Abstract: In the SiC substrate, when resistivities at a plurality of first measurement points that are in a region inside a boundary located 5 mm inward from an outer circumferential end thereof and that include a center and a plurality of measurement points separated by 10 mm from each other in the [11-20] direction or the [?1-120] direction from the center, and at two second measurement points that are located 1 mm inward from the outer circumferential end and located in each of the [11-20] direction from the center and the [?1-120] direction from the center are measured, a difference between the maximum resistivity and the minimum resistivity among the resistivities of each of the plurality of first measurement points and the two second measurement points is 2 m?·cm or less, and a region other than a high nitrogen concentration region called a facet is included.

Abstract: A gas sensor includes a wiring board having an opening, a sensor element disposed within the opening and having a detection section and a heater section, and a plurality of electricity conducting members each of which has a first end portion joined to the wiring board and a second end portion joined to the sensor element and which establish electrical connection between the wiring board and the sensor element. The plurality of electricity conducting members fixedly suspend the sensor element within the opening. At least one of the electricity conducting members is a particular electricity conducting member having a plate-like shape, and the particular electricity conducting member includes at least one bent portion between the second end portion joined to the sensor element and the first end portion joined to the wiring board, the bent portion being bent in a thickness direction of the particular electricity conducting member.

Abstract: An optical response measuring device is provided with a light source, first and second wavelength conversion elements and a light intensity sensor array. The light source generates a pair of light beams including light beams of first and second wavelengths, and the first wavelength conversion element generates measurement light. The measurement light is irradiated on an object for measurement and a detection light having first phase and second phase is obtained in response to this irradiation. A reference light that carries the phase of the pair of the pair light beams and the detection light both pass through a second wavelength conversion element to obtain a modulated reference light have first and second intensities. The first and second local intensities are then measured by the light intensity sensor array.

Abstract: A ceramic electronic component includes a ceramic body, baked external electrodes, and plated external electrodes, and glass layers derived from a glass material included in a conductive paste of the baked external electrodes, are provided at interfaces between the baked external electrodes and the ceramic body, such that the glass layers extend from the interfaces between the ceramic body and the baked external electrodes to a surface of the ceramic body that does not contain the baked external electrodes.

Abstract: An optical response measuring device is provided with a light source, first and second wavelength conversion elements, and a light intensity sensor array. The light source generates a pair of light beams including light beams of first and second wavelengths. The first wavelength conversion element generates measurement light of a wavelength whose phase is maintained with relative to the pair of light beams incident thereon. The measurement light is irradiated to an object for measurement. The detected light is then made incident on the second wavelength conversion element. Reference light carries the phase of the pair of light beams and light for which the phase is to be determined in the detection light, from which the second wavelength conversion element generates modulated reference light. The modulated reference light is modulated to have first and second local intensities, which are then measured by the light intensity sensor array.

Abstract: A ceramic electronic component includes a ceramic body, baked external electrodes, and plated external electrodes, and glass layers derived from a glass material included in a conductive paste of the baked external electrodes, are provided at interfaces between the baked external electrodes and the ceramic body, such that the glass layers extend from the interfaces between the ceramic body and the baked external electrodes to a surface of the ceramic body that does not contain the baked external electrodes.

Abstract: The present invention includes a slanted periodically poled device 12 including a light input surface 12a and a light output surface 12b parallel to each other and a terahertz wave input surface 12c orthogonal to the light input surface 12a and the light output surface 12b, a pump beam source 14 which emits pump beam 1 perpendicularly to the light input surface 12a, and a photodetector 16 which detects an up-conversion signal beam A converted from a terahertz wave 3 emitted perpendicularly from the light output surface 12b. The slanted periodically poled device 12 is configured to generate the up-conversion signal beam A in the same direction as and in parallel with the pump beam 1 by quasi phase matching between the terahertz wave 3 perpendicularly incident from the terahertz wave input surface 12c and the pump beam 1.

Abstract: An object of the present invention is to produce a non-conventional high-quality BNA single crystal. Another object of the present invention is to provide a process for producing the above-described high-quality BNA single crystal. Specifically, the present invention provides a BNA crystal characterized by having a half-value width of diffraction peak X-ray intensity of 100 seconds or less in a rocking curve measurement by X-ray diffraction method.

Abstract: The present invention includes a slanted periodically poled device 12 including a light input surface 12a and a light output surface 12b parallel to each other and a terahertz wave input surface 12c orthogonal to the light input surface 12a and the light output surface 12b, a pump beam source 14 which emits pump beam 1 perpendicularly to the light input surface 12a, and a photodetector 16 which detects an up-conversion signal beam A converted from a terahertz wave 3 emitted perpendicularly from the light output surface 12b. The slanted periodically poled device 12 is configured to generate the up-conversion signal beam A in the same direction as and in parallel with the pump beam 1 by quasi phase matching between the terahertz wave 3 perpendicularly incident from the terahertz wave input surface 12c and the pump beam 1.

Abstract: A mobility measuring apparatus includes a storage unit that respectively stores a relationship between the mobility ? of carriers in a semiconductor and a decay constant ? of the carriers and a relationship between a reflectivity R of the semiconductor to a terahertz light and the decay constant ? of the carriers, a light radiating unit that radiates a terahertz light to the semiconductor as a sample, a detecting unit that detects a reflected light of the sample to the radiated terahertz light, a reflectivity calculating unit that calculates the reflectivity Rexp of the sample by determining a ratio of an intensity of the reflected light relative to an intensity of the radiated terahertz light, an obtaining unit that obtains the decay constant ?exp of the sample corresponding to the reflectivity Rexp of the sample by making reference to the stored relationship between the reflectivity R and the decay constant ? of the carriers, and a mobility calculating unit that calculates the mobility ?exp of the sample fr

Abstract: To provide a monochromatic wavelength variable terahertz wave generation/detection system that has high detection sensitivity at room temperature and that can quickly operate at the same time, excitation light of monochromatic wavelength generated from one excitation light source is inputted to a wavelength variable terahertz wave source and a nonlinear light conversion terahertz wave detector through an excitation light phase control optical system shown below.

Abstract: An LED drive circuit that sufficiently exhibits the performance of an LED element to obtain a favorable luminance at room temperature, includes a constant-current circuit including an LED element, a constant-current output unit, and a temperature sensing element having a negative resistance-temperature coefficient. The LED element is connected to the constant-current output unit in series. The constant-current output unit is connected to the LED element in parallel. Due to changes in the resistance value of the constant-current output unit caused by changes in temperature, the value of a current passing through the LED element is increased at room temperature and the value of a current passing through the temperature sensing element is reduced at high temperature.

Abstract: A golf club shaft is formed by curing wound fiber-containing prepregs and has a tip side and a butt side. In an embodiment, the prepregs include pitch-based carbon fiber-containing prepregs with a low elastic modulus, which are wound on the tip side, and polyacrylonitrile (PAN) based carbon fiber-containing prepregs, which are wound in an outermost layer on the tip side. In another embodiment, the prepregs include low-elasticity carbon fiber-containing prepregs wound on the tip side, and high-elasticity carbon fiber-containing prepregs wound on the butt side. In yet another embodiment, the prepregs include low-elasticity carbon-containing prepregs, which are wound on the butt side, and high elasticity carbon-containing prepregs, which are wound on the tip side.

Abstract: A nondestructive carrier concentration measuring device (100) includes: a storage unit (101) that stores a correlation between the reflectance of an inorganic compound semiconductor against terahertz light and a carrier concentration; a light radiation unit (103) that irradiates the terahertz light (105) to the inorganic compound semiconductor as a sample; a detection unit (109) that detects reflected light (108) of the inorganic compound semiconductor against the irradiated terahertz light (105); a reflectance calculation unit (111) that compares the irradiated terahertz light (105) with the reflected light (108) and calculates an actual measurement value of the reflectance of the inorganic compound semiconductor; and a read unit (113) that refers to the stored correlation and reads the carrier concentration of the sample corresponding to the actual measurement value of the reflectance.

Abstract: An object of the present invention is to produce a non-conventional high-quality BNA single crystal. Another object of the present invention is to provide a process for producing the above-described high-quality BNA single crystal. Specifically, the present invention provides a BNA crystal characterized by having a half-value width of diffraction peak X-ray intensity of 100 seconds or less in a rocking curve measurement by X-ray diffraction method.

Abstract: A golf club grip having a double construction includes a cylindrical inside layer part made of a first rubber having a first hardness, and a cylindrical outside layer part made of a second rubber having a second hardness lower than the first hardness, which part covers the cylindrical inside layer part. The cylindrical inside layer part has a length 1 to 4 cm longer than the length of a half of the entire length of the grip. The cylindrical inside layer part is provided with a plurality of longitudinal projecting strips formed on the outer peripheral surface thereof, and the plurality of longitudinal projecting strips extend from the proximal end side of the cylindrical inside layer part to a portion of 70 to 80% of the entire length of the cylindrical inside layer part along the axis line direction of the cylindrical inside layer part, and are formed at fixed intervals in the circumferential direction.

Abstract: To provide a monochromatic wavelength variable terahertz wave generation/detection system that has high detection sensitivity at room temperature and that can quickly operate at the same time, excitation light of monochromatic wavelength generated from one excitation light source is inputted to a wavelength variable terahertz wave source and a nonlinear light conversion terahertz wave detector through an excitation light phase control optical system shown below.

Abstract: A mobility measuring apparatus includes a storage unit that respectively stores a relationship between the mobility ? of carriers in a semiconductor and a decay constant ? of the carriers and a relationship between a reflectivity R of the semiconductor to a terahertz light and the decay constant ? of the carriers, a light radiating unit that radiates a terahertz light to the semiconductor as a sample, a detecting unit that detects a reflected light of the sample to the radiated terahertz light, a reflectivity calculating unit that calculates the reflectivity Rexp of the sample by determining a ratio of an intensity of the reflected light relative to an intensity of the radiated terahertz light, an obtaining unit that obtains the decay constant ?exp of the sample corresponding to the reflectivity Rexp of the sample by making reference to the stored relationship between the reflectivity R and the decay constant ? of the carriers, and a mobility calculating unit that calculates the mobility ?exp of the sample fr

Abstract: An electronic component includes a layered structure, an isolated electrode, first and second external electrodes, and first and second internal electrodes. The layered structure includes laminated ceramic layers laminated. The first and second external electrodes are disposed on the surface of the layered structure. The isolated electrode extends in the x-axis direction inside the layered structure and is not connected to the first and second external electrodes. The first internal electrode faces a first end of the isolated electrode with a ceramic layer therebetween. The second internal electrode faces a second end of the isolated electrode with a ceramic layer therebetween. When viewed in plan from the z-axis direction, the width of the isolated electrode in the y-axis direction decreases in the direction from the first end to the second end of the isolated electrode.

Abstract: A nondestructive carrier concentration measuring device (100) includes: a storage unit (101) that stores a correlation between the reflectance of an inorganic compound semiconductor against terahertz light and a carrier concentration; a light radiation unit (103) that irradiates the terahertz light (105) to the inorganic compound semiconductor as a sample; a detection unit (109) that detects reflected light (108) of the inorganic compound semiconductor against the irradiated terahertz light (105); a reflectance calculation unit (111) that compares the irradiated terahertz light (105) with the reflected light (108) and calculates an actual measurement value of the reflectance of the inorganic compound semiconductor; and a read unit (113) that refers to the stored correlation and reads the carrier concentration of the sample corresponding to the actual measurement value of the reflectance.