Abstract: An image capturing device includes a pixel unit and a buffer. In the pixel unit, pixels are arranged in a matrix, wherein each pixel includes a photoelectric conversion unit, a transfer transistor, and an amplification transistor. In the pixel unit, first and second pixel rows are arranged in a column direction. A first pixel row first pixel includes a first switch that changes a capacitance value at an input node of an amplification transistor included in the first pixel. A second pixel row second pixel includes a second switch that changes a capacitance value at an input node of an amplification transistor included in the second pixel. The buffer drives the first and second switches. A buffer output node is electrically connected to a first switch input node and a second switch input node to be common to the first switch input node and the second switch input node.

Abstract: The capacitance value of the input node is set to a first capacitance value when a first potential is supplied to the switch. The capacitance value of the input node is set to a second capacitance value which is smaller than the first capacitance value when a second potential is supplied to the switch. The potential supplied to the switch is kept at a third potential which is a potential between the first potential and the second potential in a part of at least one of a period until the potential is set to the first potential from the second potential and a period until the potential is set to the second potential from the first potential.

Abstract: A solid-state imaging device has: a counter dope region of a first conductivity type which is formed so as to surround a drain region of a transfer transistor of the solid-state imaging device and in which impurity concentration of the first conductivity type is lower than that of the drain region; and an isolating region of a second conductivity type which is formed in a deep region below channel regions of a plurality of transistors and in which impurity concentration of the second conductivity type is higher than that of a well region, wherein a depth position of a lower surface of the counter dope region is deeper than a depth position of a lower surface of a buried channel region.

Abstract: Provided is a photoelectric conversion device including: a photoelectric conversion portion in a substrate that photoelectrically converts incident light to generate charges; a transfer transistor including a control electrode on the substrate that transfers the charges from the photoelectric conversion portion; wiring layers above the control electrode; a first wiring in a first wiring layer of the wiring layers that is the closest to the substrate; and a drive wiring in a second wiring layer above the first wiring layer, a control signal for controlling the transfer transistor being transferred to the control electrode via the drive wiring and first wiring and, in a plan view, at least part of the first wiring overlapping with at least part of the control electrode and at least part of an edge of the first wiring extending along an edge of the control electrode on a side facing the photoelectric conversion portion.

Abstract: Provided is an image pickup apparatus, including: first and second photoelectric conversion elements; first and second transfer transistors configured to transfer charges respectively from the first and second photoelectric conversion elements when the first and second transfer transistors are brought into conductive states, respectively; a floating diffusion region configured to accumulate the charges transferred by the first and second transfer transistors; an amplifying transistor configured to output a signal corresponding to the charges transferred by the first and second transfer transistors; first and second drive wirings, which are electrically connected to gates of the first and second transfer transistors, respectively; and a conductive member, which is configured to electrically connect the floating diffusion region and a gate of the amplifying transistor to each other, and is configured to extend beyond the floating diffusion region in a plan view while being opposed to the first drive wiring.

Abstract: The capacitance value of the input node is set to a first capacitance value when a first potential is supplied to the switch. The capacitance value of the input node is set to a second capacitance value which is smaller than the first capacitance value when a second potential is supplied to the switch. The potential supplied to the switch is kept at a third potential which is a potential between the first potential and the second potential in a part of at least one of a period until the potential is set to the first potential from the second potential and a period until the potential is set to the second potential from the first potential.

Abstract: An image capturing device includes a pixel unit and a buffer. In the pixel unit, pixels are arranged in a matrix, wherein each pixel includes a photoelectric conversion unit, a transfer transistor, and an amplification transistor. In the pixel unit, first and second pixel rows are arranged in a column direction. A first pixel row first pixel includes a first switch that changes a capacitance value at an input node of an amplification transistor included in the first pixel. A second pixel row second pixel includes a second switch that changes a capacitance value at an input node of an amplification transistor included in the second pixel. The buffer drives the first and second switches. A buffer output node is electrically connected to a first switch input node and a second switch input node to be common to the first switch input node and the second switch input node.

Abstract: An image pickup apparatus includes photoelectric conversion units each including a first semiconductor region of a first conductivity type and a semiconductor region of a second conductivity type disposed in contact with the first semiconductor region, a potential barrier formed between photoelectric conversion units, and a contact plug disposed in an image sensing area. The number of contact plugs is smaller than the number of photoelectric conversion units. The photoelectric conversion units include first and second photoelectric conversion units and are arranged such that at least two first photoelectric conversion units are adjacent in a first direction. The potential barrier includes a first part formed between the two first photoelectric conversion units disposed adjacently and a second part formed between first and second photoelectric conversion units adjacent to each other. The contact plug is located closer to the first part than to the second part.

Abstract: A solid-state image pickup device includes a plurality of pixels each including a photoelectric conversion section that generates an electric charge in accordance with incident light and a junction field-effect transistor that outputs an image signal in accordance with the electric charge generated by the photoelectric conversion section. The solid-state image pickup device includes a first element isolation region using an insulator and a second element isolation region using a pn junction, the first element isolation region and the second element isolation region being arranged in a region in which the plurality of pixels are arranged.

Abstract: Provided is an image pickup apparatus, including: first and second photoelectric conversion elements; first and second transfer transistors configured to transfer charges respectively from the first and second photoelectric conversion elements when the first and second transfer transistors are brought into conductive states, respectively; a floating diffusion region configured to accumulate the charges transferred by the first and second transfer transistors; an amplifying transistor configured to output a signal corresponding to the charges transferred by the first and second transfer transistors; first and second drive wirings, which are electrically connected to gates of the first and second transfer transistors, respectively; and a conductive member, which is configured to electrically connect the floating diffusion region and a gate of the amplifying transistor to each other, and is configured to extend beyond the floating diffusion region in a plan view while being opposed to the first drive wiring.

Abstract: A solid-state image pickup device includes a plurality of pixels each including a photoelectric conversion section that generates an electric charge in accordance with incident light and a junction field-effect transistor that outputs an image signal in accordance with the electric charge generated by the photoelectric conversion section. The solid-state image pickup device includes a first element isolation region using an insulator and a second element isolation region using a pn junction, the first element isolation region and the second element isolation region being arranged in a region in which the plurality of pixels are arranged.

Abstract: An image pickup apparatus according to one or more embodiments includes a power line and first through fourth photodiodes. The first, second, and third photodiodes are arranged along a first direction so that the first photodiode is adjacent to the second photodiode, and the second photodiode is adjacent to the third photodiode. The power line includes a first conductor disposed along the first direction and a second conductor disposed along a second direction that intersects the first direction. The second conductor is disposed on a region between the second and third photodiodes. First and second transistors corresponding to the first and second photodiode, respectively, are connected to the power line. The fourth photodiode is disposed adjacent to the second photodiode in the second direction. A third transistor corresponding to the fourth photodiode is connected to the power line.