Patents by Inventor Hiromi Asakura
Hiromi Asakura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11398372Abstract: A plasma processing apparatus that performs plasma processing to a substrate held on a transport carrier including a frame and a holding sheet that covers an opening of the frame includes: a transport mechanism that transports the transport carrier; a position measuring section that measures a position of the substrate to the frame; a plasma processing section that includes a plasma processing stage on which the transport carrier is loaded and a cover that covers the frame and a part of the holding sheet loaded on the plasma processing stage, and has a window section for exposing a part of the substrate; and a control section that controls the transport mechanism such that the transport carrier is loaded on the plasma processing stage to satisfy a positional relationship between the window section and the substrate based on the position information of the substrate to the frame.Type: GrantFiled: August 5, 2015Date of Patent: July 26, 2022Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Shogo Okita, Hiromi Asakura, Syouzou Watanabe, Noriyuki Matsubara, Mitsuru Hiroshima, Toshihiro Wada
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Publication number: 20160064188Abstract: A plasma processing apparatus that performs plasma processing to a substrate held on a transport carrier including a frame and a holding sheet that covers an opening of the frame includes: a transport mechanism that transports the transport carrier; a position measuring section that measures a position of the substrate to the frame; a plasma processing section that includes a plasma processing stage on which the transport carrier is loaded and a cover that covers the frame and a part of the holding sheet loaded on the plasma processing stage, and has a window section for exposing a part of the substrate; and a control section that controls the transport mechanism such that the transport carrier is loaded on the plasma processing stage to satisfy a positional relationship between the window section and the substrate based on the position information of the substrate to the frame.Type: ApplicationFiled: August 5, 2015Publication date: March 3, 2016Inventors: Shogo OKITA, Hiromi ASAKURA, Syouzou WATANABE, Noriyuki MATSUBARA, Mitsuru HIROSHIMA, Toshihiro WADA
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Patent number: 8906249Abstract: A plasma processing apparatus includes a beam-shaped spacer 7 which is placed at an upper opening of a chamber 3 opposed to a substrate 2 to support a dielectric plate 8. The dielectric plate 8 is supported by the beam-shaped spacer 7. In the beam-shaped spacer 7 are provided a plurality of process gas introducing ports 31, 36 which have a depression angle ?d and which are provided downward and directed toward the substrate 2, as well as a plurality of rare gas introducing ports 41 having a elevation angle ?e directed toward the dielectric plate 8. Improvement of processing rates such as etching rate as well as effective suppression of wear of the dielectric plate 8 can be achieved.Type: GrantFiled: March 19, 2008Date of Patent: December 9, 2014Assignee: Panasonic CorporationInventors: Mitsuru Hiroshima, Hiromi Asakura
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Patent number: 8673166Abstract: In a plasma processing apparatus, thrust-up pins are elevated and a thrust-up force is detected when electrostatic attraction for a substrate by a substrate holding device is ceased after completion of plasma processing, the elevation of the thrust-up pins is ceased upon detection of a detection threshold, and a stepped elevating operation in which the elevation and stoppage of the thrust-up pins are repeated a plurality of times are thereafter commenced on condition that the detected thrust-up force falls to or below the detection threshold and that release of the substrate from a placement surface has not been completed. In the stepped elevating operation, operation timing of the thrust-up device is controlled so that the completion of the release of the substrate from the placement surface is detected when the thrust-up pins are stopped after being elevated and so that the stepped elevating operation is continued on condition that the release has not been completed.Type: GrantFiled: May 28, 2009Date of Patent: March 18, 2014Assignee: Panasonic CorporationInventors: Shogo Okita, Hiromi Asakura, Syouzou Watanabe, Toshihiro Wada, Mitsuhiro Okune, Mitsuru Hiroshima
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Publication number: 20140048527Abstract: A tray for a dry etching apparatus includes substrate accommodation holes penetrating a thickness direction and a substrate support portion supporting an outer peripheral edge portion of a lower surface of a substrate. An upper portion includes a tray support surface supporting a lower surface of the tray, substrate placement portions on each of which a lower surface of the substrate to be placed, and a concave portion for accommodating the substrate support portion. A dc voltage applying mechanism applies a dc voltage to an electrostatic attraction electrode. A heat conduction gas supply mechanism supplies a heat conduction gas between the substrate and substrate placement portion. During carrying of the substrate, the outer peripheral edge of the lower surface of the substrate is supported by the substrate accommodation hole. During processing of the substrate, the substrate support portion is accommodated in the concave portion.Type: ApplicationFiled: October 24, 2013Publication date: February 20, 2014Applicant: Panasonic CorporationInventors: Shogo OKITA, Hiromi ASAKURA, Syouzou WATANABE, Ryuzou HOUCHIN, Hiroyuki SUZUKI
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Patent number: 8591754Abstract: A tray for a dry etching apparatus includes substrate accommodation holes penetrating a thickness direction and a substrate support portion supporting an outer peripheral edge portion of a lower surface of a substrate. An upper portion includes a tray support surface supporting a lower surface of the tray, substrate placement portions on each of which a lower surface of the substrate to be placed, and a concave portion for accommodating the substrate support portion. A dc voltage applying mechanism applies a dc voltage to an electrostatic attraction electrode. A heat conduction gas supply mechanism supplies a heat conduction gas between the substrate and substrate placement portion. During carrying of the substrate, the outer peripheral edge of the lower surface of the substrate is supported by the substrate accommodation hole. During processing of the substrate, the substrate support portion is accommodated in the concave portion.Type: GrantFiled: June 20, 2012Date of Patent: November 26, 2013Assignee: Panasonic CorporationInventors: Shogo Okita, Hiromi Asakura, Syouzou Watanabe, Ryuzou Houchin, Hiroyuki Suzuki
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Publication number: 20120256363Abstract: A tray for a dry etching apparatus includes substrate accommodation holes penetrating a thickness direction and a substrate support portion supporting an outer peripheral edge portion of a lower surface of a substrate. An upper portion includes a tray support surface supporting a lower surface of the tray, substrate placement portions on each of which a lower surface of the substrate to be placed, and a concave portion for accommodating the substrate support portion. A dc voltage applying mechanism applies a dc voltage to an electrostatic attraction electrode. A heat conduction gas supply mechanism supplies a heat conduction gas between the substrate and substrate placement portion. During carrying of the substrate, the outer peripheral edge of the lower surface of the substrate is supported by the substrate accommodation hole. During processing of the substrate, the substrate support portion is accommodated in the concave portion.Type: ApplicationFiled: June 20, 2012Publication date: October 11, 2012Inventors: Shogo OKITA, Hiromi Asakura, Syouzou Watanabe, Ryuzou Houchin, Hiroyuki Suzuki
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Patent number: 8231798Abstract: A tray for a dry etching apparatus includes substrate accommodation holes penetrating a thickness direction and a substrate support portion supporting an outer peripheral edge portion of a lower surface of a substrate. A dielectric plate includes a tray support surface supporting a lower surface of the tray, substrate placement portions inserted from a lower surface side of the tray into the substrate accommodation holes and having a substrate placement surface at its upper end surface. A dc voltage applying mechanism applies a dc voltage to an electrostatic attraction electrode. A heat conduction gas supply mechanism supplies a heat conduction gas between the substrate and substrate placement surface. The substrate is retained on the substrate placement surface with high degree of adhesion. Cooling efficiency of the substrate is improved and processing is uniform at the entire region of the substrate surface.Type: GrantFiled: October 14, 2009Date of Patent: July 31, 2012Assignee: Panasonic CorporationInventors: Shogo Okita, Hiromi Asakura, Syouzou Watanabe, Ryuzou Houchin, Hiroyuki Suzuki
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Publication number: 20120006489Abstract: Substrates are contained in substrate containing holes which penetrate a tray in the thickness direction. A dielectric plate in a chamber is provided with a tray supporting surface which supports the lower surface of the tray and substrate placing sections which protrude upward, and has an electrostatic chuck electrode therein. The substrate supporting section which supports the substrate contained in the substrate containing holes is provided with a plurality of protruding sections formed at intervals in the circumferential direction of the substrate containing holes. The substrates are supported in point-contact mode by means of the protruding sections.Type: ApplicationFiled: March 23, 2010Publication date: January 12, 2012Inventors: Shogo Okita, Hiromi Asakura
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Publication number: 20110111601Abstract: In a plasma processing apparatus, thrust-up pins are elevated and a thrust-up force is detected when electrostatic attraction for a substrate by a substrate holding device is ceased after completion of plasma processing, the elevation of the thrust-up pins is ceased upon detection of a detection threshold, and a stepped elevating operation in which the elevation and stoppage of the thrust-up pins are repeated a plurality of times are thereafter commenced on condition that the detected thrust-up force falls to or below the detection threshold and that release of the substrate from a placement surface has not been completed. In the stepped elevating operation, operation timing of the thrust-up device is controlled so that the completion of the release of the substrate from the placement surface is detected when the thrust-up pins are stopped after being elevated and so that the stepped elevating operation is continued on condition that the release has not been completed.Type: ApplicationFiled: May 28, 2009Publication date: May 12, 2011Inventors: Shogo Okita, Hiromi Asakura, Syouzou Watanabe, Toshihiro Wada, Mitsuhiro Okune, Mitsuru Hiroshima
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Patent number: 7736528Abstract: A tray 15 for a dry etching apparatus 1 has substrate accommodation holes 19A to 19D penetrating thickness direction and a substrate support portion 21 supporting an outer peripheral edge portion of a lower surface 2a of a substrate 2. A dielectric plate 23 has a tray support surface 28 supporting a lower surface of the tray 15, substrate placement portions 29A through 29D inserted from a lower surface side of the tray 15 into the substrate accommodation holes 19A through 19D and having a substrate placement surface 31 at its upper end surface for placing the substrate 2. A dc voltage applying mechanism 43 applies a dc voltage to an electrostatic attraction electrode 40. A heat conduction gas supply mechanism 45 supplies a heat conduction gas between the substrate 2 and substrate placement surface 31. The substrate 2 can be retained on the substrate placement surface 31 with high degree of adhesion.Type: GrantFiled: October 10, 2006Date of Patent: June 15, 2010Assignee: Panasonic CorporationInventors: Shogo Okita, Hiromi Asakura, Syouzou Watanabe, Ryuzou Houchin, Hiroyuki Suzuki
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Publication number: 20100089870Abstract: A plasma processing apparatus includes a beam-shaped spacer 7 which is placed at an upper opening of a chamber 3 opposed to a substrate 2 to support a dielectric plate 8. The dielectric plate 8 is supported by the beam-shaped spacer 7. In the beam-shaped spacer 7 are provided a plurality of process gas introducing ports 31, 36 which have a depression angle ?d and which are provided downward and directed toward the substrate 2, as well as a plurality of rare gas introducing ports 41 having a elevation angle ?e directed toward the dielectric plate 8. Improvement of processing rates such as etching rate as well as effective suppression of wear of the dielectric plate 8 can be achieved.Type: ApplicationFiled: March 19, 2008Publication date: April 15, 2010Inventors: Mitsuru Hiroshima, Hiromi Asakura
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Publication number: 20100051584Abstract: A tray 15 for a dry etching apparatus 1 has substrate accommodation holes 19A to 19D penetrating thickness direction and a substrate support portion 21 supporting an outer peripheral edge portion of a lower surface 2a of a substrate 2. A dielectric plate 23 has a tray support surface 28 supporting a lower surface of the tray 15, substrate placement portions 29A through 29D inserted from a lower surface side of the tray 15 into the substrate accommodation holes 19A through 19D and having a substrate placement surface 31 at its upper end surface for placing the substrate 2. A dc voltage applying mechanism 43 applies a dc voltage to an electrostatic attraction electrode 40. A heat conduction gas supply mechanism 45 supplies a heat conduction gas between the substrate 2 and substrate placement surface 31. The substrate 2 can be retained on the substrate placement surface 31 with high degree of adhesion.Type: ApplicationFiled: October 14, 2009Publication date: March 4, 2010Inventors: Shogo OKITA, Hiromi ASAKURA, Syouzou WATANABE, Ryuzou HOUCHIN, Hiroyuki SUZUKI
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Publication number: 20090255901Abstract: A tray 15 for a dry etching apparatus 1 has substrate accommodation holes 19A to 19D penetrating thickness direction and a substrate support portion 21 supporting an outer peripheral edge portion of a lower surface 2a of a substrate 2. A dielectric plate 23 has a tray support surface 28 supporting a lower surface of the tray 15, substrate placement portions 29A through 29D inserted from a lower surface side of the tray 15 into the substrate accommodation holes 19A through 19D and having a substrate placement surface 31 at its upper end surface for placing the substrate 2. A dc voltage applying mechanism 43 applies a dc voltage to an electrostatic attraction electrode 40. A heat conduction gas supply mechanism 45 supplies a heat conduction gas between the substrate 2 and substrate placement surface 31. The substrate 2 can be retained on the substrate placement surface 31 with high degree of adhesion.Type: ApplicationFiled: October 11, 2006Publication date: October 15, 2009Inventors: Shogo Okita, Hiromi Asakura, Syouzou Watanabe, Ryuzou Houchin, Hiroyuki Suzuki
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Publication number: 20090218045Abstract: The plasma processing apparatus has a beam-shaped spacer 7 placed at the upper opening of the chamber 3 opposed to the substrate 2. The beam-shaped spacer 7 has an annular outer peripheral portion 7a whose lower surface 7d is supported by the chamber 3, a central portion 7b located at the center of a region surrounded by the outer peripheral portion 7a in plane view, and a plurality of beam portions 7c extending radially from the central portion 7b to the outer peripheral portion 7a. An entire of a dielectric plate 8 is uniformly supported by the beam-shaped spacer 7. The dielectric plate 8 can be reduces in thickness while securing a mechanical strength for supporting the atmospheric pressure when the chamber 3 is internally reduced in pressure.Type: ApplicationFiled: November 1, 2006Publication date: September 3, 2009Inventors: Mitsuru Hiroshima, Hiromi Asakura, Syouzou Watanabe, Mitsuhiro Okune, Hiroyuki Suzuki, Ryuzou Houchin
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Patent number: 4428124Abstract: A hair cutting angle indicator for use with scissors or the like as an aid to cutting the hair at a desired angle with respect to the vertical. It includes an angle gauge mounted on an attachment removably mounted on the scissors. In one embodiment, the indicator holds the scissors at an adjustable desired distance from the head whose hair is being cut. In another embodiment, angular indicia are provided about a bar mounted to the handle of the scissors so as to indicate the angle of the cutting direction about the pivot axis of the scissors.Type: GrantFiled: December 22, 1981Date of Patent: January 31, 1984Inventor: Hiromi Asakura
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Patent number: D329303Type: GrantFiled: February 14, 1991Date of Patent: September 8, 1992Inventor: Hiromi Asakura