Circuit data on a semiconductor integrated circuit, design constraints as to design of the semiconductor integrated circuit, air gap information on air gap creation in the circuit data, and an air gap volume constraint specifying an allowable range for an air gap volume value are received. The sum total of the values of the volumes of air gaps created in the circuit data according to the air gap information is calculated. Upon detection that the calculated sum total of the air gap volume values falls outside the allowable range specified by the air gap volume constraint, the circuit data is optimized so that the design constraints are satisfied and the sum total of the air gap volume values falls within the allowable range.

Abstract: In an automatic floorplanning approach, flexibility is given to the shape and area of a black-box block set in advance, so that the shape and area of the black-box block are made to reflect influences of line congestion and the like at the chip level, and also become less influential on blocks other than the black-box block.