Patents by Inventor Hiromasa Yamanashi
Hiromasa Yamanashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8766183Abstract: The astigmatism control processing time is decreased to 1 second or less by improving the astigmatic difference measurement accuracy. A charged particle beam device includes: a stage on which a sample is loaded; a transport mechanism which carries the sample onto the stage; a charged particle beam optical system which irradiates the sample on the stage with a charged particle beam and detects secondary charged particles generated from the sample; and a controller which determines setup parameters for the charged particle beam optical system and controls the charged particle beam optical system. The controller registers and holds electro-optical system setup parameters for irradiation with a beam tilted from a normal line on the sample as the charged particle beam, compares observation images obtained by the tilted beam, measures the amount and direction of movement and calculates the amount of astigmatism correction from the amount of movement and the direction.Type: GrantFiled: September 10, 2009Date of Patent: July 1, 2014Assignee: Hitachi High-Technologies CorporationInventors: Muneyuki Fukuda, Hiromasa Yamanashi, Yasunari Sohda
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Publication number: 20130175447Abstract: Provided is a scanning electron microscope equipped with a high-speed and high-precision astigmatism measuring means to be used when both astigmatism generated by an electron-beam column and astigmatism generated from the surroundings of a measuring sample exist. This scanning electron microscope is characterized in controlling an astigmatism corrector (201) with high-speed and high-precision, to correct the astigmatism, by using both a method of obtaining the astigmatism from the qualities of two-dimensional images to be acquired upon changing the intensity of the astigmatism corrector (201), and a method of measuring the astigmatism from the change in the position displacement of an electron beam that occurs when the electron beam is tilted using a tilt deflector (202).Type: ApplicationFiled: August 26, 2011Publication date: July 11, 2013Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Yasunari Sohda, Hiromasa Yamanashi, Muneyuki Fukuda, Takeyoshi Ohashi, Osamu Komuro
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Publication number: 20120119085Abstract: The present invention has an object to perform specimen charge measurement or focusing at a high speed and with high precision also for a specimen in which fixed charge and induced charge may be mixedly present. As one mode to achieve the object, there are proposed a specimen potential measuring method and a device to implement the method characterized in that when specimen potential information obtained by a first specimen potential measuring device disposed outside a specimen chamber or specimen potential information beforehand obtained is equal to or more than a predetermined threshold value or is more than the threshold value, measurement of specimen potential is selectively conducted by use of a second specimen potential measuring device in the specimen chamber.Type: ApplicationFiled: July 2, 2010Publication date: May 17, 2012Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Tatsuaki Ishijima, Osamu Nasu, Muneyuki Fukuda, Takeyoshi Ohashi, Hiromasa Yamanashi, Takuji Miyamoto, Kei Sakai
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Patent number: 8026482Abstract: Potentials at a plurality of points on a diameter of a semiconductor wafer 13 are measured actually. Then, a potential distribution on the diameter is obtained by spline interpolation of potentials between the actually-measured points adjacent in the diameter direction. Thereafter, a two-dimensional interpolation function regarding a potential distribution in the semiconductor wafer 13 is obtained by spline interpolation of potentials between points adjacent in the circumferential direction around the center of the semiconductor wafer 13. Then, a potential at a observation point on the semiconductor wafer 13 is obtained by substituting the coordinate value of this observation point into the two-dimensional interpolation function. As a result, a potential distribution due to electrification of the wafer can be estimated accurately, and the retarding potential can be set to a suitable value.Type: GrantFiled: June 19, 2008Date of Patent: September 27, 2011Assignee: Hitachi High-Technologies CorporationInventors: Muneyuki Fukuda, Hiromasa Yamanashi, Sayaka Tanimoto, Yasunari Souda, Osamu Nasu
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Publication number: 20110147586Abstract: The astigmatism control processing time is decreased to 1 second or less by improving the astigmatic difference measurement accuracy. A charged particle beam device includes: a stage on which a sample is loaded; a transport mechanism which carries the sample onto the stage; a charged particle beam optical system which irradiates the sample on the stage with a charged particle beam and detects secondary charged particles generated from the sample; and a controller which determines setup parameters for the charged particle beam optical system and controls the charged particle beam optical system. The controller registers and holds electro-optical system setup parameters for irradiation with a beam tilted from a normal line on the sample as the charged particle beam, compares observation images obtained by the tilted beam, measures the amount and direction of movement and calculates the amount of astigmatism correction from the amount of movement and the direction.Type: ApplicationFiled: September 10, 2009Publication date: June 23, 2011Inventors: Muneyuki Fukuda, Hiromasa Yamanashi, Yasunari Sohda
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Patent number: 7679056Abstract: The present invention provides a pattern inspection technique that enables measurement and inspection of a fine pattern by a charged particle beam to be performed with high throughput.Type: GrantFiled: March 16, 2007Date of Patent: March 16, 2010Assignee: Hitachi High-Technologies CorporationInventors: Hiromasa Yamanashi, Muneyuki Fukuda, Sayaka Tanimoto, Yasunari Sohda
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Patent number: 7655907Abstract: It is to provide a technology that can quickly process many measurement points on a substrate by a primary charged particle beam. In a control system, with respect to each measurement point (irradiation position of the primary charged particle beam) on a wafer, a calculator obtains a probability of a surface potential at a relevant measurement point that is obtained from a surface potential distribution function of the wafer and is stored in a data storage unit. Based on the probability, the calculator determines an amplitude of a set parameter (for example, retarding voltage) of charged particle optics at the relevant measurement point. Then the calculator checks the focus state of the primary charged particle beam by changing the set parameter in the range of the determined amplitude, and determines the set parameter to be used for measurement.Type: GrantFiled: February 9, 2007Date of Patent: February 2, 2010Assignee: Hitachi High-Technologies CorporationInventors: Sayaka Tanimoto, Hiromasa Yamanashi, Muneyuki Fukuda, Yasunari Sohda
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Publication number: 20090140143Abstract: Potentials at a plurality of points on a diameter of a semiconductor wafer 13 are measured actually. Then, a potential distribution on the diameter is obtained by spline interpolation of potentials between the actually-measured points adjacent in the diameter direction. Thereafter, a two-dimensional interpolation function regarding a potential distribution in the semiconductor wafer 13 is obtained by spline interpolation of potentials between points adjacent in the circumferential direction around the center of the semiconductor wafer 13. Then, a potential at a observation point on the semiconductor wafer 13 is obtained by substituting the coordinate value of this observation point into the two-dimensional interpolation function. As a result, a potential distribution due to electrification of the wafer can be estimated accurately, and the retarding potential can be set to a suitable value.Type: ApplicationFiled: June 19, 2008Publication date: June 4, 2009Inventors: Muneyuki FUKUDA, Hiromasa Yamanashi, Sayaka Tanimoto, Yasunari Souda, Osamu Nasu
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Publication number: 20070272858Abstract: It is to provide a technology that can quickly process many measurement points on a substrate by a primary charged particle beam. In a control system, with respect to each measurement point (irradiation position of the primary charged particle beam) on a wafer, a calculator obtains a probability of a surface potential at a relevant measurement point that is obtained from a surface potential distribution function of the wafer and is stored in a data storage unit. Based on the probability, the calculator determines an amplitude of a set parameter (for example, retarding voltage) of charged particle optics at the relevant measurement point. Then the calculator checks the focus state of the primary charged particle beam by changing the set parameter in the range of the determined amplitude, and determines the set parameter to be used for measurement.Type: ApplicationFiled: February 9, 2007Publication date: November 29, 2007Inventors: Sayaka Tanimoto, Hiromasa Yamanashi, Muneyuki Fukuda, Yasunari Sohda
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Publication number: 20070221844Abstract: The present invention provides a pattern inspection technique that enables measurement and inspection of a fine pattern by a charged particle beam to be performed with high throughput.Type: ApplicationFiled: March 16, 2007Publication date: September 27, 2007Inventors: Hiromasa Yamanashi, Muneyuki Fukuda, Sayaka Tanimoto, Yasunari Sohda