Abstract: A method for decontaminating the nickel-based alloy includes oxidization of an oxide film accumulating radioactive nuclides with a first oxidizing agent to elute nickel into a solvent and thus to transform into a low-nickel film (S13 to S15). Elution amounts of Nickel, Chromium, and iron in the solvent are measured in the step S15 of the first oxidation step. Based on the elution amount, a second oxidizing agent is selected in the step S16. With the second oxidizing agent, the low-nickel film is oxidized to elute Chromium and thus to transform into an iron-concentrated film (S17 to S19). The iron-concentrated film is reduced with a reducing agent after the second oxidizing step including the steps of S13 to S19 to be dissolved and thus to be removed (S22).

Abstract: A radioactive substance is effectively suppressed by an oxide-film removal step of removing an oxide film on a metallic material surface with which a coolant containing the radioactive substance comes in contact, and a titanium-oxide deposition step of depositing a titanium oxide on the metallic material surface after the oxide film has been removed.

Abstract: A radioactive substance is effectively suppressed by an oxide-film removal step of removing an oxide film on a metallic material surface with which a coolant containing the radioactive substance comes in contact, and a titanium-oxide deposition step of depositing a titanium oxide on the metallic material surface after the oxide film has been removed.

Abstract: The present invention relates to a method and an apparatus for suppressing adhesion of a radioactive substance, capable of suppressing adhesion of the radioactive substance onto the surface of a metallic material forming a structural member in a nuclear plant. On the surface of the metallic material forming the structural member in a nuclear power generation plant, e.g., a surface 32A of a pipe 32, an adhesion-suppressing substance 34 containing titanium oxide as a titanium compound is disposed, and a part on which the adhesion-suppressing substance 34 has been formed, is held at 80° C. or higher. The adhesion-suppressing substance 34 is formed on the surface 32A of the pipe 32 by spraying a solution or a suspension liquid of the substance.

Abstract: Chemical decontamination method of dissolving oxide film adhered to contaminated component including, preparing decontamination solution in which ozone is dissolved and oxidation additive agent, which suppresses corrosion of metal base of the contaminated component, is added, and applying the decontamination solution to the contaminated component, thereby to remove the oxide film by oxidation.

Abstract: Chemical decontamination method of dissolving oxide film adhered to contaminated component including, preparing decontamination solution in which ozone is dissolved and oxidation additive agent, which suppresses corrosion of metal base of the contaminated component, is added, and applying the decontamination solution to the contaminated component, thereby to remove the oxide film by oxidation.

Abstract: A polishing pad of the present invention contains a water-insoluble matrix material comprising a crosslinked polymer such as a crosslinked 1,2-polybutadiene and water-soluble particles dispersed in the material, such as saccharides. The solubility of the water-soluble particles in water is 0.1 to 10 wt % at 25° C., and the amount of water-soluble particles eluted from the pad when the pad is immersed in water is 0.05 to 50 wt % at 25° C. Further, in the polishing pad of the present invention, the solubility of the water-soluble particles in water is 0.1 to 10 wt % at 25° C. at a pH of 3 to 11, and solubility thereof in water at 25° C. at a pH of 3 to 11 is within ±50% of solubility thereof in water at 25° C. at a pH of 7. In addition, the water-soluble particles contain an amino group, an epoxy group, an isocyanurate group, and the like. This polishing pad has good slurry retainability even if using slurries different in pH and also has excellent polishing properties such as a polishing rate and planarity.

Abstract: A polishing pad, a polishing laminated pad and a semiconductor wafer polishing method all of which prevent a leak of slurry from the gap between a polishing substrate and a reduction in polishing efficiency caused by a scratched and a window member and enable the optical detection of the polishing end point to be carried out efficiently.

Abstract: A polishing pad of the present invention contains a water-insoluble matrix material comprising a crosslinked polymer such as a crosslinked 1,2-polybutadiene and water-soluble particles dispersed in the material, such as saccharides. The solubility of the water-soluble particles in water is 0.1 to 10 wt % at 25° C., and the amount of water-soluble particles eluted from the pad when the pad is immersed in water is 0.05 to 50 wt % at 25° C. Further, in the polishing pad of the present invention, the solubility of the water-soluble particles in water is 0.1 to 10 wt % at 25° C. at a pH of 3 to 11, and solubility thereof in water at 25° C. at a pH of 3 to 11 is within ±50% of solubility thereof in water at 25° C. at a pH of 7. In addition, the water-soluble particles contain an amino group, an epoxy group, an isocyanurate group, and the like.